Gas delivery pipelines and semiconductor processing devices

Abstract

This invention discloses a gas delivery pipeline and a semiconductor processing device. The gas delivery pipeline is used to deliver process gas into the reaction chamber of the semiconductor processing device. The gas delivery pipeline includes a buffer device, which includes a main pipeline. A first Tesla valve is provided on the main pipeline. The high-damping flow direction of the first Tesla valve is the same as the gas flow direction in the main pipeline. This invention can effectively buffer when the airflow fluctuates, keeping the airflow entering the reaction chamber uniform, thereby improving the gas uniformity in the reaction chamber, optimizing the process effect, and has a simple structure that is not easily damaged.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing, and in particular to a gas conveying pipeline and a semiconductor processing device. Background Technology

[0002] In semiconductor manufacturing, the input gas is a core requirement for many critical processes. These gases participate in physical or chemical reactions to achieve functions such as material deposition, etching, doping, and cleaning, directly affecting chip performance, yield, and reliability. Semiconductor processing equipment has extremely strict requirements for the purity, flow rate, and pressure of gases; even minute gas impurities or parameter fluctuations can lead to chip defects. Therefore, the gas delivery system is one of the core components of semiconductor equipment, significantly impacting process stability and yield.

[0003] In gas delivery systems, buffers are used to stabilize gas pressure and flow rate, preventing pressure and flow fluctuations from affecting process uniformity. Current buffer designs have significant flaws. The buffer's piping structure is not straight-through; the pipe diameter suddenly increases at critical points, leading to uneven gas velocity distribution upon entry, easily generating eddies or stagnant zones, thus affecting the uniform diffusion of gas within the reaction chamber. Secondly, current buffers have complex internal structures, relying on mechanical components such as spring assemblies to absorb energy through friction to achieve their buffering function. This design not only increases manufacturing costs and maintenance difficulty, but also, as gas flow rates increase, exacerbate frictional losses, significantly reducing the buffer's lifespan and requiring frequent replacement.

[0004] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content

[0005] The purpose of this invention is to provide a gas delivery pipeline and a semiconductor processing device, which has a better buffering effect, can effectively suppress the impact of increased airflow on process uniformity, and the buffer has a simple structure and is not easily damaged.

[0006] To achieve the above objectives, this utility model proposes a gas delivery pipeline for delivering process gas into the reaction chamber of a semiconductor processing device. The gas delivery pipeline includes a buffer device, which includes a main pipeline. A first Tesla valve is provided on the main pipeline, and the high-damping flow direction of the first Tesla valve is the same as the gas flow direction in the main pipeline.

[0007] In one embodiment, the buffer device further includes a return pipeline having a first end and a second end, the first end being connected to a main pipeline downstream of the first Tesla valve, and the second end being connected to a main pipeline upstream of the first Tesla valve, wherein airflow in the return pipeline flows unidirectionally from the first end to the second end.

[0008] In one embodiment, the gas flowing from the second end of the return line into the main line flows in the same direction as the gas flowing in the main line.

[0009] In one embodiment, at least one second Tesla valve is provided on the return line, and the low-damping flow direction of the second Tesla valve is from the first end to the second end of the return line.

[0010] In one embodiment, a check valve is provided between the second end of the return pipeline and the main pipeline upstream of the first Tesla valve, the check valve preventing gas in the main pipeline from entering the return pipeline through the second end.

[0011] In one embodiment, a cleanup device is provided between the second end of the return line and the main line upstream of the first Tesla valve.

[0012] In one embodiment, the device further includes a first flow meter and a second flow meter, wherein the first flow meter is disposed upstream of the buffer device and the second flow meter is disposed downstream of the buffer device.

[0013] In one embodiment, the angle between the airflow direction at the first end of the return pipe and the airflow direction in the main pipe is an obtuse angle, and the angle between the airflow direction at the second end of the return pipe and the airflow direction in the main pipe is a right angle or an acute angle.

