Crystal growth crucible with built-in additive crucible
By setting up an additive crucible with inner and outer dual chambers inside the crystal growth crucible and controlling the additive release rate, the high cost and crystal quality problems caused by increasing the quality of additives in the prior art are solved, and crystal growth that balances cost-effectiveness and quality is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TONGWEI MICROELECTRONICS CO LTD
- Filing Date
- 2025-07-28
- Publication Date
- 2026-07-17
Smart Images
Figure CN224513684U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of crystal growth technology, and more specifically, to a crystal growth crucible with a built-in additive crucible. Background Technology
[0002] In related technologies, silicon carbide crystal growth apparatuses face the risk of phase transitions during the early or later stages of crystal growth. Therefore, additives (such as cerium silicide) are typically added to reduce the probability of phase transitions. The phase transition in the later stages of crystal growth in these technologies is related to the quality (weight or quantity) and consumption rate of the additives.
[0003] However, existing technologies generally improve the phase transition in later crystal growth by increasing the quality of additives. Although this can suppress the phase transition, the cost is too high and it is easy to bring other adverse effects. Utility Model Content
[0004] The purpose of this invention is to provide a crystal growth crucible with built-in additives, which can improve the crystal phase transformation in the later stage of crystal growth, and has the characteristics of low cost and no other adverse effects.
[0005] The embodiments of this utility model can be implemented as follows:
[0006] In a first aspect, this utility model provides a crystal growth crucible with a built-in additive crucible, comprising:
[0007] A crucible body for filling silicon carbide powder;
[0008] An additive crucible is provided inside the crucible body. An annular partition is provided inside the additive crucible to divide the inner cavity of the additive crucible into an inner chamber and an outer chamber. The outer chamber is arranged around the inner chamber. The inner chamber and the outer chamber are respectively used to fill additives.
[0009] In an optional embodiment, the additive crucible includes a crucible body and a crucible lid. The top of the crucible body has an opening, and the crucible lid covers the top of the crucible body and closes the opening. A partition ring is provided inside the crucible body, and an inner connecting ring is provided on the crucible lid. The partition ring and the inner connecting ring are connected to form the annular partition.
[0010] In an optional embodiment, the separator ring and the inner connecting ring are threaded together.
[0011] In an optional embodiment, the inner wall of the separator ring is provided with an internal thread, and the outer wall of the inner connecting ring is provided with an external thread that mates with the internal thread.
[0012] In an optional embodiment, the crucible lid is provided with an outer connecting ring, which is connected to the side wall of the crucible body.
[0013] In an optional embodiment, the connection method between the outer connecting ring and the crucible body is the same as the connection method between the inner connecting ring and the separator ring.
[0014] In an alternative embodiment, the top of the separator ring is lower than the top of the crucible body.
[0015] In an optional embodiment, the inner chamber and the outer chamber are filled with different masses of additives.
[0016] In an optional embodiment, the additive is cerium silicide.
[0017] In an optional embodiment, the additive crucibles are multiple and distributed within the silicon carbide powder.
[0018] The beneficial effects of the crystal growth crucible with built-in additives provided in this embodiment of the invention include:
[0019] This crystal growth crucible with built-in additive crucible includes a crucible body and an additive crucible. The crucible body is used to fill silicon carbide powder, and the additive crucible is placed inside the crucible body. An annular partition is provided inside the additive crucible, dividing its inner cavity into an inner chamber and an outer chamber. The outer chamber surrounds the inner chamber, and both chambers are used to hold additives. By incorporating an additive crucible with a dual-chamber structure within the crucible body, the additive in the inner chamber must first pass through the annular partition into the outer chamber, and then through the side wall of the crucible body into the crucible body. This effectively reduces the rate at which additives are released from the additive crucible, thus mitigating the problem of insufficient additives in the later stages of crystal growth caused by rapid additive release. This not only effectively reduces crystal growth costs but also avoids other problems detrimental to crystal quality, ensuring the quality of crystal growth. Attached Figure Description
[0020] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 This is a schematic diagram of the crystal growth crucible with built-in additives provided in this embodiment;
[0022] Figure 2 This is a schematic diagram of the additive crucible provided in this embodiment.
[0023] Icons: 100-Crucible body; 110-Silicon carbide powder; 200-Additive crucible; 210-Crucible body; 212-Separator ring; 214-Internal thread; 220-Crucible lid; 222-Inner connecting ring; 223-External thread; 224-Outer connecting ring; 230-Annular separator; 240-Inner chamber; 250-Outer chamber; 260-Additive. Detailed Implementation
[0024] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.
[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0026] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.
[0027] In the description of this utility model, it should be noted that if terms such as "upper," "lower," "inner," or "outer" are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the utility model product is usually placed during use, they are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0028] Furthermore, the terms "first" and "second" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.
