Semiconductor dry etching machine upper electrode structure and dry etching equipment

Abstract

The utility model discloses a kind of upper electrode structure of semiconductor dry etching machine and dry etching equipment, it is related to etching field, and upper electrode structure includes annular bearing table, bearing table is fixed with upper electrode in, the top surface of upper electrode is electrically connected with the conductive surface, the bottom surface of bearing table is fixed with the insulating cover layer of gap formed by the side surface and vertical surface of the upper electrode;Dry etching equipment includes etching cavity, upper electrode structure is installed in the inside upper portion of etching cavity, the lower portion of etching cavity is equipped with lower electrode structure, and the conductive sheet for grounding is connected on lower electrode structure;The utility model covers the gap between the periphery of upper electrode and bearing table by insulating cover layer, reduce plasma acting in the base area of lower electrode, weaken the corrosion and bombardment of plasma to conductive sheet, weaken the consumption of conductive sheet, increase the service life of conductive sheet, reduce the replacement frequency of conductive sheet, improve work efficiency.

Description

Technical Field

[0001] This utility model relates to the field of etching technology, and in particular to an electrode structure and dry etching equipment for a semiconductor dry etching machine. Background Technology

[0002] Dry etching equipment is a key process tool in semiconductor manufacturing and microelectronics processing, used to remove materials using physical or chemical methods to form micro- and nano-scale structures. Unlike wet etching (liquid chemical etching), dry etching is performed in a gas phase or plasma environment, offering advantages such as high precision and strong anisotropy (vertical etching), making it suitable for the manufacture of advanced chips and devices.

[0003] Patent application number CN202110560026.1 discloses a carrier device and a semiconductor process apparatus. The semiconductor process apparatus includes a process chamber, an upper electrode mechanism, and a lower electrode mechanism. The upper electrode mechanism includes a spray head disposed at the top of the process chamber and an upper electrode power supply electrically connected to the spray head. The lower electrode mechanism includes a carrier device for carrying a wafer. The carrier device is grounded.

[0004] In dry etching equipment, the connection of the conductive sheet to the lower electrode base is a crucial design feature, primarily aimed at ensuring plasma uniformity, process stability, and equipment safety. For RIE / ECCP type dry etching equipment, the conductive sheet can be etched and fractured under the high-power bombardment and corrosion from process gases (Cl2, SF6). This fracture affects the overall contact area of ​​the equipment, and the conductive surface causes plasma flickering, uneven plasma distribution, and abnormal discharge phenomena, rendering the process impossible and necessitating the replacement of the conductive sheet.

[0005] In RIE / ECCP type dry etching equipment, the corners of the upper electrode's support platform need to be treated as insulating surfaces, and the side of the support platform that contacts the top surface of the upper electrode is conductive, allowing for electrical connection between the support platform and the upper electrode. During the installation of the upper electrode, adjusting the fixing screw hole positions causes friction between the upper electrode and the already completed insulating surface of the cavity, resulting in wear and tear on the insulating surface. This causes the horizontal surface between the upper electrode and the support platform to change from insulated and non-conductive to non-insulated and conductive, increasing the conductive area. Consequently, the plasma expands, increasing the contact strength and area of ​​the conductive sheet on the lower electrode base with the plasma, accelerating the wear of the conductive sheet, increasing the replacement frequency of the conductive sheet, and affecting work efficiency. Therefore, this utility model discloses an upper electrode structure for a semiconductor dry etching machine and a dry etching device to solve the above problems. Utility Model Content

[0006] Based on this, it is necessary to address the aforementioned technical problems by providing an upper electrode structure and dry etching equipment for a semiconductor dry etching machine. By covering the gap between the upper electrode and the support stage with an insulating covering layer, the contact between the back of the upper electrode and the support stage is improved, and the upper electrode is partially shielded. This reduces the plasma's effect on the base area of ​​the lower electrode, weakens the corrosion and bombardment of the conductive sheet by the plasma, reduces the consumption of the conductive sheet, increases the service life of the conductive sheet, and reduces the replacement frequency of the conductive sheet, thereby improving work efficiency.

