抽气环、工艺腔室、气体系统及薄膜沉积设备

Abstract

本实用新型提供了一种安装于薄膜沉积设备腔室中的抽气环，包括抽气面环和抽气背环。所述抽气面环环绕于所述工艺腔室中的喷淋板和加热盘之外，并设有沿周向排布的多个第一过气孔，其中，抽气面环的顶部高于所述喷淋板的底部。所述抽气背环环绕于所述抽气面环之外，并具有包围所述抽气面环顶部的顶板、包围所述抽气面环底部的底板，以及包围所述抽气面环外围的侧板，其中，顶板与其上方的工艺腔室上盖板保持一通气间隙，并设有至少一个第二过气孔，底板和 / 或侧板上设有至少一个抽气孔，以经由所述多个第一过气孔从喷淋板与加热盘之间抽取气体，并经由所述至少一个第二过气孔及通气间隙，从喷淋板与抽气面环之间抽取气体。

Claims

1. A gas extraction ring mounted to a process chamber of a thin film deposition apparatus, characterized in that, The extraction ring includes: An extraction ring surrounds the spray plate and heating plate in the process chamber and has multiple first air passages arranged circumferentially, wherein the top of the extraction ring is higher than the bottom of the spray plate; and An exhaust back ring surrounds the exhaust face ring and has a top plate surrounding the top of the exhaust face ring, a bottom plate surrounding the bottom of the exhaust face ring, and a side plate surrounding the periphery of the exhaust face ring. The top plate maintains a ventilation gap with the upper cover plate of the process chamber above it and is provided with at least one second vent hole. The bottom plate and / or the side plate are provided with at least one exhaust hole to extract gas from between the spray plate and the heating plate through the plurality of first vent holes, and to extract gas from between the spray plate and the exhaust face ring through the at least one second vent hole and the ventilation gap.

2. The gas extraction ring of claim 1, wherein, The spray area at the center of the spray plate has a first diameter, and the first height of its bottom surface is smaller than the second height of the bottom surface of the limiting area at the edge of the spray plate. The second inner diameter of the limiting area is larger than the first diameter. The suction surface ring has a third inner diameter, which is larger than the first diameter and not larger than the second inner diameter, and the top of the suction surface ring is located at a third height, which is larger than the first height and smaller than the second height.

3. The gas extraction ring of claim 1, wherein, The width of the ventilation gap between the top plate of the extraction back ring and the upper cover plate of the process chamber is 1~3mm.

4. The gas extraction ring of claim 1, wherein, The suction back ring is made of ceramic material and is mounted on a mounting platform on the side wall of the process chamber. The mounting platform is provided with at least one protruding positioning pin. The suction ring further includes at least one ceramic gasket having a first notch adapted to the shape of the locating pin, and its height being not less than the height of the locating pin, to isolate the locating pin and the suction back ring above it. At least one corresponding position of the bottom plate of the vacuum back ring is provided with a second notch adapted to the shape of the ceramic gasket, which is used to cooperate with the at least one ceramic gasket to achieve the positioning of the vacuum back ring.

5. The gas extraction ring of claim 4, wherein, The ceramic gasket is a conical structure whose height increases radially along the suction back ring, and the second notch is a chamfered structure whose depth increases radially along the suction back ring, used to cooperate with the conical structure to achieve automatic alignment between the suction back ring and the process chamber.

6. The gas extraction ring of claim 1, wherein, The bottom plate and / or the side plate are provided with an air extraction hole, wherein... The size and / or density of each of the first air passages increases with their distance from the air extraction hole, and / or The top plate is provided with a plurality of second air passages, and the size and / or arrangement density of each second air passage increases with its distance from the air extraction hole.

7. The gas extraction ring of claim 1, wherein, The base plate and / or the side plate are provided with a plurality of air extraction holes, and each air extraction hole is evenly arranged along the circumference of the air extraction back ring, wherein, Each of the first air passages has the same size and is evenly distributed along the circumference of the air extraction surface ring, and / or The top plate is provided with a plurality of second air passages, and each second air passage has the same size and is evenly arranged along the circumference of the air extraction back ring.

8. A process chamber, comprising: include: A spray plate is used to introduce at least one gas required for the thin film deposition process into the process chamber. A heating plate is used to heat the wafer in the process chamber to facilitate the thin film deposition process; as well as The extraction ring as described in any one of claims 1 to 7 is used to extract gas from the process chamber.

9. A gas system characterized in that, include: Gas source, used to provide at least one gas required for the thin film deposition process; The spray plate is connected to the air source via at least one air inlet pipe for introducing the gas into the process chamber; The suction ring as described in any one of claims 1 to 7; and A vacuum pump is used to extract gas from the process chamber via the extraction ring.

10. A thin film deposition apparatus, characterized by, include: Gas source, used to provide at least one gas required for the thin film deposition process; The process chamber as described in claim 8 is used to house a wafer and to perform thin-film deposition processes on it using gas supplied by the gas source; and A vacuum pump is used to extract gas from the process chamber.

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