Electrochromic device
By using a composite structure of a conductive layer, a seed reaction layer, and a seed protection layer, the corrosion problem of electroluminescent devices has been solved, achieving rapid optical switching and high stability, expanding application scenarios, and improving optical contrast and response speed.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FENSHIPU CO LTD
- Filing Date
- 2025-10-30
- Publication Date
- 2026-07-14
Smart Images
Figure CN224501114U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electro-tunable optical devices, and in particular to an electro-reflective device. Background Technology
[0002] Electroluminescent devices, as a novel type of device capable of actively controlling their optical reflection state through external electrical signals, have demonstrated enormous application potential and market prospects in cutting-edge fields such as smart energy-saving buildings, next-generation automotive display systems, and immersive smart glasses. Their core value lies in their ability to dynamically manage light, providing a key technological path to achieving high energy efficiency and immersive interactive experiences.
[0003] However, the electrode structures commonly used in existing technologies are mostly limited to a single transparent conductive oxide layer (such as ITO) or a simple metal plating. These structures face severe challenges during long-term operation: First, the electrode metal material is highly susceptible to chemical corrosion and electrochemical oxidation at the interface with the electrolyte, leading to a rapid decline in its optical and electrical properties and severely limiting the device's lifespan. Second, the simple electrode interface cannot provide sufficient and efficient electrochemical reaction sites, resulting in slow switching of the device's optical state and a response speed that fails to meet practical application requirements. Furthermore, traditional electrode designs have limited ability to control the formation and dissipation of reflective layers, resulting in insufficient switching range between bright and dark states, mediocre overall optical contrast, and a significantly diminished visual experience.
[0004] To address these issues, existing technologies have attempted to improve performance by doping with metal ions or adding protective layers, but no systematic interlayer structure design scheme has been developed, and it is difficult to balance conductivity, stability, and reflectivity control performance. Utility Model Content
[0005] In order to overcome the above-mentioned technical defects, the purpose of this utility model is to provide an electroluminescent device.
[0006] This utility model discloses an electroluminescent device, which includes a first substrate, a working electrode, an electrolyte layer, a counter electrode, and a second substrate that are sequentially stacked in a first direction.
[0007] The working electrode and / or counter electrode include a conductive layer, and at least one of a seed reaction layer and a seed protection layer;
[0008] The conductive layer is configured to provide an electron conduction path;
[0009] The seed reaction layer is configured to reversibly alter its optical properties through the deposition and dissolution of an internal metal.
[0010] The seed protection layer is configured to inhibit the oxidation or corrosion of the seed reaction layer.
[0011] Preferably, both the working electrode and the counter electrode include a conductive layer, a seed reaction layer, and a seed protection layer.
[0012] Preferably, the working electrode includes a conductive layer, a seed reaction layer, and a seed protection layer sequentially stacked in a first direction; wherein the seed protection layer is disposed close to the electrolyte layer;
[0013] The counter electrode comprises a conductive layer, a seed reaction layer, and a seed protection layer sequentially stacked in a first direction; wherein the seed protection layer is disposed close to the electrolyte layer.
[0014] Preferably, the conductive layer comprises one or more structures, including one or more of indium tin oxide layer, aluminum-doped zinc oxide layer, fluorine-doped tin oxide layer, graphene film and silver nanowire film.
[0015] Preferably, the seed reaction layer comprises one or more layers of structure composed of nanoscale metal seed crystals; the metal includes one or more of copper, silver, gold, nickel, palladium and platinum.
[0016] Preferably, the seed protective layer comprises one or more layers of structure, which are composed of a migratory metallic material; the migratory metallic material includes one or more of copper, tin, zinc, and silver.
[0017] Preferably, the electrolyte layer is composed of a gel-state or solid electrolyte, including metal ions and ionic liquids; the metal ions include and One or more of them.
[0018] Preferably, the thickness of the conductive layer is 50nm~200nm.
[0019] Preferably, the total thickness of the seed reaction layer is less than or equal to 15 nm.
[0020] Preferably, the total thickness of the seed protective layer is less than or equal to 10 nm;
[0021] When the seed protective layer includes two or more layers, the seed protective layer forms a continuous film, a micro-discontinuous film, or a doped structure.
[0022] Compared with existing technologies, the above technical solution has the following advantages:
[0023] 1. A highly modular and flexible electroreflective device solution is provided. This is achieved by introducing at least one of the following: a functionally defined conductive layer, a seed reaction layer, and a seed protection layer, into the working electrode and / or the counter electrode. The conductive layer establishes an efficient electron conduction network, while the seed reaction layer directly controls the reversible switching of optical performance. The seed protection layer effectively suppresses passivation and failure of the reaction layer, thus greatly ensuring the stability and lifespan of the device during long-term cyclic operation. This allows the device to be customized according to different performance requirements (such as cost, lifespan, and response speed). For example, a complete composite layer including the conductive layer, seed reaction layer, and seed protection layer can be set only on the critical electrode, while the other electrode uses a simplified structure, thereby optimizing design freedom and cost control while ensuring core functionality. This structural versatility provides broad adaptability for its industrial applications.
