A protection device for a semiconductor device

Abstract

The application provides a protection device of a semiconductor device, and belongs to the technical field of semiconductor device protection. The protection device of the semiconductor device comprises a first magnetic acquisition module, a temperature acquisition module and a processing module. The first magnetic acquisition module is used for acquiring a space magnetic field signal of the semiconductor device, and the space magnetic field signal can reflect the current distribution of the semiconductor device to present the state of the internal current of the semiconductor device. The temperature acquisition module is used for acquiring a junction temperature signal of the semiconductor device, and the junction temperature signal can reflect the actual temperature condition of the semiconductor device. The processing module is connected with the first magnetic acquisition module and the temperature acquisition module, and is used for jointly controlling the semiconductor device to be turned off according to the space magnetic field signal and the junction temperature signal. In this way, the space magnetic field signal reflecting the current distribution of the semiconductor device is combined with the junction temperature signal reflecting the junction temperature condition of the semiconductor device, and the accuracy of the protection of the semiconductor device is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor device protection technology, and specifically to a protection device for semiconductor devices. Background Technology

[0002] Semiconductor devices, such as insulated-gate bipolar transistors (IGBTs), are core components in the field of power electronics and are widely used in various power conversion and control equipment. The reliable operation of semiconductor devices is crucial for the stability, safety, and performance of power electronic systems. However, semiconductor devices face various complex operating conditions and potential failure risks during operation, such as overcurrent, overvoltage, and overheating, which can lead to device damage and consequently, failure of the entire power electronic system.

[0003] Currently, to effectively protect semiconductor devices, Hall effect sensors are commonly used to monitor the current flowing through them, preventing overcurrent operation. However, acquiring current through Hall effect sensors only provides a single-point measurement, ignoring the uneven current distribution within the semiconductor device. This can easily lead to misjudgments or omissions in the protection measures, resulting in low accuracy in semiconductor device protection. Utility Model Content

[0004] In view of the shortcomings of the prior art, this application provides a protection device for semiconductor devices.

[0005] Firstly, this application provides a method for protecting a semiconductor device, comprising:

[0006] The first magnetic acquisition module is used to acquire the spatial magnetic field signals of semiconductor devices.

[0007] A temperature acquisition module is used to acquire the junction temperature signal of the semiconductor device;

[0008] The processing module is connected to the first magnetic acquisition module and the temperature acquisition module, and controls the semiconductor device to shut down based on the space magnetic field signal and the junction temperature signal.

[0009] Optionally, the semiconductor device includes bonding wires, an emitter metal layer, a composite shielding layer, a semiconductor layer, a silver-copper sintered layer, and a substrate;

[0010] The composite shielding layer comprises a cobalt-iron-boron-magnesium oxide composite film and a permalloy layer; the cobalt-iron-boron-magnesium oxide composite film is used to suppress high-frequency noise, and the permalloy layer is used to suppress low-frequency magnetic field interference.

[0011] The silver-copper sintered layer is used to connect the substrate, the semiconductor layer, and the emitter metal layer.

[0012] Optionally, the bonding wires, the emitter metal layer, the composite shielding layer, the semiconductor layer, the silver-copper sintered layer, and the substrate are arranged sequentially from top to bottom.

[0013] Optionally, the thickness of the cobalt-iron-boron-magnesium oxide composite film is 40nm-60nm, the thickness of the permalloy layer is 180nm-220nm, and the thickness of the silver-copper sintered layer is 15μm-25μm.

[0014] Optionally, the first magnetic acquisition module includes a first tunnel magnetoresistive array sensor;

[0015] An installation groove is formed on the emitter metal layer, and the first tunnel magnetoresistive array sensor is embedded in the installation groove. The sensitive axis of the first tunnel magnetoresistive array sensor is parallel to the current direction of the semiconductor device.

[0016] Optionally, the mounting groove is formed to a depth of 0.15 mm in the emitter metal layer.

[0017] Optionally, the first tunnel magnetoresistive array sensor includes a plurality of first sensing units arranged in an array.

[0018] The spacing between each of the first sensing units is 0.4 mm to 0.6 mm.

[0019] Optionally, a second magnetic acquisition module is also included at the bonding wire, for acquiring the bonding magnetic field signal of the bonding wire; wherein the bonding magnetic field signal is used to detect the health of the bonding wire.

[0020] The bonding wires include any one of the emitter bonding wires, collector bonding wires, and base bonding wires.

[0021] Optionally, the second magnetic acquisition module includes a second tunneling magnetoresistive array sensor, which is located directly below the bonding wire.

[0022] Optionally, the second tunnel magnetoresistive array sensor includes a plurality of second sensing units arranged in an array, wherein the spacing between each second sensing unit is 0.4 mm to 0.6 mm, and the vertical projection distance between each second sensing unit and the bonding line is between 0.2 mm and 0.4 mm.

