一种高压发光芯片
By arranging the light-emitting units in the opposite directions of each film layer in the high-voltage light-emitting diode chip and using the conductive layer as the electrode connection structure, the problem of electrode connection structure breakage is solved, the product yield is improved, and the manufacturing process and cost are simplified.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 西湖烟山科技(杭州)有限公司
- Filing Date
- 2025-06-23
- Publication Date
- 2026-07-17
AI Technical Summary
In the manufacturing process of existing high-voltage light-emitting diode chips, the electrode connection structure is prone to breakage, resulting in a decrease in product yield.
Using a conductive layer as the electrode connection structure for connecting the first and second light-emitting units in series allows the light-emitting units to be arranged in opposite directions along each film layer, avoiding breakage of the conductive layer during substrate peeling and simplifying the fabrication process by eliminating the etching step of the insulating layer.
This reduces the risk of electrode connection structure breakage, improves product yield, and simplifies the manufacturing process and reduces costs.
Smart Images
Figure CN224521515U_ABST
Abstract
Claims
1. A high voltage light emitting chip, characterized by, include: Conductive layer; At least two light-emitting units are located on the same side of the conductive layer and are both electrically connected to the conductive layer; The at least two light-emitting units include at least one first light-emitting unit and at least one second light-emitting unit; each light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer sequentially stacked in a direction perpendicular to the conductive layer; the direction in which the first semiconductor layer in the first light-emitting unit points to the second semiconductor layer is opposite to the direction in which the first semiconductor layer in the second light-emitting unit points to the second semiconductor layer.
2. The high-voltage light-emitting chip according to claim 1, characterized in that, In the first light-emitting unit, the first semiconductor layer is located between the light-emitting layer and the conductive layer, and the first semiconductor layer of the first light-emitting unit is electrically connected to the conductive layer; In the second light-emitting unit, the second semiconductor layer is located between the light-emitting layer and the conductive layer, and the second semiconductor layer of the second light-emitting unit is electrically connected to the conductive layer.
3. The high-voltage light-emitting chip according to claim 1, characterized in that, The first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer; Alternatively, the first semiconductor layer may be a P-type semiconductor layer and the second semiconductor layer may be an N-type semiconductor layer.
4. The high-voltage light-emitting chip according to claim 3, characterized in that, When the first semiconductor layer is the P-type semiconductor layer, the surface of the first semiconductor layer on the side away from the light-emitting layer further includes a current spreading layer; When the second semiconductor layer is the P-type semiconductor layer, the surface of the second semiconductor layer away from the light-emitting layer also includes a current spreading layer.
5. The high-voltage light-emitting chip according to claim 1, characterized in that, The conductive layer is a transparent conductive layer, and the light emission direction of each light-emitting unit is the direction in which the light-emitting layer of each light-emitting unit points to the conductive layer.
6. The high-voltage light-emitting chip according to claim 5, characterized in that, The conductive layer includes a first surface and a second surface disposed opposite to each other; the light-emitting unit is located on the first surface of the conductive layer; The first surface of the conductive layer is planar; the second surface of the conductive layer has a micro-nano scale pattern, which includes multiple periodically arranged nano-scale grooves.
7. The high- intensity light emitting chip of claim 1, wherein, Also includes: A Bragg reflector layer is located on the sidewall of each of the light-emitting units and on the side of each light-emitting unit away from the conductive layer; And / or, a planarization layer, located between two adjacent light-emitting units and on the side of each light-emitting unit away from the conductive layer.
8. The high- pressure light emitting chip of claim 7, wherein, Also includes: The first electrode is located on the side of the first light-emitting unit away from the conductive layer, and the first electrode is electrically connected to the first light-emitting unit through a first opening penetrating the planarization layer and / or the Bragg reflection layer. The second electrode is located on the side of the second light-emitting unit away from the conductive layer, and the second electrode is electrically connected to the second light-emitting unit through a second opening penetrating the planarization layer and / or the Bragg reflector layer.
9. The high-voltage light-emitting chip according to claim 1, characterized in that, The conductive layer includes a first region and a second region; The first region is provided with at least one first light-emitting unit, and the second region is provided with at least one second light-emitting unit; The second region is located on at least one side of the first region.
10. The high-voltage light-emitting chip according to claim 1, characterized in that, Also includes: A protective layer is located on the sidewall of the conductive layer and on the surface of the conductive layer away from the light-emitting unit.