A target chamber heating device

Abstract

The utility model relates to target chamber technical field, specifically disclose a target chamber heating device. Aims at solving the problem that the temperature response of existing target chamber heat management system is lagging behind, temperature field distribution is uneven and the dynamic balance ability is insufficient under the multi-beam collaborative irradiation working condition. The target chamber heating device includes target material, support base plate, phase change material, cooling liquid circulating system and beam monitoring and control system. The support base plate is closely attached to the back of target material, and the inside is processed with the independent micro - flow channel that corresponds with each beam flow action area of target material surface one to one, and the micro - flow channel is filled with phase change material, the cooling liquid circulating system is connected with an independent micro - flow channel every way, and the beam monitoring and control system is used for real - time acquisition beam information and dynamic regulation cooling liquid flow. Through adopting above -mentioned heating device, can realize the high accuracy, high stability control to target material temperature field, has improved the uniformity and stability of target material temperature field, and has effectively prolonged the service life of target material.

Description

Technical Field

[0001] This utility model belongs to the field of target chamber technology, specifically, it relates to a target chamber heating device. Background Technology

[0002] In modern accelerators, synchrotron radiation sources, and ion implantation devices, the target chamber is the core cavity where the beam interacts with the experimental sample. Its thermal management capabilities play a crucial role in ensuring the stability and reproducibility of the experiment. In recent years, with the development of multi-beam synergistic irradiation (e.g., the combined action of proton and electron beams) and high-power pulsed beams (power density exceeding 10 kW / cm²), [further development has been achieved]. 2 With the continuous emergence of advanced experimental needs such as extreme environment simulation (covering high temperature, high pressure, corrosive atmosphere, etc.), traditional target chamber thermal control technology has encountered unprecedented severe challenges and is difficult to meet the current complex and demanding experimental conditions.

[0003] Currently, mainstream target chamber heating and cooling methods each have their own characteristics and limitations. External resistance heating combined with a water-cooled backplate heats the entire target chamber using wound resistance wires, while simultaneously cooling it with water from the back. However, this method has high thermal inertia and a response time of several seconds, making it unable to track millisecond-level beam pulses in time. Furthermore, heat is conducted from the outside in, resulting in a large temperature gradient on the target surface, easily leading to thermal stress cracking. Infrared radiation heating is suitable for high-vacuum environments, but suffers from poor heating uniformity, and its windows are easily contaminated by sputtering material, affecting the long-term stable operation of the system. Electron beam self-heating utilizes the beam's own energy to heat the target, but it cannot actively control the temperature. Under the action of multiple beams, the heat load varies greatly in different areas, leading to severely uneven temperature distribution. Especially in multi-beam collaborative experiments, beams of different energies and particle types act simultaneously on different areas of the target, with local heat flux density differences reaching more than five times. Without precise thermal compensation, this can cause a series of problems such as localized melting or phase transformation of the target, uneven thermal expansion leading to mechanical deformation, and distortion of experimental data due to temperature drift.

[0004] Based on this, the present invention proposes a target chamber heating device to solve the problems existing in the prior art. Utility Model Content

[0005] In view of this, the main objective of this utility model is to provide a target chamber heating device to solve the problems of temperature response lag, uneven temperature field distribution and insufficient dynamic balancing capability inherent in traditional target chambers under multi-beam irradiation conditions.

[0006] To achieve the above objectives, the technical solution of this utility model is implemented as follows: A target chamber heating device includes a support substrate disposed on the back side of a target material and attached to the target material. A plurality of temperature control zones are provided on the inner side of the support substrate, matching the beam action zones disposed on the target material. Microchannels are also formed on the bottom wall of the support substrate at the locations of the temperature control zones, corresponding one-to-one with the beam action zones. A phase change material and a heat exchange channel are also disposed within the microchannels. The phase change material is disposed on the side closest to the target material, and inlet and outlet liquid pipes are provided at the ends of the heat exchange channels.

[0007] In a preferred embodiment, the microchannels are spirally formed on the surface sidewall of the temperature control zone, including interconnected heat exchange channels and phase change material embedding channels.

[0008] In a preferred embodiment, the heat exchange channel is located on the side away from the target material, and the two open ends of the heat exchange channel are respectively connected to the inlet and outlet liquid pipelines to form a heat exchange system.

[0009] In a preferred embodiment, the phase change material embedding channel is located on the side close to the target material, and the phase change material is embedded in the phase change material embedding channel to form a heat transfer system.