[0029] It should be noted that, where there is no conflict, the features in the embodiments of this utility model can be combined with each other.
[0030] In the growth of silicon carbide crystals based on the PVT method, phase transitions commonly occur in the early or late stages of growth, affecting crystal growth quality. Therefore, additives such as cerium silicide are typically added to the silicon carbide crystal growth apparatus to suppress phase transitions during growth, reduce the probability of phase transitions, and thus optimize crystal growth quality. However, in related technologies, the rapid release rate of these additives leads to their premature consumption, resulting in a lack of additive release in the later stages of silicon carbide crystal growth. This increases the probability of phase transitions and negatively impacts crystal growth quality.
[0031] In related technologies, silicon carbide crystal growth apparatuses typically employ methods such as increasing the mass of additives (e.g., cerium silicide) to ensure that additives are released even in the later stages of crystal growth, thereby reducing the probability of crystal phase transitions and guaranteeing crystal growth quality. However, this approach increases the cost of crystal growth, and excessive additives can also cause other adverse effects on crystal growth, impacting crystal quality.
[0032] In view of the above situation, the present invention provides a crystal growth crucible with built-in additive crucible. The crucible with internal double chamber structure is used to fill the additive, which can effectively suppress the release rate of the additive. Thus, without increasing the mass of the additive, the additive is released in the later stage of crystal growth, thereby reducing the probability of crystal phase transformation in the later stage of crystal growth and effectively ensuring the quality of crystal growth.
[0033] Please refer to Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the crystal growth crucible with built-in additives provided in this embodiment. Figure 2 This is a schematic diagram of the additive crucible provided in this embodiment.
[0034] This invention provides a crystal growth crucible with a built-in additive crucible, which can be used for the growth of silicon carbide crystals based on the PVT method.
[0035] In detail, the crystal growth crucible with built-in additive crucible includes a crucible body 100 and an additive crucible 200. The crucible body 100 is used to fill silicon carbide powder 110, and the additive crucible 200 is placed inside the crucible body 100. An annular partition 230 is provided inside the additive crucible 200, which divides the inner cavity of the additive crucible 200 into an inner cavity 240 and an outer cavity 250. The outer cavity 250 is arranged around the inner cavity 240. The inner cavity 240 and the outer cavity 250 are respectively filled with additive 260.
[0036] By providing an additive crucible 200 with an inner and outer dual-chamber structure within the crucible body 100 of the crystal growth crucible, the additive 260 filled in the inner chamber 240 of the additive crucible 200 must first pass through the annular separator 230 into the outer chamber 250, and then pass through the side wall of the crucible body 210 into the crucible body 100. This effectively reduces the rate at which the additive 260 is released from the additive crucible 200, thereby improving the problem of insufficient additive 260 in the later stages of crystal growth caused by excessively rapid release of the additive 260. This not only effectively reduces the cost of crystal growth but also avoids other problems that are detrimental to crystal quality, ensuring the quality of crystal growth.
[0037] The material of the additive crucible 200 can be selected as needed. In this embodiment, the additive crucible 200 is made of graphite so that the additive 260 inside can be released into the crucible body 100 through the porous structure of the graphite material.
[0038] The number of additive crucibles 200 can be set as needed. In this embodiment, there are multiple additive crucibles 200 distributed within the silicon carbide powder 110. This increases the release position of the additive 260 and improves the uniformity of the release of the additive 260 within the silicon carbide powder 110, thereby enhancing the suppression effect on crystal phase transition.
[0039] The additive crucible 200 includes a crucible body 210 and a crucible lid 220 that are interconnected. The top of the crucible body 210 has an opening, and a partition ring 212 is provided inside the crucible body 210. The partition ring 212 is connected to the bottom wall of the crucible body 210 and coincides with the axis of the peripheral wall of the crucible body 210.
[0040] The crucible lid 220 is placed on top of the crucible body 210 and closes the opening. The crucible lid 220 is provided with an outer connecting ring 224 and an inner connecting ring 222. The inner connecting ring 222 is connected to the partition ring 212 to form an annular partition 230, and the outer connecting ring 224 is connected to the side wall of the crucible body 210.
[0041] The inner connecting ring 222 and the partition ring 212 can be connected in different ways as needed. In this embodiment, the partition ring 212 and the inner connecting ring 222 are threaded together. Threaded connections are simple to operate and provide stable connections.
[0042] In detail, the inner wall of the separator ring 212 is provided with an internal thread 214, and the outer wall of the inner connecting ring 222 is provided with an external thread 223 that mates with the internal thread 214. It should be noted that in other embodiments, the separator ring 212 may also be provided with an external thread, and the inner wall of the inner connecting ring 222 may be provided with an internal thread that mates with the external thread.
