Annealing apparatus for preparing perovskite solar cells
By using automated equipment for slit coating, the problems of temperature inhomogeneity and solvent evaporation in the preparation of perovskite solar cells have been solved, achieving efficient crystallization of the perovskite layer and improved cell performance, thus realizing continuous production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
- Filing Date
- 2025-06-30
- Publication Date
- 2026-07-14
AI Technical Summary
In the existing technology for preparing perovskite solar cells, there are problems such as temperature inhomogeneity, inconvenient solvent evaporation, and the influence of the heating source position on crystallization quality during the annealing process. These problems make it difficult to control the crystallization quality, affect the performance of the cells, and hinder large-scale production.
An automated slot coating system is employed, comprising a feeding and conveying mechanism, a preheating table, a transfer and conveying mechanism, a translation mechanism, and a heating table. It utilizes circulating heat transfer fluid for heating, combined with a matrix chemical level and a lifting mechanism, to achieve temperature uniformity and controllability, ensuring full contact between the perovskite layer and the heating table, and precisely controlling the annealing time.
It improves the crystallization quality and production efficiency of perovskite thin films, enhances battery performance, enables continuous production, reduces pollution risks, and optimizes production cycle time.
Smart Images
Figure CN224503897U_ABST
Abstract
Description
Technical Field
[0001] This application relates to equipment for fabricating perovskite solar cells, and in particular, annealing equipment for fabricating perovskite solar cells. Background Technology
[0002] Currently, in the solution-based fabrication of perovskite solar cells, annealing is required to transform the formed wet film into a perovskite crystalline thin-film light-absorbing layer. The crystal quality of the perovskite light-absorbing layer directly affects the cell performance during annealing; therefore, annealing temperature, uniformity, and annealing method are crucial for obtaining high-quality perovskite crystalline thin films.
[0003] Proper annealing provides sufficient energy for perovskite crystal growth, increasing grain size, reducing grain boundary voids and defects, and thus reducing the recombination probability of photogenerated carriers at grain boundaries. This improves the quality of the perovskite film and consequently enhances the photoelectric conversion efficiency of the solar cell. Temperature uniformity is crucial for the crystallization quality of the perovskite film. Uniform temperature during annealing ensures consistent crystal growth, resulting in a more uniform distribution of grain size and morphology across the entire film, thereby improving the performance of the perovskite solar cell. Conversely, uneven temperature leads to uneven crystal growth, resulting in grains of varying sizes and shapes, which negatively impacts carrier transport and other performance characteristics.
[0004] Especially in the production of large-area perovskite-silicon tandem solar cells, the annealing method and time of the perovskite layer have a significant impact on the production cycle. This is reflected in the following aspects in the current production process: 1. Currently, annealing is carried out using methods such as conveyor belts or baskets to enter the annealing furnace and using hot air. This results in poor uniformity of annealing temperature, uneven heating of the perovskite cells, and difficulty in controlling the crystallization quality of the perovskite thin film, directly affecting the performance of perovskite solar cells. This is also one of the key issues preventing the large-scale mass production of perovskite cells using the solution method; 2. During the solution method for preparing the perovskite layer, the wet film formed on the sample contains solvents that need to be removed quickly, making it difficult to transport, and... Annealing is required immediately, otherwise it will affect the quality of perovskite crystallization film formation. Currently, the basket transfer method requires waiting for the basket to be full before entering the annealing furnace, which affects the quality of perovskite crystallization film formation. 3. It has been found in the laboratory that the relative position of the heating source and the wet film has a critical impact on the crystallization quality of the perovskite film. For example, inverted annealing (with the heating source closer to the surface of the wet film) can improve the quality of the perovskite film. In the actual production process, the substrate needs to be flipped so that the perovskite layer is closer to or in direct contact with the heating source. This operation is complicated to implement and also affects the process cycle. Moreover, if the perovskite layer is in contact with the heating source, the perovskite layer is easily contaminated, affecting the performance of the perovskite film. Utility Model Content
[0005] Purpose of this utility model: The purpose of this application is to provide an automated and continuous equipment for preparing the perovskite layer of perovskite solar cells using the slit coating method, so as to achieve high production efficiency and high yield.
