一种半导体硅单晶生长用排气过滤系统
By using an alternating filter tank and backflush tube assembly in the single crystal growth system, the problem of filter system blockage was solved, ensuring unobstructed exhaust, enabling continuous cleaning and resetting of the filter element, and improving the stability and efficiency of single crystal growth.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- YANGZHOU HEJING TECH CO LTD
- Filing Date
- 2025-08-12
- Publication Date
- 2026-07-17
AI Technical Summary
During single crystal growth, the filtration system is prone to clogging, affecting the smoothness of exhaust, especially during heavy-doped single crystal growth when there are more volatile dust particles, leading to filter blockage.
A system employing at least two filter canisters and a main piping network is used, with the filter canisters used alternately and backflushed for cleaning to ensure the filter elements remain unobstructed. Specifically, the intake manifold and backflushing manifold work alternately, utilizing an external air source to backflush the filter canisters, remove any deposits, and reset the filter elements.
This ensures the continuous smooth operation of the filtration system during single crystal growth, avoiding filter clogging and guaranteeing the stability and efficiency of the crystal growth process.
Smart Images
Figure CN224506588U_ABST
Abstract
Claims
1. An exhaust filtration system for semiconductor silicon single crystal growth, characterized in that, include: At least two filter canisters, each filter canister being provided with an air inlet and an air outlet; At least two main pipelines, each corresponding to one of the two filter tanks, the main pipelines including an air intake pipe assembly and a backflush pipe assembly; One end of the air inlet pipe assembly is connected to the air outlet of the growth furnace, and the other end is connected to the vacuum pump via the air inlet and air outlet of the filter tank. One end of the backflush pipe assembly is connected to an external pressurized air source, and the other end passes through the air outlet and air inlet of the filter tank in sequence.
2. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 1, wherein Both the air inlet pipe assembly and the backflush pipe assembly include a pipe and two valves connected in series in the pipe. The two valves are respectively located at the air inlet and air outlet of the filter tank.
3. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to Claim 1, wherein The filter tank includes: The tank body has an air inlet and a discharge outlet at the bottom. A can lid is sealed to the opening at the top of the can body, and an air vent is provided on the can lid; A partition is sandwiched between the tank body and the tank lid to separate the internal spaces of the tank body and the tank lid; Several filter elements are disposed on the partition plate.
4. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 3, wherein The top edge of the tank body is provided with a first stepped groove, the bottom edge of the tank cover is provided with a second stepped groove, and the partition is sandwiched between the first stepped groove and the second stepped groove.
5. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 4, wherein The end edges of the tank body and the tank cover are provided with a plurality of first fastening holes that pass through the first step groove, the partition, and the second step groove in sequence. The end edges of the can body and the can lid are provided with a plurality of second fastening holes located on the outer ring of the first fastening hole.
6. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 3, wherein The partition plate is provided with a plurality of elongated holes, and a first countersunk hole is provided on the top of the partition plate corresponding to the elongated holes; The filter element is provided with a neck ring that matches the elongated hole. The neck ring passes through the first countersunk hole from bottom to top and is then rotated and snapped into the first countersunk hole.
7. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 6, wherein It also includes a fastening ring, which is fastened to the portion of the top of the filter element that passes through the elongated hole.
8. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 7, wherein The top of the partition plate is provided with a second countersunk hole corresponding to the first countersunk hole, and the bottom of the fastening ring is sealed and connected to the second countersunk hole.
9. The exhaust gas filtering system for growing a semiconductor silicon single crystal according to claim 8, wherein The second countersunk hole has an annular sealing groove, which is filled with a sealing ring, and the sealing ring is sealed to the bottom of the fastening ring.