MOS tube pin forming device
By designing a MOS transistor pin forming device with limiting grooves and positioning pins, the problem of mechanical stress damaging the MOS transistor during bending was solved, achieving efficient and reliable pin forming and avoiding chip damage and interconnect abnormalities.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GLORYMV ELECTRONICS
- Filing Date
- 2025-06-30
- Publication Date
- 2026-07-21
AI Technical Summary
Existing MOSFET pin forming devices are prone to mechanical stress being transferred to the chip during bending, causing problems such as microcracks in the gate oxide layer, threshold voltage drift, increased leakage current, and deformation or breakage of aluminum or copper interconnects.
A MOSFET pin forming device was designed. Through the positioning groove and positioning pin structure of the first and second components, the MOSFET body and pins are positioned to limit the position of the MOSFET body and prevent the reverse force from acting directly on the MOSFET body. This ensures that the pins are subjected to force at the root while the body is limited in position. The device adopts a square structure made of metal or epoxy material.
This effectively avoids mechanical stress damage to the MOSFET, prevents gate oxide microcracks, threshold voltage drift, and interconnect abnormalities, and improves the molding quality and reliability of the MOSFET.
Smart Images
Figure CN224525851U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of MOS transistor technology, and more specifically, it relates to a MOS transistor pin forming device. Background Technology
[0002] A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), also known as a Metal-Insulator-Semiconductor, is an electronic device. MOSFETs are commonly used in circuits. When applying MOSFET pins, specific molding and soldering onto the printed circuit board are required depending on the application. Mechanical stress during molding can transfer to the chip, potentially causing microcracks or uneven thickness in the gate oxide layer, leading to threshold voltage drift and increased leakage current. Furthermore, stress during MOSFET molding can cause deformation or breakage of the aluminum or copper interconnects, resulting in open circuits or abnormal resistance. Therefore, MOSFET molding is extremely important.
[0003] Existing technology includes a device titled "MOS Transistor Lead Forming Apparatus" with publication number CN106449429B. This device discloses a MOS transistor lead forming apparatus, comprising a base plate with a driving mechanism and an execution mechanism. The execution mechanism includes a guide shaft with guide shaft seats and fixed clamping blocks at both ends fixed to the base plate. A movable clamping block that can slide along the guide shaft is also provided on the guide shaft. The lower edge of the fixed clamping block and the movable clamping block mesh with each other. A telescopic rod is provided on the movable clamping block, and a clamping block is provided at the end of the telescopic rod. The driving mechanism includes a drive shaft seat, a drive shaft, a handle, and a drive cam linked to the handle. This invention can quickly form MOS transistor leads while offering flexible adjustment and adjustable pressure, ensuring accurate MOS transistor forming while preventing damage. In use, depending on the actual application, the driving cam can be quickly adjusted or the fixed and movable clamping blocks can be replaced to meet the forming requirements of MOS transistor lead forming with different bending angles, bending heights, and thicknesses.
[0004] However, this technology does not address the technical issues and solutions of this application. Utility Model Content
[0005] The technical problem to be solved by this utility model is to provide a MOS transistor pin forming device that is simple in structure, can conveniently and quickly realize the bending and forming of MOS transistor pins, avoids the reverse force acting on the MOS transistor body during the bending process, and avoids stress-induced damage.
[0006] To solve the above-mentioned technical problems, the technical solution adopted by this utility model is as follows:
[0007] This utility model is a MOS transistor pin forming device, including a first component and a second component. A first positioning groove is provided on one side surface of the first component, which is close to one side end. A second positioning groove is provided on one side surface of the second component, which is close to one side end. A pin positioning groove is provided between the first positioning groove and one side end of the first component.
[0008] The first component is provided with a positioning pin, and the second component is provided with a positioning hole.
[0009] The first component is provided with a positioning hole, and the second component is provided with a positioning pin.
[0010] The sum of the depth of the first positioning groove of the first component and the depth of the second positioning groove of the second component is equal to the thickness of the MOS transistor body.
[0011] The width of the first positioning groove of the first component is equal to the width of the second positioning groove of the second component, and the width of the first positioning groove is equal to the width of the MOS transistor body.
[0012] The first component has multiple pin positioning slots spaced apart, the width of the pin positioning slot is equal to the width of the MOS transistor pin, and the depth of the pin positioning slot is equal to the thickness of the MOS transistor pin.
[0013] The first and second components are structures made of metallic materials.
[0014] The first and second components are structures made of epoxy material.
[0015] The first and second components are rectangular structures.
