一种改进型芯片封装体

Abstract

本实用新型公开了一种改进型芯片封装体，包括滤光元件、图像传感芯片、包覆式塑胶支撑框架及基板电路组件。图像传感芯片的非感光区域周向设置多个垂直贯通孔，每个垂直贯通孔内填充有银浆固化形成导电金属柱体，导电金属柱体顶部键合有金属焊盘，并通过热压焊接形成球形金属凸块。基板电路组件由绝缘基材层和网状铜质导电层组成，导电金属柱体底端与基板电路组件上的连接片电性连接。该设计消除了传统封装结构中外部飞线的需求，显著提高了封装体的集成度，且具有更紧凑的体积，适用于高性能芯片的封装应用。

Claims

1. An improved chip package, characterized by It includes, from top to bottom, a filter element (1), an image sensor chip (2), a covered plastic support frame (3), and a substrate circuit assembly (4); The encapsulated plastic support frame (3) is fixed to the outer edge area of ​​the upper surface of the image sensor chip (2) by an adhesive layer, and the top of the encapsulated plastic support frame (3) supports and fixes the lower surface of the filter element (1). The image sensor chip (2) has multiple vertical through holes (5) spaced apart in the circumferential non-photosensitive area. Each vertical through hole (5) is embedded with a conductive metal pillar (6). The conductive metal pillar (6) is formed by filling and curing silver paste material and its top extends to the upper surface of the image sensor chip (2). The conductive metal pillar (6) has a sheet-like metal pad (7) bonded to its top end, and spherical metal bumps (8) are formed on the upper surface of each sheet-like metal pad (7) by welding. The substrate circuit assembly (4) includes an insulating substrate layer and a mesh copper conductive layer (9) embedded therein, and the mesh copper conductive layer (9) is provided with a plurality of circular connecting pieces (10). The bottom end of the conductive metal column (6) extends through the middle of the insulating substrate layer and forms an electrical connection with the upper surface of the corresponding circular connecting piece (10); The lower surface of the mesh copper conductive layer (9) is connected to a plurality of hemispherical metal pads (11), and the bottom of each hemispherical metal pad (11) is exposed on the lower surface of the insulating substrate layer to form an external electrical contact.

2. The improved chip package of claim 1, wherein: The image sensing chip (2) is a CIS photosensitive chip.

3. The improved chip package of claim 1, wherein: The mesh copper conductive layer (9) also includes a number of mesh-distributed copper wires (12), which connect each of the circular connecting pieces (10).

4. The improved chip package of claim 1, wherein: The encapsulated plastic support frame (3) is embedded with a three-dimensional interwoven metal microwire network, wherein the diameter of a single microwire in the metal microwire network is 20-50μm; The metal microfilament network consists of at least two sets of microfilament bundles with different orientations. The first microfilament bundle is distributed at equal intervals along the circumference of the encapsulated plastic support frame (3). The second microfilament bundle extends radially from the edge of the image sensing chip (2) toward the filter element (1). The end of the metal microfilament network extends to the outer surface of the encapsulated plastic support frame (3).

5. The improved chip package of claim 4, wherein: The outer surface of the encapsulated plastic support frame (3) is provided with corrugated heat dissipation fins, and the inner side of the corrugated heat dissipation fins is in contact with the end of the metal microwire network.

6. The improved chip package of claim 1, wherein: A stepped transition structure (13) is provided between the circular connecting piece (10) and the conductive metal column (6). The stepped transition structure (13) is welded to the circular connecting piece (10). The stepped transition structure (13) includes a first stepped surface (131), a second stepped surface (132), and a third stepped surface (133) arranged in descending order of diameter. The circular connecting piece (10) has a groove (15) in the middle, and a central through hole (16) in the middle of the groove (15). The second stepped surface (132) is disposed in the groove (15), and the third stepped surface (133) is inserted into the central through hole (16). The lower end surface of the first stepped surface (131) is in contact with the upper end surface of the circular connecting piece (10).

7. The improved chip package of claim 6, wherein: The inner wall of the central through hole (16) is provided with an elastic conductive pad (14). The cross section of the elastic conductive pad (14) is wavy, and the crest of the elastic conductive pad (14) forms a multi-point elastic contact with the side wall of the third stepped surface (133).

8. The improved chip package of claim 1, wherein: The insulating substrate layer is provided with a three-dimensional microchannel heat dissipation structure. The three-dimensional microchannel heat dissipation structure includes a main heat dissipation channel, branch capillary channels, a driving cavity, and a piezoelectric driving structure. The piezoelectric driving structure is connected to the main heat dissipation channel through the driving cavity. The main heat dissipation channel is connected to the branch capillary channels through a trapezoidal flare structure. The main heat dissipation channel is arranged in a serpentine pattern along the projection boundary of the photosensitive area of ​​the image sensor chip (2). The branch capillary channels extend radially from the main heat dissipation channel to the center of the image sensor chip (2). The piezoelectric driving structure is disposed in the four corner areas of the insulating substrate layer. The piezoelectric driving structure includes 4-6 piezoelectric ceramic sheets.

9. The improved chip package of claim 8, wherein: The piezoelectric ceramic sheets in the piezoelectric drive structure are arranged in a fan-shaped array, with the central angle of the sector ranging from 60° to 90°, and the spacing between adjacent piezoelectric ceramic sheets ranging from 0.1 to 0.3 mm. The surface of the piezoelectric ceramic sheets is provided with a corrugated protrusion structure.

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