一种外延生长装置
By employing a non-contact interlocking structure and vent design in the epitaxial growth apparatus, the problem of substrate backside deposition caused by reactive gas diffusion was solved, improving the stability of the epitaxial process and the quality of the epitaxial layer, and extending the service life of the equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
- Filing Date
- 2025-06-25
- Publication Date
- 2026-07-17
AI Technical Summary
In existing epitaxial growth apparatuses, reactive gases can easily diffuse from the gap between the substrate and the preheating ring to the back of the substrate and the PIN mounting holes. This leads to unintended silicon deposition, resulting in substrate warping, particulate contamination, and PIN connection issues, which affect the quality of the epitaxial layer and the stability of the equipment.
A non-contact interlocking structure is adopted, which forms a gap by setting bosses and grooves between the preheating ring and the base, and sets vent holes on the base to block the diffusion path of reactive gases, thereby reducing the deposition on the back of the base and the deposits in the PIN mounting holes.
It effectively reduces deposition on the back of the substrate, lowers the risk of substrate deformation, prevents deposits from entering the PIN mounting holes, improves the stability of the epitaxial process and the service life of the equipment, reduces particulate contamination, and improves the quality of the epitaxial layer.
Smart Images
Figure CN224513682U_ABST
Abstract
Claims
1. An epitaxial growth apparatus, comprising a reaction chamber, wherein a base and a preheating ring are disposed within the reaction chamber, characterized in that: The base has a boss on its outer side, and the preheating ring has a groove on its inner wall. The groove is located above the boss, and there is a gap between the groove and the boss to form a non-contact fitting structure.
2. The epitaxial growth apparatus according to claim 1, wherein: The bottom of the groove and the top of the boss are provided with a first gap, which is set to 1.5 to 2.5 mm.
3. An epitaxial growth apparatus as claimed in claim 1 or 2, wherein: A second gap is provided between the inner wall of the preheating ring and the outer side of the base, and between the side wall of the groove and the outer side of the boss, the second gap being set to 8-10mm.
4. An epitaxial growth apparatus as claimed in claim 3, wherein: The outer side of the boss is provided with a turbulence groove.
5. An epitaxial growth apparatus as claimed in claim 4, wherein: The turbulence groove has a V-shaped structure.
6. The epitaxial growth apparatus of any one of claims 1-2 and 4-5, wherein: A third gap is provided between the preheating ring and the inner wall of the reaction chamber, and the third gap is set to 3-5 mm.
7. The epitaxial growth apparatus of any of claims 1-2 and 4-5, wherein: The base has multiple ventilation holes on its pit, which together form a ventilation area.
8. An epitaxial growth apparatus as claimed in claim 7, wherein: The diameter of the vent is set to 3-4 mm.
9. The epitaxial growth apparatus of claim 7, wherein: The ventilation area is located in the middle of the pit, occupying 1 / 2 to 2 / 3 of the pit.
10. An epitaxial growth apparatus as claimed in claim 8 or 9, wherein: The vent holes are spaced circumferentially along the pit within the venting area to form multiple venting rings, which are spaced radially along the pit.