[0007] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0008] An upper electrode structure for a semiconductor dry etching machine includes an annular support platform, an upper electrode fixed inside the support platform, the support platform having intersecting vertical and horizontal surfaces, and a conductive surface provided on the horizontal surface, the top surface of the upper electrode being in contact with the conductive surface, and an insulating covering layer fixed on the bottom surface of the support platform to cover the gap formed between the side surface and the vertical surface of the upper electrode.

[0009] As a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the upper electrode is provided with a plurality of uniformly distributed gas spray heads, and an air inlet pipe is connected to the upper electrode.

[0010] As a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the support platform is provided with a plurality of bolt rods passing through the horizontal surface, the edge of the upper electrode is provided with a plurality of through holes, the bolt rods are threadedly connected to a locking nut after passing through the through holes, and the outer side of the bolt rods is threadedly connected to an insulating cap covering the locking nut.

[0011] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the insulating cover layer is a ceramic plate or an aluminum plate, and the surface of the aluminum plate is prepared into an insulating layer by anodizing.

[0012] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the insulating cover layer is fixedly connected to the support platform by bolts with insulating caps.

[0013] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the lower end of the upper electrode protrudes from the lower surface of the support stage. The insulating cover layer includes a first cover layer and a second cover layer with a rectangular frame structure. The first cover layer is attached to the bottom surface of the support stage, and the lower surface of the first cover layer is on the same surface as the lower surface of the upper electrode. The second cover layer is pressed against the lower surfaces of the first cover layer and the upper electrode. Bolts with insulating caps pass through the second cover layer and the first cover layer in sequence and are threadedly connected to the support stage.

[0014] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the insulating covering layer is distributed in a ring shape and the outer side of the insulating covering layer is flush with the outer side of the support stage, and the inner side of the insulating covering layer covers the edge of the upper electrode.

[0015] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the side surface of the upper electrode and the vertical surface of the support platform are both insulating surfaces, and the gap between the side surface and the vertical surface of the upper electrode is 2-3mm. The insulating surface on the vertical surface of the support platform extends to the horizontal surface and contacts the conductive surface.

[0016] A dry etching apparatus includes the above-mentioned upper electrode structure of a semiconductor dry etching machine, and also includes an etching cavity. The upper electrode structure is installed inside the etching cavity, and the lower part of the etching cavity is provided with a lower electrode structure that is directly opposite to the upper electrode. A conductive sheet for grounding is connected to the lower electrode structure.

[0017] In a preferred embodiment of the dry etching apparatus provided by this utility model, the lower electrode structure includes a lower electrode base and a lower electrode. The lower electrode is placed horizontally on the lower electrode base, and the upper electrode is arranged parallel to the lower electrode, with a plasma region formed between the upper electrode and the lower electrode.

[0018] In a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, the conductive sheet is electrically connected to the lower electrode base.

[0019] As a preferred embodiment of the upper electrode structure of the semiconductor dry etching machine provided by this utility model, an exhaust port is provided on the side of the etching cavity.

[0020] Compared with the prior art, the present invention has the following beneficial effects: The upper electrode structure and dry etching equipment of the semiconductor dry etching machine provided by the present invention cover the gap between the upper electrode and the support stage through the insulating covering layer, improves the contact between the back of the upper electrode and the support stage and shields part of the upper electrode, reduces the plasma action on the base area of ​​the lower electrode, weakens the corrosion and bombardment of the conductive sheet by the plasma, reduces the consumption of the conductive sheet, increases the service life of the conductive sheet, reduces the replacement frequency of the conductive sheet, and thus improves the working efficiency. Attached Figure Description

[0021] To more clearly illustrate the solutions in this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1A three-dimensional schematic diagram of the overall structure of the upper electrode structure of the semiconductor dry etching machine provided by this utility model;

