Modular igbt driver circuit board

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By using modular design and optimizing the signal transmission path, the problems of signal delay and inflexible protection functions in IGBT drive circuits were solved, enabling rapid response and efficient equipment upgrades, and improving the switching speed and reliability of the equipment.

CN224503219UActive Publication Date: 2026-07-14CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Utility models(China)
Current Assignee / Owner: CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
Filing Date: 2025-08-06
Publication Date: 2026-07-14

AI Technical Summary

Technical Problem

Existing IGBT driver circuits are complex in design, have high signal delay, are susceptible to parasitic inductance interference, and their protection functions are deeply tied to the core driver hardware, making flexible expansion difficult. The driver power supply and signal processing unit are also scattered, resulting in low efficiency in equipment upgrades.

Method used

The modular design integrates the driver chip, high-speed signal processing chip, isolation transformer and high-frequency rectifier on the driver board, optimizes the signal transmission path, and has a built-in dynamic protection mechanism. It achieves fast response and soft shutdown through real-time voltage monitoring and gate charge discharge technology.

Benefits of technology

It significantly improves switching speed, reduces turn-on and turn-off time, enhances equipment flexibility and reliability, and reduces equipment maintenance costs and downtime.

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Abstract

This utility model discloses a modular IGBT driver circuit board, including a high-speed signal processing circuit, an isolation circuit, a driver circuit, and a baseboard circuit. The high-speed signal processing circuit, isolation circuit, and baseboard circuit are respectively connected to the driver circuit. The high-speed signal processing circuit, isolation circuit, and driver circuit are integrated on the driver board. A PIN output bar is installed on the lower end face of the driver board. The baseboard circuit is integrated on the baseboard, and a connector corresponding to the PIN output bar is installed on the baseboard. The driver chip, high-speed signal processing chip, isolation transformer, and high-frequency rectifier are modularized. By optimizing the signal transmission path, the turn-on and turn-off times are compressed to less than 10ns, significantly improving the switching speed. At the same time, the driver core has a built-in dynamic protection mechanism: when an undervoltage is detected, a real-time voltage monitoring circuit immediately triggers hardware latching, and soft turn-off is achieved through graded gate charge discharge technology, effectively suppressing voltage spikes from damaging the IGBT.

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Description

Technical Field

[0001] This utility model relates to a modular IGBT driver circuit board. Background Technology

[0002] Currently, IGBT driver circuits are typically designed with customization for specific modules, requiring redesigned driver systems for IGBT modules of different voltage levels or package types. Traditional solutions have significant limitations: the drive signal suffers from high delay due to long circuit paths and is susceptible to parasitic inductance interference; protection functions (such as undervoltage and overcurrent protection) are deeply tied to the core driver hardware, hindering flexible expansion; and the dispersed layout of the drive power supply and signal processing units not only occupies a large space but also incurs high maintenance costs. Furthermore, the fixed interface between the driver circuit and the IGBT module necessitates a complete hardware overhaul when replacing the module, severely limiting equipment upgrade efficiency. Therefore, there is an urgent need for a driver solution that combines fast response, multiple protections, and modular adaptability to meet the dual demands of flexibility and reliability in industrial applications. Summary of the Invention

[0003] The purpose of this invention is to address the problems of complex structure and high delay of existing drive circuits by optimizing the signal transmission path and significantly improving the switching speed.

[0004] The technical solution of this utility model:

[0005] A modular IGBT driver circuit board includes a high-speed signal processing circuit, an isolation circuit, a driver circuit, and a baseboard circuit. The high-speed signal processing circuit, the isolation circuit, and the baseboard circuit are respectively connected to the driver circuit. The high-speed signal processing circuit, the isolation circuit, and the driver circuit are integrated on the driver board. A PIN output bar is installed on the lower end face of the driver board. The baseboard circuit is integrated on the baseboard, and a connector corresponding to the PIN output bar is installed on the baseboard.