[0010] In a preferred embodiment, a cover plate is provided at the outer opening of the phase change material embedding channel and in the channel between the heat exchange channel and the phase change material embedding channel.

[0011] In a preferred embodiment, the cover plate and the supporting substrate are made of the same material, and both are high thermal conductivity material components.

[0012] In a preferred embodiment, the thermal conductivity of both the cover plate and the support substrate is not less than 300 watts per meter Kelvin.

[0013] In a preferred embodiment, the phase change material is a low-melting-point metal alloy component.

[0014] In a preferred embodiment, the phase change material has a melting point of 10-20°C.

[0015] In a preferred embodiment, a positioning notch is further provided on the inner wall of the fitting cavity of the support substrate, and the positioning notch matches the positioning block provided on the outer surface of the target material.

[0016] Compared with the prior art, the present invention provides a target chamber heating device, which has the following beneficial effects: 1. This device employs a dual thermal management mechanism. Phase change materials, with their high latent heat absorption characteristics during solid-liquid phase transition, provide millisecond-level passive thermal buffering capabilities. This capability effectively suppresses the instantaneous surge in localized target temperature by instantly reducing the peak of rapidly changing transient heat loads. Simultaneously, the coolant circulation system actively adjusts the coolant flow rate in each independent microchannel, achieving active heat removal and equalization control at the second to minute levels.

[0017] 2. This device achieves high spatial selectivity and ultra-high precision zoned control. By corresponding the microchannels inside the support substrate with each beam action zone on the target surface, and configuring an independent coolant circulation path and control unit for each microchannel, it can perform differentiated cooling intensity adjustment for heat flux density differences that may be several times or even tens of times between different beam action zones. The control precision can reach the single point or micro-area level on the target surface. This effectively avoids the problem of temperature gradient expansion caused by lateral heat diffusion inside the target, thus ensuring that each beam action zone can independently maintain its optimal operating temperature.

[0018] 3. This device significantly improves the uniformity and stability of the target material temperature field; under the complex experimental conditions of multi-beam irradiation, it can effectively control the temperature difference between the beam action areas on the back of the target material by suppressing the instantaneous heat peak through passive phase change buffering and accurately balancing the continuous heat load through active cooling.

[0019] It solves the problems inherent in traditional target chambers, such as lag in temperature response, uneven temperature field distribution, and insufficient dynamic balancing capability under multi-beam synergistic irradiation conditions. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the target chamber heating device of this utility model; Figure 2 This is a diagram illustrating the installation effect of the target material and support substrate of this utility model. Figure 3 This is a side view of the target material of this utility model; Figure 4 This is a side view of the support substrate of this utility model; Figure 5 This is a side view of the temperature control zone of this utility model; Figure 6This is a cross-sectional view of the support substrate of this utility model; Figure 7 This utility model Figure 6 A magnified view of a section at point A in the middle; Figure 8 This is a control principle diagram of the coolant circulation system of this utility model; Figure 9 This is a schematic diagram of the control principle of the beam monitoring and control system of this utility model; Figure 10 This is a schematic diagram of the control principle of the target chamber heating device of this utility model.

[0022] [Explanation of Key Component Symbols] 1. Target material; 2. Support substrate; 3. Phase change material; 4. Coolant circulation system; 5. Beam monitoring and control system; 6. Beam action zone; 7. Independent microchannel; 8. Cover plate; 9. Inlet and outlet liquid pipelines; 10. Positioning block; 11. Positioning notch; 12. Temperature control zone; 13. Fitting cavity; 14. Heat exchange channel; 15. Phase change material embedding channel. Detailed Implementation

[0023] The structure of the target chamber heating device will be further described in detail below with reference to the accompanying drawings and embodiments of the present invention.

