An inspection system and defect detection apparatus
By setting up an adjustment mirror group and a hollow retroreflector in the wafer inspection system, the common use of oblique and vertical incident beams can be achieved, solving the problems of large equipment size, high cost and complicated debugging, and improving inspection accuracy and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- MATRIXTIME ROBOTICS (SHANGHAI) CO LTD
- Filing Date
- 2025-06-30
- Publication Date
- 2026-07-14
AI Technical Summary
Among existing wafer surface defect detection equipment, vertical and oblique incident beam systems are large in size, expensive, have low light energy utilization, and are complex to debug.
By setting an adjustment mirror group on the propagation path of the incident beam, the oblique incident beam and the vertical incident beam can be shared, reducing system redundancy. A hollow retroreflector is used to compensate for the optical path difference, and functional components are shared to simplify the optical path structure.
It reduces equipment size and cost, improves light energy utilization, simplifies the debugging process, and enhances detection accuracy and efficiency.
Smart Images
Figure CN224500448U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor front-end inspection technology, specifically a dark field inspection system and a defect detection device. Background Technology
[0002] As the substrate for chips, wafers are susceptible to defects on their surface, which can lead to chip failure, reduced yield, and increased manufacturing costs. Therefore, a common practice is to perform wafer surface defect detection before or during chip fabrication. Wafer surface defect detection refers to detecting the presence and location of defects such as grooves, particles, and scratches on the wafer surface.
[0003] Currently, dark-field scanning systems are commonly used for wafer surface defect detection. These systems typically use a beam splitter at the laser exit to divide the beam into two incident modes: perpendicular and oblique. This allows them to acquire scattering information from the defects, detecting and reflecting the scattering information from different locations using the same method. Generally, a perpendicular-incident system includes a set of beam expanders, shaping lenses, and focusing objectives, distributed at different locations within the system. However, these beam expanders, shaping lenses, and focusing objectives usually use the same type of lens or lens group, increasing the equipment size and basic cost. Furthermore, these two subsystems require separate assembly and debugging, leading to reduced light energy utilization and a cumbersome and complex debugging process. Summary of the Invention
[0004] To address the technological gaps in the existing technology, this application provides a detection system and defect detection equipment that can improve the accuracy of detection results by periodically adjusting the type of incident beam in real time.
[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows:
[0006] In a first aspect, a detection system is provided, the system comprising: a light source for generating an incident light beam; a first mirror group disposed on the propagation path of the incident light beam for changing the propagation direction of the incident light beam to form an oblique incident light beam relative to the object to be detected, and forming a first incident light spot on the surface of the object to be detected; and an adjustment mirror group selectively disposed on the propagation path of the incident light beam for changing the propagation direction of the incident light beam to propagate the incident light beam to a second mirror group, the second mirror group being used to change the propagation direction of the incident light beam to form a perpendicular incident light beam relative to the object to be detected, and forming a second incident light spot on the surface of the object to be detected; the first incident light spot and the second incident light spot having the same size and the same incident position.
[0007] In another possible implementation, the first mirror group includes at least one reflector for adjusting the propagation direction of the incident light beam and the incident angle of the incident light beam relative to the object to be detected.
[0008] In another possible implementation, the first mirror assembly further includes a hollow retroreflector with an internal cavity structure, wherein a reflective film is coated inside the cavity of the hollow retroreflector; the reflector is disposed on the retroreflection optical path of the hollow retroreflector, and the incident beam is projected onto the reflector after being reflected multiple times by the hollow retroreflector.
[0009] In another possible implementation, the adjusting mirror group includes at least one reflector for adjusting the propagation direction of the incident light beam so that the incident light beam is received by the second mirror group.
[0010] In another possible implementation, the second mirror group includes at least one mirror for receiving an incident light beam reflected via the adjustment mirror group, and at least one mirror for projecting the incident light beam onto the surface of the object to be inspected.
[0011] In another possible implementation, the adjusting mirror assembly includes at least one reflector for receiving the incident light beam, and at least one reflector for projecting the incident light beam onto the second mirror assembly.