[0006] The high-speed signal processing circuit includes a pulse width modulation chip. Pin 1 of the pulse width modulation chip is connected to resistor R27. The other end of resistor R27 is connected to pin 9 of the pulse width modulation chip and capacitor C13, which is grounded. Pin 2 is the input reference voltage REF. Pins 3, 4, 5, 6, and 8 are grounded through resistors R19, R20, C11, R22, and C12, respectively. Pin 7 is connected to pin 6 through resistor R24. Pin 16 outputs the reference voltage REF through resistor R21. Pin 15 is connected to the power supply VCC. Pins 14 and 11 are connected to the isolation circuit. Pin 12 is grounded. Pin 10 is grounded through resistor R26. Pins 13 and 16 are grounded through capacitor C22.

[0007] The isolation circuit includes an operational amplifier U8. Pins 2 and 4 of operational amplifier U8 are connected to pins 14 and 11 of the pulse width modulation chip, respectively. Pin 3 is grounded, pin 6 is connected to the power supply VCC_15V, and pins 7 and 8 are connected to resistors R29 and R31, respectively. Resistor R29 is connected to the gate of MOSFET Q1 and grounded through resistor R32. The drain of MOSFET Q1 is connected to pin 1 of the toroidal transformer T, and its source is grounded. Resistor R31 is connected to the gate of MOSFET Q2 and grounded through resistor R33. The source of the MOSFET is grounded, and its drain is connected to pin 4 of the toroidal transformer T.

[0008] Pins 2 and 3 of the toroidal transformer T are connected to the VDC power supply, and pins 8 and 7, and pins 6 and 5 are connected to one side of the first rectifier bridge and the second rectifier bridge, respectively.

[0009] The other side of the first rectifier bridge is connected to the cathode of diode D5 and one end of resistor R28. The other end of resistor R28 is connected to the anode of diode D5, the base of transistor Q3, and one end of capacitor C20. The cathode of diode D5, the other end of capacitor C20, and capacitor C14 are connected to power supply VCC_ISO1. Resistor R28, collector of transistor Q3, and capacitor C15 are connected to power supply VEE_ISO1. The emitter of transistor Q3, capacitor C14, and capacitor C15 are connected to ground node GND_ISO1.

[0010] The other side of the second rectifier bridge is connected to the cathode of diode D10 and one end of resistor R30. The other end of resistor R30 is connected to the anode of diode D10, the base of transistor Q4, and one end of capacitor C21. The cathode of diode D10, the other end of capacitor C21, and capacitor C16 are connected to power supply VCC_ISO2. Resistor R30, collector of transistor Q4, and capacitor C17 are connected to power supply VEE_ISO2. The emitter of transistor Q4, capacitor C16, and capacitor C17 are connected to ground node GND_ISO2.

[0011] The driving circuit includes an isolated gate driver U5. Pins 1, 5, 6, and 8 of the isolated gate driver U5 are connected to power supply VEE_ISO1, power supply VCC_ISO1, ground node GND_ISO1, and power supply VEE_ISO1, respectively. Pins 2, 3, 4, and 7 are connected to the baseboard circuit. Pins 9, 10, and 12 are grounded. Pin 11 is connected to power supply VCC_15V. Pin 13 is connected to the fault handling signal UVLOL. Pin 14 outputs the fault signal FAULTL. Pins 13 and 14 are connected to power supply VCC through resistors and grounded through resistors. Pin 15 is connected to the drive signal DRVL through resistor R17 and grounded through resistor R15.

[0012] The baseboard circuit includes Zener diodes D15, D16, D17, and D18 connected in forward direction in sequence. The cathode of Zener diode D18 is connected to the cathode of Zener diode D20 and connected to the signal output point C1. The anode of Zener diode D20 is connected to the cathode of Zener diode D19. The anode of Zener diode D19 is connected to resistor R5. Resistor R5 is connected to pin 7 of isolated gate driver U5 and grounded through diode D22 and capacitor C23.

[0013] The anode of the Zener diode D15 is connected to the anode of the diode D21, and the cathode of the diode D21 is connected to the G1 signal output point. The G1 signal output point is also connected to pins 3 and 4 of the isolated gate driver U5 through driving resistors. The G1 signal output point is also connected to the power supply VCC_ISO1 through diode D23, and grounded through a parallel bidirectional diode D24, resistor R6, and capacitor C24.

