Film forming device

Abstract

This application discloses a film deposition apparatus, comprising: a housing having a reaction chamber and a first air inlet and a first air outlet communicating with the reaction chamber; a base located within the reaction chamber, the base including a first surface and a second surface, the first surface being used to support a wafer; a support assembly located on one side of the second surface of the base, the support assembly including a support body supporting the base and forming an enclosing space; a heating assembly located within the enclosing space, the heating assembly including an induction coil generating an induced magnetic field, and heating the base through the eddy current effect of the induced magnetic field; and a shielding element, at least partially located between the transmission line connected to the induction coil and the support assembly. By incorporating an induction coil, this application can uniformly heat the base, reducing the risk of localized overheating or uneven temperature distribution on the base, thereby improving the uniformity and quality of thin film deposition on the wafer surface. Simultaneously, the shielding element can effectively suppress electromagnetic radiation generated during the heating process.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a film forming apparatus. Background Technology

[0002] Currently, the base of existing film-forming devices needs to achieve the temperature required by the reaction chamber in the preparation process under the control of the heating field. Typically, these temperatures are often greater than 1000°C, and the process gases are often corrosive. Therefore, it is very important to protect the heating coil to extend its service life. Utility Model Content

[0003] The main technical problem addressed by this application is to provide a film-forming apparatus that improves the stability of the heating process of the film-forming apparatus.

[0004] To solve the above-mentioned technical problems, this application adopts a technical solution: providing a film forming apparatus, the film forming apparatus comprising: a housing having a reaction chamber and a first air inlet and a first air outlet communicating with the reaction chamber; a base located within the reaction chamber, the base including a first surface and a second surface disposed opposite to each other, the first surface being used to support a wafer or a combination of a wafer and a tray; a support assembly located on one side of the second surface of the base, the support assembly including a support body, the support body being cylindrical with an opening facing the base, the top end of the support body directly or indirectly supporting the periphery of the base, and the support body and the base cooperating to form an enclosing space opposite to the first surface; a heating assembly disposed in the reaction chamber and further located within the enclosing space, the heating assembly including an induction coil, the induction coil being connected to a transmission line, the transmission line transmitting alternating current to the induction coil to generate an induced magnetic field, and the eddy current effect of the induced magnetic field causing the base to heat up; and a shielding member fixed relative to the heating assembly, and at least partially located between the transmission line connected to the induction coil and the support assembly.

[0005] The film-forming device further includes: a first support plate disposed on one side of the second surface of the base, the first support plate being used to support the heating assembly, the induction coil including multiple turns, and the first support plate having multiple support columns along the radial direction of the base, with adjacent support columns supporting different turns of the induction coil.

[0006] The support assembly further includes a partition plate located between the support body and the base, and the support body indirectly supports the periphery of the base through the partition plate.

[0007] The film-forming device further includes a driving component connected to the support component, which drives the support component to rotate the base. The driving component includes: an inner driving member connected to the support component; an outer driving member sleeved on the outside of the inner driving member and magnetically coupled to the inner driving member; and a driving part for driving the outer driving member to rotate, thereby causing the inner driving member to drive the support component to rotate under the induction of the outer driving member.

[0008] The film-forming apparatus further includes: an isolation sleeve located between the inner driving member and the outer driving member, with one end of the isolation sleeve fixedly connected to the housing; and at least one support platform connected to the end of the isolation sleeve away from the housing, the support platform further supporting the shielding member and the transmission line of the induction coil.

[0009] The film-forming device further includes a heat insulation cover, which includes at least a first heat insulation wall surrounding the base and the support assembly, with a gap between the first heat insulation wall and the base and the support assembly.

[0010] The base has a first radial dimension, the support body has a second radial dimension, the second radial dimension is smaller than the first radial dimension, the first insulation wall has a first annular groove corresponding to the base and a second annular groove corresponding to the support body, the radial dimension of the first annular groove is larger than the first radial dimension, and the radial dimension of the second annular groove is larger than the second radial dimension and smaller than the first radial dimension.