[0012] In another possible implementation, the second mirror group includes at least one reflecting mirror for receiving an incident light beam reflected via the adjusting mirror group, the reflecting mirror also for projecting the incident light beam onto the surface of the object to be inspected.
[0013] Another possible implementation includes a polarizer disposed on the propagation path of the incident beam for changing the polarization state of the incident beam.
[0014] Another possible implementation includes a beam expander and a shaping mirror disposed on the propagation path of the incident beam for adjusting the shape of the incident beam.
[0015] Another possible implementation includes a focusing objective lens positioned along the propagation path of the incident beam.
[0016] Secondly, a defect detection device is provided, comprising: a stage for placing an object to be detected and moving it along an equidistant spiral; a detection system as described in any of the preceding claims, for sequentially generating a first incident light spot and a second incident light spot having the same size and the same incident position on the surface of the object to be detected based on a scanning cycle, and generating a corresponding first scattered light beam and a second scattered light beam via the object to be detected; a detector assembly for sequentially receiving the first scattered light beam and the second scattered light beam, and generating a corresponding scattered light signal; and a processing center for processing the scattered light signal to obtain a detection result.
[0017] The embodiments of the present invention bring the following beneficial effects:
[0018] In the technical solution provided in this application embodiment, by controlling the loading or unloading of the adjustment mirror group on the propagation path of the incident beam, oblique incident beams and vertical incident beams with different incident angles are formed, thereby realizing the adjustment of different incident modes of the incident beam. The sharing of a main beam by the oblique incident beam and the vertical incident beam reduces the redundancy of the system.
[0019] Other features and advantages of this disclosure will be set forth in the following description, or some features and advantages may be inferred from the description or determined without doubt, or may be learned by practicing the techniques described above.
[0020] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] The methods, systems, and / or procedures shown in the accompanying drawings will be further described with reference to exemplary embodiments. These exemplary embodiments will be described in detail with reference to the drawings. These exemplary embodiments are non-limiting exemplary embodiments, wherein example figures represent similar mechanisms in the various views of the drawings.
[0023] Figure 1 This is a schematic diagram of the detection system structure;
[0024] Figure 2 This is a schematic diagram of the optimized structure of the detection system;
[0025] Figure 3 This is a schematic diagram of the first structure of the hollow retroreflector;
[0026] Figure 4 This is a schematic diagram of the second structure of the hollow retroreflector;
[0027] Figure 5 This is a schematic diagram of the optimized structure of the detection system. Detailed Implementation
[0028] To better understand the above technical solutions, the technical solutions of this application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of this application and the specific features in the embodiments are detailed descriptions of the technical solutions of this application, rather than limitations on the technical solutions of this application. In the absence of conflict, the embodiments of this application and the technical features in the embodiments can be combined with each other.
[0029] In the detailed description below, numerous specific details are illustrated with examples to provide a comprehensive understanding of the relevant guidance. However, it will be apparent to those skilled in the art that this application can be practiced without these details. In other instances, well-known methods, procedures, systems, components, and / or circuits have been described at a relatively high level without detail to avoid unnecessarily obscuring aspects of this application.
[0030] This application uses flowcharts to illustrate the execution process performed by a system according to embodiments of this application. It should be clearly understood that the execution processes in the flowcharts may not be executed sequentially. Instead, these execution processes may be executed in reverse order or simultaneously. Additionally, at least one other execution process may be added to the flowchart. One or more execution processes may be deleted from the flowchart.
[0031] This application provides a dark field detection system for dark field detection. It detects the object by projecting a laser of a specific wavelength onto the surface of the object to be tested, forming a light spot. The object to be tested is a wafer. In this embodiment, "wafer" generally refers to a substrate formed of semiconductor or non-semiconductor materials. Examples include (but are not limited to) single-crystal silicon, gallium arsenide, gallium nitride, and indium phosphide. Such substrates are typically found and / or processed in semiconductor manufacturing facilities. In some cases, the wafer may contain only the substrate (i.e., a bare die). Alternatively, the wafer may contain one or more different material layers formed on the substrate. The one or more layers formed on the wafer may be "patterned" or "unpatterned." For example, the wafer may contain multiple dies with repeatable pattern features.