[0023] In summary, this application first acquires the spatial magnetic field signal of the semiconductor device through a first magnetic acquisition module. This spatial magnetic field signal reflects the current distribution of the semiconductor device, thus revealing the state of the internal current. Next, a temperature acquisition module acquires the junction temperature signal of the semiconductor device, which reflects the actual temperature condition of the device. Finally, a processing module jointly controls the semiconductor device to shut down based on the spatial magnetic field signal transmitted by the first magnetic acquisition module and the junction temperature signal transmitted by the temperature acquisition module. Since there is a correlation between the temperature and current of the semiconductor device, the junction temperature signal can optimize the current deviation caused by temperature. Thus, combining the spatial magnetic field signal reflecting the current distribution of the semiconductor device with the junction temperature signal reflecting the junction temperature condition avoids, to some extent, the limitations of relying solely on single-point measured current as a protection criterion, thereby improving the accuracy of semiconductor device protection. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram illustrating an application scenario of a semiconductor device protection method in one embodiment of this application;

[0026] Figure 2 This is a flowchart of a method for protecting a semiconductor device in one embodiment of this application;

[0027] Figure 3 This is a flowchart of a semiconductor device turn-off method in one embodiment of this application;

[0028] Figure 4 This is a flowchart of a soft shutdown method in one embodiment of this application;

[0029] Figure 5 This is a schematic diagram of a protection device for a semiconductor device in one embodiment of this application;

[0030] Figure 6 This is a schematic diagram of a semiconductor device structure in one embodiment of this application;

[0031] Figure 7 This is a schematic diagram of the installation of the first magnetic acquisition module in one embodiment of this application;

[0032] Figure 8 This is a schematic diagram of the second magnetic acquisition module in one embodiment of this application;

[0033] Figure 9 This is a schematic diagram of an electronic device in one embodiment of this application.

[0034] Explanation of reference numerals in the attached drawings: 100, electronic device; 200, display device; 300, background database; 10, first magnetic acquisition module; 20, temperature acquisition module; 30, processing module; 40, second magnetic acquisition module; 1, bonding wire; 2, emitter metal layer; 21, mounting groove; 3, composite shielding layer; 4, semiconductor layer; 401, processor; 402, memory; 403, power supply; 404, input unit; 5, silver-copper sintered layer; 6, substrate. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified. In this application, the term "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described as "exemplary" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. The following description is provided to enable any person skilled in the art to implement and use this application. In the following description, details are set forth for illustrative purposes. It should be understood that those skilled in the art will recognize that this application can be implemented without using these specific details. In other instances, well-known structures and processes will not be described in detail to avoid unnecessary detail that would obscure the description of this application. Therefore, this application is not intended to be limited to the embodiments shown, but is consistent with the broadest scope of the principles and features disclosed in this application.

[0037] The semiconductor device protection device in the embodiments of this application is applied to the semiconductor device protection method, which is set in an electronic device; the electronic device can be a terminal, such as a mobile phone or a tablet computer, or it can be a server or a service cluster composed of multiple servers.

[0038] like Figure 1 As shown, Figure 1This is a schematic diagram of an application scenario for a semiconductor device protection device in an embodiment of this application. The application scenario for the semiconductor device protection device in this embodiment includes an electronic device 100, which integrates a semiconductor device protection method. The electronic device 100 runs a computer-readable storage medium corresponding to the semiconductor device protection device to execute the steps of the semiconductor device protection device.

[0039] Understandable Figure 1 The electronic devices in the application scenarios of the semiconductor device protection method shown, or the devices contained in the electronic devices, do not constitute a limitation on the embodiments of this application. That is, the number or type of devices in the application scenarios of the semiconductor device protection device, or the number or type of devices contained in each device, do not affect the overall implementation of the technical solution in the embodiments of this application, and can all be considered as equivalent substitutions or derivatives of the technical solutions claimed in the embodiments of this application.

[0040] In this application embodiment, the electronic device 100 can be an independent device, or a device network or device cluster composed of devices. For example, the electronic device 100 described in this application embodiment includes, but is not limited to, a computer, a network host, a single network device, a set of multiple network devices, or a cloud device composed of multiple devices. Among them, the cloud device is composed of a large number of computers or network devices based on cloud computing.

[0041] Those skilled in the art will understand that Figure 1 The application scenarios shown are merely one application scenario corresponding to the technical solution of this application, and do not constitute a limitation on the application scenarios of the technical solution of this application. Other application scenarios may include more than one application scenario. Figure 1 The number of more or fewer electronic devices shown, or the network connectivity of electronic devices, for example Figure 1 Only one electronic device is shown in the diagram. It is understood that the scenario of the protection device for the semiconductor device may also include one or more other electronic devices, which are not specifically limited here. The electronic device 100 may also include a memory for storing information related to the protection device of the semiconductor device.

[0042] Furthermore, in the application scenario of the semiconductor device protection device in this application embodiment, the electronic device 100 may be equipped with a display device, or the electronic device 100 may not have a display device but may be communicatively connected to an external display device 200. The display device 200 is used to output the execution result of the semiconductor device protection device in the electronic device. The electronic device 100 can access a background database 300, which may be the local storage of the electronic device 100 or may be located in the cloud. The background database 300 stores information related to the semiconductor device protection device.

[0043] It should be noted that, Figure 1 The application scenario of the semiconductor device protection device shown is merely an example. The application scenario of the semiconductor device protection device described in the embodiments of this application is to more clearly illustrate the technical solution of the embodiments of this application, and does not constitute a limitation on the technical solution provided in the embodiments of this application.

[0044] Based on the application scenarios of the protection devices for semiconductor devices mentioned above, embodiments of the protection devices for semiconductor devices are proposed.

[0045] Firstly, such as Figure 2 As shown, in one embodiment, this application provides a method for protecting a semiconductor device, which includes steps S10-S30, and will be described in detail below.