[0014] The beneficial effects of this utility model are:

[0015] By modularizing the driver chip, high-speed signal processing chip, isolation transformer, and high-frequency rectifier, and optimizing the signal transmission path, the turn-on and turn-off times are compressed to below 10ns, significantly improving the switching speed. Simultaneously, the driver core incorporates a dynamic protection mechanism: utilizing a real-time voltage monitoring circuit, it immediately triggers hardware latching upon detecting undervoltage, and achieves soft turn-off through graded gate charge discharge technology, effectively suppressing voltage spikes that could damage the IGBT. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the front structure of the driver board.

[0017] Figure 2 This is a schematic diagram of the back structure of the driver board.

[0018] Figure 3 This is a schematic diagram of a high-speed signal processing circuit.

[0019] Figure 4 This is a schematic diagram of an isolation circuit.

[0020] Figure 5 This is a schematic diagram of the drive circuit.

[0021] Figure 6 This is a schematic diagram of the baseboard circuit.

[0022] Figure 7 This is a schematic diagram of the assembly structure of the drive board and the base plate.

[0023] Figure 8 This is a graph showing the turn-off time data of the driver circuit board.

[0024] Figure 9 This is a graph showing the rise time data of the drive circuit.

[0025] Figure 10 This is a data graph of the soft-turn-off time of the drive circuit.

[0026] Attached label: 1-Driver board, 2-Transformer, 3-PIN output bar, 4-MOSFET, 5-Heat dissipation hole, 6-Base plate, 7-External connector, 8-Chip. Detailed Implementation

[0027] Example 1:

[0028] like Figure 1 As shown, a modular IGBT driver circuit board includes a high-speed signal processing circuit, an isolation circuit, a driver circuit, and a baseboard circuit. The high-speed signal processing circuit, isolation circuit, and baseboard circuit are connected to the driver circuit and are integrated on a driver board. A PIN output bar is mounted on the lower surface of the driver board, and the baseboard circuit is integrated on the baseboard, which has connectors corresponding to the PIN output bar. The driver baseboard acts as an adapter layer, employing a standardized interface design (PIN pin interface) and integrating anti-backflashover and gate charge discharge circuits. By adjusting the parameters of the driver baseboard (such as matching the input capacitors of different IGBTs), the same driver core can adapt to a full range of modules from 1200V to 6500V, solving the compatibility problem of the traditional "one module, one driver" solution. The driver core and driver baseboard are combined by soldering or plugging, ensuring signal integrity while requiring only the replacement of a single component during maintenance, significantly reducing equipment downtime. Figure 7 As shown, a multi-layer PCB design is employed, embedding an electromagnetic shielding layer and a heat-dissipating metal substrate, which improves electromagnetic compatibility by more than 60% and reduces thermal resistance to 0.5℃ / W. This design is particularly suitable for applications with stringent space and reliability requirements, such as new energy inverters and rail transit converters.

[0029] like Figure 3 As shown, the high-speed signal processing circuit includes a pulse width modulation chip. Pin 1 of the pulse width modulation chip is connected to resistor R27. The other end of resistor R27 is connected to pin 9 of the pulse width modulation chip and capacitor C13, which is grounded. Pin 2 inputs the reference voltage REF. Pins 3, 4, 5, 6, and 8 are grounded through resistors R19, R20, C11, R22, and C12, respectively. Pin 7 is connected to pin 6 through resistor R24. Pin 16 outputs the reference voltage REF through resistor R21. Pin 15 is connected to the power supply VCC. Pins 14 and 11 are connected to the isolation circuit. Pin 12 is grounded. Pin 10 is grounded through resistor R26. Pins 13 and 16 are grounded through capacitor C22.

[0030] like Figure 4 As shown, the isolation circuit includes operational amplifier U8. Pins 2 and 4 of operational amplifier U8 are connected to pins 14 and 11 of the pulse width modulation chip, respectively. Pin 3 is grounded, pin 6 is connected to power supply VCC_15V, and pins 7 and 8 are connected to resistors R29 and R31, respectively. Resistor R29 is connected to the gate of MOSFET Q1 and grounded through resistor R32. The drain of MOSFET Q1 is connected to pin 1 of the toroidal transformer T, and its source is grounded. Resistor R31 is connected to the gate of MOSFET Q2 and grounded through resistor R33. The source of the MOSFET is grounded, and its drain is connected to pin 4 of the toroidal transformer T.

