Semiconductor process equipment
By using an isolation hood and a purging device in semiconductor process equipment to create a closed heating environment, and by increasing the flow resistance with purging gas, the problem of easy oxidation of heating components is solved, the life of heating components is extended, and the product yield is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHUYUN TECH (SHAOXING CO LTD
- Filing Date
- 2025-08-07
- Publication Date
- 2026-07-17
AI Technical Summary
In existing semiconductor process equipment, heating devices are easily oxidized by oxidizing or corrosive process gases, resulting in a short lifespan of the heating elements and affecting the normal operation of the equipment.
An isolation hood and purging device are used to form a relatively closed heating environment. The contact between the heating element and the isolation chamber is reduced by the purging gas, which increases the flow resistance and reduces the contact between the heating element and the process gas.
It effectively extends the lifespan of the heating element, avoids the adverse effects of oxidizing or corrosive gases on the heating element, and improves product yield.
Smart Images
Figure CN224521557U_ABST
Abstract
Description
[0001] This utility model relates to the field of semiconductor manufacturing equipment technology, and in particular to a semiconductor process equipment. Background Technology
[0002] In semiconductor process equipment, heating devices are generally located below the carrier tray. The heating devices conduct heat to the carrier tray, and then transfer heat to the substrate placed on it through the carrier tray, so that the surface of the substrate reaches the temperature required for the process.
[0003] However, process gases, especially those with oxidizing or corrosive properties, can adversely affect heating equipment. For example, the current method for growing Ga2O3 materials uses metal-organic chemical vapor deposition (MOCVD), with trimethylgallium and oxygen as the source materials. Trimethylgallium and oxygen react chemically under high temperature and low pressure to form high-quality Ga2O3 material. Traditional MOCVD heating uses tungsten filaments; however, the tungsten filaments are directly exposed to high temperature and oxygen, making them very susceptible to oxidation. In severe cases, they may burn out after only a few hours of use, significantly impacting the uptime of semiconductor equipment and causing considerable problems for semiconductor process equipment. Utility Model Content
[0004] The purpose of this invention is to provide a semiconductor process equipment that can effectively isolate the heating element from the process gases outside the isolation chamber, thereby reducing or avoiding the adverse effects of oxidizing or corrosive process gases on the heating element.
[0005] To achieve the above objectives, the semiconductor process of this utility model includes a purging device, and a base, a heating element, and an isolation cover disposed within a semiconductor cavity; the base includes a carrier disk and a support ring, the heating element is disposed below the carrier disk, and the support ring is disposed at the bottom of the carrier disk and extends away from the bottom of the carrier disk to surround the periphery of the heating element; the isolation cover includes a lower isolation cover and an upper isolation cover, the upper isolation cover is disposed at the top of the lower isolation cover and extends towards the bottom of the carrier disk, and the upper isolation cover includes a plurality of isolation blades. A plurality of isolation blades are spaced apart and arranged sequentially and evenly along the circumference at the top end of the lower isolation cover, and at least part of the upper isolation cover is fitted inside the support ring so that the isolation cover and the support ring form an isolation cavity. The top end of the lower isolation cover and the bottom end of the support ring, as well as the outer wall of the upper isolation cover and the inner wall of the support ring, are spaced apart to form a curved channel. The purging device includes a purging gas supply pipeline, and the output end of the purging gas supply pipeline is disposed in the isolation cavity to deliver purging gas into the isolation cavity.
[0006] Preferably, the purging device further includes a control module, a first pressure sensor, a second pressure sensor, and a flow control valve; the flow control valve is disposed in the purging gas supply pipeline, the first pressure sensor is disposed in the isolation chamber, and the second pressure sensor is disposed in the semiconductor chamber and located outside the isolation chamber; the control module is connected to the first pressure sensor, the second pressure sensor, and the flow control valve respectively, for controlling the flow control valve according to the pressure information detected by the first pressure sensor and the second pressure sensor, so as to adjust the flow rate of the purging gas delivered by the purging gas supply pipeline.
[0007] Preferably, the orthographic projection structures of adjacent isolation blades on the support ring are spaced apart; or the isolation blade includes an isolation function part and a flow guiding part, and any two adjacent isolation blades are respectively a first isolation blade and a second isolation blade, the flow guiding part of the first isolation blade and the isolation function part of the second isolation blade are stacked and spaced apart; the orthographic projection structure of the isolation function part of the first isolation blade on the support ring is connected to the orthographic projection structure of the isolation function part of the second isolation blade on the support ring.
[0008] Preferably, the top end of the lower isolation cover is provided with a mounting groove recessed towards the bottom end of the lower isolation cover, and the annular projection structure formed by the orthographic projection of the support ring at the top end of the lower isolation cover is spaced apart from the mounting groove, and the isolation blade is detachably mounted in the mounting groove.
