晶粒转移系统和晶圆载体
By designing a protective ring and an adhesion layer at the edge of the wafer carrier, the problem of die detachment during cleaning is solved, improving the stability and yield of die transfer and simplifying the process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-07-08
- Publication Date
- 2026-07-17
AI Technical Summary
During grain transfer, grains are prone to detach from the carrier due to air knife pressure during the cleaning process rather than as expected, leading to defects and reduced yield.
By setting a protective ring at the edge of the wafer carrier, combined with the structural design of the adhesion layer and dielectric layer, the dies are ensured to remain stable during the cleaning process and are prevented from detaching.
It effectively reduces grain detachment defects during the transfer process, improves yield, simplifies the process flow, and avoids additional process steps and the use of masks.
Smart Images
Figure CN224521590U_ABST
Abstract
Claims
1. A grain transfer system, characterized by, include: One carrier wafer; A patterned adhesion layer is located on an upper surface of the carrier wafer; as well as A protective ring is located on the upper surface of the carrier wafer and on one edge of the carrier wafer.
2. The die transfer system of claim 1, wherein, The protective ring has a width of 1 to 5 micrometers.
3. The die transfer system of claim 1, wherein, The protective ring has a height of 30 micrometers to 110 micrometers.
4. A wafer carrier, characterized by include: One carrier wafer; An adhesion layer is located on an upper surface of the carrier wafer, wherein the adhesion layer includes a bottom layer and a protective ring located on an edge of the carrier wafer; and A patterned dielectric layer is embedded in the bottom layer on an upper surface away from the carrier wafer.
5. The wafer carrier of claim 4, wherein, The upper surface of the patterned dielectric layer is flush with the upper surface of the bottom layer.
6. The wafer carrier of claim 4, wherein, The patterned dielectric layer has a thickness of 3,000 to 10,000 angstroms.
7. A wafer transfer system, comprising: include: One carrier wafer; An adhesion layer is located on an upper surface of the carrier wafer, wherein the adhesion layer includes a bottom layer and a protective ring located on an edge of the carrier wafer; and Multiple grains are located on the bottom layer of the adhesive layer and are surrounded by the protective ring.
8. The die transfer system of claim 7, wherein the die transfer system is configured to transfer the die from the die carrier to the substrate carrier by moving the die carrier and the substrate carrier relative to each other. The top surface of the protective ring is higher than the top surface of the plurality of grains.
9. The die transfer system of claim 7, wherein the die transfer system is configured to transfer the die from the die carrier to the substrate carrier by moving the die carrier and the substrate carrier relative to each other. The bottom layer includes a plurality of adhesive pillars that are separated from each other and are connected to the bottom surface of the plurality of grains.
10. The die transfer system of claim 7, wherein the die transfer system is configured to transfer the die from the die carrier to the substrate carrier by moving the die carrier and the substrate carrier relative to each other. Further includes: A gap-filling material is located between the sidewalls of the plurality of grains; and An etch stop layer is applied to the top surface of the plurality of grains.