[0032] Dark-field laser scattering (DLS) is an effective detection method based on the principle of light scattering. Specifically, the device uses a high-precision laser beam to illuminate the wafer surface. When the laser encounters defects on the surface, it generates scattered light. These scattered light signals are collected and analyzed by a highly sensitive detector, thus accurately reflecting the distribution of nanoscale defects on the wafer surface.
[0033] The generated laser beams include both obliquely incident and perpendicularly incident beams. These two types of laser beams can collect scattered light signals from different defect types at the same wafer location, thus enabling the detection to balance detection efficiency and defect coverage.
[0034] In existing technologies, to obtain the aforementioned two-beam system, a beam splitter is typically used at the laser exit position to divide the incident beam into a vertically incident beam and an obliquely incident beam. Furthermore, other functional devices, such as beam expanders, shaping lenses, and focusing lenses, are configured in both incident beams. However, in practical use, the applicant has found that because these functional devices typically use the same type of lens or lens group, configuring them separately in the two incident beams increases the equipment size and basic cost. Moreover, the two incident beams require separate assembly and debugging, which also leads to reduced light energy utilization and a cumbersome and complex debugging process.
[0035] Based on the above technical background and in order to solve the above technical problems, this embodiment provides a detection system that integrates oblique incident beams and vertical incident beams through optical path structure settings, reducing the cost increase caused by configuring multiple functional devices individually. Furthermore, since the oblique incident beams and vertical incident beams share the same set of functional devices, the difficulty of system assembly and debugging is reduced, thereby solving technical problems such as decreased light energy utilization and complex debugging process.
[0036] For details regarding its specific structure, please refer to [link / reference]. Figure 1 A detection system 100, applied to wafer inspection, includes a light source 110, a first mirror group 120, an adjustment mirror group 130, and a second mirror group 140. The light source is configured as a laser to provide an incident light beam to the wafer 20 to be inspected.
[0037] In one possible implementation, the light source in this embodiment is positioned parallel to the wafer under test, and the propagation path of the incident beam it generates is also parallel to the wafer under test. An adjustment mirror group is movably disposed along the propagation path of the incident beam, and this mirror group is used to control the propagation path of the current incident beam. In this embodiment, the propagation path of the incident beam includes an oblique incidence propagation path and a perpendicular incidence propagation path. The control logic is achieved by loading or unloading the adjustment mirror group along the propagation path of the incident beam, causing the incident beam to propagate to a second mirror group or a first mirror group based on changes in the adjustment mirror group.
[0038] Depending on the needs of the detection objective, the incident beam's incident mode can be changed by configuring an adjustment mirror group in the propagation path of the incident beam.
[0039] Specifically, in this embodiment, the first and second mirror groups are used to change the propagation direction of the incident light beam, so that the incident light beam reaches the surface of the wafer under test in an oblique and perpendicular manner, respectively. The first mirror group is positioned on the propagation path of the incident light beam. The adjusting mirror group is positioned closer to the light source than the first mirror group. This is so that when the adjusting mirror group is placed on the propagation path of the incident light beam, it changes the propagation direction of the incident light beam that would originally be received by the first mirror group, so that it is received by the second mirror group, thereby transforming the obliquely incident light beam originally generated by the first mirror group into a perpendicularly incident light beam. When the adjusting mirror group is removed from the propagation path of the incident light beam, the incident light beam travels along the original propagation path to the first mirror group, and through the first mirror group, generates an obliquely incident light beam to the wafer under test. Finally, the incident light beam, via the first and second mirror groups, sequentially forms corresponding first and second incident light spots on the surface of the wafer under test at different times.
[0040] This can be understood as follows: when the adjustment mirror group in this embodiment is loaded into the incident beam propagation path, it can change the propagation direction of the incident beam and transmit it to the second mirror group; when the adjustment mirror group is removed from the incident beam propagation path, the propagation direction of the incident beam is not changed and it is transmitted to the first mirror group.
