An ion implanter

Abstract

This application relates to the field of semiconductor manufacturing technology, specifically to an ion implanter, including a detection module, a driving device, and a wafer stage for carrying a wafer. The wafer stage is mounted on the driving device, which drives the wafer stage to move along a first direction. The detection module includes a measuring cup and a first Faraday cup, with the measuring cup and the ion beam emission head at the same horizontal plane in the first direction. When the driving device drives the wafer stage to move along the first direction below a first limit, the ion beam emitted by the ion beam emission head is received and detected by the measuring cup. When the driving device drives the wafer stage to move along the first direction to a second limit, the ion beam emitted by the ion beam emission head is received and detected by the first Faraday cup. This application can detect ion beam parameters simultaneously during wafer ion implantation, achieving real-time detection of the implantation process, which is beneficial for improving product yield.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and more specifically, to an ion implanter. Background Technology

[0002] In semiconductor manufacturing processes, ion implantation is a key doping technology. An ion implanter is a specialized piece of equipment for ion implantation. This type of equipment generates an ion beam through an ion source, and after multiple stages such as quality analysis, acceleration / deceleration, scanning, and focusing, the ion beam is finally uniformly implanted onto the wafer surface.

[0003] In existing technologies, the current magnitude, energy, and incident angle of the ion beam are monitored using a metrology cup before and after ion implantation of a wafer. However, during ion implantation, the wafer stage blocks the ion beam, preventing it from entering the metrology cup. Consequently, the ion beam status cannot be monitored until the ion implantation process is complete. Furthermore, transient anomalies in the ion beam during implantation, such as angle shifts, energy drifts, or current fluctuations caused by power supply fluctuations or vacuum changes, can lead to localized dose shifts, thereby affecting device performance and product yield.

[0004] The aforementioned problems expose the shortcomings of traditional ion implantation equipment in terms of monitoring, and there is an urgent need for a new method or structure that can monitor ion beam parameters without interrupting the process flow, so as to improve the consistency, stability and production reliability of the implantation process. Utility Model Content

[0005] The purpose of this application is to provide an ion implanter that can detect ion beam parameters while performing ion implantation on a wafer, thereby achieving real-time detection of the implantation process and improving product yield.

[0006] This application is implemented as follows:

[0007] This application provides an ion implanter, including: a detection module, a driving device, and a wafer stage for carrying wafers;

[0008] The wafer stage is mounted on the driving device, and the driving device drives the wafer stage to move along the first direction;

[0009] The detection module includes a measuring cup and a first Faraday cup. The measuring cup is mounted on the backplate of the ion implanter, and the first Faraday cup is mounted below the wafer stage. The measuring cup and the ion beam emitter are on the same horizontal plane in a first direction.

[0010] When the driving device drives the wafer stage to move along the first direction to below the first limit, the ion beam emitted by the ion beam emitter is received and detected by the metering cup. When the driving device drives the wafer stage to move along the first direction to the second limit, the ion beam emitted by the ion beam emitter is received and detected by the first Faraday cup.

[0011] As an optional implementation, it further includes: a receiving base connected to the driving device; the first Faraday cup and the wafer stage are both mounted on the receiving base and arranged along a first direction, and the driving device drives the first Faraday cup and the wafer stage to move synchronously through the receiving base.

[0012] As an optional implementation, there are multiple first Faraday cups, which are arranged sequentially along a first direction.

[0013] As an optional implementation, the centerline of the first Faraday cup along the first direction overlaps with the projection of the centerline of the wafer stage along the first direction toward the backplane.

[0014] As an optional implementation, the first Faraday cup is also mounted above the wafer stage.

[0015] As an optional implementation, when the driving device drives the wafer stage to move along the first direction to between the first limit and the second limit, the ion beam emitted by the ion beam emitter vertically irradiates the wafer on the surface of the wafer stage and performs scanning implantation on the wafer on the surface of the wafer stage.

[0016] As an optional implementation, the ion beam irradiates the wafer on the surface of the wafer stage perpendicularly and forms an elongated irradiation area on the surface of the wafer. The elongated irradiation area extends along a second direction perpendicular to the first direction, and the length of the elongated irradiation area is greater than the diameter of the wafer stage.

[0017] The detection module also includes a second Faraday cup, which is fixedly disposed at at least one end of the elongated irradiation area.

[0018] As an optional implementation, there are multiple second Faraday cups, which are arranged sequentially along a first direction; the two ends of the arrangement path of the multiple second Faraday cups are respectively aligned with the two ends of the wafer in the first direction.