[0024] 2. Furthermore, by constructing complete composite layer structures in both the working electrode and the counter electrode, this device achieves synergy and enhancement of the functions of the two electrodes: First, a highly efficient electronic conduction network is established through the conductive layer, responsible for rapidly and uniformly applying the external driving voltage to the entire electrode working surface, ensuring that the electrochemical reaction can occur synchronously and consistently. Then, under the action of the conductive layer, the seed reaction layer undergoes a reversible electrochemical reaction responsible for the reversible switching of optical performance. Finally, the seed protection layer preferentially reacts with harmful substances or prevents them from contacting the reaction layer, effectively suppressing the passivation and failure of the reaction layer, thereby greatly ensuring the stability and lifespan of the device during long-term cyclic operation, forming a fully functional composite layer structure;
[0025] 3. The conductive layer is configured as one or more layers comprising indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, graphene film, and silver nanowire film, ensuring efficient and uniform charge injection. Furthermore, the graphene film and silver nanowire film are suitable for flexible applications, expanding the applicability of this application. Simultaneously, the reflective functional layer composed of specific nanometal seeds provides ample active sites for rapid and significant optical switching. Similarly, the migratable metal protective material actively and effectively delays the degradation of the core reaction region. Combined with the electrolyte system that matches the material to these functional layers, this ensures a balance between high performance and long lifespan from the material's fundamental source.
[0026] 4. By precisely controlling the thickness of each functional layer, an optimal balance was successfully achieved between charge transport, ion migration, and optical performance. This allows the protective barrier to effectively isolate harmful factors without hindering the smooth passage of working ions, thus solving the problem of balancing stability and response speed in existing technologies. Attached Figure Description
[0027] Figure 1 This is a schematic diagram of the electroluminescent device provided in this application;
[0028] Figure 2 A schematic diagram of the working electrode of the electroluminescent device provided in this application;
[0029] Figure 3 This is a schematic diagram of the counter electrode of the electroluminescent device provided in this application. Detailed Implementation
[0030] The advantages of this utility model are further illustrated below with reference to the accompanying drawings and specific embodiments.
[0031] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure as detailed in the appended claims.
[0032] The terminology used in this disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The singular forms “a,” “the,” and “the” as used in this disclosure and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.
[0033] It should be understood that although the terms first, second, third, etc., may be used in this disclosure to describe various information, such information should not be limited to these terms. These terms are used only to distinguish information of the same type from one another. For example, without departing from the scope of this disclosure, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."
[0034] In the description of this utility model, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0035] In the description of this utility model, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.
[0036] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrating this invention and has no specific meaning in itself. Therefore, "module" and "part" can be used interchangeably.
[0037] Please see Figures 1-3 , Figure 1 This is a schematic diagram of the electroluminescent device provided in this application; Figure 2 A schematic diagram of the working electrode of the electroluminescent device provided in this application; Figure 3 This is a schematic diagram of the counter electrode of the electroluminescent device provided in this application.
[0038] like Figures 1-3 As shown, this utility model discloses an electroluminescent device, which includes a first substrate, a working electrode, an electrolyte layer, a counter electrode, and a second substrate that are sequentially stacked in a first direction.
[0039] The working electrode and / or counter electrode include a conductive layer, and at least one of a seed reaction layer and a seed protection layer;
[0040] The conductive layer is configured to provide an electron conduction path;
[0041] The seed reaction layer is configured to reversibly alter its optical properties through the deposition and dissolution of an internal metal.
[0042] The seed protection layer is configured to inhibit the oxidation or corrosion of the seed reaction layer.
[0043] By introducing at least one of a functionally defined conductive layer, a seed reaction layer, and a seed protection layer, a highly modular and universal paradigm for constructing electroreflective devices is provided. The conductive layer establishes an efficient electronic conduction framework, ensuring rapid and uniform signal transmission and distribution. The seed reaction layer, as the core of functional execution, directly achieves optical state switching through the reversible deposition and dissolution of metal. The seed protection layer acts as a guardian, effectively suppressing chemical corrosion and performance degradation of the reaction layer. This modular design provides the device with significant design flexibility, allowing for customized electrode configurations based on specific application scenarios (such as different emphases on cost, lifespan, or response speed). For example, the complete composite layer can be used only on critical electrodes, thereby optimizing manufacturing costs and design freedom while ensuring core functionality, laying a solid foundation for the industrialization of the technology. It is compatible with an existing electroreflective device production line.