[0006] Technical Solution: An annealing device for preparing perovskite solar cells includes a feeding and conveying mechanism, a preheating stage, a transfer mechanism, a translation mechanism, a heating stage, and a lifting mechanism. A first rotary conveyor belt is installed on the preheating stage. The feeding and conveying mechanism is connected to the inlet side of the first rotary conveyor belt. Several workstations are distributed on the heating stage in a matrix arrangement of horizontal and vertical columns. Below the heating stage, a second rotary conveyor belt is installed corresponding to each vertical column of workstations. The lifting mechanism is located below each workstation and positioned below the second rotary conveyor belt. The transfer mechanism is mounted on the translation mechanism and moves on the translation mechanism to correspond to the vertical columns of the matrix workstations. The inlet side of the transfer mechanism is connected to the outlet side of the first rotary conveyor belt, and the outlet side of the transfer mechanism is connected to the inlet side of the second rotary conveyor belt. The lifting mechanism lifts the silicon wafers on the second rotary conveyor belt to a position where they are in contact with the heating stage for annealing.
[0007] Furthermore, the rotary conveyor belts of the feeding and transfer mechanisms are belt conveyors.
[0008] Furthermore, the first rotary conveyor belt and the second rotary conveyor belt are made of tabletop paper or tabletop cloth, and both are parallel double rotary conveyor belts. The upper transmission side of the first rotary conveyor belt is in contact with the upper surface of the preheating table for transmission, and the lifting mechanism is located below the second rotary conveyor belt and between the double rotary conveyor belts.
[0009] Furthermore, the translation mechanism employs a belt or a lead screw.
[0010] Furthermore, the heating platform includes a heat-conducting plate, a heat-conducting liquid pipe, a heating tank, and a circulating pump. The heat-conducting liquid pipe is disposed within the heat-conducting plate, with its inlet connected to the outlet of the heating tank and its outlet connected to the inlet of the heating tank. The circulating pump is installed on the connecting pipe between the heat-conducting liquid pipe and the heating tank. The heating tank supplies heat-conducting liquid to the heat-conducting liquid pipe. Thermocouples are installed on the heat-conducting plate. The heating platform employs a liquid-thermal method to ensure the uniformity, stability, and controllability of the temperature over a large area of the heat-conducting plate, making the entire annealing process temperature-controlled.
[0011] Furthermore, the lifting mechanism includes a platform, a guide spring, and a drive source. The upper end of the guide spring is fixed to the lower side of the platform, and the lower end of the guide spring is fixed to the drive source. The guide spring vertically supports the silicon wafer until it contacts the surface of the heating platform for heating, ensuring full contact between the silicon wafer and the surface of the heating platform. At the same time, the spring elasticity can control the pressure of the silicon wafer contacting the surface of the heating platform, ensuring full contact without damaging the silicon wafer and perovskite layer.
[0012] Furthermore, the platform supports the silicon wafers on the second rotary conveyor belt through point, line, or surface contact.
[0013] Furthermore, the platform is a vacuum suction cup.
[0014] Beneficial effects: This application has the following advantages:
[0015] 1. The silicon wafer with a perovskite precursor wet film on its surface is first preheated to evaporate some of the solvent. The table transfer of the preheating stage can quickly evaporate most of the solvent. Then it is annealed by the heating stage, which can timely and accurately control the annealing time and temperature to ensure the uniformity of perovskite crystallization film.
[0016] 2. The heating platform adopts a liquid-thermal method, maintaining the circulation of the heat-conducting liquid, which ensures the uniformity, stability, and controllability of the temperature over a large area of the heating platform.
[0017] 3. The matrix-style processing station of the heating table works in conjunction with the lifting mechanism to bring the perovskite film into contact with the heating table and anneal it at a constant temperature. This process does not interfere with the silicon wafers being annealed at other stations, and the matrix-style processing station improves the production cycle. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of the structure of this application;
[0019] Figure 2 This is a schematic diagram of the lifting mechanism.
[0020] Figure 3 This is a schematic diagram of the heating platform structure. Detailed Implementation
[0021] The present application will be further explained below with reference to the accompanying drawings and specific embodiments.
[0022] An annealing apparatus for preparing perovskite solar cells, as shown in the attached diagram. Figure 1 As shown, it includes a feeding and conveying mechanism 1, a preheating table 2, a transfer and conveying mechanism 3, a translation mechanism 4, a heating table 5, and a lifting mechanism 6.
[0023] The feeding conveyor 1 uses a belt as a rotary conveyor, and the intermediate conveyor 3 uses a belt as a rotary conveyor. The preheating table 2 is equipped with a first rotary conveyor 7 made of tabletop paper or tabletop cloth. The first rotary conveyor 7 is configured with two parallel belts in the conveying direction. The upper conveying side of each belt is in contact with the upper surface of the preheating table 2 for transmission. The outlet side of the feeding conveyor 1 is connected to the inlet side of the first rotary conveyor 7, and the inlet side of the intermediate conveyor 3 is connected to the outlet side of the first rotary conveyor 7. The intermediate conveyor 3 is mounted on the translation mechanism 4, which uses a belt or lead screw.