[0009] Preferably, the upper isolation cover includes a first isolation part and a second isolation part. One end of the first isolation part is disposed at the top end of the lower isolation cover and is parallel to the support ring. The second isolation part is disposed at the other end of the first isolation part and is inclined to the support ring. The distance between the second isolation part and the support ring increases in the direction away from the first isolation part.
[0010] Preferably, the isolation cover further includes a blocking ring, which is disposed at the top end of the lower isolation cover and surrounds the support ring, wherein the top end of the blocking ring does not exceed the bottom end of the support ring.
[0011] Preferably, the upper isolation cover further includes a shielding ring, which surrounds the top end of the lower isolation cover. A plurality of the isolation blades are spaced apart and arranged sequentially and evenly along the circumference at the top end of the shielding ring, and the axial height of the shielding ring is greater than or equal to the axial height of the gap between the top end of the lower isolation cover and the bottom end of the support ring.
[0012] Preferably, the difference between the outer diameter of the lower isolation cover and the outer diameter of the upper isolation cover is 2mm to 8mm, and the radial thickness of the support ring is 2mm to 5mm.
[0013] Preferably, the axial height of the support ring is greater than the axial height of the upper isolation cover, and the axial height of the upper isolation cover is 1 mm to 20 mm.
[0014] Preferably, the isolation blade is provided with an air guiding structure that connects to the curved channel, and the orthographic projection of the air guiding structure toward the plane where the support ring is located is all located on the support ring.
[0015] Preferably, the air guiding structure includes an air guiding hole structure, an arc-shaped air guiding structure arranged circumferentially along the upper isolation cover, and / or an air guiding slit structure extending axially along the upper isolation cover.
[0016] Preferably, the top end of the lower isolation cover is provided with a plurality of sets of mounting grooves arranged sequentially along the radial direction of the lower isolation cover, and each set of mounting grooves includes a plurality of mounting grooves arranged circumferentially along the lower isolation cover.
[0017] The beneficial effects of the semiconductor process equipment described in this utility model are as follows:
[0018] (1) This application forms a relatively closed heating environment by forming a carrier disk, support ring, isolation cover and bottom of semiconductor cavity, which can effectively isolate the heating element from the contact of process gases outside the isolation cavity. This helps to reduce or avoid the adverse effects of oxidizing or corrosive process gases on the heating element, and solves the problem of short life of heating element caused by erosive gases such as oxygen in semiconductor cavity eroding the heating element.
[0019] (2) By placing the upper isolation cover inside the support ring, this application avoids affecting the flow field of the process gas, thereby avoiding affecting the product yield.
[0020] (3) This application provides a curved channel by gaps between the top end of the lower isolation cover and the bottom end of the support ring, and between the outer wall of the upper isolation cover and the inner wall of the support ring, so as to avoid the isolation cover from interfering with the rotation of the base. At the same time, the curved channel extends the flow path of process gases outside the isolation cavity into the isolation cavity, making it difficult for oxidizing or corrosive process gases to enter the isolation cavity where the heating element is located, which helps to reduce or avoid the adverse effects of oxidizing or corrosive process gases on the heating element.
[0021] (4) By supplying purge gas into the isolation cavity, the purge gas flows from the isolation cavity to the outside of the isolation cavity through the tortuous channel, thereby increasing the flow resistance of process gases entering the isolation cavity and further reducing or preventing process gases from entering the isolation cavity where the heating element is located. This helps to reduce or prevent the adverse effects of oxidizing or corrosive process gases on the heating element.
[0022] (5) The present application includes a plurality of isolation blades in the upper isolation cover. The plurality of isolation blades are spaced apart and arranged in a circumferentially and uniformly at the top of the lower isolation cover. This facilitates the entry of the purging gas injected by the purging gas supply pipeline into the curved channel, thereby increasing the flow resistance of process gas into the isolation cavity and further reducing or preventing process gas from entering the isolation cavity where the heating element is located. Moreover, the plurality of isolation blades are evenly distributed at the top of the lower isolation cover, which also facilitates the uniform entry of the purging gas in the isolation cavity into the curved channel, thereby improving the blocking effect on process gas. Attached Figure Description
[0023] Figure 1 This is a schematic diagram of the structure of a semiconductor process equipment according to an embodiment of the present invention.
[0024] Figure 2 This is a structural block diagram of a semiconductor process equipment according to an embodiment of the present invention.
[0025] Figure 3 This is a schematic diagram of the structure of the isolation shield in the semiconductor process equipment according to an embodiment of the present invention. Figure 1 .
[0026] Figure 4 This is a schematic diagram of the structure of the isolation shield in the semiconductor process equipment according to an embodiment of the present invention. Figure 2 .
[0027] Figure 5 This is a schematic diagram of the projection structure of the upper isolation shield and the support ring at the top of the lower isolation shield in a semiconductor process equipment according to some embodiments of the present invention.