[0023] Figure 2 An exploded view of the overall structure of the upper electrode structure of the semiconductor dry etching machine provided by this utility model;

[0024] Figure 3 A bottom view of the overall structure of the upper electrode structure of the semiconductor dry etching machine provided by this utility model;

[0025] Figure 4 A planar schematic diagram of the upper electrode in the upper electrode structure of the semiconductor dry etching machine provided by this utility model;

[0026] Figure 5 A planar schematic diagram of the insulating covering layer in the upper electrode structure of the semiconductor dry etching machine provided by this utility model;

[0027] Figure 6 A schematic diagram of the overall structure of the dry etching equipment provided by this utility model.

[0028] The markings in the diagram are explained as follows:

[0029] 1. Support platform; 2. Vertical surface; 3. Horizontal surface; 4. Conductive surface; 5. Upper electrode; 6. Gas spray head; 7. Insulating cover layer; 71. First cover layer; 72. Second cover layer; 8. Bolt rod; 9. Through hole; 10. Locking nut; 11. Insulating cap; 12. Bolt; 13. Etching cavity; 14. Conductive sheet; 15. Lower electrode; 16. Lower electrode base; 17. Exhaust port. Detailed Implementation

[0030] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0031] As described in the background section, the connection of the conductive sheet to the lower electrode base is a crucial design element in dry etching equipment, primarily aimed at ensuring plasma uniformity, process stability, and equipment safety. For RIE / ECCP type dry etching equipment, the conductive sheet can be etched and fractured under the high-power bombardment and corrosion from process gases (Cl2, SF6). This fracture affects the overall contact area of ​​the equipment, and the conductive surface causes plasma flickering, uneven plasma distribution, and abnormal discharge phenomena, rendering the process impossible and necessitating the replacement of the conductive sheet.

[0032] In RIE / ECCP type dry etching equipment, the corner of the upper electrode's support stage needs to be treated as an insulating surface, and the side of the support stage that contacts the top surface of the upper electrode is a conductive surface to ensure electrical connection between the support stage and the upper electrode. During the installation of the upper electrode, when adjusting the position of the fixing screw holes, the movement of the upper electrode will cause friction with the already completed insulating surface of the cavity, resulting in the wear and tear of the insulating surface. This causes the gap between the upper electrode and the support stage, mainly the horizontal surface of the support stage, to change from being insulated and non-conductive to non-insulated and conductive, increasing the conductive area. This causes the plasma to expand, thereby increasing the strength and area of ​​contact between the conductive sheet on the lower electrode base and the plasma, accelerating the wear of the conductive sheet, increasing the replacement frequency of the conductive sheet, and affecting work efficiency.

[0033] To solve this technical problem, this utility model provides an electrode structure for a semiconductor dry etching machine and a dry etching device, which are applied in the field of dry etching technology.

[0034] For details, please refer to Figure 1-5 The upper electrode structure of the semiconductor dry etching machine specifically includes an annular support platform 1, an upper electrode 5 fixed inside the support platform 1, the support platform 1 having intersecting vertical surfaces 2 and horizontal surfaces 3, and a conductive surface 4 provided on the horizontal surface 3, the top surface of the upper electrode 5 being in contact with the conductive surface 4, and an insulating covering layer 7 fixed on the bottom surface of the support platform 1 to cover the gap formed between the side surface of the upper electrode 5 and the vertical surface 2.

[0035] For details, please refer to Figure 6 A dry etching apparatus includes the above-mentioned upper electrode 5 structure of a semiconductor dry etching machine, and also includes an etching cavity 13. The upper electrode 5 structure is installed inside the etching cavity 13. The lower part of the etching cavity 13 is provided with a lower electrode 15 structure that is directly opposite to the upper electrode 5. A conductive sheet 14 for grounding is connected to the lower electrode 15 structure.