[0024] Combined with appendix Figure 3 As shown, the heating platform 5 includes a heat-conducting plate 51, a heat-conducting liquid pipe 52, a heating tank 53, a circulating pump 54, and thermocouples 55. The heat-conducting liquid pipe 52 can be arranged in a serpentine pattern and is embedded in the heat-conducting plate 51 in the plane direction. The inlet of the heat-conducting liquid pipe 52 is connected to the outlet of the heating tank 53, and the outlet of the heat-conducting liquid pipe 52 is connected to the inlet of the heating tank 53 by connecting pipes 56. The circulating pump 54 is installed on one of the connecting pipes 56, so that the heat-conducting liquid pipe 52 and the heating tank 53 form a circulation loop. The heating tank 53 stores the heat-conducting liquid. After being heated in the heating tank, the heat-conducting liquid is transported into the heat-conducting liquid pipe. The heat-conducting liquid pipe transfers heat to the heat-conducting plate and heats the silicon wafer that is in contact with the heat-conducting plate. The circulating pump keeps the heat-conducting liquid circulating. After the heat transfer and temperature drop, the heat-conducting liquid flows back to the heating tank for heating. Multiple thermocouples 55 are installed on the heat-conducting plate 51.
[0025] The heating platform 5 is used for overall heating. Several workstations are divided on the heating platform 5 to form a matrix arrangement of horizontal and vertical columns. The translation mechanism 4 is parallel to the horizontal column direction, and the transfer mechanism 3 moves on the translation mechanism 4 to correspond to the vertical column.
[0026] Combined with appendix Figure 2As shown, below the heating table 5, a second rotary conveyor belt 8 is set for each vertical workstation. The outlet side of the transfer mechanism 3 is connected to the inlet side of the second rotary conveyor belt 8. The second rotary conveyor belt 8 is made of tabletop paper or tabletop cloth. The second rotary conveyor belt 8 is set as two parallel belts in the conveying direction. The upper conveying side of each belt has a gap with the lower surface of the heat-conducting plate 51. A lifting mechanism 6 is set below each workstation. The lifting mechanism 6 is located below the second rotary conveyor belt 8 and between the two belts. The lifting mechanism 6 includes a platform 61, a guide spring 62, and a drive source 63. The upper end of the guide spring 62 is fixed to the lower side of the platform 61, and the lower end of the guide spring 62 is fixed to the drive source 63. The drive source moves the guide spring and the platform upwards as a whole, contacting and supporting the silicon wafer on the second rotary conveyor belt between the two belts. It continues to move upwards, lifting the silicon wafer until it is in contact with the lower surface of the heat-conducting plate for annealing. After annealing, the drive source moves the guide spring and the platform downwards as a whole, allowing the silicon wafer supported by the platform to fall back onto the second rotary conveyor belt. The platform 61 supports the silicon wafer through point, line, or surface contact; for example, the platform 61 can be a vacuum chuck. The drive source 63 can be a motor or a cylinder.
[0027] Silicon wafers 9, coated with a perovskite precursor wet film, are conveyed by the feeding and conveying mechanism 1 onto the first rotary conveyor belt 7 of the preheating table 2. Both belts support the silicon wafers. Because the first rotary conveyor belt uses tabletop paper or cloth attached to the upper surface of the preheating table, it ensures contact and uniform heat conduction between the silicon wafers and the upper surface of the preheating table. The silicon wafers evaporate some solvent on the preheating table, allowing for precise timing. Then, they are conveyed by the first rotary conveyor belt 7 to the intermediate conveyor mechanism 3. The intermediate conveyor mechanism 3 moves on the translation mechanism 4, allocating wafers to a corresponding column based on the availability of workstations on the heating table 5. From there, they are conveyed by the intermediate conveyor mechanism 3 to the second rotary conveyor belt 8. Both belts support the silicon wafers, transporting them to a specific workstation and avoiding [missing information - likely a continuation of the previous sentence]. The perovskite layer contact belt causes contamination of the silicon wafer. The lifting mechanism 6 lifts the silicon wafer to contact the lower surface of the heating table 5 for heating and annealing. The guide spring 62 supports it vertically, ensuring full contact between the silicon wafer and the heat-conducting plate 51. At the same time, the spring elasticity can control the pressure of the silicon wafer contacting the heat-conducting plate, ensuring full contact without damaging the silicon wafer and perovskite layer. This is superior to the existing conventional heating through substrate heat conduction, which can greatly improve the grain size and crystal quality of the perovskite layer, and can accurately control the annealing time of the silicon wafer. After annealing, the lifting mechanism moves the silicon wafer down to the second rotary conveyor belt and transports it out of the platform, without interfering with the silicon wafers being annealed at other stations. The matrix processing station improves the production cycle.