[0014] In one embodiment, the gas delivery pipeline further includes a main pipeline and several branch pipelines, each of the branch pipelines being connected to the main pipeline; the buffer device is provided on the main pipeline, or each of the branch pipelines is provided with a buffer device.

[0015] In one embodiment, the return line makes a smooth bend from the first end to the second end.

[0016] This utility model also proposes a semiconductor processing device, comprising:

[0017] Several reaction chambers;

[0018] The gas delivery pipeline has several branch pipelines that are respectively connected to several reaction chambers.

[0019] In one embodiment, the semiconductor processing device is a plasma processing device.

[0020] Compared with the prior art, the gas conveying pipeline and semiconductor processing device of this utility model have the following advantages and beneficial effects:

[0021] The gas delivery pipeline in this scheme uses a Tesla valve as a buffer device, which has a simple structure and is not easily damaged, requiring no frequent maintenance. The high damping direction of the Tesla valve is set to be the same as the gas flow direction in the gas delivery pipeline, which effectively buffers the gas flow when the airflow fluctuates, keeping the airflow entering the reaction chamber uniform, thereby improving the gas uniformity in the reaction chamber and optimizing the process effect.

[0022] This solution sets up a return pipeline in parallel with the main pipeline where the Tesla valve is located. When backflow occurs downstream of the buffer device, the backflow gas flows into the return pipeline to prevent backflow from affecting the stability of the normal airflow. This solution further sets up a Tesla valve in the return pipeline and makes the low-damping direction of the Tesla valve the same as the backflow direction to accelerate the backflow and prevent backflow from clogging the pipeline. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of a buffer;

[0024] Figure 2 This is a schematic diagram of a semiconductor processing device according to the present invention;

[0025] Figure 3 This is a schematic diagram of a buffer device according to the present invention;

[0026] Figure 4 This is a schematic diagram of the airflow direction within a buffer device according to the present invention;

[0027] Figure 5 This is a schematic diagram of another buffer device of the present invention;

[0028] Figure 6 This is a schematic diagram of another buffer device of this utility model;

[0029] Figure 7 This is a schematic diagram of another semiconductor processing device according to the present invention. Detailed Implementation

[0030] The gas conveying pipeline and semiconductor processing device proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, only for the purpose of conveniently and clearly illustrating the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.

[0031] like Figure 1 As shown, buffer 1 is a non-straight-through type, with different diameters at the front and rear. Buffer 1 also contains mechanical components such as spring assembly 2, resulting in a complex structure. When the airflow suddenly increases, the increased airflow enters buffer 1 and rubs against the mechanical components like spring assembly 2, achieving a buffering effect. However, because the diameter of buffer 1 increases at a critical point, it easily leads to uneven gas flow velocity, which in turn affects the uniformity of the gas entering the reaction chamber. Furthermore, since buffer 1 achieves buffering through a friction mechanism, as the gas flow velocity increases, frictional wear intensifies, accelerating the damage to buffer 1, reducing its service life, and requiring frequent replacement.

[0032] To address this problem, this invention proposes a gas delivery pipeline and a semiconductor processing device. A Tesla valve is used as a buffer, with its high-damping direction aligned with the gas flow direction within the pipeline. When the gas flow suddenly increases, the Tesla valve effectively reduces the flow, achieving buffering and maintaining a uniform gas flow into the reaction chamber. This improves gas uniformity within the reaction chamber and optimizes the process performance. Furthermore, using a Tesla valve as a buffer results in a simple structure that is not easily damaged and requires minimal maintenance.

[0033] like Figure 2 As shown, the semiconductor processing apparatus provided in this embodiment is a plasma processing apparatus, including a gas supply device 100, a gas delivery pipe 200, and a reaction chamber 300. The gas supply device 100 is used to provide one or more process gases. The gas delivery pipe 200 is connected to the gas supply device 100 and is used to deliver the process gases to the reaction chamber 200. The reaction chamber 200 is used to process the wafer, such as plasma processing.