[0036] The semiconductor dry etching machine upper electrode 5 structure and dry etching equipment provided by this utility model cover the gap between the upper electrode 5 and the support stage 1 around the periphery of the upper electrode 5 through the insulating covering layer 7, improve the contact between the back of the upper electrode 5 and the support stage 1 and shield part of the upper electrode 5, reduce the plasma action on the base area of ​​the lower electrode 15, weaken the corrosion and bombardment of the conductive sheet 14 by the plasma, reduce the consumption of the conductive sheet 14, increase the service life of the conductive sheet 14, reduce the replacement frequency of the conductive sheet 14, and thus improve work efficiency.

[0037] To enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.

[0038] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the present invention can be combined with each other.

[0039] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0040] Example 1

[0041] Please refer to Figure 1-5 This invention provides an upper electrode structure for a semiconductor dry etching machine, comprising an annular support platform 1, which is entirely insulated. The inner surface of the support platform 1 has a vertical surface 2 and a horizontal surface 3. A conductive surface 4 is provided on the horizontal surface 3, covering the entire horizontal surface 3. The vertical surface 2 and the horizontal surface 3 intersect perpendicularly to form a stepped groove. An upper electrode 5 is installed within the stepped groove. The upper electrode 5 is provided with several uniformly distributed gas spray heads 6, and an air inlet pipe is connected to the upper electrode 5. The gas spray heads 6 are used to uniformly output process gases (Cl2, SF6). The upper surface of the upper electrode 5... The upper electrode 5 is attached to the horizontal surface 3, so that the upper electrode 5 is electrically connected to the conductive surface 4. When the upper electrode 5 is installed, the upper electrode 5 is prone to wear on the insulating surface of the horizontal surface 3, causing part of the horizontal surface to change from insulating and non-conductive to non-insulating and conductive, increasing the conductive area. An insulating covering layer 7 is fixed on the bottom surface of the support platform 1 to cover the gap formed between the side surface of the upper electrode 5 and the vertical surface 2. The insulating covering layer 7 has a rectangular frame structure. The insulating covering layer 7 reduces the area of ​​plasma acting on the base of the lower electrode 15, weakens the corrosion and bombardment of the conductive sheet 14 by the plasma, and achieves the purpose of increasing its life.

[0042] Furthermore, the support platform 1 is provided with several bolt rods 8 passing through the cross surface 3. The cross surface 3 is rectangular. Multiple bolt rods 8 are arranged along the cross surface 3. Several through holes 9 are provided on the edge of the upper electrode 5. The through holes 9 are located on the outside of the gas spray head 6. After the bolt rod 8 passes through the through hole 9, a locking nut 10 is threadedly connected to it. An insulating cap 11 covering the locking nut 10 is threadedly connected to the outside of the bolt rod 8. The upper electrode 5 is fixed on the support platform 1 by the locking nut 10 and the bolt rod 8. The insulating cap 11 covers the metal locking nut 10 and the bolt rod 8 to ensure the insulation effect.

[0043] Furthermore, the insulating cover layer 7 is fixedly connected to the support platform 1 using bolts 12 with insulating caps to fix the insulating cover layer 7 to the support platform 1. Of course, to improve the fixing stability, the bolts 12 with insulating caps can also pass through the insulating cover layer 7 and connect to the upper electrode 5, and the end of the bolt 12 has an insulating cap to ensure insulation. The insulating cover layer 7 is distributed in a ring shape, and the outer edge of the insulating cover layer 7 is flush with the outer edge of the support platform 1. The inner side of the insulating cover layer 7 covers the edge of the upper electrode 5, and the width of the insulating cover layer 7 covering the edge of the upper electrode 5 is 3-5mm. In this example, the insulating cover layer 7 is also a rectangular frame structure. The insulating cover layer 7 covers the edge of the upper electrode 5 and can insulate the back of the upper electrode 5.