[0031] Pins 2 and 3 of the toroidal transformer T are connected to the VDC power supply, and pins 8 and 7, and pins 6 and 5 are connected to one side of the first rectifier bridge and the second rectifier bridge, respectively.

[0032] The other side of the first rectifier bridge is connected to the cathode of diode D5 and one end of resistor R28. The other end of resistor R28 is connected to the anode of diode D5, the base of transistor Q3, and one end of capacitor C20. The cathode of diode D5, the other end of capacitor C20, and capacitor C14 are connected to power supply VCC_ISO1. Resistor R28, collector of transistor Q3, and capacitor C15 are connected to power supply VEE_ISO1. The emitter of transistor Q3, capacitor C14, and capacitor C15 are connected to ground node GND_ISO1.

[0033] The other side of the second rectifier bridge is connected to the cathode of diode D10 and one end of resistor R30. The other end of resistor R30 is connected to the anode of diode D10, the base of transistor Q4, and one end of capacitor C21. The cathode of diode D10, the other end of capacitor C21, and capacitor C16 are connected to power supply VCC_ISO2. Resistor R30, collector of transistor Q4, and capacitor C17 are connected to power supply VEE_ISO2. The emitter of transistor Q4, capacitor C16, and capacitor C17 are connected to ground node GND_ISO2.

[0034] like Figure 5 As shown, the driving circuit includes an isolated gate driver U5. Pins 1, 5, 6, and 8 of the isolated gate driver U5 are connected to power supply VEE_ISO1, power supply VCC_ISO1, ground node GND_ISO1, and power supply VEE_ISO1, respectively. Pins 2, 3, 4, and 7 are connected to the baseboard circuit. Pins 9, 10, and 12 are grounded. Pin 11 is connected to power supply VCC_15V. Pin 13 is connected to the fault handling signal UVLOL. Pin 14 outputs the fault signal FAULTL. Pins 13 and 14 are connected to power supply VCC through resistors and grounded through resistors. Pin 15 is connected to the drive signal DRVL through resistor R17 and grounded through resistor R15.

[0035] like Figure 6 As shown, the base circuit includes Zener diodes D15, D16, D17, and D18 connected in forward direction in sequence. The cathode of Zener diode D18 is connected to the cathode of Zener diode D20 and connected to the signal output point C1. The anode of Zener diode D20 is connected to the cathode of Zener diode D19. The anode of Zener diode D19 is connected to resistor R5. Resistor R5 is connected to pin 7 of isolated gate driver U5 and grounded through diode D22 and capacitor C23.

[0036] The anode of the Zener diode D15 is connected to the anode of the diode D21, and the cathode of the diode D21 is connected to the G1 signal output point. The G1 signal output point is also connected to pins 3 and 4 of the isolated gate driver U5 through driving resistors. The G1 signal output point is also connected to the power supply VCC_ISO1 through diode D23, and grounded through a parallel bidirectional diode D24, resistor R6, and capacitor C24.

[0037] like Figure 7 As shown, during processing, each component is first mounted on the PCB board surface according to its corresponding position. The transformer and PIN pins are soldered to the PCB board surface. Then, the matching driver base plate and driver core are soldered together using PIN pins.

Claims

1. A modular IGBT driver circuit board, characterized in that... The system includes a high-speed signal processing circuit, an isolation circuit, a driving circuit, and a baseboard circuit. The high-speed signal processing circuit, the isolation circuit, and the baseboard circuit are connected to the driving circuit. The high-speed signal processing circuit, the isolation circuit, and the driving circuit are integrated on a driving board (1). A PIN output bar (3) is installed on the lower end face of the driving board (1). The baseboard circuit is integrated on a baseboard (6). A plug bar corresponding to the PIN output bar (3) is installed on the baseboard (6).