[0028] Figure 6 This is a schematic diagram of the structure of the isolation blade in the semiconductor process equipment according to an embodiment of the present invention. Figure 3 .
[0029] Figure 7 This is a schematic diagram showing the projection structure of the upper isolation shield and the support ring at the top of the lower isolation shield in a semiconductor process apparatus according to other embodiments of the present invention.
[0030] Figure 8This is a schematic diagram of the projection of the support ring at the top of the lower isolation cover and the structure of the mounting groove in the semiconductor process equipment of some embodiments of this utility model.
[0031] Figure 9 This is a schematic diagram of the structure of the isolation cover and support ring in the semiconductor process equipment of some embodiments of this utility model.
[0032] Figure 10 This is a schematic diagram of the structure of the isolation cover and support ring in a semiconductor process apparatus according to other embodiments of the present invention.
[0033] Figures 1 to 10 The reference numerals in the attached figures are as follows:
[0034] 1. Base; 11. Carrier plate; 12. Support ring; 121. Annular projection structure; 13. Heating element; 2. Rotating shaft; 3. Isolation cover; 31. Lower isolation cover; 311. Mounting groove; 312. First position; 313. Second position; 32. Upper isolation cover; 321. Isolation blade; 3211. Isolation function part; 3212. Flow guide part; 3213. First isolation blade; 3214. Second isolation blade; 322. Gas guiding structure; 323. Shielding ring; 324. First isolation part; 325. Second isolation part; 33. Isolation cavity; 34. Curved channel; 35. Barrier ring; 4. Purge gas supply pipeline; 5. Control module; 6. First pressure detection element; 7. Second pressure detection element; 8. Flow control valve; 9. Semiconductor cavity; 91. Exhaust port. Detailed Implementation
[0035] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this utility model pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.
[0036] To overcome the problems existing in the prior art, this utility model provides a semiconductor process equipment that can effectively isolate the heating element from the contact of process gases outside the isolation chamber, which helps to reduce or avoid the adverse effects of oxidizing or corrosive process gases on the heating element.
[0037] In some embodiments of this utility model, reference is made to Figures 1 to 10 The semiconductor process equipment includes a purging device, and a base 1, an isolation shield 3, and a heating element 13 disposed within a semiconductor cavity 9. The base 1 includes a carrier disk 11 and a support ring 12. The heating element 13 is disposed below the carrier disk 11, and the support ring 12 is disposed at the bottom of the carrier disk 11 and extends away from the bottom of the carrier disk 11 to surround the periphery of the heating element 13. The isolation shield 3 includes a lower isolation shield 31 and an upper isolation shield 32. The upper isolation shield 32 is disposed at the top of the lower isolation shield 31 and extends towards the bottom of the carrier disk 11. The upper isolation shield 32 includes a plurality of isolation blades 321, which are spaced apart and arranged sequentially and evenly along the circumference. The upper isolation cover 32 is arranged at the top of the lower isolation cover 31 and at least part of it is fitted inside the support ring 12 so that the isolation cover 3 and the support ring 12 form an isolation cavity 33. The top of the lower isolation cover 31 and the bottom of the support ring 12 are spaced apart to form a curved channel 34, and the outer wall of the upper isolation cover 32 and the inner wall of the support ring 12 are spaced apart. The purging device includes a purging gas supply pipe 4, and the output end of the purging gas supply pipe 4 is disposed in the isolation cavity 33 to deliver purging gas into the isolation cavity 33.
[0038] In this application, the isolation cover 3 includes a lower isolation cover 31 and an upper isolation cover 32. The upper isolation cover 32 is disposed at the top of the lower isolation cover 31 and extends towards the bottom of the carrier 11. At least part of the upper isolation cover 32 is fitted inside the support ring 12 so that the isolation cover 3 and the support ring 12 form an isolation cavity 33. That is, the carrier 11, the support ring 12, the isolation cover 3 and the inner bottom of the semiconductor cavity 9 form a relatively sealed heating environment, which can effectively isolate the heating element 13 from the contact of process gases outside the isolation cavity 33. This helps to reduce or avoid the adverse effects of oxidizing or corrosive process gases on the heating element 13, and solves the problem of short life of the heating element caused by erosion such as oxidation by corrosive gases such as oxygen in the semiconductor cavity. Furthermore, those skilled in the art know that the exhaust port 91 is located at the bottom of the semiconductor cavity 9 and outside the lower isolation cover 31. Excess process gas or by-product gas above the base 1 will be discharged toward the exhaust port 91. If the upper isolation cover 32 is fitted onto the outer wall of the support ring 12, it may block or affect the gas discharge toward the exhaust port 91, thereby affecting the product yield. However, this application avoids affecting the flow field of the process gas by fitting the upper isolation cover 32 inside the support ring 12, thereby avoiding affecting the product yield.