[0034] The semiconductor processing device includes one or more reaction chambers 300. The gas delivery conduit 200 includes a main conduit 250 and at least one branch conduit 260, the number of branch conduits 260 being the same as the number of reaction chambers 300. The gas supply device 100 is directly connected to the main conduit 250. The first end of each branch conduit 260 is connected to the main conduit 250, thereby indirectly connecting to the gas supply device 100. The second end of each branch conduit 260 is connected to a reaction chamber 300, with each branch conduit 260 and reaction chamber 300 connected in a one-to-one correspondence.

[0035] The branch pipeline 260 is equipped with components such as a branch switch valve 210, a buffer device 220, a pneumatic valve 230, and a mass flow controller 240. The branch switch valve 210 is located between the branch pipeline 260 and the main pipeline 250 and is used to control the gas flow in and out of the branch pipeline 260. The pneumatic valve 230 is used to control the gas flow rate and pressure entering the reaction chamber 300. The mass flow controller 240 is used to accurately measure and control the gas flow rate entering the reaction chamber 300. Generally, the mass flow controller 240 is located between the pneumatic valve 230 and the reaction chamber 300. In other embodiments, the branch pipeline 260 is also equipped with various other components to control the gas, and this utility model does not limit this.

[0036] In this embodiment, the buffer device 220 is located between the branch switch valve 210 and the pneumatic valve 230, and is used to stabilize instantaneous pressure fluctuations or flow pulses in the branch pipeline 260 where it is located. For example, when the gas flow rate entering the branch pipeline 260 suddenly increases, such as when the branch switch valve 210 suddenly opens, the gas pressure suddenly increases, and a large flow of gas enters the buffer device 220. The buffer device 220 can alleviate the instantaneous flow peak, and the gas flow and pressure output from the buffer device 220 become smaller and the flow rate becomes more uniform. This is beneficial for the gas to react fully after entering the reaction chamber 300, and also avoids the unsatisfactory process effect caused by unstable gas flow entering the reaction chamber 300.

[0037] In other embodiments, the buffer device 220 may also be located at other locations on the branch conduit 260.

[0038] like Figure 3 As shown, the buffer device 220 includes a main pipeline 221, on which a first Tesla valve 222 is provided. The high-damping flow direction of the first Tesla valve 222 is the same as the gas flow direction within the main pipeline 221. Figure 4As shown, the first Tesla valve 222 has a straight channel 2221 and multiple curved channels 2222. The straight channel 2221 is in the same direction as the main channel 221. The curved channels 2222 are distributed on the side wall of the straight channel 2221. After the gas enters from the straight channel 2221, part of the gas continues to flow along the straight channel 2221, while the other part of the gas enters the curved channels 2222. When the gas flows out from the curved channels 2222, it impacts the airflow in the straight channel 2221, causing a loss of gas kinetic energy. After passing through several curved channels 2222, the gas flow rate will be significantly reduced, which has the effect of buffering the instantaneous fluctuation of the airflow.

[0039] The number of curved channels 2222, the length of straight channels 2221, and the angle between curved channels 2222 and straight channels 2221 all affect the damping magnitude of the first Tesla valve 222, i.e., the buffering strength of the first Tesla valve 222 for airflow. In some embodiments, first Tesla valves 222 with different damping are selected according to different gas flow rates and process requirements to achieve different buffering effects. In more embodiments, first Tesla valves 222 made of different materials are used according to different types of gas to improve their service life and avoid frequent replacements; when different gases flow in different branch pipelines 260, first Tesla valves 222 made of different materials can be used accordingly.