[0044] The above is an explanation of the basic concept of this application. The following will describe the possible specific implementation methods of this application.
[0045] Continue to refer to Figures 1-3 ,like Figures 1-3 As shown, in one possible implementation, both the working electrode and the counter electrode include a conductive layer, a seed reaction layer, and a seed protection layer.
[0046] By defining complete composite layer structures for both the working electrode and the counter electrode, device performance is enhanced. The working electrode focuses on performing rapid optical switching, while the counter electrode acts as a stable ion buffer, efficiently and controllably providing or receiving reaction ions. This balances the workload during electrochemical cycling, avoiding increased side reactions or interface polarization problems caused by the performance bottleneck of a single electrode, thereby significantly improving the device's cycle life and overall reliability at the system level.
[0047] Furthermore, the specific structures of the working electrode and the counter electrode are also not limited.
[0048] In one possible implementation, the working electrode includes a conductive layer, a seed reaction layer, and a seed protection layer sequentially stacked in a first direction; wherein the seed reaction layer is disposed close to the electrolyte layer.
[0049] The counter electrode comprises a conductive layer, a seed reaction layer, and a seed protection layer sequentially stacked in a first direction; wherein the seed protection layer is disposed close to the electrolyte layer.
[0050] Furthermore, by constructing complete composite layer structures in both the working electrode and the counter electrode, this device achieves synergy and enhancement of the functions of the two electrodes: First, a highly efficient electronic conduction network is established through the conductive layer, responsible for rapidly and uniformly applying the external driving voltage to the entire electrode working surface, ensuring that the electrochemical reaction can occur synchronously and consistently. Then, under the action of the conductive layer, the seed reaction layer undergoes a reversible electrochemical reaction responsible for the reversible switching of optical performance. Finally, the seed protection layer preferentially reacts with harmful substances or prevents them from contacting the reaction layer, effectively suppressing the passivation and failure of the reaction layer, thereby greatly ensuring the stability and lifespan of the device during long-term cyclic operation, forming a fully functional composite layer structure.
[0051] The above is a description of the specific structure of each component. It should be noted that the specific implementation methods of the conductive layer, seed protection layer, and seed reaction layer are not limited.
[0052] In one possible implementation, the conductive layer comprises one or more structures, including one or more of indium tin oxide (ITO), aluminum-doped zinc oxide (AD), fluorine-doped tin oxide (FD), graphene film, and silver nanowire film. These materials exhibit high conductivity and high light transmittance, ensuring efficient and uniform charge injection. Furthermore, the graphene film and silver nanowire film possess a degree of flexibility, thereby expanding the application scenarios of the electroreflective device provided in this application, making it suitable for flexible environments.
[0053] Regarding the seed reaction layer, in one possible implementation, the seed reaction layer comprises one or more structures composed of nanoscale metal seed crystals; the metal includes one or more of copper, silver, gold, nickel, palladium, and platinum. The nanoscale seed reaction layer increases the specific surface area, thereby providing a high density of reaction sites, greatly promoting electrochemical reaction kinetics, and is a direct guarantee for achieving high optical contrast and fast response speed, shortening the device response time to 200-300 ms. Furthermore, through the synergistic regulation of the metal seed crystals, the reflectivity can be regulated within a range of 20%-80%, and the optical contrast ratio ≥60%.
[0054] The seed layer comprises one or more layers of a structure made of migratory metallic materials, including one or more of copper, tin, zinc, and silver. These migratory metallic protective materials can actively delay the failure of the core reaction layer through preferential reaction or barrier formation, thereby further extending the device's cycle life. This results in an electrode performance degradation rate of <5% after 2000 cycles.
[0055] Furthermore, the thickness of each layer is also unlimited.
[0056] In one possible implementation, the thickness of the conductive layer is 50 nm to 200 nm. The total thickness of the seed reaction layer is less than or equal to 15 nm. The total thickness of the seed protection layer is less than or equal to 10 nm.
[0057] By precisely controlling the thickness of each functional layer, an optimal balance was successfully achieved between charge transport, ion migration, and optical performance. This allows the protective barrier to effectively isolate harmful factors without hindering the smooth passage of working ions, thus solving the problem of balancing stability and response speed in existing technologies.
[0058] Those skilled in the art will understand that the specific structure of the seed protective layer is not limited. For example... Figure 2 As shown, in one possible implementation, when the seed protective layer includes two or more layers, the seed protective layer forms a continuous film, a micro-discontinuous film, or a doped structure.
[0059] In terms of preparation, the seed protective layer is pre-deposited by physical vapor deposition (PVD) and deposited before the seed reaction layer to form a nested structure of "protective layer-reaction layer", which can suppress the oxidation diffusion of the reaction layer metal.