[0019] As an optional implementation, it further includes: a rotation module connected to the wafer stage, the rotation module being used to drive the wafer stage to rotate about a central axis.

[0020] As an optional implementation, the first direction is the height direction of the ion implanter, the first limit is the initial implantation limit of the ion implanter for ion implantation of the wafer, and the second limit is the top limit of the wafer stage moving along the first direction.

[0021] The beneficial effects of this application include:

[0022] The ion implanter provided in this application embodiment has a first Faraday cup installed below the wafer stage. As the wafer stage is moved by the driving device, the first Faraday cup also moves. When the driving device drives the wafer stage to move along the first direction to the second limit position, the ion beam emitted by the ion beam emitter can be received and detected by the first Faraday cup. This allows for the detection of relevant parameters of the ion beam during the ion implantation process, overcoming the problem that traditional ion implantation equipment cannot monitor the ion beam status during implantation. This improves the stability of the ion implantation process, further enhances the consistency of the implantation process and increases product yield, thereby enhancing the production reliability and process controllability of the equipment. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is one of the schematic diagrams of the ion implanter according to an embodiment of this application;

[0025] Figure 2 This is a second schematic diagram of the ion implanter according to an embodiment of this application;

[0026] Figure 3 This is the third schematic diagram of the ion implanter according to an embodiment of this application;

[0027] Figure 4 This is the fourth schematic diagram of the ion implanter according to an embodiment of this application.

[0028] Icons: 100-Metrifying cup; 101-Driving device; 102-Wafer stage; 103-Ion beam emitter; 104-Elongated irradiation area; 105-Receiving base; 106-First Faraday cup; 107-Second Faraday cup; A-First direction; B-Second direction. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0030] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0031] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0032] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0033] As described in the background section, traditional ion implantation equipment suffers from insufficient monitoring during the ion implantation process.

[0034] To address the aforementioned technical problems, embodiments of this application provide an ion implanter.

[0035] Reference Figure 1 As shown in the embodiment of this application, an ion implanter may include: a detection module, a driving device 101, and a wafer stage 102 for carrying wafers.

[0036] The wafer stage 102 is mounted on the drive device 101, which can drive the wafer stage 102 to move along the first direction A.

[0037] In this embodiment, the drive device 101 may be a vertical bearing.

[0038] In this embodiment, the detection module may include a measuring cup 100 and a first Faraday cup 106. The measuring cup 100 is mounted on the back plate of the ion implanter, and the first Faraday cup 106 is mounted below the wafer stage 102. The measuring cup 100 and the ion beam emitter 103 are on the same horizontal plane in the first direction A.

[0039] In this embodiment, when the driving device 101 drives the wafer stage 102 to move along the first direction A to below the first limit, the ion beam emitted by the ion beam emitter 103 is received and detected by the metering cup 100. When the driving device 101 drives the wafer stage 102 to move along the first direction A to the second limit, the ion beam emitted by the ion beam emitter 103 is received and detected by the first Faraday cup 106.

[0040] In the above embodiments, by setting two detection components at different positions in the ion implanter, namely the metering cup 100 and the first Faraday cup 106, and coordinating them with the movement state of the wafer stage 102, continuous monitoring of the ion beam at different stages can be achieved. The metering cup 100 is fixed at the same horizontal plane as the ion beam emitter 103 and is used to receive the ion beam when the wafer stage 102 is below the first limit position for beam current detection before implantation. The first Faraday cup 106 is located below the wafer stage 102. When the wafer stage 102 moves the wafer it carries and performs ion implantation, the first Faraday cup 106 also moves with the wafer stage 102 as driven by the driving device 101. When the wafer stage 102 moves to the second limit position, the first Faraday cup 106 receives the ion beam for beam current measurement during the ion implantation process. Thus, without interrupting the process flow, ion beam injection and detection are carried out alternately by the metering cup 100 and the first Faraday cup 106, enabling real-time monitoring of ion beam parameters (such as current, energy, and angle).

[0041] The technical effects that the embodiments of this application can produce are:

[0042] The ion implanter provided in this application overcomes the problem of traditional ion implantation equipment being unable to monitor the ion beam status in real time during the implantation process. Especially when the ion beam is blocked by the wafer stage 102, continuous feedback can still be achieved by switching the detection path. This method improves the online monitoring capability of the ion implantation process, enabling timely detection and compensation for transient anomalies caused by power fluctuations, vacuum changes, etc., effectively preventing dose deviation, thereby improving the consistency, stability, and product yield of the implantation process, and enhancing the production reliability and process controllability of the equipment.

