A continuous stack PECVD apparatus

Abstract

The utility model discloses a continuous laminated PECVD equipment, including the piece of entering cavity, preheating area, constant temperature area, process cavity, buffer cavity and the piece of going out cavity that connect in proper order, the piece of entering cavity, process cavity, buffer cavity and the piece of going out cavity both sides are equipped with the door board of open -close, and there is no physical separation between preheating area and constant temperature area, and constitutes the continuous temperature control area, process cavity is equipped with RF power supply and process gas inlet device, buffer cavity configures gradient cooling mechanism, and the communicating translation mechanism is arranged in each chamber, and the carrier is distributed on the translation mechanism, and the graphite boat is placed on the carrier, and the graphite boat is driven by the translation mechanism and is transmitted between each chamber. The utility model discloses can continuously and unceasingly feed and discharge, and the silicon chip arrangement is compact, and the number is much, and adopts the design of multiple rows graphite boat, and the production is increased simultaneously also increases the transportation stability, and the production efficiency is greatly improved, and the land occupation is little, and the number of up and down boat is little, and the automation single station is more safe and reliable.

Description

Technical Field

[0001] This utility model relates to the field of vacuum coating equipment, and in particular to a continuous stacked PECVD equipment. Background Technology

[0002] Existing photovoltaic PECVD equipment is broadly divided into tubular PECVD equipment and slab PECVD equipment. Tubular PECVD equipment typically has 5-6 tubes per unit. The process flow for each tube generally includes feeding, tube entry, vacuuming, heating, coating, inert gas introduction, vacuum breaking, tube exit, and finally, unloading. The main coating process only takes a few minutes, representing a very small portion of the overall process time. However, the remaining processes need to be repeated continuously following the coating process, resulting in a long production cycle and low efficiency. In slab PECVD equipment, the silicon wafers are laid flat, wasting space and contributing to low efficiency. Furthermore, its preheating cycle is synchronized with the process cycle, making it difficult to achieve high-temperature preheating in a short time, thus exhibiting poor adaptability to many high-temperature processes.

[0003] Therefore, a PECVD equipment is designed that combines the advantages of plate-type PECVD equipment, which repeatedly evacuates and breaks the vacuum at the beginning and end of the process chamber to achieve uninterrupted material feeding and discharging, with the advantages of tubular PECVD equipment, which tightly arranges silicon wafers to increase the number of wafers produced per batch, in order to improve production efficiency. Utility Model Content

[0004] To address the aforementioned problems, this utility model provides a continuous stacked PECVD equipment that combines the advantages of tubular PECVD equipment and plate PECVD equipment, greatly improving production efficiency.

[0005] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is: a continuous stacked PECVD equipment, including a wafer inlet chamber, a preheating zone, a constant temperature zone, a process chamber, a buffer chamber, and a wafer exit chamber connected in sequence. The wafer inlet chamber, the process chamber, the buffer chamber, and the wafer exit chamber are all provided with openable and closable door panels on both sides. There is no physical separation between the preheating zone and the constant temperature zone, forming a continuous temperature control area. The process chamber is equipped with an RF power supply and a process gas inlet device. The buffer chamber is equipped with a gradient cooling mechanism. Each chamber is provided with a connected translation mechanism. A carrier is distributed on the translation mechanism, and a graphite boat is placed on the carrier. The graphite boat is driven by the translation mechanism to be transported between the chambers.

[0006] Furthermore, the wafer loading chamber, process chamber, and buffer chamber are each equipped with an independent vacuum control module, and the vacuum level is matched and transferred between the chambers through the coordinated opening and closing of the door panels.

[0007] Furthermore, the graphite boat is a silicon wafer carrier unit arranged in a single row or multiple rows in parallel, used to simultaneously carry multiple sets of silicon wafers.

[0008] Furthermore, the carrier on the translation mechanism is adapted to the wide base structure of the multi-row graphite boat, and its conveying speed is ≥1.5m / s without causing overturning.

[0009] As can be seen from the above description of the structure of this utility model, compared with the prior art, this utility model has the following advantages:

[0010] This invention allows for continuous loading and unloading of silicon wafers, with a compact arrangement and large quantity. The multi-row graphite boat design increases output and transportation stability, significantly improving production efficiency. It enables horizontal placement of single wafers, avoiding vertical wafer placement and winding plating, facilitating capacity expansion. It can be combined and arranged according to process requirements, requiring less space, fewer loading and unloading boats, and automated single unit operation, making it safer and more reliable. Attached Figure Description

[0011] The accompanying drawings, which form part of this application, are used to provide a further understanding of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an undue limitation of the present invention. In the drawings:

[0012] Figure 1 This is a schematic diagram of the structure of Embodiment 1 of the present utility model;

[0013] Figure 2 This is a structural schematic diagram of Embodiment 2 of the present invention. Detailed Implementation

