A structure of an ultra-thin semiconductor temperature sensor probe

Abstract

This utility model discloses an ultra-thin semiconductor temperature sensor probe structure, relating to the field of temperature sensor technology. It includes: a base with a top cover; an insulating encapsulation layer encapsulating the outside of the base and the top cover; a temperature sensing chip disposed at the center of the insulating encapsulation layer; and an anti-interference component disposed between the top of the base and the inner top wall of the top cover, wrapping around the outside of the temperature sensing chip. This utility model forms a three-dimensional encapsulated shield for the temperature sensing chip, efficiently absorbing and reflecting external electromagnetic signals to prevent interference. It also forms a direct temperature sensing channel between the external environment, the groove, the temperature sensing hole, and the temperature sensing chip, reducing the obstruction of temperature conduction by excess material in traditional encapsulation structures, allowing ambient temperature to be quickly transferred to the chip, and improving the sensor's response speed.

Description

Technical Field

[0001] This utility model relates to the field of temperature sensor technology, and in particular to an ultra-thin semiconductor temperature sensor probe structure. Background Technology

[0002] Semiconductor temperature sensors are electronic components that measure temperature by utilizing the physical laws governing the changes in the electrical properties (such as resistance and voltage) of semiconductor materials with temperature. They are characterized by small size, fast response speed, low cost, and moderate accuracy, and are widely used in consumer electronics, industrial control, medical equipment, automotive electronics, and other fields.

[0003] Currently, with the continuous development of technology, ultra-thin semiconductor temperature sensors have been widely used in many fields, such as electronic equipment, medical instruments, and industrial monitoring. However, existing ultra-thin semiconductor temperature sensor probe structures suffer from poor internal anti-interference shielding performance. In actual working environments, the sensors are easily affected by external electromagnetic interference, which can seriously affect the accuracy and stability of sensor measurements, leading to increased measurement errors or even causing the sensor to malfunction. For example, in electronic equipment, the complex surrounding electromagnetic environment can interfere with the sensor's signal transmission, causing deviations in temperature measurement results. Therefore, it is urgent to design an ultra-thin semiconductor temperature sensor probe structure to solve the above problems. Utility Model Content

[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing an ultra-thin semiconductor temperature sensor probe structure. Its advantage lies in forming a three-dimensional, enveloping shield around the temperature sensing chip, which efficiently absorbs and reflects external electromagnetic signals, preventing interference.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] An ultra-thin semiconductor temperature sensor probe structure includes:

[0007] A base, the base being covered by a top cover;

[0008] An insulating encapsulation layer is encapsulated on the outside of the base and the top cover;

[0009] A temperature sensing chip, wherein the temperature sensing chip is disposed at the center of the insulating encapsulation layer;

[0010] An anti-interference component is disposed at the top of the base and the middle of the top inner wall of the top cover, and the anti-interference component is wrapped around the outside of the temperature sensing chip.

[0011] The above technical solutions can efficiently absorb and reflect external electromagnetic signals, preventing interference.

[0012] The present invention is further configured such that the anti-interference component includes an outer ring shielding layer, multiple shielding tubes, a lower shielding cover and an upper shielding cover, and the outer ring shielding layer is attached to the top of the base and the inner wall of the top of the top cover, and the outer ring shielding layer is fixed to the top of the base. The lower shielding cover and the upper shielding cover are attached to the inner wall of the outer ring shielding layer, and the lower shielding cover and the upper shielding cover cover the outside of the temperature sensing chip.

[0013] The above technical solutions achieve a three-dimensional, enveloping shielding effect on the temperature sensing chip.

[0014] The present invention is further configured such that the top of the base is provided with a lower mounting groove for the lower shielding cover to be fitted and installed, and the inner wall of the top of the top cover is provided with an upper mounting groove for the upper shielding cover to be fitted and installed.

[0015] The above technical solutions facilitate the installation of the lower and upper shielding covers, ensuring their stability.

[0016] The present invention is further configured such that the temperature sensing chip is a miniature NTC thermistor, and each of the four corners of the temperature sensing chip is fixed with a mounting base. Each mounting base is provided with a reinforcement hole, and silver paste is placed in the reinforcement hole for reinforcement of the mounting base and the lower shielding cover.

[0017] The above technical solutions ensure that the temperature sensing chip is securely installed, preventing chip displacement from affecting signal conversion.

[0018] The present invention is further configured such that a plurality of pins extending out of an insulating encapsulation layer are provided on one side of the temperature sensing chip, and a plurality of shielding tubes are fixed to one side of the outer ring shielding layer. A plurality of outlets are provided on one side of the outer ring shielding layer and one side of the insulating encapsulation layer. A plurality of lead-out grooves are provided on one side of the bottom of the upper shielding cover and one side of the top of the lower shielding cover, and the pins pass through the lead-out grooves, shielding tubes and outlets to the outside.

