半导体刻蚀设备

By setting a height adjustment mechanism in the semiconductor etching equipment to adjust the distance between the upper and lower cavities, the problem of unstable etching rate caused by upper electrode consumption is solved, and the stability of the etching process is improved.

CN224521556UActive Publication Date: 2026-07-17ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ZHEJIANG ICSPROUT SEMICONDUCTOR CO LTD
Filing Date
2025-07-31
Publication Date
2026-07-17

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Abstract

一种半导体刻蚀设备,包括:刻蚀腔体,所述刻蚀腔体包括上腔体和下腔体;上电极,所述上电极设置在所述上腔体内;下电极,所述下电极包括用于承载晶圆的承载面,所述下电极设置在所述下腔体内且与所述上电极相对设置;高度调节机构,所述高度调节机构安装在所述上腔体和所述下腔体之间,所述高度调节机构用于调节所述上腔体与所述下腔体之间的距离。
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Claims

1. A semiconductor etching apparatus, characterized by comprising: include: An etching cavity, the etching cavity comprising an upper cavity and a lower cavity; Upper electrode, wherein the upper electrode is disposed within the upper cavity; The lower electrode includes a support surface for supporting the wafer, and the lower electrode is disposed in the lower cavity and is disposed opposite to the upper electrode; A height adjustment mechanism is installed between the upper cavity and the lower cavity, and the height adjustment mechanism is used to adjust the distance between the upper cavity and the lower cavity.

2. The semiconductor etching apparatus of claim 1, wherein, The height adjustment mechanism includes a bellows and a height control unit. The bellows includes a first connecting end and a second connecting end. The first connecting end is connected to the upper cavity, and the second connecting end is connected to the lower cavity. The height control unit is mounted on the bellows and is used to control the height of the bellows in a first direction, which is perpendicular to the bearing surface.

3. The semiconductor etching apparatus of claim 2, wherein The height control unit includes a lead screw module, which includes a lead screw body and a transmission mechanism. The lead screw body is arranged parallel to the first direction, and the transmission mechanism is connected to the lead screw body. The top end of the lead screw body is mounted on the first connection end.

4. The semiconductor etching apparatus of claim 3, wherein The lead screw module also includes a base, which is mounted on the second connecting end.

5. The semiconductor etching apparatus of claim 2, wherein The first connecting end is sealed to the upper cavity using a sealing ring; the second connecting end is sealed to the lower cavity using a sealing ring.

6. The semiconductor etching apparatus of claim 2, wherein, The corrugated pipe can be made of metal or plastic.

7. The semiconductor etching apparatus of claim 1, wherein The height adjustment mechanism includes multiple telescopic joints. The telescopic joint at the first end is connected to the upper cavity, and the telescopic joint at the last end is connected to the lower cavity. Adjacent telescopic joints are slidably connected.

8. The semiconductor etching apparatus of claim 7, wherein, The inner wall of the expansion joint is provided with a plurality of positioning hole groups, each group including multiple positioning holes. The outer wall of the expansion joint is provided with a plurality of positioning block groups, each group including multiple positioning blocks. The positioning holes cooperate with the positioning blocks to fix adjacent expansion joints.

9. The semiconductor etching apparatus of claim 8, wherein, When there are multiple positioning hole groups, the multiple positioning hole groups are arranged along the extension and retraction direction of the expansion joint; when there are multiple positioning block groups, the multiple positioning block groups are arranged along the extension and retraction direction of the expansion joint.

10. The semiconductor etching apparatus of claim 1, wherein, It also includes a distance sensor disposed on the upper electrode, the distance sensor being used to detect the vertical distance between the upper electrode and the bearing surface.