[0043] Reference Figure 1As shown, the ion implanter in this embodiment of the application may further include: a receiving base 105 connected to the driving device 101; the first Faraday cup 106 and the wafer stage 102 are both mounted on the receiving base 105 and arranged along the first direction A, and the driving device 101 drives the first Faraday cup 106 and the wafer stage 102 to move synchronously through the receiving base 105.

[0044] When the driving device 101 drives the wafer stage 102 to move along the first direction A to between the first limit and the second limit, the ion beam emitted by the ion beam emitter 103 vertically irradiates the wafer on the surface of the wafer stage 102 and performs scanning implantation on the wafer on the surface of the wafer stage 102.

[0045] It should be noted that the first direction A is the height direction of the ion implanter, the first limit is the initial implantation limit of the ion implanter when implanting ions into the wafer, and the second limit is the top limit of the wafer stage 102 moving along the first direction A.

[0046] As an optional implementation, there are multiple first Faraday cups 106, and the multiple first Faraday cups 106 are arranged sequentially along the first direction A.

[0047] In this embodiment, multiple first Faraday cups 106 are arranged sequentially along the first direction A, so that during the movement of the wafer stage 102, the first Faraday cups 106 at different positions can sequentially receive the ion beam, thereby enabling real-time monitoring of the ion beam distribution at multiple spatial locations. The arrangement of multiple first Faraday cups 106 can acquire current distribution information of the ion beam in the scanning direction, thus more comprehensively reflecting the uniformity and stability of the ion beam during the implantation process.

[0048] It should be noted that by detecting the distribution of multiple first Faraday cups 106 along the scanning direction, the resolution of the spatial distribution of the ion beam is improved, which helps to monitor the scanning uniformity of the ion beam in real time and enables rapid feedback adjustment when local anomalies occur (such as beam deviation or uneven distribution). This further improves the accuracy and consistency of the ion implantation process, and is especially suitable for advanced processes with extremely high requirements for doping uniformity and dose control, thereby improving device performance and product yield.

[0049] As an optional implementation, the center line of the first Faraday cup 106 along the first direction A overlaps with the projection of the wafer stage 102 along the center line of the first direction A toward the backplane direction.

[0050] In this embodiment, the centerline of the first Faraday cup 106 along the first direction A overlaps with the centerline of the wafer stage 102 along the same direction in its projection towards the backplane. This feature ensures that the first Faraday cup 106 can accurately receive the ion beam that was originally intended to irradiate the central region of the wafer when the wafer stage 102 moves to a specific position. This alignment design in this embodiment ensures that the detection position and the actual implantation area maintain spatial consistency and correspondence, thereby improving the representativeness and accuracy of the detection results.

[0051] Reference Figure 4 As shown, as an optional implementation, the first Faraday cup 106 is also mounted above the wafer stage 102.

[0052] In the above embodiments, by further mounting the first Faraday cup 106 above the wafer stage 102, the path and timing of ion beam detection are expanded. This allows the ion beam to be received between the upper and lower first Faraday cups 106 when the wafer stage 102 is in different positions along the first direction A, thereby achieving real-time detection of the ion beam at multiple height positions. The arrangement of this embodiment enhances the system's ability to monitor the vertical distribution of the ion beam, improving the overall flexibility and comprehensiveness of the detection.

[0053] Reference Figure 2 As shown, in one optional implementation, an ion beam is used to irradiate the wafer on the surface of the wafer stage 102 vertically, and an elongated irradiation region 104 is formed on the wafer surface. The elongated irradiation region 104 extends along a second direction B that is perpendicular to the first direction A, and the length of the elongated irradiation region 104 is greater than the diameter of the wafer stage 102.

[0054] It should be noted that the ion beam emitted by the ion beam emitter 103 forms a long strip pattern on the irradiation area of ​​the wafer stage 102. This long strip pattern extends along the second direction B, wherein the first direction A, the second direction B, and the movement path of the ion beam are mutually perpendicular to each other, forming a three-dimensional orthogonal coordinate system.

[0055] It should be noted that the first direction A can be set as the vertical direction, and the second direction B is the horizontal direction.

[0056] It should be noted that the ion implanter in this embodiment of the application can be a high-current ion implanter, which can generate an elongated irradiation region 104.

[0057] In the above embodiments, the ion beam emitted by the ion beam emitter 103 forms a long strip-shaped irradiation area 104 on the wafer surface, so that as the wafer stage 102 moves along the first direction A with the receiving base 105, the ion beam can gradually cover the entire wafer surface through a long strip-shaped scanning method, thereby improving the implantation efficiency and uniformity.

