功率模块

Abstract

本申请公开一种功率模块，包括：绝缘基板；三个半桥功率单元，所述三个半桥功率单元分别为U相半桥功率单元、V相半桥功率单元和W相半桥功率单元，所述U相半桥功率单元、V相半桥功率单元和W相半桥功率单元构成全桥拓扑电路结构，所述三个半桥功率单元位于所述绝缘基板的第一面上；所述U相半桥功率单元、V相半桥功率单元和W相半桥功率单元共用直流正端子和直流负端子。本实用新型显著缩小了功率模块的体积，使其布局更加紧凑，降低了成本，减小了各种换流回路的杂散电感，提高功率模块中的电流均衡度，优化了电气性能。

Claims

1. A power module, characterized by include: Insulating substrate; Three half-bridge power units, namely U-phase half-bridge power unit, V-phase half-bridge power unit and W-phase half-bridge power unit, constitute a full-bridge topology circuit structure, and the three half-bridge power units are located on the first surface of the insulating substrate. The U-phase half-bridge power unit, V-phase half-bridge power unit, and W-phase half-bridge power unit share a common DC positive terminal and a DC negative terminal.

2. The power module of claim 1, wherein, The U-phase half-bridge power unit includes a U-phase AC terminal, the V-phase half-bridge power unit includes a V-phase AC terminal, and the W-phase half-bridge power unit includes a W-phase AC terminal.

3. The power module of claim 1, wherein, Each half-bridge power unit includes an upper bridge power unit and a lower bridge power unit. The first end of the upper bridge power unit is electrically connected to the DC positive terminal, the second end of the upper bridge power unit and the first end of the lower bridge power unit are electrically connected to the AC terminal, and the first end of the lower bridge power unit is electrically connected to the DC negative terminal.

4. The power module according to claim 3, characterized in that, The power module includes a first side and a second side, with U-phase AC terminals, V-phase AC terminals and W-phase AC terminals on the first side of the power module; and DC positive terminals and DC negative terminals on the second side of the power module.

5. The power module of claim 4, wherein, The power module includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island located on the insulating substrate. The first end of the upper bridge power unit of each half-bridge power unit is located on the first base island, the first end of the U-phase lower bridge power unit is located on the second base island, the first end of the V-phase lower bridge power unit is located on the third base island, and the first end of the W-phase lower bridge power unit is located on the fourth base island. The second ends of the U-phase lower bridge power unit, the V-phase lower bridge power unit, and the W-phase lower bridge power unit are electrically connected to the fifth base island. The first base island is electrically connected to the DC positive terminal, and the fifth base island is electrically connected to the DC negative terminal.

6. The power module of claim 5, wherein, The power module further includes a sixth base island, a seventh base island, and an eighth base island. The second end of the U-phase upper bridge power unit is electrically connected to the sixth base island via a copper clip, a copper strip, or a lead wire. The second end of the V-phase upper bridge power unit is electrically connected to the seventh base island via a copper clip, a copper strip, or a lead wire. The second end of the W-phase upper bridge power unit is electrically connected to the eighth base island via a copper clip, a copper strip, or a lead wire.

7. The power module of claim 6, wherein, The sixth, seventh, and eighth base islands are connected to the U-phase AC terminal, V-phase AC terminal, and W-phase AC terminal by welding. The first base island is connected to the DC positive terminal by welding, and the fifth base island is connected to the DC negative terminal by welding.

8. The power module of claim 4, wherein, Each half-bridge power unit further includes a signal terminal, which includes a control terminal of the upper bridge power unit, a control terminal of the lower bridge power unit, a second-end signal terminal of the upper bridge power unit, a second-end signal terminal of the lower bridge power unit, and a first-end signal terminal of the upper bridge power unit. The control terminal of the upper bridge power unit is electrically connected to a third-end terminal of the upper bridge power unit, and the control terminal of the lower bridge power unit is electrically connected to a third-end terminal of the lower bridge power unit. The second-end signal terminal of the upper bridge power unit is electrically connected to the second-end terminal of the upper bridge power unit and the first-end terminal of the lower bridge power unit. The first-end terminals of each upper bridge power unit share the first-end signal terminal of the upper bridge power unit.

