一种提高晶圆膜厚均匀性的进排气系统、生长炉

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By setting multiple air inlets and corresponding air outlets in a vertical polycrystalline furnace, the airflow distribution is optimized, solving the problem of uneven wafer film thickness and achieving a significant improvement in wafer film thickness uniformity.

CN224513612UActive Publication Date: 2026-07-17TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH +1

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Utility models(China)
Current Assignee / Owner: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
Filing Date: 2025-07-18
Publication Date: 2026-07-17

AI Technical Summary

Technical Problem

In existing vertical polycrystalline furnaces, due to unreasonable design of the gas inlet and outlet structures, there are significant differences in wafer film thickness between the center and the edge regions, forming a coffee ring effect that affects film thickness uniformity.

Method used

At least two air inlet pipes are provided in the reaction chamber, each with several air inlets and corresponding air outlets are provided on the inner wall of the chamber. The positions of the air inlets and outlets are corresponding and evenly distributed, and the airflow path is optimized to improve uniformity.

Benefits of technology

By optimizing the intake and exhaust system, the wafer film thickness uniformity was reduced from ±7.2% to ±1.5%, significantly improving film thickness uniformity without requiring modification of the main cavity structure.

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Abstract

一种提高晶圆膜厚均匀性的进排气系统、生长炉，包括反应腔和石英舟，其特征在于，在所述反应腔内至少设有两个进气管，且在每个所述进气管上设有若干进气口；罩设石英舟的内腔壁面上配置有与所述进气口位置相对应的出气口。本申请通过优化进排气方式，从而可改善气流流通路径长度及流通分布状态，有效解决晶圆膜厚中的“咖啡环”技术问题；使晶圆全表面膜厚标准差从±7.2％降至±1.5％，膜厚均匀性大幅提升。整个结构无需改造腔体主体结构，仅在现有结构上改进进排气系统，即可调整晶圆中心区域与边缘区域的流速差异，保证晶圆膜厚的均匀性。

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Claims

1. An improved gas inlet and outlet system for improving the film thickness uniformity of a wafer, comprising a reaction chamber and a quartz boat, characterized in that, At least two air inlet pipes are provided in the reaction chamber, and each air inlet pipe is provided with several air inlets; the inner wall of the quartz boat is provided with air outlets corresponding to the positions of the air inlets.

2. The gas supply and exhaust system for improving the film thickness uniformity of a wafer according to claim 1, wherein The number of air inlets and air outlets is the same; the air inlets are all located on the wall surface of the air inlet pipe near the wafer; and the air outlets are all located on the side of the inner cavity away from the air inlets.

3. The gas supply and exhaust system for improving the film thickness uniformity of a wafer according to claim 1 or 2, wherein There are two or three air intake pipes; and all the air inlets on each air intake pipe are evenly spaced in the same column along its height direction.

4. The gas supply and exhaust system of claim 3, wherein The air intake pipes are arranged side by side on one side of the wafer, and their horizontal distance relative to the vertical diameter of the wafer is the same.

5. The gas supply and exhaust system of claim 3, wherein The air intake pipe is configured along the outer edge of the wafer, and its horizontal lateral distance to the edge of the wafer is the same.

6. The gas supply and exhaust system of claim 4 or 5, wherein When there are two, they are distributed on both sides of the wafer center and symmetrically arranged with respect to the wafer diameter; When there are three, the middle air intake pipe is positioned relative to the center of the wafer, and the air intake pipes on both sides are symmetrically arranged relative to the middle air intake pipe.

7. The gas supply and exhaust system of claim 6, wherein The distribution of the air outlet relative to the edge of the wafer is the same as that of the air inlet.

8. The gas supply and exhaust system for improving the film thickness uniformity of a wafer according to any one of claims 4 to 5 and 7, wherein The number of air inlets on each of the air inlets is the same, and the horizontal positions of all the air inlets correspond one-to-one; the vertical height of the air inlet is 1-3mm higher than the height of its corresponding wafer.

9. The gas supply and exhaust system of claim 8, wherein The air inlet is a long strip structure with both its upper and lower opening surfaces inclined downwards at an angle of 30-60°. The air outlets are evenly distributed radially along the inner cavity wall.

10. A growth furnace, equipped with an air intake and exhaust system as described in any one of claims 1-9.