[0040] Continue as Figure 3 As shown, a first flow meter 223 is installed upstream of the buffer device 220, and a second flow meter 224 is installed downstream of the buffer device 220, respectively used to monitor the gas flow rate entering and exiting the buffer device 220. By monitoring the flow rate before and after buffering in real time, the buffering effect of the buffer device 220 can be directly detected to verify its accuracy, thereby allowing for the replacement of a more suitable first Tesla valve 222. The upstream and downstream refer to the location where gas flows into the reaction chamber 300, with the gas supply device 100 flowing in the direction of flow as the reference; the location where gas flows in is upstream, and the location where gas flows out is downstream.

[0041] like Figure 5As shown, another buffer device 220 provided in this embodiment includes a main pipeline 221 and a return pipeline 400 connected in parallel. The main pipeline 221 is the same as in the above embodiment, and a first Tesla valve 222 is provided on it to play a buffering role. The return pipeline 400 has a first end 401 and a second end 405. The first end 401 is connected to the main pipeline 221 downstream of the first Tesla valve 222 and is located near the second flow meter 224. The second end 405 is connected to the main pipeline 221 upstream of the first Tesla valve 222 and is located near the first flow meter 223. In this embodiment, the first end 401 is connected upstream of the second flow meter 224, and the second end 405 is connected downstream of the first flow meter 223. From the first end 401 to the second end 405, the return pipeline 400 sequentially includes a first pipe section 402, a second pipe section 403, and a third pipe section 404.

[0042] When the pressure distribution within branch pipeline 260 changes, for example, if branch switch valve 210 or pneumatic valve 230 malfunctions, gas may experience backflow. This backflow occurs from pneumatic valve 230 to branch switch valve 210, and since the backflow is opposite to the normal airflow direction, it affects the stability of the normal airflow within the pipeline. Normal airflow refers to the airflow from gas supply device 100 to reaction chamber 300. This embodiment effectively suppresses the impact of backflow on the stability of the normal airflow by setting up the backflow pipeline 400. Specifically, when backflow occurs, the backflow gas enters buffer device 220 downstream of it. Since the main pipeline 221 still has normal airflow, the backflow gas has difficulty entering the main pipeline 221, and thus most of it enters the backflow pipeline 400 connected in parallel with the main pipeline 221, avoiding the impact of backflow on the normal airflow. After passing through the return pipe 400, the return gas returns to the main pipe 221 from the second end 405. The flow direction of the return gas entering the main pipe 221 is set to be the same as the flow direction of the gas in the main pipe 221, so as to reduce the impact of the return on the normal airflow direction.

[0043] In one embodiment, the airflow direction at the second end 405 is perpendicular to or at an acute angle to the airflow direction within the main pipeline 221, thereby preventing the return flow direction entering the main pipeline 221 from having a component opposite to the normal airflow and preventing large fluctuations in the normal airflow. In this embodiment, the third pipe section 404 is configured to be perpendicular to the main pipeline 221.

[0044] In one embodiment, the return conduit 400 makes a smooth bend from the first end 401 to the second end 405, i.e., without sharp corners, thus reducing return resistance. Figure 6 For example, the transition between the first pipe segment 402, the second pipe segment 403, and the third pipe segment 404 is a smooth arc transition (not shown), rather than... Figure 6 The corner connection.

[0045] Furthermore, a check valve 407 is provided between the second end 405 and the main pipeline 221 upstream of the first Tesla valve 222. The check valve 407 is unidirectional, allowing backflow only from the second end 405 to the main pipeline 221 and then into the first Tesla valve 222. It does not allow backflow from the main pipeline 221 upstream of the first Tesla valve 222 to the second end 405, thus preventing normal airflow in the main pipeline 221 from flowing from the second end 405 into the return pipeline 400.