[0011] The film-forming device further includes: a heating plate, which is opposite to and spaced apart from the base; a heat insulation cover including a second heat insulation wall, which covers the periphery of the heating plate and the side surface of the heating plate facing away from the base; and a sleeve assembly disposed on the airflow path from the first air inlet to the first air outlet, defining upstream and downstream by the airflow direction, wherein the sleeve assembly at least covers the first heat insulation wall and the second heat insulation wall located upstream of the base.

[0012] The base includes a first base and a second base surrounding the first base. The second base has a third annular groove, and the first base is supported in the third annular groove. The first base is used to support the wafer or a combination of wafer and tray.

[0013] The shielding component has a cooling channel inside for the flow of cooling medium.

[0014] Beneficial Effects: By incorporating an induction coil, this application enables the magnetic field generated by the coil to uniformly heat the substrate, reducing the risk of localized overheating or uneven temperature distribution on the substrate, thereby improving the uniformity and quality of thin film deposition on the wafer surface. Simultaneously, since induction coil heating primarily relies on an alternating magnetic field for energy transfer, the coil itself is not exposed to a high-temperature environment, effectively reducing coil aging. Furthermore, the support assembly and substrate work together to form an enclosing space, effectively preventing process gases from intruding into the induction coil area, providing effective protection for the coil and extending its service life. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0016] Figure 1 This is a schematic diagram of the structure of a film-forming apparatus provided in an embodiment of this application;

[0017] Figure 2 for Figure 1 Enlarged view of Part II;

[0018] Figure 3 This is a schematic diagram of the connection structure between the first support plate and the second support plate provided in an embodiment of this application;

[0019] Figure 4 This is a schematic diagram of the structure of a driving component provided in an embodiment of this application;

[0020] Figure 5 This is a schematic diagram of the structure of a base provided in one embodiment of this application. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] Please refer to the following: Figure 1 and Figure 2 This application provides a film forming apparatus 100, typically used to form a thin film of a specific material on the surface of a wafer 10 or other substrate, for example, by depositing a solid thin film on the surface of the wafer 10 or other substrate through chemical vapor deposition (CVD). The film forming apparatus 100 includes a housing 20 and a base 30, a support assembly 80, a heating assembly 40, and a shield 50 disposed within the housing 20. The base 30 supports the wafer 10, the support assembly 80 houses the heating assembly 40, the heating assembly 40 heats the wafer 10 on the base 30, and the shield 50 prevents the alternating magnetic field from affecting other modules.

[0025] Specifically, the housing 20 is provided with a reaction chamber 21 and a first air inlet 22 and a first air outlet 23 communicating with the reaction chamber 21. The first air inlet 22 is used to introduce reaction gas or inert gas into the reaction chamber 21 to control the reaction atmosphere, while the first air outlet 23 is used to discharge waste gas in the reaction chamber 21 or maintain the pressure stability in the reaction chamber 21.

[0026] The base 30 is located within the reaction chamber 21. The base 30 includes a first surface 31 and a second surface 32 disposed opposite to each other. The first surface 31 is used to support the wafer 10 or a combination of the wafer 10 and a tray. The base 30 is used to ensure the stable positioning of the wafer 10 thereon. In one embodiment, the base 30 may be made of a material with high thermal conductivity, such as graphite. It is understood that the wafer 10 is typically transferred to the base 30 via a tray.

[0027] The support assembly 80 is located on one side of the second surface 32 of the base 30. The support assembly 80 includes a support body 81, which is cylindrical with an opening facing the base. The top of the support body 81 directly or indirectly supports the periphery of the base 30, and the support body 81 and the base 30 cooperate to form an enclosing space 82 that is away from the first surface 31.

[0028] Specifically, the support body 81 is used to support the base 30 and form a relatively closed space between the base 30 and the base 30, namely the enclosing space 82. The enclosing space 81 can be used to arrange the heating component 40, reduce the diffusion of reaction gas from the reaction chamber 21 to the heating component 40, prevent the heating component 40 from being corroded by the reaction gas, effectively protect the heating component 40, and extend the service life of the heating component 40.