[0024] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0025] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments as described in this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0026] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0027] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0028] As per the instruction manual Figures 1-10 As shown, this utility model provides a technical solution: A target chamber heating device aims to achieve high-precision and high-stability control of the target material temperature field by integrating a passive phase-change buffer and an active flow regulation zoned thermal management system. This overcomes the problems of temperature response lag, uneven temperature field distribution, and insufficient dynamic equalization capability commonly found in existing technologies under multi-beam irradiation conditions. It includes a support substrate 2, a coolant circulation system 4, and a beam monitoring and control system 5. Wherein: The support substrate 2 is disposed on the back side of the target material 1 and is tightly attached to the target material 1. Several temperature control zones 12 are provided on the inner side of the support substrate 2 to cooperate with the beam action zone 6 disposed on the target material 1. Microchannels 7 are also formed on the bottom wall of the support substrate 2 at the locations of the temperature control zones 12, precisely aligned with specific beam action zones 6 on the target material 1, thereby constructing a physically independent local thermal management unit. A phase change material 3 and a heat exchange channel 14 are also disposed within the microchannel 7. The phase change material 3 is disposed on the side closest to the target material 1, serving as the core of the passive thermal buffer mechanism, absorbing and releasing latent heat through its solid-liquid phase change. The two ends of the heat exchange channel 14 are connected to the coolant circulation system 4 via inlet and outlet pipes 9. The coolant circulation system 4 is used to provide active heat removal capabilities, thereby achieving refined cooling in different zones. The beam monitoring and control system 5 is used to acquire the position and power density distribution of each beam on the target in real time, and dynamically adjust the coolant flow rate in each microchannel 7 accordingly to achieve closed-loop control.

[0029] In a preferred embodiment, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 6 As shown, the geometry and size of the target 1 are customizable and can be designed as circular, elliptical, or rectangular to adapt to different beam spot shapes. Simultaneously, the target 1 possesses excellent performance under extreme irradiation conditions, typically using tungsten (W), tantalum (Ta), beryllium (Be), highly oriented pyrolytic graphite (HOPG), or their composite alloys. These materials generally have extremely high melting points, effectively resisting localized melting caused by beam bombardment.

[0030] In a preferred embodiment, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 6 As shown, a positioning notch 11 is also provided on the inner side wall of the fitting cavity 13 of the support substrate 2. The positioning notch 11 is used in conjunction with the positioning block 10 provided on the outer surface of the target material 1, so that the positioning block 10 can be inserted into the positioning notch 11 after installation, so as to ensure that the beam action area 6 of the target material 1 can effectively correspond to the position of the temperature control area 12 on the bottom wall of the support substrate 2, thereby ensuring the temperature control effect on the beam action area 6 at the corresponding position on the target material 1.

[0031] Specifically, the supporting substrate 2 is made of a high thermal conductivity material with a thermal conductivity of not less than 300 watts per meter Kelvin (W / (m·K)). Common materials include high-purity oxygen-free copper, aluminum nitride (AlN), silicon carbide (SiC), or diamond composite materials.

[0032] In a preferred embodiment, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 and Figure 7 As shown, the microchannel 7 is spirally formed on the surface sidewall of the temperature control zone 12, including interconnected heat exchange channels 14 and phase change material embedding channels 15. The heat exchange channel 14 is located away from the target material 1, and its two open ends are respectively connected to the inlet and outlet liquid pipes 9, forming a heat exchange system for connecting the heat exchange channel 14 to the coolant circulation system 4 through the inlet and outlet liquid pipes 9. The phase change material embedding channel 15 is located near the target material 1, and a phase change material 3 is embedded in the phase change material embedding channel 15, forming a heat transfer system to absorb and release latent heat through its solid-liquid phase change. A cover plate 8 is also provided in the outer opening of the phase change material embedding channel 15 and in the channel between the heat exchange channel 14 and the phase change material embedding channel 15, so that the phase change material embedding channel 15 forms a completely sealed flow channel cavity to accommodate the phase change material, and the heat exchange channel 14 forms a closed flow channel cavity to accommodate the coolant.

[0033] Specifically, the phase change material 3 is a low-melting-point metal alloy with a melting point between 10°C and 20°C. The latent heat of phase change is a key indicator of its heat buffering capacity, requiring a minimum of 80 J / g to ensure it can absorb a large amount of heat energy during the phase change process. Preferred phase change materials are gallium-based eutectic alloys, such as gallium-indium-tin eutectic alloys, gallium-indium alloys, or composite alloys with elements such as zinc and bismuth.

[0034] Specifically, the phase change material 3 is filled using a vacuum infusion process to ensure that the microchannel cavity is completely filled with phase change material without any residual air bubbles. The presence of air bubbles significantly hinders heat conduction paths and reduces heat exchange efficiency. At room temperature, the phase change material 3 is typically solid. In use, when a beam-affected region 6 of the target 1 is bombarded by a high-energy beam, generating heat, this heat is rapidly conducted through the target 1 and the supporting substrate 2 to the corresponding independent microchannel 7 with extremely high efficiency. The phase change material 3 embedded in the channel 15 then absorbs the heat and undergoes a solid-liquid phase change. This phase change process, by absorbing a large amount of latent heat, efficiently buffers local temperature rises within milliseconds, thereby stabilizing the temperature of the beam-affected region at a preset temperature plateau close to the melting point of the phase change material. This passive buffering mechanism has a significant rapid response capability for handling transient heat peaks.