[0046] A purification device 406 is also provided between the second end 405 and the main pipeline 221 upstream of the first Tesla valve 222. This purification device 406 is located between the check valve 407 and the second end 405. Since the gas downstream of the buffer device 220 may contain impurities or reaction byproducts, if backflow occurs, the backflow gas will carry these impurities or reaction byproducts backflow together. After re-entering the main pipeline 221, it will affect the purity of the process gas, and thus affect the processing yield in the reaction chamber 300. By setting up the purification device 406 to remove impurities and reaction byproducts from the backflow gas, the airflow in the main pipeline 221 can be effectively prevented from being contaminated. In some embodiments, the purification device 406 removes impurities by means of a chemical reaction. Since the impurities and byproducts contained in different processes may be different, the structure of the purification device 406 needs to be set accordingly. This utility model does not limit the specific structure of the purification device 406.

[0047] In addition, when the return gas passes through the impurity removal device 406, the impurity removal device 406 can also block the return gas to a certain extent, slow down the return gas, and reduce the impact of the return gas on the normal flow of gas in the main pipeline 221.

[0048] In this embodiment, the angle between the return direction at the first end 401 and the normal airflow direction in the main pipeline 221 is an obtuse angle. That is, the return flow at the first end 401 has a component opposite to the airflow direction in the main pipeline 221, which means that the return flow at the first end 401 has a component with the same return direction as the return flow into the buffer device 220. Thus, when the gas downstream of the buffer device 220 returns, if it is difficult to enter the main pipeline 221, the return gas can easily pass through the first end 401 and enter the first pipe section 402. Furthermore, by setting this angle to an obtuse angle, it is also possible to prevent the normal airflow from entering the first pipe section 402 and causing a loss of normal airflow.

[0049] The first pipe section 402 is equipped with a second Tesla valve. The low-damping flow direction of the second Tesla valve is from the first end 401 to the second end 405 of the return pipe 400. Therefore, the second Tesla valve accelerates the incoming return gas, allowing the return gas to pass through the return pipe 400 quickly, thus preventing the return gas from blocking the connection between the return pipe 400 and the main pipe 221 and affecting the normal airflow or entering the first Tesla valve 222.

[0050] In other embodiments, a second Tesla valve is also provided in the second pipe section 403 and the third pipe section 404, with its low-damping flow direction also from the first end 401 to the second end 405, to further accelerate the return gas. In other embodiments, providing a second Tesla valve in any one or more of the first pipe section 402, the second pipe section 403, and the third pipe section 404 can all serve to accelerate the return gas.

[0051] like Figure 6 As shown, another buffer device 220 provided in this embodiment also includes a main pipeline 221 and a return pipeline 400. In this embodiment, the angle between the return direction in the third pipe section 404 and the airflow direction in the main pipeline 221 is an acute angle, that is, the return in the third pipe section 404 has the same component as the airflow direction in the main pipeline 221. Therefore, the return gas entering the main pipeline 221 from the third pipe section 404 will not bring a reverse impact to the normal airflow and cause airflow turbulence.

[0052] In this embodiment, the first pipe section 402, the second pipe section 403, and the third pipe section 404 are all equipped with second Tesla valves, which accelerate the return gas. The return pipe 400 in this embodiment can be regarded as a curved channel of the low-damping direction Tesla valve, wherein the second pipe section 403 is parallel to the main pipe 221, and the first pipe section 402 and the third pipe section 404 are parallel. However, this is not a limitation of this utility model. In other embodiments, the direction of each pipe section can be arbitrarily set.

[0053] In one embodiment, the backflow in the first end 401 has the same component as the downstream backflow direction of the buffer device 220, and the backflow in the second end 405 has the same component as the upstream normal airflow direction of the buffer device 220.

[0054] In this embodiment, each branch pipe 260 is provided with a buffer device 220 to stabilize airflow fluctuations within the branch pipe 260 where the buffer device 220 is located. In some other embodiments, buffer devices 220 are provided in one or more branch pipes 260 that require buffering, as needed.