[0019] The above technical solutions facilitate pin lead-out.

[0020] The present invention is further configured such that the outer ring shielding layer, the shielding tube, the lower shielding cover and the upper shielding cover are all made of oxygen-free copper, and their outer surfaces are all plated with a nickel-phosphorus alloy layer.

[0021] Through the above technical solutions, the nickel-phosphorus alloy coating can enhance the corrosion resistance and structural stability of the material, ensuring that the shielding performance does not degrade during long-term use.

[0022] The present invention is further configured such that a temperature sensing hole is provided in the middle of both the upper shielding cover and the top cover, and a groove is provided in the middle of the insulating encapsulation layer, the groove covering the temperature sensing hole.

[0023] The above technical solutions enable the ambient temperature to be quickly transferred to the chip, thereby improving the sensor's response speed.

[0024] The present invention is further provided that the outer circumferential wall of the base and the inner circumferential wall of the top cover are provided with annular sealing grooves, and the overall cross-section of the annular sealing grooves is elliptical. A sealing ring is provided in the annular sealing grooves, and the sealing rings are foamed by foaming agent.

[0025] The above technical solutions can ensure the stability of the base and top cover, and effectively isolate external dust and moisture to prevent damage to internal components.

[0026] The beneficial effects of this utility model are as follows:

[0027] 1. This utility model forms a three-dimensional enveloping shield for the temperature sensing chip by setting an anti-interference component consisting of an outer ring shielding layer, a shielding tube, a lower shielding cover, and an upper shielding cover. The outer ring shielding layer is attached to the inner wall of the base and the top cover to block the intrusion of external electromagnetic signals from the outside. The lower shielding cover and the upper shielding cover are directly covered to the outside of the temperature sensing chip, achieving close-range shielding of the core area of ​​the chip. The shielding tube provides individual shielding for the extended pins to prevent the pins from being interfered with during signal transmission. Thus, it can efficiently absorb and reflect external electromagnetic signals and prevent interference.

[0028] 2. In this utility model, a temperature sensing hole is opened in the middle of the upper shielding cover and the top cover, and a groove is set at the corresponding position of the insulating encapsulation layer to cover the temperature sensing hole, forming a direct temperature sensing channel between the external environment, the groove, the temperature sensing hole and the temperature sensing chip. This reduces the obstruction of temperature conduction by the excess material in the traditional encapsulation structure, allowing the ambient temperature to be quickly transferred to the chip and improving the response speed of the sensor.

[0029] 3. This utility model adopts a compact structure of base, top cover and external insulating encapsulation layer, all of which adopt an ultra-thin design. While ensuring performance, it achieves an ultra-thin shape of probe, which can be adapted to electronic equipment, medical instruments and other scenarios with strict requirements for installation space. Attached Figure Description

[0030] Figure 1 This is a perspective view of the structure of an ultra-thin semiconductor temperature sensor probe proposed in this utility model;

[0031] Figure 2 This is a front cross-sectional view of an ultra-thin semiconductor temperature sensor probe structure proposed in this utility model.

[0032] Figure 3 This is a schematic diagram of the outer ring shielding layer and shielding tube structure of an ultra-thin semiconductor temperature sensor probe structure proposed in this utility model;

[0033] Figure 4This is a schematic diagram of the lower mounting groove and annular sealing groove structure of an ultra-thin semiconductor temperature sensor probe structure proposed in this utility model;

[0034] Figure 5 This is a schematic diagram of the upper mounting groove and outlet structure of an ultra-thin semiconductor temperature sensor probe structure proposed in this utility model;

[0035] Figure 6 This is a schematic diagram of the upper shielding cover and lead-out groove structure of an ultra-thin semiconductor temperature sensor probe structure proposed in this utility model.

[0036] In the diagram: 1. Insulating encapsulation layer; 2. Groove; 3. Pin; 4. Top cover; 5. Temperature sensing chip; 6. Anti-interference component; 61. Outer ring shielding layer; 62. Shielding tube; 63. Lower shielding cover; 64. Lower mounting groove; 65. Upper mounting groove; 66. Upper shielding cover; 67. Lead-out groove; 7. Base; 8. Mounting seat; 9. Sealing ring; 10. Annular sealing groove; 11. Reinforcing hole; 12. Silver paste; 13. Lead-out port; 14. Temperature sensing hole. Detailed Implementation

[0037] The technical solution of this utility model will be further described in detail below with reference to specific embodiments.