[0029] The heating assembly 40 is disposed in the reaction chamber 21 and further located within the enclosing space 82. It can be disposed on one side of the second surface 32 of the base 30 or on one side of the first surface 31 of the base 30. The heating assembly 40 includes an induction coil 41, which is connected to a transmission line 411. The transmission line 411 transmits alternating current to the induction coil 41 to generate an induced magnetic field, and the eddy current effect of the induced magnetic field heats the base 30.

[0030] The principle of indirectly heating the wafer 10 using the induction coil 41 is that the alternating current in the induction coil 41 generates a reciprocating magnetic field, which in turn forms a changing electric field within the base 30. This electric field creates eddy currents within the base 30, causing the base 30 to heat up. The base 30 then transfers the generated heat away through heat conduction, heat radiation, or heat convection, thereby heating the wafer 10 on the base 30. In one embodiment, the induction coil 41 is arranged in a spiral pattern.

[0031] The shielding member 50 is fixed relative to the heating assembly 40 and is at least partially located between the transmission line 411 connected to the induction coil 41 and the support assembly 80. The shielding member 50 serves as electromagnetic shielding and can be fixed to the support body 81 to form a stable shielding structure. In one embodiment, the material of the shielding member 50 includes stainless steel.

[0032] In practical applications, the wafer 10 is first placed on the first surface 31 of the base 30. Then, the heating component 40 is activated, and an alternating magnetic field is generated through the induction coil 41, causing the base 30 to heat up due to the eddy current effect, which in turn heats the wafer 10 to the temperature required for the process. Finally, a reaction gas is introduced to begin the thin film deposition process on the wafer 10.

[0033] In the aforementioned film deposition apparatus 100, by incorporating an induction coil 41, the magnetic field generated by the induction coil 41 can uniformly heat the substrate 30, reducing the risk of localized overheating or uneven temperature distribution on the substrate 30, thereby improving the uniformity and quality of thin film deposition on the wafer 10 surface. Simultaneously, the shielding member 50, covering the transmission line 411 connecting the induction coil 41, effectively suppresses electromagnetic radiation generated during heating, reducing the risk of interference from the transmission line 411 to other surrounding components. Furthermore, since the heating of the induction coil 41 primarily relies on an alternating magnetic field for energy transfer, the induction coil 41 itself is not placed in a high-temperature environment, effectively reducing the aging of the induction coil 41.

[0034] Please continue reading. Figure 1 and Figure 2 In one embodiment, the film-forming apparatus 100 further includes a first support plate 60, which is disposed on one side of the second surface 32 of the base 30 and is used to support the heating assembly 40. The induction coil 41 includes multiple turns, and the first support plate 60 is provided with multiple support columns 61 along the radial direction of the base 30, with adjacent support columns 61 supporting different turns of the induction coil 41.

[0035] Specifically, the induction coil 41 is securely fixed on the first support plate 60, reducing the risk of the induction coil 41 shifting due to vibration or temperature changes. In other words, the first support plate 60 can ensure that the relative position between the induction coil 41 and the base 30 remains stable, thereby maintaining heating efficiency and heating uniformity.

[0036] Meanwhile, the multi-turn induction coil 41 can enhance the magnetic field strength, improve heating efficiency, and form a uniform magnetic field distribution, thereby achieving uniform heating of the wafer 10 surface. The support column 61 provides an independent support point for each turn of the induction coil 41, reducing the risk of deformation or displacement of the induction coil 41 due to its own weight or thermal expansion, and improving the stability of the induction coil 41.

[0037] Please continue reading. Figure 1 and Figure 2 In one embodiment, the first support plate 60 has a disc structure, and the center of the disc structure first support plate 60 can be aligned with the center of the base 30, thereby improving the stability of the first support plate 60 supporting the base 30.

[0038] In one embodiment, the material of the first support plate 60 includes ceramic, which has the characteristics of high temperature resistance and electrical insulation, thereby reducing the risk that the first support plate 60 will affect the magnetic field generated by the induction coil 41.

