A high containment boron fluoride ion implantation chamber

By introducing an embedded sealing plate and sealing strip into the boron-fluorine ion implantation chamber, combined with a vacuum pump and pressure sensor, the problems of sealing detection and ion ejector height adjustment are solved, achieving high sealing performance and flexible boron-fluorine ion implantation.

CN224501884UActive Publication Date: 2026-07-14JIANGYIN AIJIEXIN VACUUM TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGYIN AIJIEXIN VACUUM TECH CO LTD
Filing Date
2025-08-04
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

The existing boron-fluorine ion implantation chamber has difficulty in sealing, and the height of the ion ejector head is not easy to adjust.

Method used

A highly airtight boron-fluorine ion injection chamber was designed, comprising a base, a chamber sealing door, an embedded sealing plate, and a sealing strip. Combined with a vacuum pump, a pressure sensor, and brakeable casters, it enables airtightness detection and ion ejector head height adjustment.

Benefits of technology

The improved chamber sealing facilitates the detection and adjustment of the ion ejector head height, meeting diverse application requirements and ensuring the accuracy and efficiency of boron-fluorine ion implantation.

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Abstract

The utility model relates to boron fluoride ion implantation technical field, and disclose a kind of high sealing boron fluoride ion implantation chamber, including base, chamber sealing door and ion implantation chamber;The top of base is equipped with ion implantation chamber by bolt, and the side opening of ion implantation chamber is connected with chamber sealing door by hinge, and the inboard of chamber sealing door is equipped with embedded sealing plate by screw, and the inboard of chamber sealing door and located embedded sealing plate peripheral bonding have sealing rubber strip, and the upper end of the other side of ion implantation chamber is equipped with injection pipe butt joint by reserved hole, and the side of ion implantation chamber is equipped with vacuum pump by mounting seat, and the side of vacuum pump is equipped with pressure sensor by screw and the lower end of pressure sensor is equipped with timer by screw;Boron fluoride ion implantation chamber is convenient for detecting sealing property, improves its sealing effect, and is convenient for adjusting the height of ion jet head.
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Description

Technical Field

[0001] This utility model relates to the field of boron and fluorine ion implantation technology, and in particular to a highly sealed boron and fluorine ion implantation chamber. Background Technology

[0002] The boron-fluorine ion implantation chamber is the core component of the ion implanter for generating, accelerating, screening, and implanting boron trifluoride ions into semiconductor materials. Its working principle involves ion source generation, electric field acceleration, magnetic field screening, vacuum implantation, and annealing. Ultimately, the electrical properties of semiconductor materials are regulated by precisely controlling the boron-fluorine ion implantation.

[0003] Previous boron-fluorine ion implantation chambers have the following drawbacks: 1. They are inconvenient for testing and improving sealing performance, and 2. They are inconvenient for adjusting the height of the ion ejector head. Therefore, those skilled in the art have provided a high-sealing boron-fluorine ion implantation chamber to solve the problems mentioned in the background art. Utility Model Content

[0004] The main objective of this invention is to provide a highly sealed boron-fluorine ion implantation chamber to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A highly airtight boron-fluorine ion implantation chamber includes a base, a chamber sealing door, and an ion implantation chamber;

[0007] An ion implantation chamber is bolted to the top of the base. A chamber sealing door is hinged to one side of the ion implantation chamber opening. An embedded sealing plate is screwed to the inside of the chamber sealing door. A sealing strip is adhered to the inside of the chamber sealing door and around the embedded sealing plate. An implantation tube connector is installed at the upper end of the other side of the ion implantation chamber through a pre-drilled hole. A vacuum pump is mounted on one side of the ion implantation chamber via a mounting base. A pressure sensor is screwed to one side of the vacuum pump, and a timer is screwed to the lower end of the pressure sensor. An adjusting electric cylinder is mounted on the top of the ion implantation chamber via a mounting base, and an ion ejector head is screwed to the output shaft of the adjusting electric cylinder.

[0008] As a further improvement of this utility model: the ion ejector head is connected to the injection tube connector via a connecting pipe, and one end of the injection tube connector is connected to a docking plate.