[0038] Reference Figures 1-6 This utility model provides an ultra-thin semiconductor temperature sensor probe structure, which adopts an ultra-thin design and includes:

[0039] Base 7, with top cover 4 on top of base 7;

[0040] Insulating encapsulation layer 1 is encapsulated on the outside of base 7 and top cover 4. Insulating encapsulation layer 1 is made of aluminum nitride ceramic material.

[0041] Temperature sensing chip 5 is disposed at the center of insulating encapsulation layer 1.

[0042] An anti-interference component 6 is disposed between the top of the base 7 and the top inner wall of the top cover 4, and wraps around the outside of the temperature sensing chip 5. The anti-interference component 6 includes an outer ring shielding layer 61, multiple shielding tubes 62, a lower shielding cover 63, and an upper shielding cover 66. The outer ring shielding layer 61 is attached to the top of the base 7 and the top inner wall of the top cover 4, and is fixed to the top of the base 7. The lower shielding cover 63 and the upper shielding cover 66 are attached to the inner wall of the outer ring shielding layer 61, and cover the outside of the temperature sensing chip 5. The top of the base 7 has a lower mounting groove 64 for the lower shielding cover 63 to be fitted and installed, and the top inner wall of the top cover 4 has an upper mounting groove 65 for the upper shielding cover 66 to be fitted and installed. Multiple pins 3 extending from the insulating encapsulation layer 1 are provided on one side of the temperature sensing chip 5, and multiple shielding tubes 62 are fixed to one side of the outer ring shielding layer 61. Multiple outlets 13 are provided on one side of the 61 and on one side of the insulating encapsulation layer 1. Multiple lead-out slots 67 are provided on the bottom side of the upper shielding cover 66 and the top side of the lower shielding cover 63. The pins 3 pass through the lead-out slots 67, the shielding tube 62 and the outlets 13 to the outside. The outer ring shielding layer 61, the shielding tube 62, the lower shielding cover 63 and the upper shielding cover 66 are all made of oxygen-free copper and their outer surfaces are plated with a nickel-phosphorus alloy layer. The anti-interference component 6, composed of the outer ring shielding layer 61, the shielding tube 62, the lower shielding cover 63 and the upper shielding cover 66, forms a three-dimensional enveloping shield for the temperature sensing chip 5. The outer ring shielding layer 61 blocks external electromagnetic signals from entering from the outside. The lower shielding cover 63 and the upper shielding cover 66 directly cover the outside of the temperature sensing chip 5 to achieve close-range shielding of the core area of ​​the chip. The shielding tube 62 provides individual shielding for the extended pins 3, thereby efficiently absorbing and reflecting external electromagnetic signals and preventing interference.

[0043] To ensure the stable performance of temperature sensing chip 5, refer to Figure 2 and Figure 3 The temperature sensing chip 5 is a miniature NTC thermistor, and each of the four corners of the temperature sensing chip 5 is fixed with a mounting base 8. Each mounting base 8 has a reinforcement hole 11, and silver paste 12 is placed in the reinforcement hole 11 for reinforcement of the mounting base 8 and the lower shielding cover 63, so that the temperature sensing chip 5 is installed stably and the chip displacement is avoided from affecting the signal conversion.

[0044] To achieve rapid temperature measurement, refer to Figure 1 , Figure 2 , Figure 5 and Figure 6Temperature sensing holes 14 are provided in the middle of the upper shielding cover 66 and the top cover 4, and a groove 2 is provided in the middle of the insulating encapsulation layer 1. The groove 2 covers the temperature sensing hole 14, forming a direct temperature sensing channel between the external environment, the groove 2, the temperature sensing hole 14, and the temperature sensing chip 5. This reduces the obstruction of temperature conduction by the excess material in the traditional encapsulation structure, allowing the ambient temperature to be quickly transferred to the chip and improving the response speed of the sensor.

[0045] To ensure a tight seal, refer to Figure 2 , Figure 3 and Figure 5 The outer circumferential wall of the base 7 and the inner circumferential wall of the top cover 4 are both provided with annular sealing grooves 10, and the overall cross-section of the annular sealing groove 10 is elliptical. A sealing ring 9 is provided in the annular sealing groove 10. The sealing ring 9 is made of foaming agent. The sealing ring 9, which is made of foaming agent, can not only ensure the stability of the composition of the base 7 and the top cover 4, but also effectively isolate external dust and moisture to prevent damage to internal components.

[0046] Working principle: During operation, the ambient temperature first enters the temperature sensing hole 14 between the upper shielding cover 66 and the top cover 4 through the groove 2 in the middle of the insulating encapsulation layer 1, and then is directly transmitted to the temperature sensing chip 5 set in the center of the insulating encapsulation layer 1. The temperature sensing chip 5 converts the temperature signal into a corresponding electrical signal, which is transmitted through multiple pins 3.