[0046] Step S10: Acquire the spatial magnetic field signal of the semiconductor device.

[0047] Step S20: Obtain the junction temperature signal of the semiconductor device.

[0048] As an example, the junction temperature signal of a semiconductor device reflects the temperature of the junction region inside the device. During operation, electron migration and current flow within the semiconductor device generate heat, causing the junction temperature to rise. If the junction temperature is too high, it will cause changes in the electrical performance parameters of the semiconductor device, such as threshold voltage drift and decreased carrier mobility, thus affecting the electrical performance of the device. Under different junction temperature signals, the current of the semiconductor device will also be affected accordingly. Therefore, by obtaining the junction temperature signal, the current distribution of the semiconductor device can be made closer to the actual situation.

[0049] Step S30: Control the semiconductor device to turn off based on the space magnetic field signal and the junction temperature signal.

[0050] In the above implementation, firstly, the spatial magnetic field signal of the semiconductor device is acquired. This signal reflects the current distribution within the semiconductor device, thus revealing the state of the internal current. Secondly, the junction temperature signal of the semiconductor device is acquired, reflecting its actual temperature condition. Finally, the semiconductor device is turned off based on both the spatial magnetic field signal and the junction temperature signal. Since there is a correlation between the temperature and current of the semiconductor device, the junction temperature signal can be used to optimize the current deviation caused by temperature. Thus, combining the spatial magnetic field signal reflecting the current distribution of the semiconductor device with the junction temperature signal reflecting its junction temperature condition can, to some extent, avoid the limitations of relying solely on single-point measured current as a protection criterion, thereby improving the accuracy of semiconductor device protection.

[0051] Reference Figure 3 As one implementation of step S30, step S30 may include steps S31-S32, which will be described in detail below.

[0052] Step S31: Obtain the current estimate of the semiconductor device based on the space magnetic field signal and junction temperature signal.

[0053] As an example, the spatial magnetic field signal can be obtained using a tunnel magnetoresistive array (TMA) sensor. The TMA sensor's voltage output is obtained by calculating the total magnetic field strength, bias voltage, and sensitivity. This voltage output then provides the spatial magnetic field signal characterizing the magnetic field gradient. Next, spatial differentiation is performed on the spatial magnetic field signal to obtain the current density. Based on the actual array arrangement of the TMA sensor, for example, the sensing units can be arranged at multiple key points on the semiconductor device, such as the four corner points, four edge points, and the center point. Based on the current density, weight, and area of ​​each key point, the contribution of each key point to the current is obtained, thus yielding the sub-current value for the region corresponding to the TMA sensor. Finally, based on the region corresponding to the TMA sensor and the total area of ​​the semiconductor device, a current estimate is obtained.

[0054] Step S32: Obtain the current change rate of the semiconductor device based on the spatial magnetic field signal.

[0055] As an example, when the current in a semiconductor device changes over time, the surrounding magnetic field also changes accordingly. Since the magnetic field strength is directly proportional to the current magnitude, the rate of change of current directly leads to the rate of change of magnetic field strength; the faster the current changes, the faster the corresponding magnetic field strength changes. Therefore, the rate of change of current can be obtained from the rate of change of the spatial magnetic field signal and a calibration coefficient. The rate of change of current can be expressed as: di / dt = ΔB / Δt × calibration coefficient; where Δt is a preset unit time, and ΔB is the change in the spatial magnetic field signal within the preset unit time. The calibration coefficient is used to establish a quantitative relationship between the rate of change of the spatial magnetic field signal and the rate of change of current, and can be measured in advance through experiments.

[0056] Step S33: Obtain the dynamic current threshold based on the junction temperature signal.

[0057] As an example, the junction temperature signal can directly reflect the internal heating status of a semiconductor device. As the junction temperature signal increases, the semiconductor device's current tolerance decreases. For instance, a higher current can be allowed to flow through the semiconductor device when the junction temperature signal is low, so as to fully utilize the performance of the semiconductor device; while as the junction temperature signal gradually increases, the dynamic current threshold can be gradually reduced to prevent the semiconductor device from overheating due to overcurrent, thus achieving precise protection for the semiconductor device.

[0058] Step S34: Compare the current change rate with a preset change rate threshold, compare the current estimate with a dynamic current threshold, and control the semiconductor device to soft turn off or hard turn off based on the comparison results.

[0059] As an example, soft shutdown gradually reduces the control voltage of a semiconductor device, allowing the current in the device to smoothly decrease to zero. This avoids spikes caused by sudden current and voltage changes that could affect the semiconductor device and its surrounding circuitry. Hard shutdown, on the other hand, rapidly cuts off the control voltage of the semiconductor device, immediately stopping its operation. While this increases the turn-off speed and is suitable for emergency situations, the sudden current changes can cause significant surges, potentially impacting the device's lifespan. Targeted use of soft and hard shutdown protection measures in different situations can effectively protect the device while extending its lifespan.

[0060] In the above embodiments, the current change rate of the semiconductor device is obtained using a spatial magnetic field signal, and a dynamic current threshold is obtained based on the junction temperature signal, enabling the setting of a reasonable current threshold at different junction temperatures of the semiconductor device. The current change rate is compared with a preset change rate threshold, and the estimated current value is compared with the dynamic current threshold. Based on the comparison results, the semiconductor device is controlled to either softly or hardly turn off. The entire process only requires acquiring spatial magnetic field signals and junction temperature signals, and can implement soft or hard shutdown of the semiconductor device for different situations, thereby improving the accuracy of semiconductor device protection.

