半导体样品退火装置

Abstract

本实用新型提供一种半导体样品退火装置，涉及半导体技术领域。该半导体样品退火装置包括：腔室，用于放置半导体样品，半导体样品包括掺杂有掺杂剂的受热敏感样品；加热装置，设置于腔室内，用于对腔室进行加热，以使腔室升温至第一预设温度；换热管道，与腔室相连通，用于向腔室通入第一惰性气体，第一惰性气体用于对半导体样品进行降温，以减少半导体样品的退火时间。本实用新型通过采用惰性气体对半导体样品进行降温，可以显著减少样品在退火工艺中的受热时长，实现了半导体样品的快速退火。

Claims

1. A semiconductor sample annealing apparatus, characterized by comprising: include: A chamber (6) is used to place a semiconductor sample (61), the semiconductor sample (61) including a heat-sensitive sample doped with a dopant; A heating device (62) is disposed in the chamber (6) for heating the chamber (6) to raise the temperature of the chamber to a first preset temperature; A heat exchange pipe (43) is connected to the chamber (6) and is used to introduce a first inert gas into the chamber. The first inert gas is used to cool the semiconductor sample (61) in order to reduce the annealing time of the semiconductor sample (61). The heat exchanger (4) is installed on the outside of the heat exchange pipe (43) to cool the first inert gas so that the temperature of the first inert gas is lower than the second preset temperature.

2. The semiconductor sample annealing apparatus of claim 1, wherein The heat exchanger (4) is filled with liquid nitrogen, which is used to cool the first inert gas. The heat exchange pipe (43) is immersed in the liquid nitrogen.

3. The semiconductor sample annealing apparatus of claim 2, wherein The heat exchanger (4) is provided with a filling port (41) and an evaporation port (42). The filling port (41) is used to fill the heat exchanger with liquid nitrogen, and the evaporation port (42) is used to connect the liquid nitrogen with the air.

4. The semiconductor sample annealing apparatus of claim 1, wherein Also includes: An inert gas source (1) is connected to the heat exchange pipe (43) and the chamber (6) for introducing the first inert gas into the heat exchange pipe (43) and the second inert gas into the chamber (6); A vacuum pumping device (8) is connected to the chamber (6) along the inflow direction of the second inert gas and is used to discharge the second inert gas in the chamber (6). The flow rate of the discharged second inert gas is the same as the flow rate of the introduced second inert gas.

5. The semiconductor sample annealing apparatus of claim 4, wherein Also includes: A first control valve (2) is disposed between the chamber (6) and the inert gas source (1) for controlling the communication between the chamber (6) and the inert gas source (1); The second control valve (3) is disposed between the heat exchange pipe (43) and the inert gas source (1) for controlling the connection between the heat exchange pipe (43) and the inert gas source (1); A third control valve (7) is disposed between the chamber (6) and the vacuum pumping device (8) for controlling the communication between the vacuum pumping device (8) and the chamber (6).

6. The semiconductor sample annealing apparatus of claim 1, wherein The heat exchange pipe (43) is a coil or plate heat exchange pipe.

7. The semiconductor sample annealing apparatus of claim 1, wherein The heating device (62) includes: Multiple heating lamps are disposed on at least two opposite sides of the semiconductor sample (61) along the epitaxial direction.

8. The semiconductor sample annealing apparatus of claim 1, wherein Also includes: A pressure and temperature detection device (5) is installed between the chamber (6) and the heat exchange pipe (43) to detect the pressure and temperature of the first inert gas.

9. The semiconductor sample annealing apparatus of claim 1, wherein Also includes: A foam layer is wrapped around the heat exchange pipe (43) and the heat exchanger (4) to isolate the heat exchange pipe (43) and the heat exchanger (4) from the air.

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