晶片腐蚀工装
By designing etching fixtures that are compatible with various wafer sizes, and utilizing inclined support bars and limiting components, the problem of incomplete etching in wafer dislocation areas was solved, achieving efficient etching and accurate defect detection.
CN224521611UActive Publication Date: 2026-07-17ZHEJIANG JINGRUI ELECTRONIC MATERIALS CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ZHEJIANG JINGRUI ELECTRONIC MATERIALS CO LTD
- Filing Date
- 2025-07-10
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Inadequate etching of dislocation areas on the wafer leads to defects in detection.
Method used
A wafer etching fixture was designed, including a substrate, an inclined support bar and a limiting member. The support bar has a small contact area with the wafer, and the etching medium is allowed to flow through through holes. The limiting member prevents the wafer from floating. Grooves and protrusions are provided to accommodate wafers of various sizes. A vision inspection unit is equipped to detect defects in real time.
Benefits of technology
It improves the overall etching rate of wafers and the accuracy of defect detection, and prevents wafers from floating and being lost or damaged in corrosive media.
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Figure CN224521611U_ABST
Abstract
本申请提供了一种晶片腐蚀工装，属于碳化硅晶片加工技术领域，解决了现有技术位错区域腐蚀不到位的问题。本申请包括：基板，所述基板上设有多个通孔，所述通孔用于供腐蚀介质流通；支撑条，所述支撑条为多个且分别周向布置于所述基板上，所述支撑条相对水平面倾斜设置，多个所述支撑条用于共同支撑晶片；以及限位件，所述限位件设置于所述支撑条上且同时连接多个所述支撑条，以形成一限位区，所述限位区用于对晶片限位。本申请通过将支撑条相对水平面倾斜设置，可以适配多种尺寸的晶片，并且支撑条与晶片的接触面积较小，可以保证晶片整体的腐蚀率足够高，缺陷检测结果的准确性也得以提高。
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