[0061] In some embodiments, step S34 may include steps S341-S343, which will be described in detail below.

[0062] Step S341: Obtain the soft turn-off threshold and hard turn-off threshold of the semiconducting device based on the dynamic current threshold.

[0063] The hard turn-off threshold is greater than the soft turn-off threshold. For example, the hard turn-off threshold can be a first adjustment factor multiplied by the dynamic current threshold corresponding to the current junction temperature signal, and the soft turn-off threshold can be a second adjustment factor multiplied by the dynamic current threshold corresponding to the current junction temperature signal. The first adjustment factor is greater than the second adjustment factor so that, when both the hard and soft turn-off thresholds can be dynamically adjusted, the hard turn-off threshold is always greater than the soft turn-off threshold. For example, the first adjustment factor can be 1.05, and the second adjustment factor can be 1.

[0064] Step S342: If the comparison result is that the current change rate is greater than the preset change rate threshold and the current estimate is greater than the hard turn-off threshold, then within the first preset time period, the control electrode voltage of the semiconductor device is adjusted to the cutoff voltage range of the semiconductor device so as to hard turn off the semiconductor device.

[0065] As an example, taking an N-type transistor as the semiconductor device, the voltage controlling the semiconductor device to turn on is 15V. When the comparison result shows that the rate of change of current is greater than a preset rate of change threshold, and the estimated current value is greater than the hard turn-off threshold, it indicates that the current overcurrent situation of the semiconductor device is relatively serious, and the semiconductor device needs to be quickly turned off within a first preset time period. For example, the first preset time period can be 350ns. Within the first preset time period, the control electrode voltage of the semiconductor device is reduced from 15V to 0V, thereby achieving hard turn-off.

[0066] Step S343: If the comparison result is that the current change rate is less than or equal to a preset change rate threshold, or the current estimate is less than or equal to a hard turn-off threshold, then the current estimate is compared with a soft turn-off threshold. If the current estimate is greater than the soft turn-off threshold, then within a second preset time period, the control electrode voltage of the semiconductor device is adjusted to the cutoff voltage range of the semiconductor device to achieve soft turn-off of the semiconductor device. The first preset time period is shorter than the second preset time period.

[0067] As an example, if either the current change rate is less than or equal to a preset change rate threshold or the estimated current value is less than or equal to a hard turn-off threshold, then the semiconductor device may be experiencing an overcurrent situation. In this case, the relationship between the estimated current value and the soft turn-off threshold is further evaluated. If the estimated current value is greater than the soft turn-off threshold, it indicates that the semiconductor device is experiencing a certain degree of overcurrent, but the current change rate is not continuously increasing. In this case, it is not necessary to perform a rapid hard turn-off on the semiconductor device. Instead, a soft turn-off method is used to control the turn-off of the semiconductor device to reduce the impact on the lifespan of the semiconductor device.

[0068] In the above implementation, dynamically changing soft-turn-off thresholds and hard-turn-off thresholds are first obtained based on dynamic current thresholds, ensuring that the hard-turn-off threshold is always greater than the soft-turn-off threshold. When the rate of change of current exceeds a preset rate of change threshold and the estimated current value exceeds the hard-turn-off threshold, it indicates a severe overcurrent. Hard-turn-off is achieved by adjusting the control electrode voltage to the cutoff range within a shorter first preset time period, quickly stopping the dangerous overcurrent situation in the semiconductor device. If no dangerous overcurrent situation is identified during hard-turn-off, the estimated current value is compared with the soft-turn-off threshold. If the estimated current value is greater than the soft-turn-off threshold, soft-turn-off is performed on the semiconductor device within a longer second preset time period. In this way, corresponding measures can be taken according to different overcurrent conditions, improving the accuracy of semiconductor device protection.

[0069] Reference Figure 4 In some embodiments, step S342 may include steps S3421-S3424, which will be described in detail below.

[0070] Step S3421: Obtain the current delay coefficient and the temperature delay coefficient based on the current estimate and the junction temperature signal, respectively.

[0071] As an example, the current delay factor can be a quadratic term based on the current estimate, and the current delay factor can be expressed as (I th0 / I m ) 2 , among which, I th0 Indicates the reference threshold of a semiconductor device at a standard temperature; I m This represents the estimated current value. The temperature delay coefficient can be expressed as: Among them, T j This indicates the junction temperature signal.

[0072] Step S3422: Obtain the second preset duration based on the current delay coefficient and the temperature delay coefficient, and obtain the turn-off delay function based on the second preset duration.

[0073] As an example, the second preset duration is first obtained using the current delay coefficient and the temperature delay coefficient. The second preset duration can be expressed as: Wherein, 8μs is the preset standard duration for soft turn-off, which can be modified according to actual conditions. Then, the turn-off delay function is obtained based on the second preset duration and the supply voltage of the control electrode of the semiconductor device. The turn-off delay function can be expressed as: Where Vgs(t) represents the control electrode voltage of the semiconductor device, 15V is the initial supply voltage of the control electrode of the semiconductor device, which can be adjusted according to the actual initial supply voltage of the semiconductor device, and t represents the time variable. Thus, the turn-off delay function that causes the control electrode voltage of the semiconductor device to gradually decrease over time within the second preset duration is obtained.

