Gas uniform flow structure of large chamber PECVD

By setting multiple air inlet groups and functional baffles in the gas distribution box of the PECVD equipment, the gas flow direction is changed, which solves the problems of uneven coating in large chambers and incomplete RPS cleaning, achieving uniformity of silicon wafer coating and cleaning, and reducing production costs.

CN224494327UActive Publication Date: 2026-07-14GOLD STONE (FUJIAN) ENERGY CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
GOLD STONE (FUJIAN) ENERGY CO LTD
Filing Date
2025-07-25
Publication Date
2026-07-14

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    Figure CN224494327U_ABST
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Abstract

The utility model relates to PECVD equipment field discloses a gas uniform flow structure of big chamber PECVD, including cavity, cavity top is provided with middle air inlet hole group, four around air inlet hole group and RPS air inlet hole group. Four around air inlet hole group sets up in four corner regions of air distribution box, and four around air inlet hole group below is provided with laminar flow board. The laminar flow board is circular ring sector, and its center is the center point of air distribution box upper surface. The edge of laminar flow board close to air distribution box center is higher than the edge close to air distribution box four corners, and is inclined setting. Middle air inlet hole group sets up in the center of air distribution box, and the below of middle air inlet hole group is provided with the uniform flow board, is provided with a plurality of uniform flow holes on the uniform flow board. RPS air inlet hole group is located in the both sides of middle air inlet hole group, and RPS air inlet hole group below is provided with air baffle. The utility model increases the corresponding function baffle below air inlet hole group to change the gas flow direction, shorten the uniform flow time and effect, and the film coating uniformity of big chamber single board silicon wafer, RPS cleaning uniformity is greatly improved.
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