[0039] In one embodiment, the first support plate 60 is provided with a through hole 62, and the transmission line 411 connected to the induction coil 41 passes through the through hole 62 through the first support plate 60 and extends toward the side of the first support plate 60 away from the induction coil 41.

[0040] The through holes 62 on the first support plate 60 are reserved for the transmission line 411 connected to the induction coil 41. The transmission line 411 extends from the side where the induction coil 41 is located to the other side of the first support plate 60 through these through holes 62, which facilitates connection to an external power supply system.

[0041] In one embodiment, the number of through holes 62 is the same as the number of induction coils 41, and the through holes 62 correspond one-to-one with the induction coils 41. That is, each transmission line 411 of the induction coil 41 corresponds to one through hole 62, and the transmission line 411 of each induction coil 41 passes through its corresponding through hole 62 and through the first support plate 60. In other embodiments, the number of through holes 62 may be less than the number of induction coils 41, that is, one through hole 62 can allow at least two transmission lines 411 of the induction coils 41 to pass through. The specific setting depends on the requirements and is not limited here.

[0042] Please refer to the following: Figure 1 , Figure 2 and Figure 3 In one embodiment, the film-forming apparatus 100 further includes a plurality of second support plates 70, which are spaced apart from the side of the first support plate 60 away from the base 30, and the second support plates 70 are all arranged pointing towards the center of the first support plate 60. The shielding member 50 is connected to the end of the plurality of second support plates 70 near the center of the first support plate 60.

[0043] Specifically, the second support plate 70 is radially distributed on the side of the first support plate 60 away from the base 30, which can improve the structural strength of the first support plate 60 and thus improve the stability of the first support plate 60 in supporting the induction coil 41.

[0044] In one embodiment, the number of second support plates 70 includes 6. It can be understood that, depending on the size of the first support plate 60, the number of second support plates 70 can be 4, 7, 8, etc., and is set according to the requirements, without limitation here.

[0045] In one embodiment, the material of the second support plate 70 is the same as that of the first support plate 60, for example, both the second support plate 70 and the first support plate 60 are made of ceramic, thereby simplifying the manufacturing process. It is understood that the material of the second support plate 70 may also be different from that of the first support plate 60, depending on the specific requirements, and is not limited here.

[0046] In one embodiment, the first support plate 60 and the second support plate 70 can be an integrally formed structure. In other embodiments, the first support plate 60 and the second support plate 70 can be independent separate structures, thereby being fixedly connected by bolts or the like.

[0047] Please refer to it again. Figure 1 and Figure 2 In one embodiment, a cooling channel (not shown) for the flow of cooling medium is formed inside the shield 50. The shield 50 is used to suppress electromagnetic leakage generated by the transmission line 411 of the induction coil 41. The cooling medium can cool the shield 50, reduce the risk of the shield 50's magnetic permeability decreasing due to high temperature, and thus improve the service life of the shield 50.

[0048] In one embodiment, the cooling channel includes an inlet channel (not shown) and an outlet channel (not shown), forming a loop between the inlet channel and the outlet channel to achieve cooling circulation and improve the cooling efficiency of the shield 50.

[0049] Please continue reading. Figure 1 and Figure 2 In one embodiment, the support assembly 80 further includes a partition plate 83 located between the support body 81 and the base 30, with the support body 81 indirectly supporting the periphery of the base 30 through the partition plate 83. It is understood that the cooperation between the partition plate 83 and the support body 81 enables the support assembly 80 to achieve thermal insulation, thereby improving the structural stability of the support assembly 80. The aforementioned support assembly 80 not only supports the base 30 but also protects the heating assembly 40, thereby preventing external interference with the heating assembly 40.

[0050] In one embodiment, the material of the support body 81 includes quartz. Quartz has good thermal stability and is non-conductive, which can effectively reduce eddy current losses and electromagnetic interference during the heating process, thereby improving heating efficiency and reducing energy loss. In other embodiments, part of the material of the support body 81 is quartz, and the other part is aluminum. The specific material of the support body 81 is set according to the requirements and is not limited here.

