一种过压保护电路及音响

By designing an overvoltage protection circuit that includes a Zener diode and a transistor, the problem of permanent damage to the load caused by excessive voltage in the prior art is solved. The circuit achieves automatic re-conduction when the voltage returns to normal, thus reducing maintenance costs.

CN224520644UActive Publication Date: 2026-07-17DONGGUAN TRISTAR ELECTRNIC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
DONGGUAN TRISTAR ELECTRNIC
Filing Date
2025-06-06
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing overvoltage protection circuits cannot automatically recover when they detect excessively high voltage, leading to permanent damage to the load and increased maintenance costs.

Method used

Design an overvoltage protection circuit that uses a combination of a first Zener diode, a PNP transistor, a second Zener diode, and a P-channel MOSFET to protect the load terminal when the voltage is too high and to re-conduct when the voltage returns to normal.

Benefits of technology

It achieves protection of the load terminal when the voltage is too high and automatically reconnects when the voltage returns to normal, avoiding permanent damage to the load terminal and reducing maintenance costs.

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Abstract

一种过压保护电路及音响，其中过压保护电路包括电源端，与所述电源端连接的第一稳压二极管、pnp三极管、第二稳压二极管以及P沟道场效应管，与所述场效应管的漏极连接的输出端以及负载端，与所述负载端以及第一稳压二极管连接的接地端；其中，所述第一稳压二极管的负极端与电源端连接，正极端接地；所述pnp三极管的发射极与所述电源端连接，pnp三极管的基极与所述第一稳压二极管的负极端连接，pnp三极管的集电极与所述第二稳压二极管的正极端连接；所述第二稳压二极管的负极端与所述电源端以及所述场效应管的源级连接。本实用新型的有益效果在于：可检测到电压过高时进行保护，并可在电压恢复正常时重新导通，从而保护负载端。
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Claims

1. An overvoltage protection circuit, characterized in that, include: The power supply terminal includes a first Zener diode, a PNP transistor, a second Zener diode, and a P-channel MOSFET connected to the power supply terminal; an output terminal connected to the drain of the MOSFET and a load terminal; and a ground terminal connected to the load terminal and the first Zener diode. In this configuration, the negative terminal of the first Zener diode is connected to the power supply terminal, and the positive terminal is grounded. The emitter of the PNP transistor is connected to the power supply terminal, the base of the PNP transistor is connected to the negative terminal of the first Zener diode, and the collector of the PNP transistor is connected to the positive terminal of the second Zener diode. The negative terminal of the second Zener diode is connected to the power supply terminal and the source terminal of the field-effect transistor; The gate of the field-effect transistor is connected to the positive terminal of the second Zener diode and grounded.

2. The overvoltage protection circuit of claim 1, wherein: It also includes a first resistor connected between the power supply terminal and the first Zener diode.

3. The overvoltage protection circuit of claim 1, wherein: It also includes a second resistor connected between the base of the PNP transistor and the first Zener diode.

4. The overvoltage protection circuit of claim 1, wherein: It also includes a third resistor disposed between the gate of the field-effect transistor, the positive terminal of the second Zener diode, the collector of the PNP transistor, and the ground terminal.

5. An overvoltage protection circuit according to claim 1, characterized in that: The load terminal is a resistor or a control module.

6. A sound device, characterized by: Including an overvoltage protection circuit as described in any one of claims 1-5.