一种QFN芯片封装结构
By designing a copper foil substrate array and microchannel network, the problems of bulkiness and insufficient heat dissipation in traditional QFN packaging structures are solved, achieving thinness, efficient heat dissipation, and low-cost manufacturing, thereby improving the reliability and adaptability of the packaging structure.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NINGBO JINSHENGXIN IMAGE TECH CO LTD
- Filing Date
- 2025-07-09
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional QFN packaging structures have shortcomings in terms of thickness, weight, and heat dissipation efficiency, making it difficult to meet the requirements of thinness, heat dissipation, and cost control, and they lack adaptable mass production solutions.
A copper foil substrate array is used as the bottom substrate. The packaging area is formed by cutting, and a filling cavity and microchannel network are set in the substrate. Combined with a cured thermally conductive insulating material and an elastic support layer, an efficient heat dissipation channel and a mechanical interlocking structure are constructed.
It achieves a thinner and lighter design while significantly improving heat dissipation performance, reducing manufacturing costs, enhancing packaging reliability and adaptability, and making it suitable for high-performance electronic products.
Smart Images

Figure CN224521502U_ABST
Abstract
Claims
1. A QFN chip package structure, characterized in that, include: Bottom substrate (1), photosensitive chip (2), sealing ring (3), filter glass (4), and filling ring (5); The bottom substrate (1) is a packaging area in a copper foil substrate array. The substrate array includes multiple packaging areas arranged in an array. Cutting lines are provided between adjacent packaging areas. Multiple electrical connection pads (6) are formed at the edge of the packaging area. A filling cavity (16) is provided in the middle of the bottom substrate (1). The filling cavity (16) is filled with a cured thermally conductive insulating material. The photosensitive chip (2) is fixedly disposed on the upper surface of the bottom substrate (1); The sealing ring (3) is disposed above the outer peripheral edge of the photosensitive area of the photosensitive chip (2); The filter glass (4) is disposed above the sealing ring (3); The filling rubber ring (5) is disposed around the outer periphery of the photosensitive chip (2), the sealing rubber ring (3) and the filter glass (4), and fixes the photosensitive chip (2), the filter glass (4), the sealing rubber ring (3) to the bottom substrate (1).
2. The QFN chip package structure of claim 1, wherein: The filling cavity (16) is provided with a pre-formed microchannel network (8), which includes interconnected serpentine or mesh-like grooves; both ends of the microchannel network (8) extend to the side edges of the bottom substrate (1) to form a cooling medium inlet and outlet; the cured thermally conductive insulating material fills the cavity space outside the microchannel network (8).
3. The QFN chip package structure of claim 2, wherein: The cross-section of the microchannel network (8) is rectangular or trapezoidal, with a depth of 50-200μm and a width of 100-500μm; After the cured thermally conductive insulating material is filled into the filling cavity (16), it comes into close contact with the microchannel network (8) to form a solid-fluid dual-phase composite cooling channel.
4. The QFN chip package structure of claim 1, wherein: An annular elastic support layer (9) is provided between the photosensitive chip (2) and the bottom substrate (1). The upper surface of the elastic support layer (9) is fixed to the bottom surface of the non-functional area of the photosensitive chip (2), and the lower surface is fixed to the upper surface of the bottom substrate (1). The solidified thermally conductive insulating material in the filling cavity (16) protrudes upward to form a thermally conductive boss (10), and a gap of 10-50μm is provided between the top surface of the thermally conductive boss (10) and the bottom surface of the functional area of the photosensitive chip (2).
5. The QFN chip package structure of claim 4, wherein: The thickness of the elastic support layer (9) is 0.2-0.5 mm; The thermally conductive boss (10) is integrally formed from the cured thermally conductive insulating material, and its top flatness deviation is ≤5μm.
6. The QFN chip packaging structure according to claim 1, characterized in that: The upper surface edge of the bottom substrate (1) is provided with an annular stepped groove (11), the annular stepped groove (11) comprising: The inner annular shallow groove (111) has a depth of 0.1-0.3 mm and a width that covers the inner edge of the pad to the mounting area of the filler ring (5); The outer annular deep groove (112) has a depth of 0.5-1.0 mm, and a metal shielding ring (12) is embedded in the groove; The filling rubber ring (5) fills and covers the annular stepped groove (11) to form a mechanical interlocking structure.
7. The QFN chip package structure of claim 6, wherein: The top of the metal shielding ring (12) is 0.05-0.15 mm lower than the upper surface of the bottom substrate (1); The lower part of the filling rubber ring (5) is embedded in the deep groove and covers the metal shielding ring (12), while the upper part extends to cover the annular shallow groove (111), forming a continuous sealing ring band; The wall of the annular shallow groove (111) is inclined at an angle of 60°-85° to the horizontal plane, forming an overflow guide surface.
8. The QFN chip package structure of claim 1, wherein: The sealing ring (3) is made of a transparent elastomer doped with phosphor, and its bottom extends out in a ring array of light guide teeth (13), which are inserted into the light guide hole (14) at the edge of the photosensitive chip (2). The top of the sealing ring (3) forms an annular reflective slope (15) of 45°±2°, which reflects the lateral incident light to the light incident area of the filter glass (4).
9. The QFN chip package structure of claim 8, wherein: The light guide teeth (13) have a height of 0.2-0.5 mm and a diameter of 0.1-0.3 mm, and the center-to-center distance between adjacent light guide teeth (13) is 0.3-0.6 mm; the surface of the annular reflective slope (15) is covered with a metal reflective film.