[0074] Thus, the larger the current estimate, the smaller the current delay coefficient, and the higher the junction temperature signal, the smaller the temperature delay coefficient. This allows the second preset duration to be shorter when the current estimate and junction temperature signal are larger, thus achieving dynamic adjustment of the second preset duration.

[0075] Step S3423: According to the turn-off delay function, the control electrode voltage of the semiconductor device is gradually adjusted to the cut-off voltage range within the second preset time period.

[0076] In the above embodiments, a current delay coefficient and a temperature delay coefficient are obtained based on the current estimate and the junction temperature signal, respectively, thereby obtaining a second preset duration. The second preset duration is dynamically adjusted according to the current estimate and the junction temperature signal. The smaller the current estimate and the junction temperature signal, the longer the soft shutdown can be performed. Conversely, the larger the current estimate and the junction temperature signal, the more severe the overcurrent and overtemperature situation, and the more quickly the soft shutdown needs to be performed. Thus, the required second preset duration can be adjusted according to the actual situation. In this way, the turn-off delay function is obtained using the second preset duration, and the control electrode voltage of the semiconductor device is gradually adjusted to the cutoff voltage range within the second preset duration according to the turn-off delay function, thereby realizing the dynamic adjustment of the soft shutdown duration.

[0077] In some embodiments, step S33 may include steps S331-S334, which will be described in detail below.

[0078] Step S331: Obtain the reference threshold of the semiconductor device at a standard temperature.

[0079] As an example, the reference threshold for a semiconductor device at a standard temperature can be found in the chip datasheet; for example, the standard temperature could be 25 degrees Celsius.

[0080] Step S332: Obtain the linear compensation parameters based on the standard temperature, junction temperature signal, and preset linear coefficient.

[0081] Step S333: Obtain the second-order compensation parameters based on the standard temperature, junction temperature signal, and preset second-order coefficients.

[0082] Step S334: Obtain the dynamic current threshold based on the reference threshold, linear compensation parameters, and second-order compensation parameters.

[0083] As an example, the dynamic current threshold can be expressed as:

[0084] ;

[0085] Among them, I th0This represents the reference threshold of the semiconductor device at standard temperature; Tj represents the junction temperature signal; α represents a preset linear coefficient, which is a first-order temperature decay coefficient used to fit the on-resistance temperature characteristics and can be adjusted according to actual conditions; β represents a preset second-order coefficient, which is a second-order nonlinearity compensation coefficient used to correct for high-temperature mobility decay and can be adjusted according to actual conditions. For example, α can be 0.0018 / ℃, and β can be 8e -6 / ℃ 2 .in, Indicates the linear compensation parameter; This represents the second-order compensation parameter.

[0086] In some embodiments, if the junction temperature signal is greater than a preset junction temperature threshold, the cooling device for cooling the semiconductor device is activated, the semiconductor device is controlled to reduce its operating frequency, and some semiconductor devices are controlled to shut down.

[0087] As an example, since the effects on semiconductor devices are not only related to internal current factors but also to external environmental factors, if only the junction temperature signal is greater than the preset junction temperature threshold and no current abnormality is detected, the cooling device can be activated. The cooling device can be a fan, liquid cooling system, etc. For example, the preset junction temperature threshold can be set to 170 degrees Celsius. Then, when the junction temperature signal is greater than 170 degrees Celsius, the fan of the cooling device can be controlled to run at full speed, and when the junction temperature signal is greater than 180 degrees Celsius, the liquid cooling system can be activated, thereby achieving graded cooling of the semiconductor device.

[0088] In addition, controlling semiconductor devices to reduce their operating frequency and controlling the shutdown of some semiconductor devices can also be performed under different temperature conditions. For example, when the junction temperature signal is greater than 170 degrees Celsius, the semiconductor devices can be controlled to reduce their operating frequency by 30%, and when the junction temperature signal is greater than 180 degrees Celsius, some semiconductor devices can be controlled to shut down.

[0089] In some embodiments, if the junction temperature signal is greater than a preset junction temperature threshold, step S334 may include generating a threshold derating range based on the junction temperature signal, and adjusting a reference threshold according to the threshold derating range to obtain an optimized reference threshold. Then, a dynamic current threshold is obtained based on the optimized reference threshold, linear compensation parameters, and second-order compensation parameters.

[0090] Taking a preset junction temperature threshold of 170 degrees Celsius as an example, the threshold derating can be expressed as follows: When the junction temperature signal is less than or equal to the preset junction temperature threshold, the threshold derating is zero, and the dynamic current threshold is not adjusted. The optimized reference threshold can be expressed as:

[0091] ;

[0092] Among them, I th0This represents the reference threshold of a semiconductor device at a standard temperature; ΔT 170 This indicates the threshold derating range. Then, based on the optimized baseline threshold, linear compensation parameters, and second-order compensation parameters, the dynamic current threshold is obtained. The specific process of obtaining the dynamic current threshold based on the optimized baseline threshold, linear compensation parameters, and second-order compensation parameters is the same as the method of obtaining the dynamic current threshold based on the baseline threshold, linear compensation parameters, and second-order compensation parameters in step S334, and will not be repeated here.