[0041] The adjusting mirror assembly can be configured as a reflecting mirror, and the directions of movement corresponding to its loading and unloading can be found in [reference needed]. Figure 1 As shown by the arrow in the image.
[0042] Please continue reading. Figure 1 In this embodiment, the first mirror group includes a reflector. The incident light beam can generate changes in propagation direction and angle through the reflector, thereby generating an oblique incident light beam to the surface of the wafer to be tested.
[0043] The second mirror group 140 in this embodiment includes two mirrors, namely a first mirror 141 and a second mirror 142. The first mirror is used to receive the incident light beam transmitted by the adjustment mirror group and transmit the incident light beam to the second mirror. The second mirror is used to change the propagation direction and incident angle of the incident light beam so that the incident light beam is incident perpendicularly to the wafer to be tested.
[0044] It is worth noting that although only the optical components of the first, second, and adjusting mirror groups described above have been described, those skilled in the art should understand that these mirror groups include not only the corresponding optical components but also the associated mechanical structures. For example, the adjusting mirror group may have a barrel structure, including a corresponding mirror and a motor connected to the barrel. The motor drives the barrel to move, thereby achieving loading and unloading.
[0045] The detection system provided in the above embodiments controls the loading or unloading of the adjustment mirror group on the propagation path of the incident beam and uses the first mirror group and the second mirror group to adjust the different incident modes of the incident beam. The oblique incident beam and the vertical incident beam share the same incident beam, which reduces the redundancy of the system.
[0046] However, it is worth noting that although the above detection system can solve the problems of overall system complexity, control precision and debugging complexity in the existing technology, the optical path of the oblique incident light path in this structure is relatively long, and it will cause scattering signal when collecting scattered light because the first mirror group is not the optimal structure.
[0047] In another possible implementation, and to meet the requirement that the focal lengths of the focusing objectives for oblique and perpendicular incident beams be consistent—that is, the optical path lengths of the oblique and perpendicular incident beams formed by the incident beams passing through the focusing objective and adjusting lens group are kept consistent—a hollow retroreflector is provided along the propagation path of the oblique incident beam to compensate for the distance missing between the focusing objective and the wafer surface, while reducing the system complexity caused by the long beam propagation process, based on the above-mentioned detection system.
[0048] For details, please refer to Figure 2 As shown, the first mirror group 130 includes a hollow retroreflector 131 disposed on the propagation path of the incident beam and a reflector 132 disposed on the retroreflection path corresponding to the hollow retroreflector.
[0049] Among them, see Figure 3 and Figure 4This is a schematic diagram of the hollow retroreflector provided in this embodiment. The hollow retroreflector is an optical device with an internal cavity structure, having three orthogonal surfaces, each coated with a laser-reflecting film. An incident beam enters the cavity of the hollow retroreflector, undergoes multiple reflections through the laser-reflecting film, and generates a retroreflected beam. The retroreflected beam has the same angle as the incident beam and is projected onto the reflector in the first mirror group, forming an obliquely incident beam. Furthermore, based on the characteristic that the incident beam of the hollow retroreflector is reflected from the surface it points to during reflection, the incident beam entering the cavity of the hollow retroreflector is reflected from the other two surfaces and output from the retroreflection, making the incident beam parallel to and opposite in direction to the retroreflected beam.
[0050] It is worth noting that, in this embodiment, the incident light beam entering the hollow retroreflector cavity can be received by either a vertex or any point on any of the three faces. When the incident light beam is received by a vertex, the incident and retroreflected beams are collinear; however, when the incident light beam is received by any point on any of the three faces, the incident and retroreflected beams are not collinear. In this embodiment, it is preferable to set the vertex position of the hollow retroreflector to be offset from the incident light beam.
[0051] In summary, this implementation method reduces system complexity compared to the previous implementation method by providing a hollow retroreflector on the incident beam.
[0052] See Figure 5 In one possible implementation, to control the shape and size of the first and second incident light spots, a functional device for shaping and changing the state of the incident light beam is disposed along the propagation path of the incident light beam. Furthermore, the functional device is disposed between the light source and the adjustment assembly, thereby allowing the obliquely incident beam and the vertically incident beam to be shared.
