一种直流电弧等离子体化学气相沉积装置
By adding a mixing tank and a U-tube to the DC arc plasma chemical vapor deposition apparatus, the problems of poor mixing of hydrogen and methane and poor substrate cooling were solved, thus improving the growth quality of diamond films.
CN224513618UActive Publication Date: 2026-07-17LUOYANG YUXIN DIAMOND CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- LUOYANG YUXIN DIAMOND CO LTD
- Filing Date
- 2025-08-26
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In existing DC arc plasma chemical vapor deposition (DCAC) devices, the mixing effect of hydrogen and methane is poor, resulting in unsatisfactory substrate cooling and affecting the growth quality of diamond films.
Method used
A mixing tank was added above the reaction chamber, and a U-shaped tube was installed in the cooling assembly below the substrate to improve gas mixing and cooling.
Benefits of technology
It improved the quality of vapor deposition, promoted diamond growth, and met the needs of existing production.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224513618U_ABST
Abstract
本实用新型公开了一种直流电弧等离子体化学气相沉积装置，包括反应室，所述反应室内安装有阴极，以及安装有环绕阴极的圆筒状阳极，所述阳极和阴极接通电源后形成有等离子体射流，所述等离子体射流下方设置有衬底，所述衬底底部连接有冷却组件，所述冷却组件的左侧连接有冷却组件进水管，所述冷却组件的右侧连接有冷却组件出水管，所述反应室的顶部左侧设置有混合罐，所述混合罐的顶部连接有氢气管，所述混合罐的左侧中部连接有甲烷管，所述反应室的顶部右侧连接有氩气管。从而改善气相沉积质量，促进金刚石的生长，满足现有生产的需求，创造出较好的经济价值。
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