[0039] Furthermore, this application establishes a curved channel 34 by gapping between the top end of the lower isolation cover 31 and the bottom end of the support ring 12, and between the outer wall of the upper isolation cover 32 and the inner wall of the support ring 12. This prevents the isolation cover 3 from interfering with the rotation of the base 1. At the same time, the curved channel 34 extends the flow path for process gases outside the isolation cavity 33 to enter the isolation cavity 33, making it difficult for oxidizing or corrosive process gases to enter the isolation cavity 33 where the heating element 13 is located. This helps to reduce or avoid the adverse effects of oxidizing or corrosive process gases on the heating element 13.
[0040] Furthermore, this application utilizes a purging device including a purging gas supply pipeline 4, the output end of which is located within the isolation chamber 33 to supply purging gas into the isolation chamber 33. This allows the purging gas to flow from inside the isolation chamber 33 through the tortuous channel 34 to the outside of the isolation chamber 33, thereby increasing the flow resistance of process gases entering the isolation chamber 33. This further reduces or prevents process gases from entering the isolation chamber 33 where the heating element 13 is located, thus helping to reduce or prevent the adverse effects of oxidizing or corrosive process gases on the heating element 13. Furthermore, this application includes a plurality of isolation blades 321 in the upper isolation cover 32. These isolation blades 321 are spaced apart and arranged sequentially and evenly along the circumference at the top of the lower isolation cover 31. This facilitates the entry of the purge gas injected from the purge gas supply pipeline 4 into the curved channel 34, thereby increasing the flow resistance of process gases into the isolation cavity 33 and further reducing or preventing process gases from entering the isolation cavity 33 where the heating element 13 is located. Moreover, the even distribution of the isolation blades 321 at the top of the lower isolation cover 31 also facilitates the uniform entry of the purge gas in the isolation cavity 33 into the curved channel 34, thereby improving the blocking effect on process gases.
[0041] In some embodiments of this utility model, reference is made to Figure 1 The semiconductor process equipment further includes a rotating shaft 2, which is connected to the base 1 to drive the base 1 to rotate; a lower isolation cover 31 is disposed between the rotating shaft 2 and the exhaust port 91 at the bottom of the semiconductor cavity 9. In some specific embodiments of this utility model, the lower isolation cover 31 is fixedly disposed at the bottom of the semiconductor cavity 9.
[0042] In some embodiments of this utility model, the specific structure and adapting components of the base 1, the rotating shaft 2 and the exhaust port 91 are common knowledge in the art and will not be described in detail here.
[0043] In some embodiments, the purge gas supply line 4 extends from the outside of the semiconductor cavity 9 into the isolation cavity 33 and is sealed to the semiconductor cavity 9 to ensure the airtightness of the semiconductor cavity 9.
[0044] In some embodiments of this utility model, the isolation cover 3 is a one-piece molded structure.
[0045] In some embodiments of this utility model, the isolation cover 3 is a split-type structure, that is, the lower isolation cover 31 and the upper isolation cover 32 are fixed by an installation structure.
[0046] In some embodiments of this utility model, reference is made to Figure 1 and Figure 2 The purging device further includes a control module 5, a first pressure detection element 6, a second pressure detection element 7, and a flow control valve 8; the flow control valve 8 is disposed in the purging gas supply pipeline 4, the first pressure detection element 6 is disposed in the isolation chamber 33, and the second pressure detection element 7 is disposed in the semiconductor chamber 9 and located outside the isolation chamber 33; the control module 5 is connected to the first pressure detection element 6, the second pressure detection element 7, and the flow control valve 8 respectively, for use in response to pressure signals detected by the first pressure detection element 6 and the second pressure detection element 7. The flow control valve 8 is controlled to adjust the flow rate of the purge gas supplied by the purge gas supply pipeline 4. This allows the purge gas to flow from inside the isolation chamber 33 to outside the isolation chamber 33 by controlling the gas pressure inside the isolation chamber 33 to be slightly greater than the gas pressure outside the isolation chamber 33. This increases the flow resistance of process gases entering the isolation chamber 33, further reducing or preventing process gases from entering the isolation chamber 33 where the heating element 13 is located. This helps to reduce or prevent the adverse effects of oxidizing or corrosive process gases on the heating element 13.
[0047] In some embodiments of this utility model, the purging device further includes a purging gas supply end, and the purging gas supply pipeline 4 is connected to the purging gas supply end to deliver purging gas into the isolation cavity 33; the specific structure and adapter components of the purging gas supply end are common knowledge in the art and will not be described in detail here.