[0058] To fill the testing gap in the central region, referring to Figure 2 As shown, the detection module may further include a second Faraday cup 107, which is fixedly disposed at at least one end of the elongated irradiation area 104.

[0059] In one embodiment, the second Faraday cup 107 is fixedly disposed at both ends of the elongated irradiation area 104.

[0060] In this embodiment, the elongated irradiation area 104 formed by the ion beam on the plane of the wafer stage 102 not only covers a portion of the wafer stage 102 but also covers the second Faraday cup 107. Therefore, while the wafer is actually receiving the ion beam, the second Faraday cup 107 can also acquire the status information of the ion beam, ensuring real-time monitoring.

[0061] In the above embodiments, by ensuring that the second Faraday cup 107 and the wafer stage 102 coexist within the elongated irradiation area 104 of the ion beam, real-time monitoring of the ion beam's status is achieved without interrupting the process flow. This design overcomes the problem in traditional equipment where the wafer stage 102 obstructs the Faraday cup, preventing real-time monitoring. The ion implanter provided in this application improves the accuracy and reliability of process control during ion implantation, reduces the risk of dose deviation due to transient anomalies in the ion beam, and improves product yield.

[0062] In this embodiment, when the wafer stage 102 moves the wafer along the first direction A, it passes through the elongated irradiation area 104 where the second Faraday cup 107 is not provided.

[0063] In the above embodiment, the length of the elongated irradiation area 104 is greater than the diameter of the wafer stage 102, ensuring that while the ion beam covers the entire wafer surface, there is still sufficient space for setting up the detection module. The detection module is fixedly set at at least one end of the elongated irradiation area 104, so that it remains outside the movement path of the wafer stage 102 during the ion implantation process and does not need to move synchronously with the wafer stage 102. The wafer stage 102 drives the wafer to move along the first direction A, passing only through the elongated irradiation area 104 without the second Faraday cup 107, thereby ensuring the continuity and uniformity of the implantation process. This setup not only simplifies the mechanical structure of the equipment and reduces potential errors caused by module movement, but also enables real-time monitoring of ion beam parameters without affecting the normal implantation process.

[0064] The real-time data acquisition in this application helps to quickly locate and resolve potential technical problems, such as anomalies caused by power fluctuations or changes in vacuum. Therefore, this application improves the convenience of equipment maintenance, extends equipment uptime, and further ensures the continuity and stability of production.

[0065] It should be noted that, in this embodiment of the application, the second Faraday cup 107 is arranged alongside the wafer stage 102 in the width direction of the elongated detection area irradiation region. When the wafer stage 102 is driven to move upward along the vertical first direction A, a portion of the elongated irradiation area 104 in the width direction falls on the wafer for ion implantation, and a portion falls on the second Faraday cup 107 for detection.

[0066] Reference Figure 3 As shown, in one optional implementation, there are multiple second Faraday cups 107, which are arranged sequentially along the first direction A. The two ends of the arrangement path of the multiple second Faraday cups 107 are respectively aligned with the two ends of the wafer in the first direction A. The multiple second Faraday cups 107 move synchronously with the wafer stage 102.

[0067] Furthermore, there are two sets of second Faraday cups 107, located on opposite sides of the wafer stage 102. For example, one set of second Faraday cups 107 is located on the left side of the wafer, with the ends of its arrangement path aligned with both ends of the wafer; the other set is located on the right side of the wafer, with the ends of its arrangement path aligned with both ends of the wafer. For example, one set of second Faraday cups 107 is located on the left side of the wafer, with the ends of its arrangement path aligned with the wafer's geometric center and the top edge of the wafer; the other set of second Faraday cups 107 is located on the right side of the wafer, with the ends of its arrangement path aligned with the wafer's geometric center and the bottom edge of the wafer.

[0068] It should be noted that two sets of second Faraday cups 107 are respectively set on both sides of the wafer stage 102. Each set of Faraday cups is arranged along the first direction A and can be configured according to different alignment methods. This enables full coverage and multi-point real-time detection of the ion beam throughout the entire scanning range during the reciprocating motion of the wafer stage 102, significantly improving the comprehensiveness and spatial resolution of the detection.

[0069] This embodiment of the application enhances the monitoring capability of ion beam current distribution uniformity by setting up multi-point detection units on both sides, and also effectively improves the system's response speed and feedback accuracy to abnormal fluctuations. At the same time, since the second Faraday cup 107 moves synchronously with the wafer stage 102, the consistency and stability of the measurement are guaranteed. It is suitable for high-precision, large-size wafer implantation processes, which helps to improve implantation uniformity, process repeatability, and the electrical performance and product yield of the final device.