[0060] The above describes specific embodiments of the electroluminescent device provided in this application. A method for fabricating the above-described electrode structure will also be provided below by way of example.
[0061] The preparation method includes: 1. Substrate pretreatment: cleaning and plasma activation of the substrate;
[0062] 2. Conductive layer preparation: ITO / AZO / FTO layers are deposited using magnetron sputtering or evaporation.
[0063] 3. Preparation of seed reaction layer: A platinum-gold composite seed layer (total thickness 10 nm) is formed on the surface of the conductive layer by electrochemical deposition or magnetron sputtering.
[0064] 4. Seed protective layer deposition: A silver film (2.5 nm thick) is generated on the surface of the seed reaction layer by PVD or ALD deposition.
[0065] 5. Electrode preparation: Repeat steps 1-4, with the layer sequence being "conductive layer - reactive layer - protective layer";
[0066] 6. Device assembly: The working electrode, electrolyte, and counter electrode are sequentially attached and packaged to obtain the electroluminescent device.
[0067] The above describes the structure and possible fabrication methods of the electroluminescent device provided in this application. To further facilitate understanding of this solution by those skilled in the art, some embodiments are provided below for reference.
[0068] Example 1: 1. A 100μm thick PET film was selected as the substrate, and after ultrasonic cleaning, it was treated with oxygen plasma (power 100W, time 30s).
[0069] 2. An AZO conductive layer (100 nm thick, sheet resistance < 20 Ω / □) was deposited using magnetron sputtering.
[0070] 3. Pt and Au nanolayers were deposited as a composite seed layer by electron beam evaporation (PVD) (total thickness 10 nm, Pt: Au = 1:4).
[0071] 4. A silver layer (5nm thick) was deposited as a protective layer using magnetron sputtering.
[0072] 5. The working electrode structure was obtained as "PET-AZO-PtAu-Ag".
[0073] Example 2: 1. Glass substrate is used. After cleaning, an FTO conductive layer (150nm thick) is deposited.
[0074] 2. A nickel-platinum seed reaction layer (10 nm thick, Ni:Pt = 1:1) was deposited by magnetron sputtering.
[0075] 3. A silver layer (3 nm thick) was deposited by magnetron sputtering as a protective layer.
[0076] 4. The counter electrode structure obtained is "glass-FTO-nickel-platinum layer-silver layer".
[0077] It should be noted that the embodiments of this utility model have better implementability and are not intended to limit this utility model in any way. Any person skilled in the art may use the above-disclosed technical content to change or modify it into equivalent effective embodiments. However, any modifications or equivalent changes and modifications made to the above embodiments based on the technical essence of this utility model without departing from the content of the technical solution of this utility model shall still fall within the scope of the technical solution of this utility model.
Claims
1. An electroluminescent device, characterized in that, The electroluminescent device includes a first substrate, a working electrode, an electrolyte layer, a counter electrode, and a second substrate, which are sequentially stacked in a first direction. The working electrode and / or the counter electrode include a conductive layer, and further include at least one of a seed reaction layer and a seed protection layer; The conductive layer is configured to provide an electron conduction path; The seed reaction layer is configured to reversibly alter the optical properties of the seed reaction layer through the deposition and dissolution of internal metals. The seed protective layer is configured to inhibit the oxidation or corrosion of the seed reaction layer.
2. The electroluminescent device as described in claim 1, characterized in that, Both the working electrode and the counter electrode include a conductive layer, a seed reaction layer, and a seed protection layer.
3. The electroluminescent device as described in claim 2, characterized in that, The working electrode includes the conductive layer, the seed reaction layer, and the seed protection layer, which are sequentially stacked in the first direction; wherein the seed protection layer is disposed close to the electrolyte layer. The counter electrode includes the conductive layer, the seed reaction layer and the seed protection layer, which are sequentially stacked in the first direction; wherein the seed protection layer is disposed close to the electrolyte layer.
4. The electroluminescent device as described in claim 2, characterized in that, The conductive layer includes one or more structures, including one or more of the following: indium tin oxide layer, aluminum-doped zinc oxide layer, fluorine-doped tin oxide layer, graphene film, and silver nanowire film.
5. The electroluminescent device as described in claim 4, characterized in that, The thickness of the conductive layer is 50nm~200nm.
6. The electroluminescent device as described in claim 1, characterized in that, The total thickness of the seed reaction layer is less than or equal to 15 nm.
7. The electroluminescent device as described in claim 1, characterized in that, The total thickness of the seed crystal protective layer is less than or equal to 10 nm; When the seed protective layer comprises two or more layers, the seed protective layer forms a continuous film, a micro-discontinuous film, or a doped structure.