[0055] In another embodiment, such as Figure 7 As shown, a buffer device 220 is provided on the main pipeline 250 to stabilize airflow fluctuations throughout the main pipeline 250. The buffer device 220 is located between the gas supply device 110 and the first downstream branch pipeline 260. In other embodiments, buffer devices 220 may also be provided on both the main pipeline 250 and each branch pipeline 260.

[0056] This invention, by setting up the aforementioned buffer device, gas delivery pipeline, and semiconductor processing device, employs a first Tesla valve as a buffer, and sets the high-damping direction of the first Tesla valve to be the same as the direction from the gas supply device to the reaction chamber. This results in a simple structure with good buffering effect, thereby optimizing the process performance of the semiconductor processing device. The buffer device also includes a return pipeline to prevent the return gas from impacting the normal airflow and causing airflow instability. Furthermore, a second Tesla valve is used in the return pipeline, with the return direction aligned with the low-damping direction of the second Tesla valve, thereby accelerating the return flow and preventing the return gas from blocking the normal airflow, which helps maintain the airflow stability of the semiconductor processing device.

[0057] Understandably, the terms "high-damping direction" and "high-damping flow direction" refer to, for example, Figure 3 , Figure 4 The flow direction of the Tesla valve from left to right means that when fluid flows through a Tesla valve in this direction, it will be diverted from the straight pipe 2221 into the curved channel 2222 and then guided back to the straight pipe 2221 and flow in the opposite direction, thereby increasing the flow resistance. The direction opposite to the "high damping direction" or "high damping flow direction" is the "low damping direction" or "low damping flow direction".

[0058] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas delivery conduit for delivering a process gas into a reaction chamber of a semiconductor processing apparatus, characterized by, The gas delivery pipeline includes a buffer device, which includes a main pipeline. A first Tesla valve is provided on the main pipeline, and the high-damping flow direction of the first Tesla valve is the same as the gas flow direction in the main pipeline.

2. The gas delivery conduit of claim 1, wherein, The buffer device further includes a return pipeline having a first end and a second end. The first end is connected to a main pipeline downstream of the first Tesla valve, and the second end is connected to a main pipeline upstream of the first Tesla valve. The airflow in the return pipeline flows unidirectionally from the first end to the second end.

3. The gas delivery conduit of claim 2, wherein, At least one second Tesla valve is provided on the return pipeline, and the low-damping flow direction of the second Tesla valve is from the first end to the second end of the return pipeline.

4. The gas delivery conduit of claim 2, wherein, A check valve is provided between the second end of the return pipeline and the main pipeline upstream of the first Tesla valve. The check valve prevents gas in the main pipeline from entering the return pipeline through the second end.

5. The gas delivery conduit of claim 2, wherein, A cleaning device is provided between the second end of the return pipeline and the main pipeline upstream of the first Tesla valve.

6. The gas transmission pipeline as described in claim 1, characterized in that, It also includes a first flow meter and a second flow meter, with the first flow meter located upstream of the buffer device and the second flow meter located downstream of the buffer device.

7. The gas delivery conduit of claim 2, wherein, The angle between the airflow direction at the first end of the return pipe and the airflow direction in the main pipe is an obtuse angle, and the angle between the airflow direction at the second end of the return pipe and the airflow direction in the main pipe is a right angle or an acute angle.

8. The gas delivery conduit of claim 1, wherein, The gas transmission pipeline also includes a main pipeline and several branch pipelines, each of which is connected to the main pipeline; The buffer device is provided on the main pipeline, or each of the branch pipelines is provided with a buffer device.

9. The gas delivery conduit of claim 7, wherein, The return pipeline makes a smooth bend from the first end to the second end.

10. A semiconductor processing apparatus, characterized by comprising: include: Several reaction chambers; The gas delivery pipeline as described in any one of claims 1-9, wherein a plurality of branch pipelines of the gas delivery pipeline are respectively connected to a plurality of the reaction chambers.

11. The semiconductor processing apparatus of claim 10, wherein The semiconductor processing device is a plasma processing device.

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