一种静电基座及包括该静电吸盘的半导体设备

By using a plug assembly consisting of a porous ceramic plug and a ceramic ring in the electrostatic base, combined with an insulating spray coating, the problem of arcing in the helium gas vents was solved, and the insulation and fire resistance of the electrostatic base were improved.

CN224521612UActive Publication Date: 2026-07-17JIANGSU ALPHA-SEMICON EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGSU ALPHA-SEMICON EQUIP CO LTD
Filing Date
2025-05-16
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing electrostatic chucks are prone to arcing in the helium gas port under low pressure and high power conditions.

Method used

A plug assembly consisting of a porous ceramic plug and a ceramic ring is used in the electrostatic base and fitted into the groove on the lower surface of the dielectric layer. An insulating spray coating is applied to the adhesive layer and the upper surface of the base to enhance insulation and prevent arcing.

Benefits of technology

It effectively prevents arcing of the helium gas vent, increases the electrical insulation distance between the top helium gas vent and the metal base, improves creepage performance, reduces gaps and micropores, and enhances the insulation performance of the sidewalls.

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Abstract

本实用新型提供一种静电基座及包括该静电吸盘的半导体设备，包括：底座；介电层设置于底座上方；粘结层设置于底座和介电层之间，用于将介电层和底座固定连接；塞组件设置于底座的氦气孔内，并且穿过粘结层，向上延伸并嵌合至介电层的下表面的凹槽内；其中，所述塞组件包括多孔陶瓷塞和陶瓷环，所述陶瓷环围绕所述多孔陶瓷塞四周设置。本实用新型的塞组件嵌合至介电层的下表面的凹槽内，有利于防止打火和防止粘结层被腐蚀。
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Claims

1. An electrostatic base for use in semiconductor equipment, characterized in that, The application relates to a static base, comprising: a base; a dielectric layer arranged above the base; a bonding layer arranged between the base and the dielectric layer, used for fixedly connecting the dielectric layer and the base; a plug assembly arranged in a helium hole of the base and extending upwards through the bonding layer and being embedded into a groove of a lower surface of the dielectric layer; wherein the plug assembly comprises a porous ceramic plug and a ceramic ring arranged around the porous ceramic plug.

2. The electrostatic pedestal of claim 1, wherein, An insulating spray layer of yttrium oxide or zirconium oxide is arranged between the bonding layer and an upper surface of the base, and the bonding layer is organic resin.

3. The electrostatic pedestal of claim 1, wherein, The plug assembly is a column.

4. The electrostatic pedestal of claim 3, wherein, A side wall of the column is fixed to the helium hole through the bonding layer.

5. The electrostatic pedestal of claim 1, wherein, The ceramic ring is a non-porous and dense ceramic ring.

6. The electrostatic pedestal of claim 2, wherein, An anodic oxidation layer is further arranged between the insulating spray layer and the upper surface of the base.

7. The electrostatic pedestal of claim 1, wherein, A top helium hole is arranged above the plug assembly, and a bottom helium hole is arranged below the plug assembly and connected with a helium channel.

8. The electrostatic pedestal of any of claims 1-7, wherein, The thickness of the dielectric layer is 1-3 mm.

9. The electrostatic pedestal of any of claims 1-7, wherein, An electrode is arranged in the dielectric layer.

10. A semiconductor device, characterized by comprising: The application further relates to a static base as claimed in any one of claims 1-9. ​