[0035] Specifically, the cover plate 8 is made of the same material as the supporting substrate 2.

[0036] In a preferred embodiment, such as Figure 1 and Figure 8 As shown, the coolant circulation system 4 consists of multiple independent subsystems. Each subsystem is connected to an independent microchannel 7 inside the support substrate 2 via inlet and outlet pipes 9, thereby achieving zoned and refined cooling. The system mainly includes a multi-channel booster pump, a temperature sensor, and a heat exchanger. The booster pump is used to increase the coolant flow rate and improve the coolant circulation efficiency. The temperature sensor is used to monitor the system's thermal state in real time, and the heat exchanger is used to supply coolant and heat the coolant.

[0037] Specifically, the coolant is preferably deionized water because it has a high specific heat capacity (about 4.18 J / (g·K)), low viscosity, low toxicity, and good compatibility with various components of the system.

[0038] It should be noted that in the coolant circulation system 4, the aforementioned booster pump, temperature sensor and heat exchanger are all existing technologies known to those skilled in the art, and their specific working principles and structures can be found in the prior art, and will not be elaborated here.

[0039] In a preferred embodiment, such as Figure 1 and Figure 9 As shown, the beam monitoring and control system 5 includes a beam monitoring module and a central controller. Wherein: The beam monitoring module transmits massive amounts of real-time data to the central controller via a high-speed data bus. It includes a beam profiler, an infrared thermal imager, and an embedded fiber grating (FBG) temperature sensor array. The beam profiler measures the spatial distribution (e.g., Gaussian or flat-top distribution), beam spot size, beam intensity, and precise location of the beam in real time. The infrared thermal imager acquires a two-dimensional temperature distribution map of the target material 1 surface non-contactly. The embedded fiber grating (FBG) temperature sensor array is directly embedded in a preset position within the supporting substrate 2 or the target material 1, closely corresponding to each beam action area 6, providing high spatial and temporal resolution local temperature data as the core input for the control system's fine-tuning.

[0040] The central controller receives and integrates real-time beam parameters and target temperature data from the beam monitoring module, as well as fluid temperature and flow rate data from the coolant circulation system. It includes a heat load identification and prediction module, a phase change material (PCM) state estimation module, and a multivariable adaptive control module. The heat load identification and prediction module, based on real-time beam parameters (e.g., beam energy, particle type, beam intensity, pulse width, repetition frequency, and beam spot size and position), combined with the material thermophysical parameters of the target 1 and the supporting substrate 2 (e.g., specific heat capacity, density, thermal conductivity), can calculate the transient and average heat flux density of each beam action zone 6 on a millisecond timescale. The PCM state estimation module, based on heat load data and embedded temperature sensor data, combined with an accurate thermophysical model of the PCM (including solid and liquid phase thermal conductivity, latent heat of phase change, density change, etc.), estimates the solid-liquid phase fraction and temperature distribution of the PCM in each microchannel in real time, and accurately determines the phase change buffer capacity margin. The multivariable adaptive control module, based on a multivariable adaptive fuzzy PID control algorithm, performs coordinated control of each independent coolant circuit.

[0041] It should be noted that in the beam monitoring and control system 5, the beam profiler, infrared thermal imager, embedded fiber grating (FBG) temperature sensor array, heat load identification and prediction module, phase change material state estimation module and multivariable adaptive control module are all existing technologies known to those skilled in the art. Their specific working principles and structures can be found in the prior art and will not be elaborated here.

[0042] The working principle of the target chamber heating device described in this utility model is based on the synergistic mechanism of passive phase change buffering and active flow regulation, specifically: When a beam-affected region 6 of the target material 1 is bombarded by a high-energy beam, the temperature of the local area of ​​the target material 1 will rise rapidly. The beam monitoring module will detect the increase in local heat load in real time with an extremely high sampling frequency, and transmit the beam parameters and target surface temperature data to the central controller via a high-speed data bus. Simultaneously, a large amount of heat generated by the high-energy beam is rapidly transferred through the target material 1 and the supporting substrate 2 to the independent microchannel 7, which is physically aligned with the beam-affected region 6, with extremely high conduction efficiency. The phase change material 3 inside the microchannel 7 then absorbs the heat and undergoes a solid-liquid phase change. During this phase change process, its high latent heat of phase change enables rapid passive buffering of the local temperature rise within milliseconds, thereby significantly suppressing the rapid rise in the local temperature of the target material 1 and stabilizing the temperature of the region near the melting point of the phase change material, effectively preventing local overheating.

