半导体结构
By forming alternating trench capacitor structures in the interconnect layer of a semiconductor device, the problems of capacitance reduction and manufacturing difficulty when the size of the capacitor structure is reduced are solved, thereby achieving improved capacitance and manufacturing stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-07-09
- Publication Date
- 2026-07-17
Smart Images
Figure CN224521480U_ABST
Abstract
Claims
1. A semiconductor structure, characterized by, include: A bottom electrode structure comprising a series of rear-end conductive structures in an interconnect layer of a semiconductor device. The plurality of rear-end conductive structures are arranged in columns to define the plurality of trenches in the semiconductor structure; An insulating layer is located on the sidewalls and bottom surface of the plurality of trenches; and A top electrode structure is located on the insulating layer in the plurality of trenches.
2. The semiconductor structure of claim 1, wherein, The bottom electrode structure further includes: A horizontally extending conductive structure is located below the longitudinal rows of the plurality of rear conductive structures and below the plurality of trenches. The horizontally extending conductive structure extends laterally across the multiple rear-end conductive structure columns and the multiple trenches.
3. The semiconductor structure of claim 1, wherein, The insulating layer extends continuously between the plurality of trenches.
4. The semiconductor structure of claim 1, wherein, The insulating layer includes a plurality of discontinuous segments, and each of the plurality of discontinuous segments is included in a corresponding one of the plurality of trenches.
5. The semiconductor structure of claim 1, wherein, The top electrode structure includes a merged section located above the plurality of trenches, and the merged section is coupled to a top contact structure of the semiconductor structure.
6. The semiconductor structure of claim 1, wherein, The top electrode structure includes multiple discontinuous columns. Each of the plurality of discontinuous columns is included in a corresponding one of the plurality of trenches; and Each of the plurality of discontinuous columns is coupled to an individual top contact structure of the semiconductor structure.
7. A semiconductor structure, characterized by include: A bottom electrode structure comprising a series of rear-end conductive structures in an interconnect layer of a semiconductor device. The plurality of rear-end conductive structures are arranged in columns to define the plurality of trenches in the semiconductor structure, and Each of the multiple rear conductive structures in a row comprises an alternating arrangement of multiple through holes and multiple metallization structures; An insulating layer is located on the sidewalls and bottom surface of the plurality of trenches; and A top electrode structure is located on the insulating layer within the plurality of trenches. The top electrode structure includes multiple air gaps extending into the multiple trenches.
8. The semiconductor structure of claim 7, wherein, The insulating layer comprises a multilayer stack, and the multilayer stack includes: A first low dielectric constant dielectric layer; A high dielectric constant dielectric layer is located on the first low dielectric constant dielectric layer; and A second low dielectric constant dielectric layer is located on the high dielectric constant dielectric layer.
9. The semiconductor structure of claim 7, wherein, The bottom electrode structure further includes: A first horizontally extending conductive structure is located below the longitudinal rows of the plurality of rear conductive structures and below the plurality of trenches. The first horizontally extending conductive structure extends laterally across the multiple rear-end conductive structure columns and the multiple trenches; and The semiconductor structure further includes: A bottom contact structure is located below the first horizontally extending conductive structure, wherein the bottom contact structure is coupled to the first horizontally extending conductive structure; Multiple second contact structures are coupled to the top electrode structure in each of the multiple trenches; and A second horizontally extending conductive structure is located above and coupled to each of the plurality of second contact structures.
10. A semiconductor structure, characterized by include: An interconnect layer is located above a device layer, wherein the interconnect layer includes multiple dielectric layers; a plurality of back-end conductive structures in the plurality of dielectric layers, wherein the plurality of back-end conductive structures are arranged in a plurality of vertically-extending columns, and the plurality of vertically-extending columns correspond to a bottom electrode structure of a trench capacitor structure; a plurality of trenches through the plurality of dielectric layers between adjacent pairs of the plurality of vertically-extending columns of the trench capacitor structure, wherein the plurality of vertically-extending columns define sidewalls of the plurality of trenches; an insulator layer on the sidewalls of the plurality of trenches; and a top electrode structure on the insulator layer in the plurality of trenches.