9. The power module of claim 8, wherein, The signal terminals also include a first temperature-sensitive signal terminal and a second temperature-sensitive signal terminal.

10. The power module of claim 6, wherein, The DC positive terminal includes a first DC positive terminal and a second DC positive terminal, and the DC negative terminal is located between the first DC positive terminal and the second DC positive terminal.

11. The power module of claim 6, wherein, The DC negative terminal includes a first DC negative terminal and a second DC negative terminal, and the DC positive terminal is located between the first DC negative terminal and the second DC negative terminal.

12. The power module of claim 6, wherein, The current flow path during U-phase commutation of the power module is as follows: the DC positive terminal, the first base island, the first end of the U-phase upper bridge power unit, the second end of the U-phase upper bridge power unit, the second base island, the first end of the U-phase lower bridge power unit, the second end of the U-phase lower bridge power unit, the fifth base island, and the DC negative terminal. The current flow path during V-phase commutation of the power module is as follows: the DC positive terminal, the first base island, the first end of the V-phase upper bridge power unit, the second end of the V-phase upper bridge power unit, the third base island, the first end of the V-phase lower bridge power unit, the second end of the V-phase lower bridge power unit, the fifth base island, and the DC negative terminal. When the power module W phase is commutated, the current flow path is as follows: the DC positive terminal, the first base island, the first end of the W phase upper bridge power unit, the second end of the W phase upper bridge power unit, the fourth base island, the first end of the W phase lower bridge power unit, the second end of the W phase lower bridge power unit, the fifth base island, and the DC negative terminal.

13. The power module of claim 10, wherein, During the U-phase commutation of the power module, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the first DC positive terminal, the first base island, the first end of the U-phase upper bridge power unit, the second end of the U-phase upper bridge power unit, the second base island, the first end of the U-phase lower bridge power unit, the second end of the U-phase lower bridge power unit, the fifth base island, and the DC negative terminal; The second commutation path is as follows: the second DC positive terminal, the first base island, the first end of the U-phase upper bridge power unit, the second end of the U-phase upper bridge power unit, the second base island, the first end of the U-phase lower bridge power unit, the second end of the U-phase lower bridge power unit, the fifth base island, and the DC negative terminal; When the power module V-phase is commutated, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the first DC positive terminal, the first base island, the first end of the V-phase upper bridge power unit, the second end of the V-phase upper bridge power unit, the third base island, the first end of the V-phase lower bridge power unit, the second end of the V-phase lower bridge power unit, the fifth base island, and the DC negative terminal. The second commutation path is as follows: the second DC positive terminal, the first base island, the first end of the V-phase upper bridge power unit, the second end of the V-phase upper bridge power unit, the third base island, the first end of the V-phase lower bridge power unit, the second end of the V-phase lower bridge power unit, the fifth base island, and the DC negative terminal. When the power module W phase is commutated, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the first DC positive terminal, the first base island, the first end of the W-phase upper bridge power unit, the second end of the W-phase upper bridge power unit, the fourth base island, the first end of the W-phase lower bridge power unit, the second end of the W-phase lower bridge power unit, the fifth base island, and the DC negative terminal; The second commutation path is as follows: the second DC positive terminal, the first base island, the first end of the W-phase upper bridge power unit, the second end of the W-phase upper bridge power unit, the fourth base island, the first end of the W-phase lower bridge power unit, the second end of the W-phase lower bridge power unit, the fifth base island, and the DC negative terminal.