[0016] The working principle and beneficial effects of this utility model are as follows:
[0017] The MOS transistor lead forming device of this utility model has a first positioning groove on one side surface of the first component and a second positioning groove on one side surface of the second component. The first and second components can be fitted together, and when fitted together, the first positioning groove aligns with the second positioning groove, forming a limiting cavity. The MOS transistor body is located in the limiting cavity, achieving limitation. The MOS transistor lead extends from the lead positioning groove between the first and second components to one side end, and can then be bent to form the lead. In this structure, when bending the MOS transistor lead, the first and second components limit the MOS transistor body 9 from both sides, and the joint on both sides tightly fixes the root of the MOS lead. The part of the MOS lead 10 that needs to be bent is located at the side end of the first and second components and is unrestricted, allowing the MOS lead to be bent. During lead forming, a reverse force acts on the lead root, and since the root is limited by the first and second components, the MOS transistor body is not subjected to stress. This effectively eliminates the problem of mechanical stress during the molding process being transferred to the chip, which could lead to microcracks or uneven thickness in the gate oxide layer, causing threshold voltage drift and increased leakage current. Furthermore, it avoids the problem of stress during MOSFET molding causing deformation or breakage of aluminum or copper interconnects, resulting in open circuits or abnormal resistance, thus improving the overall quality of the MOSFET. Attached Figure Description
[0018] The following is a brief explanation of the contents depicted in the accompanying drawings and the markings therein:
[0019] Figure 1 This is a schematic diagram of the MOS transistor pin forming device described in this utility model;
[0020] Figure 2 This is a schematic diagram of the structure of the first component of the MOS transistor pin forming device of this utility model;
[0021] Figure 3 This is a schematic diagram of the structure of the second component of the MOS transistor pin forming device described in this utility model;
[0022] Figure 4 This is a top view of the first component of the MOS transistor pin forming device of this utility model.
[0023] Figure 5 This is a top view of the second component of the MOS transistor pin forming device of this utility model.
[0024] The labels in the attached diagram are as follows: 1. First component; 2. Second component; 3. First positioning groove; 4. Second positioning groove; 5. Pin positioning groove; 6. Positioning pin; 7. Positioning hole; 8. MOSFET; 9. MOSFET body; 10. MOSFET pin. Detailed Implementation
[0025] The following description, with reference to the accompanying drawings, provides a more detailed explanation of the specific embodiments of this utility model, including the shape and structure of each component, the relative positions and connections between the parts, the functions and working principles of each part:
[0026] As attached Figure 1 -Appendix Figure 5 As shown, this utility model is a MOS transistor lead forming device, including a first component 1 and a second component 2. A first positioning groove 3 is provided on one side surface of the first component 1, near one side end. A second positioning groove 4 is provided on one side surface of the second component 2, near one side end. A lead positioning groove 5 is provided between the first positioning groove 3 and one side end of the first component 1. The above structure addresses the shortcomings of the prior art by proposing an improved technical solution. In the structural configuration, the first component 1 and the second component 2 are fabricated separately. The first positioning groove 3 is provided on one side surface of the first component 1, and the second positioning groove 4 is provided on one side surface of the second component 2. The first component 1 and the second component 2 can be fitted together. When fitted together, the first positioning groove 3 aligns with the second positioning groove 4, forming a limiting cavity. The MOS transistor body 9 of the MOS transistor 8 is located within the limiting cavity, achieving limiting. The MOS transistor lead 10 of the MOS transistor 8 extends from the lead positioning groove 5 between the first component 1 and the second component 2 to one side end, and can then be bent to achieve forming. In this structure, during the bending and forming of MOSFET leads, the first component 1 and the second component 2 limit the MOSFET body 9 from both sides, and the joint on both sides tightly fixes the root of the MOSFET lead 10. The portion of the MOSFET lead 10 to be bent is located on the side of the first component 1 and the second component 2, unrestricted, allowing for bending and forming. During lead forming, a reverse force acts on the root of the lead, which is limited by the first component 1 and the second component 2, preventing stress on the MOSFET body 9. This effectively eliminates the problem of mechanical stress during the forming process being transmitted to the chip, potentially causing microcracks or uneven thickness in the gate oxide layer, leading to threshold voltage drift and increased leakage current. Furthermore, it avoids the problem of stress during MOSFET forming causing deformation or breakage of aluminum or copper interconnects, resulting in open circuits or abnormal resistance, thus improving the overall quality of the MOSFET. The MOSFET lead forming device described in this invention has a simple structure, enabling convenient and quick bending and forming of MOSFET leads, avoiding the reverse force acting on the MOSFET body during bending, and preventing stress-induced damage.
[0027] The first component 1 is provided with a positioning pin 6, and the second component 2 is provided with a positioning hole 7. In the above structure, as an embodiment 1, when the first component and the second component are fitted together, the positioning pin and the positioning hole are inserted and connected to ensure that the first positioning groove and the second positioning groove are accurately aligned.
[0028] The first component 1 is provided with a positioning hole 7, and the second component 2 is provided with a positioning pin 6. In this structure, as Embodiment 2, when the first and second components are fitted together, the positioning pin and the positioning hole are inserted and connected to ensure accurate alignment of the first and second positioning grooves.
[0029] The sum of the depth of the first positioning groove 3 of the first component 1 and the depth of the second positioning groove 4 of the second component 2 is equal to the thickness of the MOS transistor body 9 of the MOS transistor 8. The width of the first positioning groove 3 of the first component 1 is equal to the width of the second positioning groove 4 of the second component 2, and the width of the first positioning groove 3 is equal to the width of the MOS transistor body 9 of the MOS transistor 8. With the above structure, when the MOS transistor 8 is located in the limiting cavity before bending and forming, the limiting cavity reliably limits the MOS transistor 8, ensuring that different surfaces of the MOS transistor 8 are constrained and will not move.