[0028] Heating platform 5 employs a liquid-thermal method. A temperature controller can be installed in the heating tank to control the liquid temperature, which is fed back by thermocouples installed on the heat-conducting plate. A circulating pump maintains the circulation of the heat-conducting liquid, ensuring the uniformity (e.g., <1%T), stability, and controllability of the temperature over a large area of the heat-conducting plate, making the entire annealing process temperature-controlled. Each station on the heating platform in the same vertical column is driven by a second rotary conveyor belt, allowing silicon wafers to be arranged and transported sequentially from front to back. Each vertical column can handle several silicon wafers in sequence, significantly improving production efficiency.
[0029] Silicon wafers are not limited to single-junction perovskite solar cells, perovskite tandem solar cells, or perovskite crystalline silicon solar cells.
Claims
1. An annealing apparatus for preparing perovskite solar cells, characterized in that: The system includes a feeding and conveying mechanism (1), a preheating table (2), a transfer and conveying mechanism (3), a translation mechanism (4), a heating table (5), and a lifting mechanism (6). A first rotary conveyor belt (7) is installed on the preheating table (2). The feeding and conveying mechanism (1) is connected to the inlet side of the first rotary conveyor belt (7). Several workstations are distributed on the heating table (5) in a matrix arrangement of horizontal and vertical columns. Below the heating table (5), a second rotary conveyor belt (8) is installed corresponding to each vertical workstation. The lifting mechanism (6) is located below each workstation. Below the second rotary conveyor belt (8), the transfer mechanism (3) is installed on the translation mechanism (4). The transfer mechanism (3) moves on the translation mechanism (4) to correspond to the vertical column of the matrix chemical station. The inlet side of the transfer mechanism (3) is connected to the outlet side of the first rotary conveyor belt (7). The outlet side of the transfer mechanism (3) is connected to the inlet side of the second rotary conveyor belt (8). The lifting mechanism (6) lifts the silicon wafer on the second rotary conveyor belt (8) to fit against the heating table (5) for annealing.
2. The annealing apparatus for preparing perovskite solar cells according to claim 1, characterized in that: The rotary conveyor belts of the feeding and transfer mechanism (1) and the transfer mechanism (3) are belts.
3. The annealing apparatus for preparing perovskite solar cells according to claim 1, characterized in that: The first rotary conveyor belt (7) and the second rotary conveyor belt (8) are made of table paper or table cloth and are both parallel double rotary conveyor belts. The upper transmission side of the first rotary conveyor belt (7) is in contact with the upper surface of the preheating table (2) for transmission. The lifting mechanism (6) is located below the second rotary conveyor belt (8) and between the double rotary conveyor belts.
4. The annealing apparatus for preparing perovskite solar cells according to claim 1, characterized in that: The translation mechanism (4) uses a belt or a lead screw.
5. The annealing apparatus for preparing perovskite solar cells according to claim 1, characterized in that: The heating platform (5) includes a heat-conducting plate (51), a heat-conducting liquid pipe (52), a heating tank (53), and a circulation pump (54). The heat-conducting liquid pipe (52) is embedded in the heat-conducting plate (51). The inlet of the heat-conducting liquid pipe (52) is connected to the outlet of the heating tank (53), and the outlet of the heat-conducting liquid pipe (52) is connected to the inlet of the heating tank (53). The circulation pump (54) is installed on the connecting pipe between the heat-conducting liquid pipe (52) and the heating tank (53). The heating tank (53) delivers heat-conducting liquid into the heat-conducting liquid pipe (52). A thermocouple (55) is installed on the heat-conducting plate (51).
6. The annealing apparatus for preparing perovskite solar cells according to claim 1, characterized in that: The lifting mechanism (6) includes a platform (61), a guide spring (62), and a drive source (63). The upper end of the guide spring (62) is fixed to the lower side of the platform (61), and the lower end of the guide spring (62) is fixed to the drive source (63).
7. The annealing apparatus for preparing perovskite solar cells according to claim 6, characterized in that: The platform (61) supports the silicon wafers on the second rotary conveyor belt (8) by point, line, or surface contact.
8. The annealing apparatus for preparing perovskite solar cells according to claim 6, characterized in that: The platform (61) is a vacuum suction cup.