14. The power module of claim 11, wherein, During the U-phase commutation of the power module, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the DC positive terminal, the first base island, the first end of the U-phase upper bridge power unit, the second end of the U-phase upper bridge power unit, the second base island, the first end of the U-phase lower bridge power unit, the second end of the U-phase lower bridge power unit, the fifth base island, and the first DC negative terminal; The second commutation path is as follows: the DC positive terminal, the first base island, the first end of the U-phase upper bridge power unit, the second end of the U-phase upper bridge power unit, the second base island, the first end of the U-phase lower bridge power unit, the second end of the U-phase lower bridge power unit, the fifth base island, and the second DC negative terminal; When the power module V-phase is commutated, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the DC positive terminal, the first base island, the first end of the V-phase upper bridge power unit, the second end of the V-phase upper bridge power unit, the third base island, the first end of the V-phase lower bridge power unit, the second end of the V-phase lower bridge power unit, the fifth base island, and the first DC negative terminal; The second commutation path is as follows: the DC positive terminal, the first base island, the first end of the V-phase upper bridge power unit, the second end of the V-phase upper bridge power unit, the third base island, the first end of the V-phase lower bridge power unit, the second end of the V-phase lower bridge power unit, the fifth base island, and the second DC negative terminal; When the power module W phase is commutated, the current flows through two parallel commutation paths: a first parallel commutation path and a second parallel commutation path. The first commutation path is: the DC positive terminal, the first base island, the first end of the W-phase upper bridge power unit, the second end of the W-phase upper bridge power unit, the fourth base island, the first end of the W-phase lower bridge power unit, the second end of the W-phase lower bridge power unit, the fifth base island, and the first DC negative terminal; The second commutation path is as follows: the DC positive terminal, the first base island, the first end of the W-phase upper bridge power unit, the second end of the W-phase upper bridge power unit, the fourth base island, the first end of the W-phase lower bridge power unit, the second end of the W-phase lower bridge power unit, the fifth base island, and the second DC negative terminal.

15. The power module according to claim 1, characterized in that, Each half-bridge power unit includes at least one first metal-oxide-semiconductor field-effect transistor (MOSFET) in its upper-bridge power unit and at least one second MOSFET in its lower-bridge power unit. The drain of the first MOSFET is a first terminal of the upper-bridge power unit, the source of the first MOSFET is a second terminal of the upper-bridge power unit, and the gate of the first MOSFET is a third terminal of the upper-bridge power unit. The drain of the second MOSFET is a first terminal of the lower-bridge power unit, the source of the second MOSFET is a second terminal of the lower-bridge power unit, and the gate of the second MOSFET is a third terminal of the lower-bridge power unit.

16. The power module of claim 1, wherein, Each half-bridge power unit includes at least one first insulated-gate bipolar transistor (IGBT) and a first fast recovery diode in its upper-bridge power unit. Each half-bridge power unit also includes at least one second IGBT and a second fast recovery diode in its lower-bridge power unit. The collector of the first IGBT and the cathode of the first fast recovery diode form the first terminal of the upper-bridge power unit. The emitter of the first IGBT and the anode of the first fast recovery diode form the second terminal of the upper-bridge power unit. The gate of the first IGBT forms the third terminal of the upper-bridge power unit. The collector of the second IGBT and the cathode of the second fast recovery diode form the first terminal of the lower-bridge power unit. The emitter of the second IGBT and the anode of the second fast recovery diode form the second terminal of the lower-bridge power unit. The gate of the second IGBT forms the third terminal of the lower-bridge power unit.

17. The power module of claim 1, wherein, The power module also includes a heat dissipation base plate, which is located on the second side of the insulating substrate, and the second side of the insulating substrate is opposite to the first side of the insulating substrate.

18. The power module of claim 1, wherein, The half-bridge power unit is potted or plastic-encapsulated.

19. The power module of claim 1, wherein, The power module also includes a magnetic core for current detection. The plastic encapsulation simultaneously wraps the corresponding AC terminals and the corresponding magnetic cores. The magnetic cores are located around the U-phase AC terminals, the V-phase AC terminals, and the W-phase AC terminals, respectively.

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