[0053] Specifically, the functional components are arranged sequentially according to the light propagation path, including a polarizer 151, a beam expander 152, a beam shaper 153, and a focusing objective lens 154. Among them, the polarizer is used to change the polarization state of the incident beam, and the beam expander and beam shaper are used to change the shape and size of the incident beam.
[0054] Furthermore, to further reduce system complexity, reflectors are placed between multiple functional components to mitigate the space utilization issue caused by the incident beam only propagating laterally. In this embodiment, corresponding reflectors are placed between the beam expander and the shaping lens, and between the shaping lens and the focusing objective lens, to increase the vertical propagation of the incident beam, thereby improving the overall system's space utilization.
[0055] In this embodiment, for the sake of clarity and simplicity of the control logic, only two height positions are set for the adjustment lens group: a first height position for generating an oblique incident beam and a second height position for generating a vertical incident beam.
[0056] Specifically, when the incident beam type corresponding to the current scanning cycle is an oblique incident beam, the position of the adjusting mirror group is determined based on the position obtained by the sensor to determine whether the current position is at the first height position. If not, the adjusting mirror group is controlled to move upward to the first height position; if so, no height adjustment is performed. Conversely, when the incident beam type corresponding to the current scanning cycle is a vertical incident beam, the position of the adjusting mirror group is determined based on the position obtained by the sensor to determine whether the current position is at the second height position. If not, the adjusting mirror group is controlled to move downward to the second height; if so, no height adjustment is performed.
[0057] In other embodiments of this example, a defect detection device is provided. This detection device includes a stage, a detector assembly, a processing center, and any one of the illumination systems described in the two embodiments above. The stage carries the wafer to be inspected and moves along an equidistant spiral path, causing the wafer to follow the movement. The detector assembly receives the scattered light beam generated by the incident light beam from the detection system and the wafer, generating a scattered light signal. The processing center processes the scattered light signal to obtain the detection result.
[0058] In this embodiment, the incident beam includes a first incident beam and a second incident beam, which respectively form a first incident spot and a second incident spot on the surface of the wafer to be tested, and the first incident spot and the second incident spot have the same size. The first incident beam is an oblique incident beam, and the second incident beam is a perpendicular incident beam.
[0059] Specifically, the current scanning cycle and the corresponding incident beam type are determined. Based on the incident beam type, the height of the adjustable mirror assembly is controlled to be at the target height, thus configuring the incident beam of the corresponding type. This incident beam is then projected onto the wafer under test, which moves along an equidistant spiral. The incident beam remains constant, while the wafer under test moves along a specific path based on the stage. The incident beam generates a scattered beam through the wafer, and the detector assembly obtains the scattered signal corresponding to the scattered beam. The scattered signals at all points on the wafer under test are obtained based on the complete motion of the wafer.
[0060] After scanning all sites, a new scanning cycle is initiated based on the detection requirements. The height of the current adjustment mirror group is adjusted according to the new scanning cycle and the corresponding incident beam type to configure the incident beam type, changing it from the previous scanning cycle. If the incident beam type for the previous scanning cycle was an oblique incident beam, the incident beam type for the new scanning cycle is a vertical incident beam. Accordingly, the adjustment mirror group is lowered to adjust the turntable that previously carried out the incident beam propagation path to carry in the incident beam propagation path, thus forming a vertical incident beam. The vertical incident beam is projected onto the wafer under test, and scanning of all sites on the wafer is achieved by moving the equidistant spiral along the wafer. The detector then collects the scattered signals from all sites on the wafer.
[0061] In this embodiment, the detector assembly is positioned along the path of the scattered beam. This scattered beam path includes two paths: one corresponding to a large-angle detection channel and the other to a small-angle detection channel. The detector assembly also includes two sets of detectors positioned along these two paths, one set for collecting small-angle scattered light and the other set for collecting large-angle scattered light.