[0051] In one embodiment, the material of the insulating plate 83 is the same as that of the supporting body 81, for example, both the insulating plate 83 and the supporting body 81 are made of quartz, thereby simplifying the manufacturing process. In other embodiments, the materials of the insulating plate 83 and the supporting body 81 may be different; for example, the material of the insulating plate 83 may include quartz, and the material of the supporting body 81 may include aluminum. It is understood that the insulating plate 83 and the supporting body 81 may also be made of other dielectric materials, depending on the requirements, and no restrictions are imposed here.

[0052] Please refer to the following: Figure 1 and Figure 4 In one embodiment, the film-forming apparatus 100 further includes a drive assembly 90, which is connected to the support assembly 80 and is used to drive the support assembly 80 to rotate the base 30. The drive assembly 90 includes an inner drive member 91, an outer drive member 92, and a drive unit (not shown). The inner drive member 91 is connected to the support assembly 80, and the outer drive member 92 is sleeved on the outside of the inner drive member 91. The outer drive member 92 is magnetically coupled to the inner drive member 91. The drive unit is used to drive the outer drive member 92 to rotate, thereby causing the inner drive member 91 to drive the support assembly 80 to rotate under the induction of the outer drive member 92.

[0053] Specifically, the drive component 90 is a magnetic drive structure. When the drive unit drives the outer drive component 92 to rotate, the outer drive component 92 will induce a rotating magnetic field in the same direction in the inner drive component 91. The magnetic coupling effect is used to drive the inner drive component 91 and its connected support component 80 and base 30 to rotate synchronously, thereby realizing non-contact transmission.

[0054] In one embodiment, the drive unit is a motor used to control the rotational speed of the external drive component 92.

[0055] In one embodiment, the film-forming apparatus 100 further includes an isolation sleeve 101 and at least one support platform 102. The isolation sleeve 101 is located between the inner drive member 91 and the outer drive member 92, and one end of the isolation sleeve 101 is fixedly connected to the housing 20. The support platform 102 is connected to the end of the isolation sleeve 101 away from the housing 20, and the support platform 102 further supports the shielding member 50 and the transmission line 411 of the induction coil 41.

[0056] Specifically, the isolation sleeve 101 isolates the inner drive component 91 from the outer drive component 92, enhancing the stability of the entire drive assembly 90. At the same time, the support platform 102 fixes the shield 50, reducing the risk of magnetic field leakage. The support platform 102 can also support the transmission line 411 of the induction coil 41, reducing the risk of the transmission line 411 being suspended or vibrating.

[0057] In one embodiment, the inner drive component 91 and the isolation sleeve 101, and the outer drive component 92 and the isolation sleeve 101 are rotatably connected by a bearing 93 to improve the stability of the rotation of the support assembly 80.

[0058] Please refer to it again. Figure 1 and Figure 2 In one embodiment, the film-forming apparatus 100 further includes a heat insulation cover 103, which includes at least a first heat insulation wall 1031 surrounding the base 30 and the support assembly 80, with a gap 1032 formed between the first heat insulation wall 1031 and the base 30 and the support assembly 80.

[0059] Specifically, the insulation cover 103 serves to insulate the temperature, reducing heat loss from its interior and thus maintaining a stable temperature in the base 30 region, reducing temperature decay in the radial direction of the base 30. Simultaneously, the gap 1032 between the first insulation wall 1031 and the base 30 and support assembly 80 ensures that the support assembly 80 rotates relative to the insulation cover 103 under the drive of the drive assembly 90, thereby allowing the base 30 on the support assembly 80 to rotate accordingly, improving the uniformity of thin film deposition on the wafer 10 on the base 30.

[0060] In one embodiment, the heat insulation cover 103 is provided with a second air inlet 1033 communicating with the first air inlet 22 and a second air outlet 1034 communicating with the first air outlet 23. The second air inlet 1033 and the second air outlet 1034 are located on one side of the first surface 31 of the base 30.

[0061] The second air inlet 1033 facilitates the introduction of gas from the first air inlet 22 into the reaction chamber 21, while the second air outlet 1034 is used to discharge the waste gas in the reaction chamber 21 to the first air outlet 23, thereby controlling the gas path of the entire reaction chamber 21.