[0093] As an example, an increase in junction temperature alters the material properties of semiconductor devices, such as reducing carrier mobility and increasing leakage current, thus affecting device performance. If the dynamic current threshold is too high, the current flowing through the semiconductor device will generate even more heat, exacerbating the junction temperature rise and creating a vicious cycle. Lowering the dynamic current threshold limits the current flowing through the semiconductor device, reducing power consumption and heat generation, and preventing the junction temperature from continuously rising. Therefore, when the junction temperature signal already exceeds the preset junction temperature threshold, appropriately lowering the dynamic current threshold allows for more reasonable adjustments and appropriate shutdown measures.

[0094] In some embodiments, the method for protecting semiconductor devices further includes steps S40-S50, which will be described in detail below.

[0095] Step S40: Obtain the bonding magnetic field signal at the bonding line in the semiconductor device.

[0096] Step S50: Generate bonding wire health monitoring parameters based on bonding magnetic field signals, and control the dynamic current threshold to decrease by a preset ratio based on the health monitoring parameters, or control the bonding points to be isolated.

[0097] The health monitoring parameters can be expressed as follows:

[0098] Among them, B z,k B is the currently measured bonding magnetic field signal. z0,k This is the initial calibration value.

[0099] As an example, when the health monitoring parameter is less than the first health threshold, for example, the first health threshold could be 0.8, the dynamic current threshold can be controlled to decrease by a preset percentage, for example, the dynamic current threshold can be controlled to decrease by 10%. When the health monitoring parameter is less than the second health threshold, for example, the second health threshold could be 0.7, the bonding points on the bonding line can be isolated.

[0100] Reference Figure 5 Secondly, in one embodiment, this application provides a protection device for a semiconductor device, which includes a first magnetic acquisition module 10, a temperature acquisition module 20, and a processing module 30. Wherein,

[0101] The first magnetic acquisition module 10 is used to acquire the spatial magnetic field signal of the semiconductor device, and the temperature acquisition module 20 is used to acquire the junction temperature signal of the semiconductor device. The processing module 30 is connected to the first magnetic acquisition module 10 and the temperature acquisition module 20, and controls the semiconductor device to shut down based on the spatial magnetic field signal and the junction temperature signal.

[0102] In the above embodiment, firstly, the spatial magnetic field signal of the semiconductor device is acquired by the first magnetic acquisition module 10. The spatial magnetic field signal can reflect the current distribution of the semiconductor device, thus presenting the state of the internal current of the semiconductor device. Secondly, the junction temperature signal of the semiconductor device is acquired by the temperature acquisition module 20. The junction temperature signal can reflect the actual temperature condition of the semiconductor device. Finally, the processing module 30 controls the semiconductor device to turn off based on the spatial magnetic field signal and the junction temperature signal. Since there is a correlation between the temperature and current of the semiconductor device, the junction temperature signal can be used to optimize the current deviation of the semiconductor device caused by temperature. In this way, by combining the spatial magnetic field signal reflecting the current distribution of the semiconductor device with the junction temperature signal reflecting the junction temperature condition of the semiconductor device, the limitations of relying solely on the current measured at a single point as a protection criterion can be avoided to a certain extent, thereby improving the accuracy of semiconductor device protection.

[0103] Reference Figure 6 In some embodiments, the semiconductor device includes a bonding wire 1, an emitter metal layer 2, a composite shielding layer 3, a semiconductor layer 4, a silver-copper sintered layer 5, and a substrate 6.

[0104] The substrate 6 can be an aluminum silicon carbide (AlSiC) substrate, which has the advantages of high mechanical strength and good heat dissipation, so as to provide stable support and efficient heat dissipation for semiconductor devices.

[0105] The composite shielding layer 3 comprises a cobalt-iron-boron-magnesium oxide (CoFeB-MgO) composite film and a permalloy layer. The cobalt-iron-boron-magnesium oxide composite film is used to suppress high-frequency noise, while the permalloy layer is used to suppress low-frequency magnetic field interference. Thus, through the combined action of the cobalt-iron-boron-magnesium oxide composite film and the permalloy layer, 500kHz noise can be suppressed by up to 70dB, ensuring the accuracy of space magnetic field signal acquisition.

[0106] The silver-copper sintered layer 5 is used to connect the substrate 6, the semiconductor layer 4, and the emitter metal layer 2. As an example, a silver-copper (AgCu80) alloy with a particle size of 10 nm can be used as the sintering material to co-sinter the first magnetic acquisition module 10 with the substrate 6, which has a thermal conductivity of 240 W / mK. The sintering process, conducted at 280°C and 15 MPa pressure for 20 minutes, forms a reliable connection with an interfacial thermal resistance of only 0.8 K / W and a shear strength of 60 MPa, ensuring thermal conductivity between the first magnetic acquisition module 10 and other parts of the semiconductor device, and providing a certain degree of mechanical stability.

[0107] Reference Figure 7 In some embodiments, the bonding wire 1, the emitter metal layer 2, the composite shielding layer 3, the semiconductor layer 4, the silver-copper sintered layer 5, and the substrate 6 are arranged sequentially from top to bottom.

[0108] In some embodiments, the thickness of the cobalt-iron-boron-magnesium oxide composite film is 40 nm-60 nm, preferably 50 nm. The thickness of the permalloy layer is 180 nm-220 nm, preferably 200 nm. The thickness of the silver-copper sintered layer 5 is 15 μm-25 μm, preferably 20 μm.