[0009] As a further embodiment of this invention: the suction end of the vacuum pump is connected to the ion injection chamber through a delivery pipe. A control valve is provided on the delivery pipe. Closing the valve body on the connecting pipe and opening the control valve on the delivery pipe allows the vacuum pump to evacuate the ion injection chamber.

[0010] As a further improvement of this utility model: the embedded sealing plate faces the opening on one side of the ion implantation chamber, and both the sealing strip and the embedded sealing plate are made of silicone rubber.

[0011] As a further improvement of this invention: the detection end of the pressure sensor is located in the ion implantation chamber, and the pressure sensor facilitates the detection of the pressure value in the ion implantation chamber, making it easy for personnel to know.

[0012] As a further improvement of this utility model, a brakeable omnidirectional wheel is bolted to the bottom corner of the base.

[0013] Compared with the prior art, the beneficial effects of this utility model are:

[0014] 1. Place the wafer to be processed into the ion implantation chamber, close the chamber sealing door, and use the embedded sealing plate and sealing strip to greatly improve the sealing performance of the ion implantation chamber. Close the valve body on the connecting pipe and open the control valve on the delivery pipe. Use a vacuum pump to evacuate the ion implantation chamber. Use a pressure sensor to easily detect the pressure value in the ion implantation chamber for easy personnel monitoring. Use a timer to easily detect the pressure change value within a specified time, thereby detecting the sealing performance of the ion implantation chamber.

[0015] 2. Brakeable casters facilitate the movement of the entire device to the side of the ion implanter. The implantation tube connector is connected to the ion acceleration tube of the ion implanter using a docking plate. The accelerated boron and fluorine ions enter the ion ejector head through the connecting tube and are ejected, making it easy to spray onto the wafer. The height of the ion ejector head can be adjusted using an adjustable electric cylinder to meet different usage requirements. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the overall structure of a high-sealing boron-fluorine ion injection chamber according to the present invention.

[0017] Figure 2 This is a schematic diagram of the internal structure of an ion implantation chamber for a highly sealed boron-fluorine ion implantation chamber according to the present invention.

[0018] Figure 3 This is a schematic diagram of the sealing strip structure of a high-sealing boron-fluorine ion injection chamber according to the present invention.

[0019] In the diagram: 1. Base; 2. Control valve; 3. Delivery pipe; 4. Brakeable caster wheel; 5. Timer; 6. Chamber sealing door; 7. Pressure sensor; 8. Embedded sealing plate; 9. Vacuum pump; 10. Injection pipe connector; 11. Docking plate; 12. Ion implantation chamber; 14. Connecting pipe; 15. Adjusting electric cylinder; 16. Ion ejector head; 17. Sealing strip. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] Please see Figure 1-3 In this embodiment of the present invention, a highly sealed boron-fluorine ion implantation chamber includes a base 1, a chamber sealing door 6, and an ion implantation chamber 12.

[0022] An ion implantation chamber 12 is bolted to the top of the base 1. A chamber sealing door 6 is hinged to one side of the opening of the ion implantation chamber 12. An embedded sealing plate 8 is screwed to the inside of the chamber sealing door 6. A sealing strip 17 is glued to the inside of the chamber sealing door 6 and around the embedded sealing plate 8. An injection tube connector 10 is installed at the upper end of the other side of the ion implantation chamber 12 through a reserved hole. A vacuum pump 9 is mounted on one side of the ion implantation chamber 12 through a mounting base. A pressure sensor 7 is screwed to one side of the vacuum pump 9, and a timer 5 is screwed to the lower end of the pressure sensor 7. An adjusting electric cylinder 15 is mounted on the top of the ion implantation chamber 12 through a mounting base, and an ion ejector head 16 is screwed to the output shaft of the adjusting electric cylinder 15.

[0023] The ion ejector head 16 is connected to the injection tube connector 10 via the connecting pipe 14. One end of the injection tube connector 10 is connected to the docking plate 11. The injection tube connector 10 is connected to the ion acceleration tube of the ion implanter via the docking plate 11.