[0044] Furthermore, the side surface of the upper electrode 5 and the vertical surface 2 of the support platform 1 are both insulating surfaces, and the gap between the side surface of the upper electrode 5 and the vertical surface 2 is 2-3 mm. The insulating surface on the vertical surface of the support platform 1 extends to the horizontal surface 3 and connects with the conductive surface 4 to form an insulating surface with a stepped corner structure. The support platform 1 is made of metal and the insulating surface is prepared by anodizing. The side surface of the upper electrode 5 and the vertical surface 2 of the support platform 1 are both insulated by anodizing to form an insulating surface. The gap between the upper electrode 5 and the vertical surface 2 prevents the upper electrode 5 from touching the side surface of the insulating support platform during installation, thus avoiding damage to the insulating surface.

[0045] Example 2

[0046] The electrode structure on the semiconductor dry etching machine provided in Embodiment 1 is further optimized, specifically, as follows: Figure 1 , 5 As shown, the insulating cover layer 7 is a ceramic plate or an aluminum plate. When using an aluminum plate, the surface of the aluminum plate is prepared into an insulating layer by anodizing. In this example, the lower end of the upper electrode 5 protrudes from the lower surface of the support platform 1. When covering the insulating cover layer 7, a two-layer structure is adopted. The insulating cover layer 7 includes a first cover layer 71 and a second cover layer 72 with a rectangular frame structure. The first cover layer 71 is attached to the bottom surface of the support platform 1 and serves as a pad. The lower surface of the first cover layer 71 is located on the same surface as the lower surface of the upper electrode 5. The second cover layer 72 is pressed into the lower surface of the first cover layer 71 and the upper electrode 5. The bolt 12 with an insulating cap passes through the second cover layer 72 and the first cover layer 71 in sequence and is threadedly connected to the support platform 1 to fix the insulating cover layer 7. The insulating capping layer 7 can suppress the concentration of the edge electric field and improve the plasma uniformity. The dielectric properties of the insulating capping layer 7 change the potential distribution on the surface of the upper electrode 5, guide the plasma sheath to extend towards the lower electrode 15, enhance the verticality of ion bombardment, control the extension direction of the plasma sheath, make the plasma bombardment energy distribution more uniform, improve the anisotropic etching capability, and also protect the edge of the upper electrode 5 from highly active plasma corrosion.

[0047] Example 3

[0048] Please refer to Figure 6 A dry etching apparatus is provided, which includes the upper electrode structure of the semiconductor dry etching machine in Embodiment 2. The upper electrode structure is installed inside the etching chamber 13. A lower electrode 15 structure is provided at the lower part of the etching chamber 13, which is directly opposite to the upper electrode 5. A conductive sheet 14 for grounding is connected to the lower electrode 15 structure. Specifically, the lower electrode 15 structure includes a lower electrode base 16 and a lower electrode 15. The lower electrode 15 is placed horizontally on the lower electrode base 16. The upper electrode 5 is arranged parallel to the lower electrode, and a plasma region is formed between the upper electrode 5 and the lower electrode 15. The conductive sheet 14 is electrically connected to the lower electrode base 16. Multiple conductive sheets 14 can be provided and grounded. The conductive sheets 14 are used to conduct static electricity in the lower electrode base 16 to avoid static electricity accumulation. An exhaust port 17 is provided on the side of the etching chamber 13. The exhaust port 17 is used to communicate with a vacuum system to realize the evacuation and pressure control of the etching chamber 13. Both the upper electrode 5 and the lower electrode 15 are grounded. The upper electrode 5 is grounded through a conductive surface. This part is an existing structure and will not be described in detail here.

[0049] The working principle of the upper electrode structure and dry etching equipment of the semiconductor dry etching machine provided by this utility model is as follows: A conductive layer is covered on the horizontal surface 3 of the support platform 1, and the vertical surface 2 is insulated. After the upper electrode 5 is manufactured, the upper electrode 5 is insulated around its perimeter. Then, the upper electrode 5 is installed on the support platform 1, and the top surface of the upper electrode 5 is in contact with the conductive layer. Then, an insulating cover layer 7 is covered and fixed. The lower electrode 15 is installed according to the existing structure. The gap between the upper electrode 5 and the support platform 1 is covered by the insulating cover layer 7, which improves the contact between the back of the upper electrode 5 and the support platform 1 and shields part of the upper electrode 5. This reduces the plasma effect on the base area of ​​the lower electrode 15, weakens the corrosion and bombardment of the conductive sheet 14 by the plasma, reduces the consumption of the conductive sheet 14, increases the service life of the conductive sheet 14, reduces the replacement frequency of the conductive sheet 14, and thus improves the working efficiency.

