A rapid heat treatment chamber and rapid heat treatment equipment
By setting multiple heat dissipation vents on the reflector and independently controlling the gas flow rate, the problem of temperature difference between the wafer center and edge in the peak annealing process is solved, wafer temperature uniformity is achieved, and the yield of semiconductor devices is improved.
CN224521532UActive Publication Date: 2026-07-17SHENZHEN SICARRIER IND MACHINES CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN SICARRIER IND MACHINES CO LTD
- Filing Date
- 2025-04-22
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the peak annealing process, the temperature difference between the center and the edge of the wafer is large, which affects the performance of semiconductor devices.
Method used
Multiple heat dissipation vents are set on the reflector, and heat dissipation is achieved in different areas through independently controlled heat dissipation gas pipes and flow controllers. The flow rate of heat dissipation gas at different radius positions is adjusted to make the wafer temperature more uniform.
Benefits of technology
It effectively reduces the temperature difference between the wafer center and the edge, improves the yield of semiconductor devices, and meets the temperature difference regulation requirements of special processes.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224521532U_ABST
Abstract
This application relates to the field of semiconductor manufacturing technology and discloses a rapid thermal processing chamber and rapid thermal processing equipment, including a heating device located on one side of a wafer carrier; a reflector located on the other side of the wafer carrier; the reflector and the heating device are arranged opposite to each other; at least two heat dissipation vents are provided on the surface of the reflector facing the wafer carrier, and all heat dissipation vents are connected to at least two heat dissipation gas pipes, each heat dissipation gas pipe is equipped with an independently controlled flow controller; the projection of the center of the wafer fixing area onto the reflector is the central projection, and the distances from the heat dissipation vents connected to the at least two heat dissipation gas pipes to the central projection are different. When heat dissipation gas is introduced, heat dissipation gas can be introduced at different flow rates for different areas of the wafer surface, thereby making the wafer temperature more uniform, solving the problem of excessive temperature difference, and improving the yield of wafer fabrication.
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