[0024] The vacuum pump 9 is connected to the ion implantation chamber 12 via the delivery pipe 3, and a control valve 2 is installed on the delivery pipe 3. The valve body on the connecting pipe 14 is closed and the control valve 2 on the delivery pipe 3 is opened, and the vacuum pump 9 is used to evacuate the ion implantation chamber 12.

[0025] The embedded sealing plate 8 faces the opening on one side of the ion implantation chamber 12. Both the sealing strip 17 and the embedded sealing plate 8 are made of silicone rubber. Silicone rubber has high elasticity, good toughness, corrosion resistance, is not easily damaged, and is durable.

[0026] The detection end of the pressure sensor 7 is located inside the ion implantation chamber 12; the pressure sensor 7 facilitates the detection of the pressure value inside the ion implantation chamber 12, making it easy for personnel to know.

[0027] Among them, a brakeable universal wheel 4 is bolted to the bottom corner of the base 1; the brakeable universal wheel 4 makes it easy to move the whole device to the side of the ion implanter.

[0028] The working principle of this utility model is as follows: The wafer to be processed is placed in the ion implantation chamber 12, the chamber sealing door 6 is closed, and the sealing performance of the ion implantation chamber 12 is greatly improved by using the embedded sealing plate 8 and sealing strip 17. The valve body on the connecting pipe 14 is closed and the control valve 2 on the delivery pipe 3 is opened. The vacuum pump 9 is used to evacuate the ion implantation chamber 12. The pressure sensor 7 is used to detect the pressure value in the ion implantation chamber 12, which is easy for personnel to know. The timer 5 is used to detect the pressure change value within a specified time, thereby detecting the sealing performance of the ion implantation chamber 12. The brakeable universal wheel 4 is used to move the whole device to one side of the ion implanter. The implantation tube connector 10 is connected to the ion acceleration tube of the ion implanter by the docking plate 11. The accelerated boron and fluorine ions enter the ion ejector head 16 through the connecting pipe 14 and are ejected, which is convenient for spraying onto the wafer. The height of the ion ejector head 16 is adjusted by the adjusting electric cylinder 15 to meet different usage requirements.

[0029] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A highly sealed boron-fluorine ion implantation chamber, comprising a base (1), a chamber sealing door (6), and an ion implantation chamber (12). Its characteristics are: An ion implantation chamber (12) is bolted to the top of the base (1). A chamber sealing door (6) is hinged to one side of the opening of the ion implantation chamber (12). An embedded sealing plate (8) is screwed to the inside of the chamber sealing door (6). A sealing strip (17) is glued to the inside of the chamber sealing door (6) and to the outside of the embedded sealing plate (8). An injection tube connector (10) is installed at the upper end of the other side of the ion implantation chamber (12) through a reserved hole. A vacuum pump (9) is mounted on one side of the ion implantation chamber (12) through a mounting seat. A pressure sensor (7) is mounted on one side of the vacuum pump (9) through a screw, and a timer (5) is mounted on the lower end of the pressure sensor (7) through a screw. An adjusting electric cylinder (15) is mounted on the top of the ion implantation chamber (12) through a mounting seat, and an ion ejector head (16) is mounted on the output shaft of the adjusting electric cylinder (15) through a screw.

2. The highly sealed boron-fluorine ion implantation chamber according to claim 1, characterized in that: The ion ejector head (16) is connected to the injection tube connector (10) via a connecting pipe (14), and one end of the injection tube connector (10) is connected to a docking plate (11).

3. The highly sealed boron-fluorine ion implantation chamber according to claim 1, characterized in that: The suction end of the vacuum pump (9) is connected to the ion injection chamber (12) through the delivery pipe (3), and a control valve (2) is provided on the delivery pipe (3).

4. The high-sealing boron-fluorine ion implantation chamber according to claim 1, characterized in that: The embedded sealing plate (8) faces the opening on one side of the ion implantation chamber (12), and both the sealing strip (17) and the embedded sealing plate (8) are made of silicone rubber.

5. The high-sealing boron-fluorine ion implantation chamber according to claim 1, characterized in that: The detection end of the pressure sensor (7) is located inside the ion implantation chamber (12).

6. The highly sealed boron-fluorine ion implantation chamber according to claim 1, characterized in that: Brake casters (4) are bolted to the bottom corner of the base (1).