[0047] In this process, the anti-interference component 6, consisting of an outer ring shielding layer 61, a shielding tube 62, a lower shielding cover 63, and an upper shielding cover 66, plays a key role. The outer ring shielding layer 61, the shielding tube 62, the lower shielding cover 63, and the upper shielding cover 66 are all made of oxygen-free copper and have a nickel-phosphorus alloy layer plated on their outer surface. They can block external electromagnetic interference in all directions, ensuring the stability of the electrical characteristics of the temperature sensing chip 5 and the accuracy of the signal transmitted by the pin 3.

[0048] In addition, the mounting bases 8 at the four corners of the temperature sensing chip 5 are reinforced and connected to the lower shielding cover 63 through the silver paste 12 in the reinforcement holes 11, which prevents the chip from shifting and affecting signal conversion. At the same time, the sealing rings 9 made of foaming agent in the annular sealing grooves 10 opened on the outer circumference of the base 7 and the inner circumference of the top cover 4 not only ensure the stability of the composition of the base 7 and the top cover 4, but also effectively isolate external dust and moisture, prevent damage to internal components, and ensure that the entire probe can continuously achieve accurate temperature measurement and signal transmission in a stable environment.

[0049] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A structure for an ultra-thin semiconductor temperature sensor probe, characterized in that, include: A base (7), on which a top cover (4) is fitted; An insulating encapsulation layer (1) is encapsulated on the outside of the base (7) and the top cover (4); Temperature sensing chip (5), the temperature sensing chip (5) is disposed at the center of insulating encapsulation layer (1); An anti-interference component (6) is disposed at the top of the base (7) and the middle of the top inner wall of the top cover (4), and the anti-interference component (6) is wrapped around the outside of the temperature sensing chip (5).

2. The ultra-thin semiconductor temperature sensor probe structure according to claim 1, characterized in that, The anti-interference component (6) includes an outer ring shielding layer (61), multiple shielding tubes (62), a lower shielding cover (63), and an upper shielding cover (66). The outer ring shielding layer (61) is attached to the top of the base (7) and the inner wall of the top of the top cover (4). The outer ring shielding layer (61) is fixed to the top of the base (7). The lower shielding cover (63) and the upper shielding cover (66) are attached to the inner wall of the outer ring shielding layer (61). The lower shielding cover (63) and the upper shielding cover (66) cover the outside of the temperature sensing chip (5).

3. The ultra-thin semiconductor temperature sensor probe structure according to claim 2, characterized in that, The base (7) has a lower mounting groove (64) on its top for the lower shielding cover (63) to be fitted and installed, and the top inner wall of the top cover (4) has an upper mounting groove (65) for the upper shielding cover (66) to be fitted and installed.

4. The ultra-thin semiconductor temperature sensor probe structure according to claim 3, characterized in that, The temperature sensing chip (5) is a miniature NTC thermistor, and each of the four corners of the temperature sensing chip (5) is fixed with a mounting base (8). Each mounting base (8) has a reinforcement hole (11), and silver paste (12) is placed in the reinforcement hole (11) for reinforcement of the mounting base (8) and the lower shielding cover (63).

5. The ultra-thin semiconductor temperature sensor probe structure according to claim 4, characterized in that, The temperature sensing chip (5) has multiple pins (3) extending out of the insulating encapsulation layer (1) on one side, and multiple shielding tubes (62) are fixed to one side of the outer ring shielding layer (61). Multiple outlets (13) are opened on one side of the outer ring shielding layer (61) and one side of the insulating encapsulation layer (1). Multiple lead-out slots (67) are opened on the bottom side of the upper shielding cover (66) and the top side of the lower shielding cover (63). The pins (3) pass through the lead-out slots (67), shielding tubes (62) and outlets (13) to the outside.

6. The ultra-thin semiconductor temperature sensor probe structure according to claim 5, characterized in that, The outer ring shielding layer (61), shielding tube (62), lower shielding cover (63) and upper shielding cover (66) are all made of oxygen-free copper, and their outer surfaces are all plated with a nickel-phosphorus alloy layer.

7. The ultra-thin semiconductor temperature sensor probe structure according to claim 6, characterized in that, Temperature sensing holes (14) are provided in the middle of the upper shielding cover (66) and the top cover (4), and a groove (2) is provided in the middle of the insulating encapsulation layer (1), which covers the temperature sensing holes (14).

8. The ultra-thin semiconductor temperature sensor probe structure according to claim 1, characterized in that, The outer circumferential wall of the base (7) and the inner circumferential wall of the top cover (4) are provided with annular sealing grooves (10), and the overall cross-section of the annular sealing groove (10) is elliptical. A sealing ring (9) is provided in the annular sealing groove (10), and the sealing ring (9) is foamed by foaming agent.

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