[0109] Reference Figure 7 In some embodiments, the first magnetic acquisition module 10 includes a first tunneling magnetoresistive array sensor. A mounting groove 21 is formed on the emitter metal layer 2, and the first tunneling magnetoresistive array sensor is embedded in the mounting groove 21. The sensitive axis of the first tunneling magnetoresistive array sensor is parallel to the current direction of the semiconductor device.

[0110] In the above embodiment, the sensitive axis of the first tunnel magnetoresistive array sensor is positioned parallel to the current direction (Y direction) of the semiconductor device by the mounting slot 21. Compared with the surface mount method, the sensitivity of the first tunnel magnetoresistive array sensor can be improved, increasing its sensitivity from 15mV / Oe (Z direction) to 28mV / Oe (Y direction).

[0111] In some embodiments, the mounting groove 21 is formed to a depth of 0.15 mm in the emitter metal layer 2.

[0112] In some embodiments, the first tunneling magnetoresistive array sensor includes a plurality of first sensing units arranged in an array. Each first sensing unit may be arranged in a 3×3 array or a 2×3 array. The spacing between each first sensing unit is 0.4 mm to 0.6 mm, for example, 0.5 mm. In the above embodiments, by using a plurality of arrayed first sensing units, the first tunneling magnetoresistive array sensor can fully cover the surface of the semiconductor device chip, enabling it to acquire more accurate spatial magnetic field signals, thereby more accurately reflecting the spatial distribution of current in the semiconductor device.

[0113] In some embodiments, the protection device for the semiconductor device further includes a second magnetic acquisition module 40 disposed at the bonding wire 1, for acquiring the bonding magnetic field signal of the bonding wire 1; wherein the bonding magnetic field signal is used to detect the health of the bonding wire 1.

[0114] The bonding line 1 includes any one of the emitter bonding line, collector bonding line, and base bonding line.

[0115] Reference Figure 8 In some embodiments, the second magnetic acquisition module 40 includes a second tunneling magnetoresistive array sensor located directly below the bonding wire 1.

[0116] In some embodiments, the second tunnel magnetoresistive array sensor includes a plurality of second sensing units arranged in an array. Each second sensing unit may be arranged in a 2×2 array. The spacing between each second sensing unit is 0.4 mm to 0.6 mm. For example, the spacing between each second sensing unit is 0.5 mm, and the vertical projection distance to the bonding line 1 is between 0.2 mm and 0.4 mm.

[0117] In the above embodiments, through a plurality of arrayed second sensing units, the second tunnel magnetoresistive array sensor can perform single-point measurement on the bonding points in the bonding wire 1, enabling it to acquire more accurate bonding magnetic field signals, thereby acquiring the current of key connection points in the semiconductor device, so as to realize the aging monitoring of the bonding wire 1 and the current abnormality caused by the loose connection of the bonding wire 1.

[0118] As an example, the control module includes a current generation unit, a rate of change generation unit, a threshold generation unit, and a shutdown execution unit.

[0119] The current generation unit is used to obtain the current estimate of the semiconductor device based on the space magnetic field signal and the junction temperature signal.

[0120] The rate of change generation unit is used to obtain the rate of change of current of the semiconductor device based on the spatial magnetic field signal;

[0121] The threshold generation unit is used to obtain a dynamic current threshold based on the junction temperature signal;

[0122] The shutdown execution unit is used to compare the current change rate with a preset change rate threshold, compare the current estimate with the dynamic current threshold, and control the semiconductor device to soft or hard shut down based on the comparison result.

[0123] It should be noted that the current generation unit, rate of change generation unit, threshold generation unit, and shutdown execution unit of the processing module are used to execute steps S31-S34 of the protection method for the semiconductor device, respectively, and will not be described in detail here.

[0124] Thirdly, in one embodiment, this application provides an electronic device, such as... Figure 9 As shown, it illustrates the structure of the electronic device involved in this application, specifically:

[0125] The electronic device may include components such as a processor 401 with one or more processing cores, a memory 402 with one or more computer-readable storage media, a power supply 403, and an input unit 404. Those skilled in the art will understand that... Figure 9 The structure of the electronic device shown does not constitute a limitation on the electronic device and may include more or fewer components than shown, or combine certain components, or have different component arrangements. Wherein:

[0126] The processor 401 is the control center of the electronic device. It connects various parts of the electronic device via various interfaces and lines. By running or executing software programs and / or modules stored in the memory 402, and by calling data stored in the memory 402, it performs various functions and processes data, thereby providing overall monitoring of the electronic device. Optionally, the processor 401 may include one or more processing cores; preferably, the processor 401 may integrate an application processor and a modem processor, wherein the application processor mainly handles the operating system, user interface, and computer programs, and the modem processor mainly handles wireless communication. It is understood that the modem processor may not be integrated into the processor 401.

[0127] The memory 402 can be used to store software programs and modules. The processor 401 executes various functional applications and data processing by running the software programs and modules stored in the memory 402. The memory 402 may mainly include a program storage area and a data storage area. The program storage area may store the operating system, computer programs required for at least one function (such as sound playback function, image playback function, etc.), etc.; the data storage area may store data created according to the use of the server, etc. In addition, the memory 402 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, or other volatile solid-state storage device. Accordingly, the memory 402 may also include a memory controller to provide the processor 401 with access to the memory 402.