2. The modular IGBT driver circuit board according to claim 1, characterized in that: The high-speed signal processing circuit includes a pulse width modulation chip. Pin 1 of the pulse width modulation chip is connected to resistor R27. The other end of resistor R27 is connected to pin 9 of the pulse width modulation chip and capacitor C13, which is grounded. Pin 2 is the input reference voltage REF. Pins 3, 4, 5, 6, and 8 are grounded through resistors R19, R20, C11, R22, and C12, respectively. Pin 7 is connected to pin 6 through resistor R24. Pin 16 outputs the reference voltage REF through resistor R21. Pin 15 is connected to the power supply VCC. Pins 14 and 11 are connected to the isolation circuit. Pin 12 is grounded. Pin 10 is grounded through resistor R26. Pins 13 and 16 are grounded through capacitor C22.

3. The modular IGBT driver circuit board according to claim 1, characterized in that: The isolation circuit includes an operational amplifier U8. Pins 2 and 4 of operational amplifier U8 are connected to pins 14 and 11 of the pulse width modulation chip, respectively. Pin 3 is grounded, pin 6 is connected to the power supply VCC_15V, and pins 7 and 8 are connected to resistors R29 and R31, respectively. Resistor R29 is connected to the gate of MOSFET Q1 and grounded through resistor R32. The drain of MOSFET Q1 is connected to pin 1 of the toroidal transformer T, and its source is grounded. Resistor R31 is connected to the gate of MOSFET Q2 and grounded through resistor R33. The source of the MOSFET is grounded, and its drain is connected to pin 4 of the toroidal transformer T. Pins 2 and 3 of the toroidal transformer T are connected to the VDC power supply, and pins 8 and 7, and pins 6 and 5 are connected to one side of the first rectifier bridge and the second rectifier bridge, respectively. The other side of the first rectifier bridge is connected to the cathode of diode D5 and one end of resistor R28. The other end of resistor R28 is connected to the anode of diode D5, the base of transistor Q3, and one end of capacitor C20. The cathode of diode D5, the other end of capacitor C20, and capacitor C14 are connected to power supply VCC_ISO1. Resistor R28, collector of transistor Q3, and capacitor C15 are connected to power supply VEE_ISO1. The emitter of transistor Q3, capacitor C14, and capacitor C15 are connected to ground node GND_ISO1. The other side of the second rectifier bridge is connected to the cathode of diode D10 and one end of resistor R30. The other end of resistor R30 is connected to the anode of diode D10, the base of transistor Q4, and one end of capacitor C21. The cathode of diode D10, the other end of capacitor C21, and capacitor C16 are connected to power supply VCC_ISO2. Resistor R30, collector of transistor Q4, and capacitor C17 are connected to power supply VEE_ISO2. The emitter of transistor Q4, capacitor C16, and capacitor C17 are connected to ground node GND_ISO2.

4. The modular IGBT driver circuit board according to claim 1, characterized in that: The driving circuit includes an isolated gate driver U5. Pins 1, 5, 6, and 8 of the isolated gate driver U5 are connected to power supply VEE_ISO1, power supply VCC_ISO1, ground node GND_ISO1, and power supply VEE_ISO1, respectively. Pins 2, 3, 4, and 7 are connected to the baseboard circuit. Pins 9, 10, and 12 are grounded. Pin 11 is connected to power supply VCC_15V. Pin 13 is connected to the fault handling signal UVLOL. Pin 14 outputs the fault signal FAULTL. Pins 13 and 14 are connected to power supply VCC through resistors and grounded through resistors. Pin 15 is connected to the drive signal DRVL through resistor R17 and grounded through resistor R15.

5. The modular IGBT driver circuit board according to claim 1, characterized in that: The baseboard circuit includes Zener diodes D15, D16, D17, and D18 connected in forward direction in sequence. The cathode of Zener diode D18 is connected to the cathode of Zener diode D20 and connected to the signal output point C1. The anode of Zener diode D20 is connected to the cathode of Zener diode D19. The anode of Zener diode D19 is connected to resistor R5. Resistor R5 is connected to pin 7 of isolated gate driver U5 and grounded through diode D22 and capacitor C23. The anode of the Zener diode D15 is connected to the anode of the diode D21, and the cathode of the diode D21 is connected to the G1 signal output point. The G1 signal output point is also connected to pins 3 and 4 of the isolated gate driver U5 through driving resistors. The G1 signal output point is also connected to the power supply VCC_ISO1 through diode D23, and grounded through a parallel bidirectional diode D24, resistor R6, and capacitor C24.