[0030] The first component 1 has multiple pin positioning slots 5 spaced apart. The width of the pin positioning slot 5 is equal to the width of the MOS transistor pin 10 of the MOS transistor 8, and the depth of the pin positioning slot 5 is equal to the thickness of the MOS transistor pin 10 of the MOS transistor 8. With this structure, when the MOS transistor 8 is located in the limiting cavity before bending and forming, the root of the pin extends through the pin positioning slot 5 to the outside of the first and second components. The pin positioning slot 5 reliably positions the root of the pin, preventing stress transmission.
[0031] The first component 1 and the second component 2 are structures made of metallic materials. As an example of embodiment 1, the above structure uses metallic materials for its components, which offer high strength and allow for reusability.
[0032] The first component 1 and the second component 2 are structures made of epoxy material. As an embodiment 2, the above structure, made of epoxy material, meets the requirements of supporting and limiting the MOSFET during lead bending, while ensuring that the component does not damage the MOSFET leads.
[0033] The first component 1 and the second component 2 are rectangular structures. In the above structure, the first component 1 and the second component 2 have corresponding positioning grooves on their mating surfaces.
[0034] The MOS transistor pin forming device of this utility model is configured by fabricating a first component 1 and a second component 2. A first positioning groove 3 is provided on one side surface of the first component 1, and a second positioning groove 4 is provided on one side surface of the second component 2. The first component 1 and the second component 2 can be fitted together. When fitted together, the first positioning groove 3 is aligned with the second positioning groove 4. The first positioning groove 3 and the second positioning groove 4 form a limiting cavity. The MOS transistor body 9 of the MOS transistor 8 is located in the limiting cavity to achieve limiting. The MOS transistor pin 10 of the MOS transistor 8 extends from the pin positioning groove 5 between the first component 1 and the second component 2 to one side end position, and then the MOS transistor pin 10 can be bent to achieve forming. In this structure, during the bending and forming of the MOSFET leads, the first component 1 and the second component 2 limit the MOSFET body 9 from both sides, and the joint on both sides tightly fixes the root of the MOSFET lead 10. The portion of the MOSFET lead 10 to be bent is located on the side of the first component 1 and the second component 2, unrestricted, allowing for bending and forming. During forming, the MOSFET lead 10 experiences a reverse force at its root, while the root of the MOSFET lead 10 is limited by the first component 1 and the second component 2, preventing stress on the MOSFET body 9. This effectively eliminates the problem of mechanical stress during the forming process potentially causing microcracks or uneven thickness in the gate oxide layer, leading to threshold voltage drift and increased leakage current. Furthermore, it avoids the problem of stress during MOSFET forming causing deformation or breakage of aluminum or copper interconnects, resulting in open circuits or abnormal resistance, thus improving the overall quality of the MOSFET.
[0035] The present invention has been described above with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.
Claims
1. A MOS transistor lead forming device, characterized in that: It includes a first component (1) and a second component (2). A first positioning groove (3) is provided on one side surface of the first component (1) and the first positioning groove (3) is close to one side end. A second positioning groove (4) is provided on one side surface of the second component (2) and the second positioning groove (4) is close to one side end. A pin positioning groove (5) is provided between the first positioning groove (3) of the first component (1) and one side end.
2. The MOS transistor lead forming apparatus according to claim 1, characterized in that: The first component (1) is provided with a positioning pin (6), and the second component (2) is provided with a positioning hole (7).
3. The MOS transistor lead forming apparatus according to claim 1 or 2, characterized in that: The first component (1) is provided with a positioning hole (7), and the second component (2) is provided with a positioning pin (6).
4. The MOS transistor lead forming apparatus according to claim 1 or 2, characterized in that: The sum of the depth of the first positioning groove (3) of the first component (1) and the depth of the second positioning groove (4) of the second component (2) is equal to the thickness of the MOS tube body (9) of the MOS tube (8).
5. The MOS transistor lead forming apparatus according to claim 4, characterized in that: The width of the first positioning groove (3) of the first component (1) is equal to the width of the second positioning groove (4) of the second component (2), and the width of the first positioning groove (3) is equal to the width of the MOS tube body (9) of the MOS tube (8).
6. The MOS transistor lead forming apparatus according to claim 4, characterized in that: The first component (1) has multiple pin positioning slots (5) with gaps between them. The width of the pin positioning slot (5) is equal to the width of the MOS pin (10) of the MOS transistor (8), and the depth of the pin positioning slot (5) is equal to the thickness of the MOS pin (10) of the MOS transistor (8).
7. The MOS transistor lead forming apparatus according to claim 1 or 2, characterized in that: The first component (1) and the second component (2) are structures made of metallic materials.
8. The MOS transistor lead forming apparatus according to claim 1 or 2, characterized in that: The first component (1) and the second component (2) are structures made of epoxy material.
9. The MOS transistor lead forming apparatus according to claim 1 or 2, characterized in that: The first component (1) and the second component (2) are square structures.