半导体级单晶硅片自动控温酸洗槽

By introducing ultrasonic vibration and acid spraying into the pickling tank of monocrystalline silicon wafers to form directional turbulence, combined with the automatic control of temperature sensors and PLC system, the problems of insufficient acid contact and inaccurate temperature control in traditional pickling tanks are solved, achieving efficient and stable pickling effect, and improving silicon wafer quality and production efficiency.

CN224507838UActive Publication Date: 2026-07-17SHANDONG KEXIN ELECTRONICS

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
SHANDONG KEXIN ELECTRONICS
Filing Date
2025-08-05
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In traditional temperature-controlled pickling tanks, the acid solution does not make sufficient contact with the silicon wafer surface when pickling monocrystalline silicon wafers, resulting in slow impurity removal and inaccurate temperature control, leading to low production efficiency and unstable quality.

Method used

The system employs an automated temperature-controlled pickling tank for semiconductor-grade monocrystalline silicon wafers. It utilizes ultrasonic vibration and acid spraying to create directional turbulence, combined with real-time monitoring by temperature sensors and automatic control by a PLC system. This ensures that the pickling process is carried out at a uniform temperature, achieving full contact and efficient reaction between the acid and the silicon wafer surface.

Benefits of technology

It significantly improves pickling efficiency, shortens pickling time, removes impurities more thoroughly, improves the purity and surface quality of silicon wafers, reduces labor intensity, and enhances the level of production automation.

✦ Generated by Eureka AI based on patent content.

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Abstract

本实用新型公开了半导体级单晶硅片自动控温酸洗槽,包括酸洗槽本体,所述酸洗槽本体的侧壁上安装有八个加热器,且八个加热器等间距设置在酸洗槽本体上下两端的四角,所述酸洗槽本体的两侧中部均安装有超声波发生器,所述酸洗槽本体的两侧上下两端均安装有喷管,所述喷管的一侧连接有输送机构。本实用新型通过超声波振动和酸液喷射形成的定向紊流,酸液与硅片表面的接触更加充分,杂质去除速度加快,与传统浸泡酸洗相比,大大提高了生产效率,超声波的空化效应能够有效破坏硅片表面杂质的附着层,酸液喷射形成的紊流进一步增强了酸液与杂质的反应,使得杂质去除更加彻底,从而提高了硅片的纯度和表面质量。
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Claims

1. A temperature-controlled acid washing tank for semiconductor-grade single crystal silicon wafers, comprising an acid washing tank body (2), characterized in that, Eight heaters (7) are installed on the side wall of the pickling tank body (2), and the eight heaters (7) are equally spaced at the four corners of the upper and lower ends of the pickling tank body (2). Ultrasonic generators (3) are installed in the middle of both sides of the pickling tank body (2). Spray pipes (8) are installed at both the upper and lower ends of both sides of the pickling tank body (2). A conveying mechanism is connected to one side of the spray pipe (8). A dispersion pipeline is installed on one side of the pickling tank body (2). A circulation mechanism is connected to the bottom of the other side of the pickling tank body (2). The circulation mechanism is connected to the dispersion pipeline. A pickling chamber (1) is provided inside the pickling tank body (2).

2. The temperature-controlled acid-washing tank for semiconductor-grade single-crystal silicon wafers according to claim 1, characterized in that: The conveying mechanism includes nozzles (9) connected to both sides of the nozzle (8), one end of which penetrates the side wall of the pickling tank body (2) and extends into the pickling chamber (1).

3. The temperature-controlled acid-washing tank for semiconductor-grade single-crystal silicon wafers according to claim 2, characterized in that: Multiple temperature sensors (13) are installed at equal intervals on the circumferential sidewall inside the pickling chamber (1).

4. The temperature-controlled acid-washing tank for semiconductor-grade single-crystal silicon wafers according to claim 1, characterized in that: The dispersion pipeline includes a connecting pipe (11) fixed on one side of the pickling tank body (2). Both ends of the connecting pipe (11) are connected to joints, and both sides of the joints are connected to fixed pipes (10). One end of a fixed pipe (10) on the same side is connected to one side of a spray pipe (8) on the same side.

5. The temperature-controlled acid-washing tank for semiconductor-grade single-crystal silicon wafers according to claim 4, characterized in that: The circulation mechanism includes an absorption pipe (4) connected to one side of the lower end of the pickling tank body (2). A circulation pump (6) is provided on one side of the pickling tank body (2). One end of the absorption pipe (4) is connected to the circulation pump (6). One end of the circulation pump (6) is connected to a conveying pipe (5). One end of the conveying pipe (5) is connected to one side of the connecting pipe (11).

6. The temperature-controlled acid-washing tank for semiconductor-grade single-crystal silicon wafers according to claim 1, characterized in that: An addition pipe (14) is connected to the upper side of the pickling tank body (2), and a drain pipe (12) is connected to the lower side of the pickling tank body (2).