一种高耐压薄膜电容器
By introducing a high-voltage-resistant layer, a shock-resistant shell, a buffer filler area, and a bracket structure into the film capacitor, the voltage resistance and shock resistance problems of traditional film capacitors under high-impact conditions are solved, achieving higher voltage resistance and structural stability, and improving reliability and service life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- DONGGUAN DONGCHENGXIN ELECTRONICS CO LTD
- Filing Date
- 2025-04-03
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional film capacitors have poor resistance to pressure and impact under high-impact and complex operating conditions, which leads to a decline in electrical performance or failure, affecting reliability and service life.
A high-voltage film capacitor was designed, which adopts a high-voltage layer, an impact-resistant shell, a buffer filling area and a bracket structure, combined with a voltage-resistant support column and locking bolts to enhance the capacitor's voltage resistance and impact resistance.
It significantly improves the voltage withstand capability and impact resistance of film capacitors, enhances structural stability and reliability, and extends service life.
Smart Images
Figure CN224519702U_ABST
Abstract
Claims
1. A high-voltage-resistant film capacitor, comprising a film capacitor body (10) and two sets of terminals (30) disposed at one end of the film capacitor body (10), characterized in that: The top and bottom surfaces of the thin film capacitor body (10) are provided with high voltage-resistant layers (20). The thin-film capacitor body (10) includes a capacitor core (11), and an anti-collision shell (12) is provided around the perimeter of the capacitor core (11). A buffer filling area (13) is provided between the inner wall of the anti-collision shell (12) and the capacitor core (11). The buffer filling area (13) is equipped with several sets of uniformly spaced and vertically placed pressure-resistant support columns (40). A cross-shaped bracket (41) is provided between the high-pressure-resistant layer (20) and the capacitor core (11). The buffer filling area (13) is made of polyacrylamide gel particles or rubber particles, and the width of the buffer filling area (13) is 3-5 mm. The pressure-resistant support column (40) is one-half to two-thirds the width of the buffer filling area (13). The four brackets (41) The top corners are all connected to the ends of the pressure-resistant support column (40) by locking bolts (42); the outer wall of the high-pressure-resistant layer (20) is provided with a data label (21) for identifying the maximum capacitance and rated voltage data of the capacitor core (11); the high-pressure-resistant layer (20) includes a pressure-resistant shell (22), and the pressure-resistant shell (22) and the bracket (41) are integrally formed; the surface of the pressure-resistant shell (22) is coated with a wear-resistant and anti-corrosion layer (23) with a thickness of 0.25-0.5mm.