[0048] In some embodiments of this utility model, reference is made to Figure 1The output end of the purge gas supply line 4 is located near the upper isolation cover 32. In some specific embodiments, the output end of the purge gas supply line 4 is positioned towards the curved channel 34, which helps to increase the flow resistance of process gases entering the isolation chamber 33, further reducing or preventing process gases from entering the isolation chamber 33 where the heating element 13 is located, and also reducing or preventing the purge gas from being sprayed towards the heating element 13, thus avoiding any impact on the heating element 13. More specifically, the output end of the purge gas supply line 4 (i.e., the end face located inside the isolation chamber 33) is located below the heating element 13, and its height is no higher than the upper isolation cover 32.
[0049] In some embodiments of this utility model, reference is made to Figure 4 The isolation blade 321 is provided with an air guiding structure 322 that connects to the curved channel 34.
[0050] In some embodiments, the orthographic projection of the gas guiding structure 322 onto the plane containing the support ring 12 is located on the support ring 12. That is, the functional portion of the isolation blade 321 opposite the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 is not provided with the gas guiding structure 322. This allows process gases to enter through the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 and be blocked by the isolation blade 321, thereby reducing or preventing process gases from outside the isolation cavity 33 from flowing into it. Furthermore, the purge gas entering the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 from each gas guiding structure 322 also further blocks the flow of process gases towards the base.
[0051] In some embodiments of this utility model, the air guiding structure 322 includes, for example: Figure 4 The illustrated air guide hole structure, the arc-shaped air guide structure arranged circumferentially along the upper isolation cover 32, and / or the air guide slit structure extending axially along the upper isolation cover 32, etc.
[0052] In some embodiments of this utility model, reference is made to Figure 3The upper isolation cover 32 further includes a shielding ring 323, which surrounds the top end of the lower isolation cover 31. A plurality of isolation blades 321 are spaced apart and arranged sequentially and evenly along the circumference at the top end of the shielding ring 323. The axial height of the shielding ring 323 is greater than or equal to the axial height of the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12. This ensures that process gases entering from the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 are blocked by the shielding ring 323, thereby preventing process gases entering the gap between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 from flowing into the isolation cavity 33 through the gap between adjacent isolation blades 321.
[0053] In some embodiments of this utility model, reference is made to Figure 4 and Figure 5 The adjacent isolation blades 321 are spaced apart by the orthographic projection structure on the support ring 12, that is, the upper isolation cover 32 is a grid structure. The structure is simple and facilitates the purge gas to enter the curved channel 34, thereby increasing the flow resistance of process gas and other gases into the isolation cavity 33, and further reducing or preventing process gas and other gases from entering the isolation cavity 33 where the heating element 13 is located.
[0054] In other embodiments of this utility model, reference is made to Figure 6 and Figure 7 The isolation blade 321 includes an isolation function portion 3211 and a flow guiding portion 3212. Any two adjacent isolation blades 321 are respectively a first isolation blade 3213 and a second isolation blade 3214. The flow guiding portion 3212 of the first isolation blade 3213 and the isolation function portion 3211 of the second isolation blade 3214 are stacked and spaced apart. The orthographic projection structure of the isolation function portion 3211 of the first isolation blade 3213 on the support ring 12 is similar to that of the isolation function portion 3211 of the second isolation blade 3214. The orthographic projection structure on the support ring 12 is connected, that is, the upper isolation cover 32 is a louver structure. The flow guide part 3212 of the first isolation blade 3213 and the isolation function part 3211 of the second isolation blade 3214 are stacked and spaced apart to form a flow guide effect on the purge gas. This is beneficial to allow the purge gas to enter the curved channel 34 from the isolation cavity 33, while blocking the process gas in the curved channel 34 from entering the isolation cavity 33, further reducing or avoiding the process gas from entering the isolation cavity 33 where the heating element 13 is located.
[0055] In some embodiments of this utility model, reference is made to Figure 7The isolation blade 321 includes an arc-shaped blade. In two adjacent arc-shaped blades, one arc-shaped blade bends toward the other arc-shaped blade, and the distance between two adjacent arc-shaped blades gradually decreases from the inner wall of the lower isolation cover 31 toward the outer wall of the lower isolation cover 31.