[0050] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0051] Obviously, the embodiments described above are only some embodiments of this utility model, not all embodiments. The accompanying drawings show preferred embodiments of this utility model, but do not limit the patent scope of this utility model. This utility model can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this utility model. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this utility model specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the patent protection scope of this utility model.

Claims

1. A semiconductor dry etching machine upper electrode structure, comprising an annular support platform, wherein an upper electrode is fixed within the support platform, characterized in that, The support platform has intersecting vertical and horizontal surfaces, and a conductive surface is provided on the horizontal surface. The top surface of the upper electrode is in contact with the conductive surface and electrically connected. An insulating covering layer is fixed on the bottom surface of the support platform to cover the gap formed between the side surface of the upper electrode and the vertical surface.

2. The upper electrode structure of a semiconductor dry etching machine according to claim 1, characterized in that, The support platform is provided with several bolt rods that pass through the horizontal plane. The edge of the upper electrode is provided with several through holes. After the bolt rod passes through the through holes, a locking nut is threadedly connected to it. An insulating cap covering the locking nut is threadedly connected to the outer side of the bolt rod.

3. The upper electrode structure of a semiconductor dry etching machine according to claim 1, characterized in that, The insulating covering layer is a ceramic plate or an aluminum plate, and the surface of the aluminum plate is prepared into an insulating layer by anodizing.

4. The upper electrode structure of a semiconductor dry etching machine according to claim 1, characterized in that, The insulating cover layer is fixedly connected to the support platform using bolts with insulating caps.

5. The upper electrode structure of a semiconductor dry etching machine according to claim 4, characterized in that, The lower end of the upper electrode protrudes from the lower surface of the support platform. The insulating cover layer includes a first cover layer and a second cover layer with a rectangular frame structure. The first cover layer is attached to the bottom surface of the support platform. The lower surface of the first cover layer is on the same surface as the lower surface of the upper electrode. The second cover layer is pressed against the lower surfaces of the first cover layer and the upper electrode. Bolts with insulating caps pass through the second cover layer and the first cover layer in sequence and are threaded to the support platform.

6. The upper electrode structure of a semiconductor dry etching machine according to claim 1, characterized in that, The insulating covering layer is distributed in a ring shape, and the outer edge of the insulating covering layer is flush with the outer edge of the support platform. The inner surface of the insulating covering layer covers the edge of the upper electrode.

7. The upper electrode structure of a semiconductor dry etching machine according to claim 1, characterized in that, The side surface of the upper electrode and the vertical surface of the support platform are both insulating surfaces, and the gap between the side surface and the vertical surface of the upper electrode is 2-3mm. The insulating surface on the vertical surface of the support platform extends to the horizontal surface and is in contact with the conductive surface.

8. A dry etching apparatus, comprising an etching chamber, characterized in that, The upper part of the etching cavity is equipped with an upper electrode structure of a semiconductor dry etching machine as described in any one of claims 1-7, and the lower part of the etching cavity is provided with a lower electrode structure that is directly opposite to the upper electrode. A conductive sheet for grounding is connected to the lower electrode structure.

9. The dry etching apparatus according to claim 8, characterized in that, The lower electrode structure includes a lower electrode base and a lower electrode. The lower electrode is placed horizontally on the lower electrode base. The upper electrode is arranged parallel to the lower electrode, and a plasma region is formed between the upper electrode and the lower electrode.

10. A dry etching apparatus according to claim 9, characterized in that, The conductive sheet is electrically connected to the lower electrode base.

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