[0070] In one embodiment, the ion implanter may further include a receiving base 105 on which the wafer stage 102 is mounted, and a rotating module is provided. The rotating module is connected to the wafer stage 102 and is used to drive the wafer stage 102 to rotate around a central axis.

[0071] In this embodiment, the wafer stage 102 is used to support and precisely position the wafer so that it can be irradiated by the ion beam. The plane of the wafer stage 102 is perpendicular to the ion beam irradiation direction, ensuring that the wafer surface can uniformly receive the ion beam and supporting the rotation and translation of the wafer during the implantation process.

[0072] In this embodiment, when the wafer needs to be fully implanted, the wafer stage 102 can stop its linear motion and rotate the wafer stage 102 through the rotation module to achieve ion implantation on the entire wafer surface.

[0073] It should be noted that the ion implanter provided in this application embodiment is equipped with a feedback control system. Based on real-time monitored data, the ion implanter can quickly identify and respond to changes in ion beam parameters, such as ion beam angle shift, energy drift, or current fluctuations, and make immediate adjustments through the feedback control system. This setup helps enhance the consistency and stability of the ion implantation process, ensuring that each wafer achieves the expected doping effect and reducing the negative impact of process deviations.

[0074] Because the embodiments of this application can monitor and adjust ion beam parameters in real time, the need for reprocessing due to process deviations is reduced, thus improving the overall efficiency of the production line. Therefore, this not only improves product quality but also reduces manufacturing costs, bringing significant economic benefits to semiconductor manufacturers.

[0075] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An ion implanter, comprising: include: The detection module, the driving device, and the wafer stage for carrying the wafer; The wafer stage is mounted on the driving device, and the driving device drives the wafer stage to move along the first direction; The detection module includes a measuring cup and a first Faraday cup. The measuring cup is mounted on the backplate of the ion implanter, and the first Faraday cup is mounted below the wafer stage. The measuring cup and the ion beam emitter are on the same horizontal plane in a first direction. When the driving device drives the wafer stage to move along the first direction to below the first limit, the ion beam emitted by the ion beam emitter is received and detected by the metering cup. When the driving device drives the wafer stage to move along the first direction to the second limit, the ion beam emitted by the ion beam emitter is received and detected by the first Faraday cup.

2. The ion implanter of claim 1, wherein, Also includes: A receiving base connected to the driving device; the first Faraday cup and the wafer stage are both mounted on the receiving base and arranged along a first direction, and the driving device drives the first Faraday cup and the wafer stage to move synchronously through the receiving base.

3. The ion implanter of claim 2, wherein, There are multiple first Faraday cups, and the multiple first Faraday cups are arranged sequentially along the first direction.

4. The ion implanter of claim 1, wherein, The centerline of the first Faraday cup along the first direction overlaps with the projection of the centerline of the wafer stage along the first direction toward the backplate.

5. The ion implanter of claim 1, wherein, The first Faraday cup is also mounted above the wafer stage.

6. The ion implanter of claim 1, wherein, When the driving device drives the wafer stage to move along the first direction to between the first limit and the second limit, the ion beam emitted by the ion beam emitter vertically irradiates the wafer on the surface of the wafer stage and performs scanning implantation on the wafer on the surface of the wafer stage.

7. The ion implanter of claim 6, wherein, The ion beam irradiates the wafer on the surface of the wafer stage perpendicularly, forming an elongated irradiation area on the wafer surface. The elongated irradiation area extends along a second direction perpendicular to the first direction, and the length of the elongated irradiation area is greater than the diameter of the wafer stage. The detection module also includes a second Faraday cup, which is fixedly disposed at at least one end of the elongated irradiation area.

8. The ion implanter of claim 7, wherein, There are multiple second Faraday cups, which are arranged sequentially along the first direction; the two ends of the arrangement path of the multiple second Faraday cups are respectively aligned with the two ends of the wafer in the first direction.

9. The ion implanter according to any one of claims 1-8, characterized in that, It also includes a rotation module connected to the wafer stage, the rotation module being used to drive the wafer stage to rotate about a central axis.

10. The ion implanter of claim 1, wherein, The first direction is the height direction of the ion implanter, the first limit is the initial implantation limit of the ion implanter for ion implantation of the wafer, and the second limit is the top limit of the wafer stage moving along the first direction.

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