[0056] In some embodiments of this utility model, reference is made to Figures 4 to 7 The top end of the lower isolation cover 31 is provided with a mounting groove 311 recessed towards the bottom end of the lower isolation cover 31. The annular projection structure 121 formed by the orthographic projection of the support ring 12 onto the top end of the lower isolation cover 31 is spaced apart from the mounting groove 311 to prevent the isolation blade 321 from colliding and interfering with the support ring 12 when installed in the mounting groove 311, thus avoiding interference with the rotation of the support ring 12 and other components. The isolation blade 321 is detachably mounted in the mounting groove 311, allowing for flexible adjustment based on the internal and external pressure of the isolation chamber and the process gas conditions. Adjusting the gap between adjacent isolation blades 321, and / or adjusting the distance between the isolation blades 321 and the support ring 12 (i.e., adjusting the size of the curved channel 34 by adjusting the gap between the outer wall of the upper isolation cover 32 and the inner wall of the support ring 12), and / or adjusting the tilt angle of the isolation blades 321 relative to the support ring 12, facilitates the entry of purge gas into the curved channel 34 and creates greater flow resistance to the entry of process gases into the isolation cavity 33, further reducing or preventing process gases from entering the isolation cavity 33 where the heating element 13 is located. In some specific embodiments, a pre-reaction experiment can be performed first. Based on the experimentally measured flow resistance effect of the purge gas on the entry of process gases into the isolation cavity 33, the optimal position of the isolation blades 321 in the mounting groove 311, i.e., the optimal gap between adjacent isolation blades 321, the optimal distance between the isolation blades 321 and the support ring 12, and the optimal tilt angle of the isolation blades 321 relative to the support ring 12, etc., can be determined.
[0057] In some embodiments of this utility model, the mounting groove 311 includes, for example: Figure 7 The fan-shaped mounting slot shown, or as... Figure 5 The arc-shaped mounting groove shown.
[0058] This application allows all the isolation blades 321 to be simultaneously installed in the mounting groove 311 at the same distance from the support ring 12, or it allows one of two adjacent isolation blades 321 to be installed in the mounting groove 311 at a position closer to the support ring 12, while the other isolation blade 321 is installed in the mounting groove 311 at a position farther from the support ring 12. In some embodiments of this utility model, the upper isolation cover 32 is as follows: Figure 4 and Figure 5 The grid structure shown uses Figure 5 The adjacent first isolation blade 3213 and second isolation blade 3214 shown are illustrated as an example. The first isolation blade 3213 is installed in the mounting groove 311 at a second position 313 closer to the support ring 12, while the second isolation blade 3214 is installed in the mounting groove 311 at a first position 312 farther from the support ring 12. This increases the gap between adjacent isolation blades 321 and adjusts the distance between the isolation blades 321 and the support ring 12. In other embodiments of this utility model, the upper isolation cover 32 is as follows: Figure 6 and Figure 7 The louvered structure shown uses Figure 7 The adjacent first isolation blade 3213 and second isolation blade 3214 shown are illustrated as an example. The second isolation blade 3214 is installed in the mounting groove 311 at a first position 312 that is farther away from the support ring 12, while the first isolation blade 3213 is installed in the mounting groove 311 at a second position 313 that is closer to the support ring 12, thereby increasing the gap between the adjacent isolation blades 321. Alternatively, both the second isolation blade 3214 and the first isolation blade 3213 can be installed in the mounting groove 311 at a second position 313 that is closer to the support ring 12, which can also increase the gap between the adjacent isolation blades 321. That is, in this embodiment, the gap between the adjacent isolation blades 321 is increased by adjusting the tilt angle of the isolation blades 321 relative to the support ring 12, i.e., the rotation angle of the isolation blades 321.
[0059] In some embodiments of this utility model, reference is made to Figure 8 The top end of the lower isolation cover 31 is provided with several sets of mounting grooves arranged sequentially along the radial direction of the lower isolation cover 31. Each set of mounting grooves includes several mounting grooves 311 arranged circumferentially along the lower isolation cover 31. That is, each mounting groove 311 is independent of each other, and the isolation blade 321 can be installed in the corresponding mounting groove 311 as needed, so that the adjustment is more precise. In some specific embodiments of this utility model, refer to Figure 8 The top end of the lower isolation cover 31 is provided with three sets of mounting grooves arranged in the radial direction of the lower isolation cover 31 and sequentially from the inner side wall of the lower isolation cover 31 toward the outer side wall of the lower isolation cover 31. Each set of mounting grooves includes 18 mounting grooves 311 arranged in the circumferential direction of the lower isolation cover 31.
[0060] In some embodiments of this utility model, the orthographic projection of a portion of the isolation blades 321 on the support ring 12 overlaps with the orthographic projection of the mounting groove 311 on the support ring 12. That is, a portion of the isolation blades 321 near the lower isolation cover 31 is embedded in the mounting groove 311, avoiding gaps between the upper isolation cover 32 and the lower isolation cover 31, thereby helping to prevent process gases from outside the isolation cavity 33 from entering the isolation cavity 33.
[0061] In some embodiments of this utility model, reference is made to Figure 9 The upper isolation cover 32 includes a first isolation part 324 and a second isolation part 325. One end of the first isolation part 324 is disposed at the top end of the lower isolation cover 31 and is disposed parallel to the support ring 12. The second isolation part 325 is disposed at the other end of the first isolation part 324 and is disposed at an inclination to the support ring 12. The distance between the second isolation part 325 and the support ring 12 increases in the direction away from the first isolation part 324, so that more purging gas enters the curved channel 34, thereby preventing process gas outside the isolation cavity 33 from entering the isolation cavity 33.
