一种沟槽型碳化硅功率器件
By using the heat-conducting plate and heat sink design of the trench-type silicon carbide power device, the heat dissipation problem is solved, achieving rapid heat dissipation and heat sink protection, thus extending the device's lifespan.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- REASUNOS SEMICON TECH CO LTD
- Filing Date
- 2025-08-04
- Publication Date
- 2026-07-17
AI Technical Summary
The heat generated by silicon carbide power devices during high-power operation cannot be dissipated in time, leading to device damage and reduced service life.
It adopts a grooved structure design, which includes a combination of shell, heat conduction plate and heat sink. Heat is quickly transferred to the air through the heat conduction plate and heat sink, and the heat sink is protected by a protective rod to prevent damage.
It effectively accelerates heat dissipation, improves the heat dissipation effect of devices, protects heat sinks, and extends the service life of devices.
Smart Images
Figure CN224521642U_ABST
Abstract
Claims
1. A trench silicon carbide power device, characterized by, Includes a housing (1): The housing (1) contains a silicon carbide power device body (2), and a sealing plate (3) is provided above the housing (1). Two pairs of bolts (4) pass through the sealing plate (3). The top of the housing (1) has a threaded groove that matches the bolts (4). A first heat-conducting plate (5) is provided above and below the silicon carbide power device body (2). The first heat-conducting plate (5) is fixedly connected to the inner wall of the housing (1). A heat transfer plate (6) is fixedly connected to the other side of the first heat-conducting plate (5). The other side of the heat transfer plate (6) penetrates the side wall of the housing (1) and is fixedly connected to a second heat-conducting plate (7). Several heat sinks (8) are fixedly connected to the side wall of the second heat-conducting plate (7).
2. The trench silicon carbide power device of claim 1, wherein, A pair of support blocks (9) are fixedly connected to the two side walls of the housing (1), and the pair of support blocks (9) are symmetrically arranged about the central axis of the housing (1).
3. The trench silicon carbide power device of Claim 1, wherein, A pair of positioning blocks (10) are fixedly connected to the side walls of a pair of second heat-conducting plates (7). Several protective rods (11) pass through the positioning blocks (10), and positioning cylinders (12) are threaded to both ends of the protective rods (11).
4. The trench silicon carbide power device of Claim 3, wherein, Several of the positioning cylinders (12) are provided with anti-slip texture.
5. A trench-type silicon carbide power device according to claim 3, characterized in that, Several of the protective rods (11) are equidistantly distributed on the positioning block (10).
6. The trench silicon carbide power device of Claim 1, wherein, Several heat sinks (8) are distributed at equal intervals on the second heat-conducting plate (7).