一种用于控制金刚石沉积速率的气流系统结构
By designing a gas flow system consisting of hydrogen and methane branch pipes, distribution stations, and automatic control valves, the problem of uneven hydrogen and methane gas flow was solved, enabling stable control of diamond deposition rate and expansion of production scale.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- LUOYANG YUXIN DIAMOND CO LTD
- Filing Date
- 2025-08-23
- Publication Date
- 2026-07-17
AI Technical Summary
In existing diamond production processes, the uneven and unstable gas flow of hydrogen and methane affects the deposition rate and limits the scale of production.
An airflow system structure was designed, including hydrogen and methane branch pipes, a distribution platform, an automatic control valve, and a pressure relief tank, to ensure uniform and stable airflow and control the deposition rate by adjusting the airflow.
It achieves uniform and stable hydrogen and methane gas flow, enabling better control of diamond deposition rate to meet production needs and ensure equipment safety in emergency situations.
Smart Images
Figure CN224513613U_ABST
Abstract
Claims
1. A gas flow system architecture for controlling diamond deposition rate, characterized by: The reactor includes a base inside, a molybdenum support connected above the base, a plasma sphere formed above the molybdenum support, a hydrogen buffer tank on the left side of the reactor, a hydrogen buffer outlet pipe connected to the lower right side of the hydrogen buffer tank, three hydrogen branch pipes connected to the end of the hydrogen buffer outlet pipe, a hydrogen distribution platform connected to the end of the hydrogen branch pipes, and a hydrogen pressure relief pipe connected to the hydrogen buffer outlet pipe. A methane buffer tank is also located on the right side of the reactor, a methane buffer outlet pipe connected to the lower left side of the methane buffer tank, three methane branch pipes connected to the end of the methane buffer outlet pipe, a methane distribution platform connected to the end of the methane buffer outlet pipe, and a methane pressure relief pipe connected to the methane buffer outlet pipe.
2. The gas flow system structure for controlling the deposition rate of diamond according to claim 1, wherein: The hydrogen distribution platform has hydrogen distribution holes, and the methane distribution platform has methane distribution holes. Both the hydrogen distribution platform and the methane distribution platform are "bow" shaped, and their outer walls are tightly fitted to the inner wall of the reactor.
3. The gas flow system structure for controlling the deposition rate of diamond according to claim 1, wherein: A first self-regulating valve is installed on the hydrogen branch pipe, and the number of the first self-regulating valves is adapted to the number of hydrogen branch pipes. A second self-regulating valve is installed on the methane branch pipe, and the number of the second self-regulating valves is adapted to the number of methane branch pipes.
4. The gas flow system structure for controlling the deposition rate of diamond according to claim 1, wherein: The hydrogen pressure relief pipe is connected to a hydrogen pressure relief tank at its end, and a hydrogen pressure relief valve is installed on the hydrogen pressure relief pipe. The methane pressure relief pipe is connected to a methane pressure relief tank at its end, and a methane pressure relief valve is installed on the methane pressure relief pipe.
5. The gas flow system structure for controlling the deposition rate of diamond according to claim 1, wherein: The hydrogen buffer tank is connected to a hydrogen main pipe on the upper left side, and the methane buffer tank is connected to a methane main pipe on the upper right side.
6. The gas flow system structure for controlling the deposition rate of diamond according to claim 1, wherein: A vacuum tube is connected to the bottom right side of the reactor, and a vacuum pump is connected to the end of the vacuum tube.