一种等离子体薄膜沉积设备
By employing a double-layer insulated pipe structure and a sealed cooling design in the plasma thin film deposition equipment, the problem of easy explosion and damage in the cleaning gas channel was solved, achieving higher sealing performance and equipment reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SUZHOU MAXWELL TECH CO LTD
- Filing Date
- 2025-08-06
- Publication Date
- 2026-07-17
AI Technical Summary
In existing plasma process equipment, the cleaning gas channel is prone to bursting and damage, leading to gas leakage, which poses a safety hazard and affects the reliability of the equipment.
It adopts a double-layer insulated pipe structure. The inner and outer pipes form a cleaning gas channel. The inner pipe is used to prevent current leakage, and the outer pipe is used for heat insulation. Combined with the sealing structure and cooling mechanism, it reduces the risk of explosion caused by sudden temperature changes.
It effectively reduces the risk of cleaning gas leakage, improves the sealing performance and service life of cleaning pipelines, and ensures the safety and reliability of the equipment.
Smart Images
Figure CN224513619U_ABST
Abstract
Claims
1. A plasma thin film deposition apparatus, the deposition apparatus comprising a process chamber and an air inlet mechanism communicating with the process chamber, wherein a gas diffusion assembly is provided inside the process chamber; Its features are, The air intake mechanism includes a main channel, a process gas channel, and a cleaning gas channel. One end of the main channel is connected to the gas diffusion assembly, and the other end of the main channel is connected to the process gas channel and the cleaning gas channel; The process gas channel includes a first insulating pipe, and the cleaning gas channel includes a second insulating pipe, the second insulating pipe including an inner pipe and an outer pipe sleeved around the inner pipe.
2. The plasma thin film deposition apparatus according to claim 1, characterized in that, The cleaning gas passage further includes at least two metal pipes respectively connected to both ends of the second insulating pipe; the air intake mechanism also includes a cooling mechanism for cooling the cleaning gas in the metal pipe located downstream of the second insulating pipe.
3. The plasma thin film deposition apparatus of claim 2, wherein, The two ends of the inner tube are respectively sealed and connected to the two metal pipes through a first sealing structure.
4. The plasma thin film deposition apparatus of claim 3, wherein, The first sealing structure includes a first annular groove formed on one end face of the metal pipe near the inner tube, and a first sealing ring disposed in the first annular groove.
5. The plasma thin film deposition apparatus of claim 2, wherein, The two ends of the outer tube are respectively sealed and connected to the two metal pipes through a second sealing structure.
6. The plasma thin film deposition apparatus of claim 5, wherein, The second sealing structure includes a second annular groove formed on the end face of the outer tube, and a second sealing ring disposed in the second annular groove.
7. The plasma thin film deposition apparatus of claim 1, wherein, The inner tube and the outer tube are spaced apart so that a hollow region is formed between them.
8. The plasma thin film deposition apparatus of claim 7, wherein, The outer tube has a through hole on its wall that connects the hollow area to the outside, and a cleaning gas detection sensor is installed in the through hole.
9. The apparatus of claim 2, wherein the plasma film deposition apparatus further comprises a gas source for supplying a gas to the plasma chamber. Also includes valves, The valve is located on the cleaning gas passage and on the metal pipe between the air inlet of the main passage and the second insulating pipe.
10. The apparatus of claim 2, wherein, The plasma thin film deposition equipment also includes a remote plasma source. The remote plasma source is connected to the metal pipe on the inlet side of the second insulated pipe. A pressure gauge is also provided on the metal pipe on the air inlet side of the second insulating pipe.