[0062] The beam splitting of the scattered beams corresponding to the two paths is achieved using an elliptical mirror and a beam splitter. An elliptical mirror is positioned along the main path of the scattered beam, and a beam splitter is placed within the elliptical mirror. The receiving range of the beam splitter corresponds to the divergence range of the small-angle scattered beam. The beam splitter reflects the small-angle scattered light within its field of view to a corresponding set of detectors. The scattered beam that is not reflected by the beam splitter, which is the large-angle scattered light, is received by another set of detectors located at the exit port of the elliptical mirror.
[0063] Both sets of detectors are connected to the processing center, transmitting the collected scattered light signals to the processing center.
[0064] The detection system and defect detection equipment provided in this application embodiment achieve switching between oblique and vertical incident beams by setting an adjustable lens group in the detection system. This reduces the size of the equipment, lowers the equipment investment cost, and improves debugging efficiency. Furthermore, the same set of functional components can be used for both oblique and vertical incident beams, thereby reducing lens processing and debugging errors and improving detection accuracy. By switching the beam settings, the disadvantage of light energy loss caused by the use of beam splitters in the prior art can be reduced, the light density at the wafer surface can be increased, and the detection sensitivity can be further improved.
[0065] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A detection system, characterized in that, The system includes: A light source, used to generate an incident light beam; The first mirror group is disposed on the propagation path of the incident beam and is used to change the propagation direction of the incident beam so that the incident beam forms an oblique incident beam relative to the object to be detected and forms a first incident light spot on the surface of the object to be detected. The adjustable mirror group can be selectively configured on the propagation path of the incident beam to change the propagation direction of the incident beam so that the incident beam propagates to the second mirror group; The second mirror group is used to change the propagation direction of the incident beam so that the incident beam forms a perpendicular incident beam to the object to be detected, and forms a second incident spot on the surface of the object to be detected; the first incident spot and the second incident spot have the same size and the same incident position.
2. The detection system according to claim 1, characterized in that, The first mirror group includes at least one reflector for adjusting the propagation direction of the incident light beam and the incident angle of the incident light beam relative to the object to be detected.
3. The detection system according to claim 2, characterized in that, The first mirror assembly also includes a hollow retroreflector with an internal cavity structure, and a reflective film is coated inside the cavity of the hollow retroreflector; the reflector is disposed on the retroreflection optical path of the hollow retroreflector, and the incident beam is projected onto the reflector after being reflected multiple times by the hollow retroreflector.
4. The detection system according to claim 1, characterized in that, The adjustment mirror group includes at least one reflector for adjusting the propagation direction of the incident light beam so that the incident light beam is received by the second mirror group.
5. The detection system according to claim 4, characterized in that, The second mirror group includes at least one reflector for receiving an incident light beam reflected by the adjustment mirror group, and at least one reflector for projecting the incident light beam onto the surface of the object to be inspected.
6. The detection system according to claim 1, characterized in that, The adjustment mirror assembly includes at least one reflector for receiving the incident light beam, and at least one reflector for projecting the incident light beam onto the second mirror assembly.
7. The detection system according to claim 6, characterized in that, The second mirror group includes at least one reflecting mirror for receiving an incident light beam reflected by the adjusting mirror group, the reflecting mirror also being used to project the incident light beam onto the surface of the object to be inspected.
8. The detection system according to claim 1, characterized in that, It also includes a polarizer disposed on the propagation path of the incident beam for changing the polarization state of the incident beam.
9. The detection system according to claim 1, characterized in that, It also includes a beam expander and a shaping mirror disposed on the propagation path of the incident beam for adjusting the shape of the incident beam.
10. The detection system according to claim 1, characterized in that, It also includes a focusing objective lens disposed on the propagation path of the incident beam.
11. A defect detection device, characterized in that, include: The stage is used to place the object to be inspected and moves along an equidistant spiral. The detection system according to any one of claims 1-10 is used to sequentially generate a first incident light spot and a second incident light spot with the same size and the same incident position on the surface of the object to be detected based on a scanning cycle, and generate a corresponding first scattered light beam and a second scattered light beam through the object to be detected. The detector assembly is used to sequentially receive the first scattered beam and the second scattered beam, and generate corresponding scattered light signals; The processing center is used to process the scattered light signals to obtain the detection results.