[0062] In some embodiments of this utility model, reference is made to Figure 10 The isolation cover 3 further includes a blocking ring 35, which is disposed at the top end of the lower isolation cover 31 and surrounds the support ring 12. The top end of the blocking ring 35 does not exceed the bottom end of the support ring 12. That is, the height of the blocking ring 35 along the axial direction of the support ring 12 is less than or equal to the distance between the lower isolation cover 31 and the support ring 12. This helps to reduce or prevent process gases outside the isolation cavity 33 from entering the isolation cavity 33 through the gap between the lower isolation cover 31 and the support ring 12. At the same time, since the top end of the blocking ring 35 does not exceed the bottom end of the support ring 12, it reduces or prevents the flow field of process gases from being affected, thereby avoiding the impact on product yield.
[0063] In some embodiments of this utility model, reference is made to Figure 1 , Figure 9 and Figure 10 The axial distance between the top end of the lower isolation cover 31 and the bottom end of the support ring 12 can be set according to the internal and external pressure of the isolation cavity, the process gas conditions, and the vibration of the base rotation. This is to prevent the lower isolation cover 31 from being too close to the support ring 12, which would cause the support ring 12 to collide with the isolation cover 3 due to vibration caused by the base 1 rotating, and to prevent the isolation cover 3 from interfering with the rotation of the base 1.
[0064] In some embodiments of this utility model, reference is made to Figure 1 , Figure 9 and Figure 10 The distance between the outer wall of the upper isolation cover 32 and the inner wall of the support ring 12 can be set according to the internal and external pressure of the isolation cavity, the process gas conditions, and the vibration of the base rotation. This is to prevent the upper isolation cover 32 from being too close to the support ring 12, causing the support ring 12 to vibrate due to the rotation of the base 1, which would lead to the support ring 12 colliding with the isolation cover 3, and to prevent the isolation cover 3 from interfering with the rotation of the base 1.
[0065] In some embodiments of this utility model, reference is made to Figure 1 , Figure 9 and Figure 10 The distance between the virtual extension of the outer side wall of the lower isolation cover 31 extending axially toward the carrier plate 11 and the outer side wall of the support ring 12 (i.e., the difference between the radius of the lower isolation cover 31 and the radius of the support ring 12) can be set according to the process gas conditions, in order to avoid the outer side wall of the lower isolation cover 31 protruding too much from the outer side wall of the support ring 12 and thus affecting the flow field of the process gas.
[0066] In some embodiments of this utility model, reference is made to Figure 1 , Figure 9 and Figure 10 The inner diameter of the upper isolation cover 32 is equal to the inner diameter of the lower isolation cover 31, the outer diameter of the lower isolation cover 31 is greater than or equal to the outer diameter of the support ring 12, and the inner diameter of the support ring 12 is greater than the outer diameter of the upper isolation cover 32.
[0067] In some embodiments of this invention, the difference between the outer diameter of the lower isolation cover 31 and the outer diameter of the upper isolation cover 32 is 2mm to 8mm, and the radial thickness of the support ring 12 is 2mm to 5mm. This is to avoid the upper isolation cover 32 and the support ring 12 being too close, which would affect the rotation of the base 1, while also preventing the outer wall of the lower isolation cover 31 from protruding too much from the outer wall of the support ring 12, thus affecting the flow field of the process gas. In some specific embodiments of this invention, when the difference between the outer diameter of the lower isolation cover 31 and the outer diameter of the upper isolation cover 32 is 2mm, and the radial thickness of the support ring 12 is 2mm, the outer wall of the support ring 12 protrudes from the outer wall of the lower isolation cover 31. That is, only part of the annular projection structure 121 of the support ring 12 at the top of the isolation cover 3 is located at the top of the isolation cover 3, or the annular projection structure 121 of the support ring 12 at the top of the isolation cover 3 is located outside the isolation cover 3. In some other specific embodiments of this utility model, when the difference between the outer diameter of the lower isolation cover 31 and the outer diameter of the upper isolation cover 32 is 8mm, the radial thickness of the support ring 12 is 2mm, and the outer side wall of the support ring 12 is flush with the outer side wall of the lower isolation cover 31, the distance between the outer side wall of the upper isolation cover 32 and the inner side wall of the support ring 12 is 6mm.
[0068] In some embodiments of this utility model, the axial height of the support ring 12 is greater than the axial height of the upper isolation cover 32, and the axial height of the upper isolation cover 32 is 1 mm to 20 mm, so as to avoid the upper isolation cover 32 being too close to the heating element 13, thus affecting the rotation of the base 1, and to avoid the upper isolation cover 32 affecting the heating element 13.
[0069] In some embodiments of this utility model, the height of the support ring 12 along the axial direction is 1~100mm.
