异质结太阳能电池
By employing a bimetallic oxide heterojunction layer in HJT solar cells, the problems of carrier transport loss and parasitic absorption are solved, thereby improving the photoelectric conversion efficiency and stability of the cells.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
- Filing Date
- 2025-03-03
- Publication Date
- 2026-07-17
AI Technical Summary
While improving photoelectric conversion efficiency, existing HJT solar cells suffer from significant carrier transport losses. The Schottky contact and parasitic absorption problems caused by the doped a-Si:H layer also affect cell performance.
A bimetallic oxide heterojunction layer, including p-type and n-type metal oxide materials, is used to replace the doped silicon layer. By designing band matching, defect passivation, and mobility gradient, the hole-selective band alignment is improved.
It improves the photoelectric conversion efficiency of the battery, increases hole conductivity, reduces electron conductivity, increases open-circuit voltage and fill factor, and enhances the stability and performance of the battery.
Smart Images
Figure CN224521499U_ABST
Abstract
Claims
1. A heterojunction solar cell, characterized by, include: Crystalline silicon substrate (10); An intrinsic amorphous silicon layer (20) is formed on the front side of the crystalline silicon substrate (10); A bimetallic oxide heterojunction layer (30) is formed on the intrinsic amorphous silicon layer (20), wherein the bimetallic oxide heterojunction layer (30) comprises a p-type metal oxide material and an n-type metal oxide material; The bimetallic oxide heterojunction layer (30) is a stacked structure formed by the first layer (31) and the second layer (32). The first layer (31) is closer to the crystalline silicon substrate (10) than the second layer (32). The first layer (31) is made of n-type metal oxide material and the second layer (32) is made of p-type metal oxide material.
2. The heterojunction solar cell according to claim 1, characterized in that, p-type metal oxide materials include nickel oxide, copper oxide, or cobalt oxide.
3. The heterojunction solar cell according to claim 1, wherein n-type metal oxide materials include molybdenum oxide, tungsten oxide, or vanadium oxide.
4. The heterojunction solar cell according to claim 1, characterized in that, The thickness of the first layer (31) is 5~10nm.
5. The heterojunction solar cell according to claim 1, wherein The thickness of the second layer (32) is 3~5nm.
6. The heterojunction solar cell according to claim 1, wherein The first layer (31) is formed by thermal evaporation deposition.
7. The heterojunction solar cell according to claim 1, wherein The second layer (32) is formed by spin coating or chemical bath deposition.
8. The heterojunction solar cell according to claim 1, wherein The intrinsic amorphous silicon layer (20) is formed by plasma-enhanced chemical vapor deposition.
9. The heterojunction solar cell according to claim 1, wherein The heterojunction solar cell further includes: A transparent conductive oxide layer (50) is formed on the bimetallic oxide heterojunction layer (30); A front electrode (60) is formed on the transparent conductive oxide layer (50).