[0014] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0015] Example 1

[0016] like Figure 1 As shown, a continuous stacked PECVD equipment includes a wafer loading chamber 2, a preheating zone 3, a constant temperature zone 4, a process chamber 5, a buffer chamber 6, and a wafer exit chamber 7 connected in sequence. The wafer loading chamber 2, process chamber 5, buffer chamber 6, and wafer exit chamber 7 are equipped with openable and closable doors 1 on both sides. There is no physical separation between the preheating zone 3 and the constant temperature zone 4, forming a continuous temperature control area. The process chamber 5 is equipped with an RF power supply and a process gas introduction device. The buffer chamber 6 is equipped with a gradient cooling mechanism. Each chamber is equipped with a connected translation mechanism 8. Carriers 12 are distributed on the translation mechanism 8, and a single row of graphite boats 11 are placed on the carriers 12. The graphite boats 11 are driven by the translation mechanism 8 to be transported between the chambers.

[0017] The wafer loading chamber 2, process chamber 5, and buffer chamber 6 are each equipped with an independent vacuum control module. Vacuum degree matching and transmission between each chamber are achieved through the coordinated opening and closing of the door panel 1.

[0018] The carrier 12 on the translation mechanism 8 is adapted to the wide base structure of the multi-row graphite boat 11, and the conveying speed is 2m / s.

[0019] During operation, the wafer feeding chamber first feeds the wafer into the atmosphere, then closes the valves on both sides to create a vacuum. Once the vacuum level matches that of the preheating chamber, the valve connected to the preheating chamber is opened, and the silicon wafer is sent into the preheating chamber for heating. The length of the preheating chamber can be adjusted according to the production capacity to store the corresponding number of silicon wafers. The preheating chamber is divided into a preheating zone and a constant temperature zone to save energy. The silicon wafer that has reached the process temperature enters the process chamber, and the valves on both sides of the process chamber are closed for coating. The length and space of the coating process chamber can be designed according to the process cycle and production capacity requirements, and single or multiple groups of silicon wafers can be coated simultaneously. After coating, the silicon wafer passes through the buffer chamber to gradually cool down, and finally reaches the wafer exit chamber. The silicon wafer is removed after the vacuum in the wafer exit chamber is broken.

[0020] Example 2

[0021] It is basically the same as Embodiment 1 above, except that, as Figure 2 As shown, n rows of graphite boats 11 are placed on the carrier 12. The n rows of graphite boats 11 are driven by the translation mechanism 8 to be transported between the chambers, which increases the output and the multi-row design makes the transport process more stable.

[0022] This invention enables continuous single- or multi-group deposition of silicon wafers, allowing for continuous loading and unloading, significantly shortening the production cycle. It combines the advantages of tubular and slab-type PECVD equipment, greatly improving production efficiency. The silicon wafers are arranged compactly and in large quantities, employing a multi-row graphite boat design, increasing both output and transport stability, thus greatly improving production efficiency. It allows for horizontal placement of single wafers, avoiding vertical wafer placement and winding deposition, facilitating capacity expansion. The arrangement of different sections can be customized according to process requirements, requiring less space, fewer loading and unloading boats, and is automated on a single unit, making it safer and more reliable.

[0023] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A continuous stacked PECVD equipment, characterized in that: The device includes a sequentially connected inlet chamber (2), a preheating zone (3), a constant temperature zone (4), a process chamber (5), a buffer chamber (6), and an outlet chamber (7). The inlet chamber (2), process chamber (5), buffer chamber (6), and outlet chamber (7) are equipped with openable and closable door panels (1) on both sides. There is no physical separation between the preheating zone (3) and the constant temperature zone (4), forming a continuous temperature control area. The process chamber (5) is equipped with an RF power supply and a process gas inlet device. The buffer chamber (6) is equipped with a gradient cooling mechanism. Each chamber is equipped with a connected translation mechanism (8). The translation mechanism (8) is equipped with a carrier (12), and a graphite boat (11) is placed on the carrier (12). The graphite boat (11) is driven by the translation mechanism (8) to be transported between the chambers.

2. The continuous stacked PECVD equipment according to claim 1, characterized in that: The wafer loading chamber (2), process chamber (5) and buffer chamber (6) are each equipped with an independent vacuum control module. Vacuum degree matching and transmission between the chambers are achieved through the coordinated opening and closing of the door panel (1).

3. The continuous stacked PECVD equipment according to claim 1, characterized in that: The graphite boat (11) is a silicon wafer carrier unit arranged in a single row or multiple rows in parallel, used to simultaneously carry multiple sets of silicon wafers.

4. A continuous stacked PECVD equipment according to claim 1 or 3, characterized in that: The carrier (12) on the translation mechanism (8) is adapted to the wide base structure of the multi-row graphite boat (11), and its conveying speed is ≥1.5m / s without causing overturning.

Images