[0043] Furthermore, the top of the separating ring 212 is lower than the top of the crucible body 210, that is, the top of the separating ring 212 is sunk into the inner cavity of the crucible body 210, so as to facilitate the design and installation of the crucible cover 220.
[0044] The outer connecting ring 224 and the side wall of the crucible body 210 can also be connected in different ways as needed. In this embodiment, the connection method between the outer connecting ring 224 and the crucible body 210 is the same as the connection method between the inner connecting ring 222 and the partition ring 212, that is, both are connected by threads. This setting can facilitate the uniformity and convenience of the processing of the crucible body 210 and the crucible cover 220, and facilitate the use of the additive crucible 200.
[0045] It is understood that in other embodiments, the connection method between the outer connecting ring 224 and the side wall of the crucible body 210 and the connection method between the inner connecting ring 222 and the partition ring 212 may also be different. For example, the outer connecting ring 224 and the side wall of the crucible body 210 may be connected by an interference fit; the outer connecting ring 224 and the side wall of the crucible body 210 and the inner connecting ring 222 and the partition ring 212 may also be connected by a snap-fit.
[0046] The working principle and process of this crystal growth crucible with built-in additives are as follows:
[0047] First, a certain mass of additive 260 (such as cerium silicide) is filled into the inner chamber 240 and outer chamber 250 of the additive crucible 200. The masses of additive 260 in the two chambers can be different, and the specific ratio can be set according to actual needs to achieve different release rates. Then, the additive crucible 200 is filled into the crucible body 100 along with the silicon carbide powder 110, and then heating can begin to grow crystals.
[0048] During crystal growth, the additive 260 located in the outer chamber 250 can be released into the crucible body 100 through the crucible body 210 during the early and middle stages of crystal growth. However, some of the additive 260 located in the inner chamber 240 needs to first pass through the annular separator 230 into the outer chamber 250, and then be released from the outer chamber 250 through the crucible body 210 into the crucible body 100. This slows down the release rate of the additive 260, ensuring that additive 260 continues to be released from the additive crucible 200 in the later stages of crystal growth, thereby effectively suppressing crystal phase transitions and improving crystal growth quality. The crystal growth crucible with a built-in additive crucible provided in this embodiment does not require increasing the mass of the additive 260, thus keeping costs under control and avoiding other problems detrimental to crystal quality.
[0049] The above are merely specific embodiments of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model.
Claims
1. A crystal growing crucible with built-in additives, characterized by, include: Crucible body (100), the crucible body (100) is used to fill silicon carbide powder (110); An additive crucible (200) is placed inside the crucible body (100). An annular partition (230) is provided inside the additive crucible (200). The annular partition (230) divides the inner cavity of the additive crucible (200) into an inner chamber (240) and an outer chamber (250). The outer chamber (250) surrounds the inner chamber (240). The inner chamber (240) and the outer chamber (250) are respectively filled with additives (260).
2. The crystal growth crucible with built-in additives according to claim 1, characterized in that, The additive crucible (200) includes a crucible body (210) and a crucible lid (220). The top of the crucible body (210) has an opening. The crucible lid (220) covers the top of the crucible body (210) and closes the opening. A partition ring (212) is provided inside the crucible body (210). An inner connecting ring (222) is provided on the crucible lid (220). The partition ring (212) and the inner connecting ring (222) are connected to form the annular partition (230).
3. The built-in additive crucible for crystal growth according to claim 2, wherein The separator ring (212) and the inner connecting ring (222) are threaded together.
4. The built-in additive crucible for crystal growth according to claim 3, wherein The inner wall of the separator ring (212) is provided with an internal thread (214), and the outer wall of the inner connecting ring (222) is provided with an external thread (223) that mates with the internal thread (214).
5. The built-in additive crucible for crystal growth according to claim 2, wherein The crucible lid (220) is provided with an outer connecting ring (224), which is connected to the side wall of the crucible body (210).
6. The built-in-additive crucible for crystal growth according to claim 5, wherein The connection method between the outer connecting ring (224) and the crucible body (210) is the same as the connection method between the inner connecting ring (222) and the separator ring (212).
7. The built-in additive crucible for crystal growth according to claim 2, wherein The top of the separator ring (212) is lower than the top of the crucible body (210).
8. The built-in-additive crucible for crystal growth according to claim 1, wherein The inner chamber (240) and the outer chamber (250) are filled with additives (260) of different qualities.
9. The built-in additive crucible for crystal growth according to claim 1, wherein The additive (260) is cerium silicide.
10. The built-in-additive crucible for crystal growth according to claim 1, wherein The additive crucibles (200) are multiple and distributed within the silicon carbide powder (110).