[0128] The electronic device also includes a power supply 403 that supplies power to the various components. Preferably, the power supply 403 can be logically connected to the processor 401 through a power management system, thereby enabling functions such as charging, discharging, and power consumption management through the power management system. The power supply 403 may also include one or more DC or AC power supplies, recharging systems, power fault detection circuits, power converters or inverters, power status indicators, and other arbitrary components.

[0129] The electronic device may also include an input unit 404, which can be used to receive input digital or character information, and generate keyboard, mouse, joystick, optical or trackball signal inputs related to user settings and function control.

[0130] Although not shown, the electronic device may also include a display unit, etc., which will not be described in detail here. Specifically, in this embodiment, when the electronic device is a model training electronic device, the processor 401 in the electronic device will load the executable files corresponding to the processes of one or more computer programs into the memory 402 according to the following instructions, and the processor 401 will run the computer programs stored in the memory 402 to perform the steps of the above method.

[0131] Those skilled in the art will understand that all or part of the steps in any of the methods in the above embodiments can be performed by a computer program or by a computer program controlling related hardware. The computer program can be stored in a computer-readable storage medium and loaded and executed by a processor.

[0132] Fourthly, in one embodiment, this application provides a storage medium storing a plurality of computer programs that can be loaded by a processor to perform the steps of the above-described method.

[0133] It will be understood by those skilled in the art that any references to memory, storage, database, or other media used in the embodiments provided in this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), Synchlink, DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and RAMbus dynamic RAM (RDRAM), etc.

[0134] Since the computer program stored in the storage medium can execute the steps in the protection device of the semiconductor device in any embodiment of the present application, the beneficial effects that the protection device of the semiconductor device in any embodiment of the present application can achieve can be realized. For details, please refer to the previous embodiments, which will not be repeated here.

[0135] For details on the implementation of each of the above operations, please refer to the previous examples, which will not be repeated here.

[0136] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the detailed descriptions of other embodiments above, which will not be repeated here.

[0137] The above provides a detailed description of a protection device for a semiconductor device provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0138] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Claims

1. A protection device for a semiconductor device, characterized in that, include: The first magnetic acquisition module (10) is used to acquire the spatial magnetic field signal of the semiconductor device. Temperature acquisition module (20) is used to acquire the junction temperature signal of the semiconductor device; The processing module (30) is connected to the first magnetic acquisition module (10) and the temperature acquisition module (20), and controls the semiconductor device to shut down according to the space magnetic field signal and the junction temperature signal.

2. The protection device for a semiconductor device according to claim 1, characterized in that, The semiconductor device includes a bonding wire (1), an emitter metal layer (2), a composite shielding layer (3), a semiconductor layer (4), a silver-copper sintered layer (5), and a substrate (6). The composite shielding layer (3) includes a cobalt-iron-boron-magnesium oxide composite film and a permalloy layer; the cobalt-iron-boron-magnesium oxide composite film is used to suppress high-frequency noise, and the permalloy layer is used to suppress low-frequency magnetic field interference. The silver-copper sintered layer (5) is used to connect the substrate (6), the semiconductor layer (4) and the emitter metal layer (2).

3. The protection device for a semiconductor device according to claim 2, characterized in that, The bonding wire (1), the emitter metal layer (2), the composite shielding layer (3), the semiconductor layer (4), the silver-copper sintered layer (5), and the substrate (6) are arranged from top to bottom.

4. The protection device for a semiconductor device according to claim 2, characterized in that, The thickness of the cobalt-iron-boron-magnesium oxide composite film is 40nm-60nm, the thickness of the permalloy layer is 180nm-220nm, and the thickness of the silver-copper sintered layer (5) is 15μm-25μm.

5. The protection device for a semiconductor device according to claim 2, characterized in that, The first magnetic acquisition module (10) includes a first tunnel magnetoresistive array sensor; An installation groove (21) is provided on the emitter metal layer (2), and the first tunnel magnetoresistive array sensor is embedded in the installation groove (21). The sensitive axis of the first tunnel magnetoresistive array sensor is parallel to the current direction of the semiconductor device.

6. The protection device for a semiconductor device according to claim 5, characterized in that, The mounting groove (21) is opened to a depth of 0.15 mm on the emitter metal layer (2).

7. The protection device for a semiconductor device according to claim 5, characterized in that, The first tunnel magnetoresistive array sensor includes several first sensing units arranged in an array. The spacing between each of the first sensing units is 0.4 mm to 0.6 mm.

8. The protection device for a semiconductor device according to claim 2, characterized in that, It also includes a second magnetic acquisition module (40) disposed at the bonding wire (1) for acquiring the bonding magnetic field signal of the bonding wire (1); wherein the bonding magnetic field signal is used to detect the health of the bonding wire (1); The bonding line (1) includes any one of the emitter bonding line, collector bonding line and base bonding line.

9. The protection device for a semiconductor device according to claim 8, characterized in that, The second magnetic acquisition module (40) includes a second tunnel magnetoresistive array sensor, which is located directly below the bonding wire (1).

10. The protection device for a semiconductor device according to claim 9, characterized in that, The second tunnel magnetoresistive array sensor includes several arrayed second sensing units, with a spacing of 0.4 mm to 0.6 mm between each second sensing unit and a vertical projection distance of 0.2 mm to 0.4 mm from the bonding line (1).

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