[0070] Although the embodiments of this utility model have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of this utility model as described in the claims. Moreover, the utility model described herein may have other embodiments and can be implemented or realized in various ways.
Claims
1. A semiconductor process apparatus, characterized by, It includes a purging device, as well as a base, heating element and isolation cover disposed within the semiconductor cavity; The base includes a carrier plate and a support ring. The heating element is disposed below the carrier plate, and the support ring is disposed at the bottom of the carrier plate and extends in a direction away from the bottom of the carrier plate to surround the periphery of the heating element. The isolation cover includes a lower isolation cover and an upper isolation cover. The upper isolation cover is disposed at the top end of the lower isolation cover and extends toward the bottom of the carrier plate. The upper isolation cover includes a plurality of isolation blades. The plurality of isolation blades are spaced apart and arranged sequentially and evenly in the circumferential direction at the top end of the lower isolation cover. At least part of the upper isolation cover is fitted inside the support ring so that the isolation cover and the support ring form an isolation cavity. The top end of the lower isolation cover and the bottom end of the support ring are spaced apart to form a curved channel, as are the outer wall of the upper isolation cover and the inner wall of the support ring. The purging device includes a purging gas supply pipeline, the output end of which is disposed in the isolation cavity to deliver purging gas into the isolation cavity.
2. The semiconductor process apparatus according to claim 1, wherein The purging device also includes a control module, a first pressure detection element, a second pressure detection element, and a flow control valve; The flow control valve is disposed in the purge gas supply pipeline, the first pressure detection element is disposed in the isolation cavity, and the second pressure detection element is disposed in the semiconductor cavity and located outside the isolation cavity; The control module is connected to the first pressure sensor, the second pressure sensor, and the flow control valve, respectively, to control the flow control valve based on the pressure information detected by the first pressure sensor and the second pressure sensor, so as to adjust the flow rate of the purge gas delivered by the purge gas supply pipeline.
3. The semiconductor process apparatus according to claim 1, wherein The adjacent isolation blades are spaced apart by the orthographic projection of their structures on the support ring; Alternatively, the isolation blade may include an isolation function part and a flow guiding part, and any two adjacent isolation blades may be a first isolation blade and a second isolation blade, wherein the flow guiding part of the first isolation blade and the isolation function part of the second isolation blade are stacked and spaced apart; The orthographic projection structure of the isolation function part of the first isolation blade on the support ring is connected to the orthographic projection structure of the isolation function part of the second isolation blade on the support ring.
4. The semiconductor process apparatus according to claim 1, wherein The top of the lower isolation cover is provided with a mounting groove that is recessed toward the bottom end of the lower isolation cover, and the annular projection structure formed by the orthographic projection of the support ring at the top of the lower isolation cover is spaced apart from the mounting groove. The isolation blade is detachably mounted in the mounting groove.
5. The semiconductor process apparatus according to claim 1, wherein The upper isolation cover includes a first isolation part and a second isolation part. One end of the first isolation part is disposed at the top end of the lower isolation cover and is parallel to the support ring. The second isolation part is disposed at the other end of the first isolation part and is inclined to the support ring. The distance between the second isolation part and the support ring increases in the direction away from the first isolation part.
6. The semiconductor process apparatus according to claim 1, wherein The isolation cover also includes a blocking ring, which is disposed at the top of the lower isolation cover and surrounds the support ring, with the top of the blocking ring not exceeding the bottom of the support ring.
7. The semiconductor process apparatus according to claim 1, wherein The upper isolation cover also includes a shielding ring, which surrounds the top end of the lower isolation cover. A plurality of the isolation blades are spaced apart and arranged in a circumferentially and evenly in the top end of the shielding ring. The axial height of the shielding ring is greater than or equal to the axial height of the gap between the top end of the lower isolation cover and the bottom end of the support ring.
8. The semiconductor process apparatus according to claim 1, wherein The difference between the outer diameter of the lower isolation cover and the outer diameter of the upper isolation cover is 2mm to 8mm, and the thickness of the support ring in the radial direction is 2mm to 5mm. And / or the axial height of the support ring is greater than the axial height of the upper isolation cover, and the axial height of the upper isolation cover is 1 mm to 20 mm.
9. The semiconductor process apparatus according to claim 1, wherein The isolation blade is provided with an air guiding structure that connects to the curved channel, and the orthographic projection of the air guiding structure toward the plane where the support ring is located is all located on the support ring. The air guiding structure includes an air guiding hole structure, an arc-shaped air guiding structure arranged circumferentially along the upper isolation cover, and / or an air guiding slit structure extending axially along the upper isolation cover.
10. The semiconductor process apparatus according to claim 4, wherein The top of the lower isolation cover is provided with several sets of mounting grooves arranged sequentially along the radial direction of the lower isolation cover, and each set of mounting grooves includes several mounting grooves arranged circumferentially along the lower isolation cover.