[0062] In one embodiment, the material of the heat insulation cover 103 includes heat insulation felt, which has excellent heat insulation properties and can effectively prevent internal heat from being transferred to the outside.

[0063] Please continue reading. Figure 1 and Figure 2 In one embodiment, the base 30 has a first radial dimension, the support body 81 has a second radial dimension, the second radial dimension is smaller than the first radial dimension, and the first insulation wall 1031 is provided with a first annular groove 1031A corresponding to the base 30 and a second annular groove 1031B corresponding to the support body 81. The radial dimension of the first annular groove 1031A is larger than the first radial dimension, and the radial dimension of the second annular groove 1031B is larger than the second radial dimension and smaller than the first radial dimension.

[0064] Specifically, the base 30 can rotate within the first annular groove 1031A, and the support body 81 can rotate within the second annular groove 1031B. At the same time, the arrangement of the first annular groove 1031A and the second annular groove 1031B makes the first insulation wall 1031 have a stepped structure, which can increase the flow resistance of gas in the gap 1032 and reduce the risk of airflow intruding into the gap 1032.

[0065] Please continue reading. Figure 1 and Figure 2 In one embodiment, the film-forming apparatus 100 further includes a heating plate 104 and a sleeve assembly 105, with the heating plate 104 positioned opposite and spaced apart from the base 30. The insulation cover 103 includes a second insulation wall 1035, which covers the periphery of the heating plate 104 and the side of the heating plate 104 facing away from the base 30. The heating plate 104 absorbs heat generated by radiation or induction heating from the base 30 and re-radiates it back to the base 30, thereby improving heating uniformity. Simultaneously, the second insulation wall 1035 cooperates with the first insulation wall 1031 to form a complete thermal management structure, reducing the risk of heat loss to the outside.

[0066] The sleeve assembly 105 is positioned along the airflow path from the first air inlet 22 to the first air outlet 23, defining upstream and downstream directions by the airflow direction. The sleeve assembly 105 at least covers the first insulation wall 1031 and the second insulation wall 1035 located upstream of the base 30. The sleeve assembly 105 controls the flow direction of the reactive gas, improving the uniformity of the reactive gas distribution in the base 30 region. Simultaneously, it reduces the risk of reactive gas intrusion into the gaps between the first insulation wall 1031, the second insulation wall 1035, and adjacent components.

[0067] In one embodiment, the sleeve assembly 105 includes a first sleeve 1051 and a second sleeve 1052. The first sleeve 1051 is disposed at the second air inlet 1033 for introducing gas from the reaction chamber 21 between the base 30 and the heating plate 104. The second sleeve 1052 is disposed at the second air outlet 1034 for discharging gas between the base 30 and the heating plate 104. The arrangement of the first sleeve 1051 and the second sleeve 1052 protects the assembly gap between the insulation cover 103 and the base 30 and the heating plate 104, improving the sealing performance of the reaction chamber 21.

[0068] In one embodiment, the materials of the heating plate 104, the first sleeve 103, the second sleeve 104, and the base 30 all include graphite, thereby improving the material consistency of the components forming the reaction chamber 21 and improving the stability of the deposition process.

[0069] In other embodiments, the materials of the heating plate 104, the first sleeve 103, the second sleeve 104, and the base 30 may also be different, depending on the specific requirements, and are not limited here.

[0070] Please refer to the following: Figure 1 , Figure 2 and Figure 5 In one embodiment, the base 30 is provided in two parts, including a first base 311 and a second base 312 surrounding the first base 311. The second base 312 is provided with a third annular groove 33, and the first base 311 is supported in the third annular groove 33. The first base 311 is used to support the wafer 10 or a combination of the wafer 10 and the tray.

[0071] Specifically, the first base 311, serving as the central region for core heating, directly supports the wafer 10. The third annular groove 33 creates a gap between the first base 311 and the second base 312, slowing heat conduction between them. This reduces the risk of heat loss from the first base 311, minimizing temperature control accuracy and improving the heating efficiency of the wafer 10 on the first base 311. Furthermore, because heat dissipates rapidly at the edges of the base 30, this separate design prevents excessive temperature gradients across the base 30, thus minimizing the impact on its lifespan.