[0043] While the phase change material 3 passively buffers the load, the central controller, based on real-time beam parameters, target surface temperature data, and coolant inlet and outlet temperatures obtained from the beam monitoring module, and combined with its internal thermal management algorithm, precisely calculates the required continuous active cooling intensity for the beam action zone to maintain the cyclic use of the phase change material and remove accumulated heat. The controller then generates and outputs high-precision control signals to the booster pump and flow regulating valve of the corresponding microchannel within milliseconds. Driven by the control signals, the booster pump rapidly increases the coolant flow rate, while the flow regulating valve precisely adjusts the coolant flow rate into the corresponding microchannel 7, ensuring a precise match between the coolant flow rate and the local heat load. The increased coolant flow carries a large amount of sensible heat, efficiently removing heat from the microchannel 7 and transferring it out through the heat exchanger. This process achieves continuous active removal of the local heat load, thereby maintaining the solid-liquid phase change cycle of the phase change material 3 and ensuring that the surface temperature field of the target 1 remains in a long-term dynamic equilibrium state. When the heat load in a certain beam application zone decreases or stops, for example, when the beam is transferred or shut down, the control system will correspondingly reduce or stop the coolant flow rate of the corresponding microchannel 7. At this time, the intensity of passive cooling decreases, the phase change material 3 will gradually solidify and release latent heat, so that the system can effectively recover energy and prepare for the next heat load impact under low heat load or standby conditions.

[0044] By combining passive phase change buffering with active flow regulation, achieving rapid response and precise coordination, this invention can effectively cope with complex transient and steady-state thermal loads under multi-beam irradiation, and realize high-precision and high-stability control of the temperature field of the target material 1.

[0045] All content not described in detail in this specification is prior art known to those skilled in the art, and the model parameters of each component are not specifically limited; conventional equipment can be used. Control elements not mentioned in this technical solution are prior art and are therefore not shown in the figures, and will not be described further here.

[0046] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the scope of protection of the present utility model.

Claims

1. A target chamber heating device, characterized in that, The support substrate (2) is disposed on the back side of the target material (1) and is attached to the target material (1). Several temperature control zones (12) are provided on the inner side of the support substrate (2) and match the beam action zone (6) disposed on the target material (1). Microchannels (7) are also provided on the bottom wall of the support substrate (2) at the location of the temperature control zone (12) and correspond one-to-one with the beam action zone (6). A phase change material (3) and a heat exchange channel (14) are also provided in the microchannel (7). The phase change material (3) is disposed on the side close to the target material (1), and the end of the heat exchange channel (14) is provided with an inlet / outlet liquid pipe (9).

2. The target chamber heating device as described in claim 1, characterized in that, The microchannel (7) is spirally formed on the surface sidewall of the temperature control zone (12), including interconnected heat exchange channels (14) and phase change material embedding channels (15).

3. The target chamber heating device as described in claim 2, characterized in that, The heat exchange channel (14) is located on the side away from the target material (1), and the two ends of the heat exchange channel (14) are connected to the inlet and outlet liquid pipelines (9) respectively to form a heat exchange system.

4. The target chamber heating device as described in claim 2, characterized in that, The phase change material embedding channel (15) is located on the side close to the target material (1), and the phase change material (3) is embedded in the phase change material embedding channel (15) to form a heat transfer system.

5. The target chamber heating device as described in claim 2, characterized in that, Cover plates (8) are provided in the outer opening of the phase change material embedding channel (15) and in the channel between the heat exchange channel (14) and the phase change material embedding channel (15).

6. The target chamber heating device as described in claim 5, characterized in that, The cover plate (8) is made of the same material as the supporting substrate (2), and both are high thermal conductivity material components.

7. The target chamber heating device as described in claim 6, characterized in that, The thermal conductivity of both the cover plate (8) and the support substrate (2) is not less than 300 watts per meter Kelvin.

8. The target chamber heating device as described in claim 1, characterized in that, The phase change material (3) is a low-melting-point metal alloy component.

9. A target chamber heating device as described in claim 8, characterized in that, The phase change material (3) has a melting point of 10-20°C.

10. A target chamber heating device as described in claim 1, characterized in that, The inner wall of the fitting cavity (13) of the support substrate (2) is also provided with a positioning notch (11), which matches the positioning block (10) provided on the outer surface of the target material (1).

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