[0072] In one embodiment, the base 30 may also be configured as a single plate structure, depending on the requirements, and no restrictions are imposed here.

[0073] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A film-forming apparatus, characterized in that, The film-forming device includes: The housing is provided with a reaction chamber and a first air inlet and a first air outlet communicating with the reaction chamber; A base is located within the reaction chamber. The base includes a first surface and a second surface disposed opposite to each other. The first surface is used to support a wafer or a combination of a wafer and a tray. A support assembly is located on one side of the second surface of the base. The support assembly includes a support body, which is cylindrical with an opening facing the base. The top of the support body directly or indirectly supports the periphery of the base, and the support body and the base cooperate to form an enclosing space away from the first surface. A heating assembly is disposed in the reaction chamber and further located within the enclosing space. The heating assembly includes an induction coil connected to a transmission line, which transmits alternating current to the induction coil to generate an induced magnetic field, thereby heating the base through the eddy current effect of the induced magnetic field. A shielding element fixed relative to the heating assembly and at least partially located between the transmission line to which the induction coil is connected and the support assembly.

2. The film-forming apparatus according to claim 1, characterized in that, The film-forming apparatus further includes: A first support plate is disposed on one side of the second surface of the base. The first support plate is used to support the heating assembly. The induction coil includes multiple turns. The first support plate is provided with multiple support columns along the radial direction of the base. Adjacent support columns support different turns of the induction coil.

3. The film-forming apparatus according to claim 1, characterized in that, The support assembly also includes a partition plate located between the support body and the base, through which the support body indirectly supports the periphery of the base.

4. The film-forming apparatus according to claim 1, characterized in that, The film-forming apparatus further includes a driving component, which drives the support component to rotate the base. The driving component includes: The internal drive component is connected to the support assembly; An outer drive component is sleeved on the outside of the inner drive component, and the outer drive component is magnetically coupled to the inner drive component; The driving unit is used to drive the outer drive component to rotate, thereby causing the inner drive component to drive the support assembly to rotate under the induction of the outer drive component.

5. The film-forming apparatus according to claim 4, characterized in that, The film-forming apparatus further includes: An isolation sleeve is located between the inner drive component and the outer drive component, and one end of the isolation sleeve is fixedly connected to the housing. At least one support platform is connected to the end of the isolation sleeve away from the housing, and the support platform further supports the shield and the transmission line of the induction coil.

6. The film-forming apparatus according to claim 1, characterized in that, The film-forming apparatus further includes: The heat insulation cover includes at least a first heat insulation wall surrounding the base and the support assembly, and a gap is formed between the first heat insulation wall and the base and the support assembly.

7. The film-forming apparatus according to claim 6, characterized in that, The base has a first radial dimension, and the supporting body has a second radial dimension, the second radial dimension being smaller than the first radial dimension. The first insulation wall is provided with a first annular groove corresponding to the base and a second annular groove corresponding to the supporting body. The radial dimension of the first annular groove is larger than the first radial dimension, and the radial dimension of the second annular groove is larger than the second radial dimension and smaller than the first radial dimension.

8. The film-forming apparatus according to claim 6, characterized in that, The film-forming apparatus further includes: A heating plate is provided opposite to and spaced apart from the base. The heat insulation cover includes a second heat insulation wall that covers the periphery of the heating plate and the side surface of the heating plate facing away from the base. A sleeve assembly is disposed on the airflow path from the first air inlet to the first air outlet, with the upstream and downstream defined by the airflow direction. The sleeve assembly at least covers the first insulation wall and the second insulation wall located upstream of the base.

9. The film-forming apparatus according to claim 1, characterized in that, The base includes a first base and a second base surrounding the first base. The second base has a third annular groove, and the first base is supported in the third annular groove. The first base is used to support the wafer or a combination of wafer and tray.

10. The film-forming apparatus according to claim 1, characterized in that, The shielding component has a cooling channel inside for the flow of cooling medium.

Images