Wafer transfer structure of an spts device and spts device

Abstract

The utility model provides a kind of wafer transmission structure and SPTS equipment of SPTS equipment, including variable-diameter cylindrical body, its bottom is equipped with annular base, the variable-diameter cylindrical body includes by coaxially arranged first cylinder section, second cylinder section and third cylinder section from top to bottom, the third cylinder section is peripherally opened with conveying port, the height of the conveying port is 1 / 3-1 / 2 of the variable-diameter cylindrical body height, its circumferential length is 0.3-0.5 times of the third cylinder section circumference. By setting variable-diameter cylindrical body, and in the third cylinder section opening conveying port of specific height and circumferential length, prevent the problem that wafer transmission is blocked due to structural deformation after long time use and frequent cleaning.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a wafer transfer structure for SPTS equipment and the SPTS equipment itself. Background Technology

[0002] In the semiconductor manufacturing field, PVD (Physical Vapor Deposition) equipment presents a technical challenge during wafer fabrication processes: the generation of metal deposits. Specifically, during the process, high-energy particles (such as Ar) can cause these deposits to accumulate. + When bombarding the target, metal atoms are scattered, and some atoms deposit on the inner wall of the cavity or other non-target areas. Typically, these metal deposits adhere to the baffles on the inner wall of the cavity, and these deposits accumulate and thicken over time as the equipment operates. Because the conveyor arms of the equipment need to continuously move during wafer processing inside the cavity, the cavity requires regular maintenance to ensure the stability of the equipment's operation.

[0003] Currently, based on the consumption of target materials, the industry generally adopts the method of periodically replacing cavity baffles to maintain the stability of the internal environment of the cavity. However, in practical applications, after prolonged use and frequent cleaning, the baffles inevitably undergo slight deformation. When the arm transfers wafers into the process chamber, the wafers need to enter the cavity through a small-diameter transfer port on the baffle. At this time, if the baffle is not installed properly or is deformed, it can easily obstruct the wafer transfer process, thereby triggering a transfer alarm and seriously affecting the wafer transfer efficiency and the continuity of process processing. Utility Model Content

[0004] In order to solve all or part of the problems of the prior art, this utility model provides a wafer transport structure and SPTS equipment. By setting a variable diameter cylindrical body and opening a transport port with a specific height and circumferential length in the third cylindrical section, the wafer transport obstruction problem caused by structural deformation after long-term use and frequent cleaning is prevented.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A wafer transport structure for an SPTS device includes a variable-diameter cylindrical body with a circular base at its bottom. The variable-diameter cylindrical body includes a first cylindrical section, a second cylindrical section, and a third cylindrical section arranged coaxially from top to bottom. The third cylindrical section has a transport port circumferentially. The height of the transport port is 1 / 3 to 1 / 2 of the height of the variable-diameter cylindrical body, and its circumferential length is 0.3 to 0.5 times the circumference of the third cylindrical section.

[0007] The first cylindrical section includes an upper section and a lower section. The inner ring diameter of the upper section is larger than that of the lower section, and the height of the upper section is smaller than that of the lower section.

[0008] The bottom of the lower section is connected to the top of the second cylindrical section, and an annular protrusion is provided on the outer ring at the connection between the lower section and the second cylindrical section.

[0009] The inner ring diameter at the top of the second cylindrical section is larger than that at the bottom, and the middle section of its inner ring forms a transition cone surface. The cone inclination angle α of the transition cone surface satisfies: 45°≤α≤75°.

[0010] The outer ring of the second cylindrical section is stepped, including a first stepped section and a second stepped section, and the outer ring diameter of the first stepped section is larger than the outer ring diameter of the second stepped section.

[0011] The third cylindrical section is cylindrical, and its inner ring diameter is smaller than that of the bottom inner ring diameter of the second cylindrical section. The top of the third cylindrical section is connected to the bottom of the second cylindrical section through a connecting part.

[0012] The circular base includes an inner ring surface and an outer ring surface. The diameter of the inner ring surface is smaller than the inner ring diameter of the third cylindrical section. The diameter of the outer ring surface is between the outer ring diameter of the third cylindrical section and the bottom outer ring diameter of the second cylindrical section. The bottom of the third cylindrical section is connected between the inner ring surface and the outer ring surface.

[0013] The conveying port is a long, hollowed-out structure with a circumferential length L that satisfies the following condition: 255mm ≤ L ≤ 265mm.

[0014] The variable-diameter cylindrical body is made of either stainless steel or aluminum alloy; the annular base is made of either stainless steel or aluminum alloy.

[0015] This utility model also provides an SPTS device, including the wafer transport structure, transport arm and process chamber described above, wherein the transport arm is used to carry wafers into the process chamber through the transport port. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the specific embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a side view of the wafer transmission structure of an SPTS device according to an embodiment of the present invention.

[0018] Figure 2 This is a cross-sectional view of the wafer transmission structure of an SPTS device according to an embodiment of the present invention.

[0019] Figure 3 This is a schematic diagram of the wafer transmission structure of an SPTS device according to an embodiment of the present invention.

[0020] Figure 4 This is a top view of the wafer transmission structure of an SPTS device according to an embodiment of the present invention.

[0021] Reference numerals: 1. First cylindrical section; 101. Upper section; 102. Lower section; 2. Second cylindrical section; 201. First stepped section; 202. Second stepped section; 3. Third cylindrical section; 4. Circular base; 5. Conveying port; 6. Annular protrusion. Detailed Implementation

[0022] The technical solutions in specific embodiments of this utility model will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0023] The implementation of this utility model will be described in detail below with reference to specific embodiments.

[0024] Example 1

[0025] In this embodiment of the utility model, in conjunction with reference to the reference Figures 1 to 4 As shown, a wafer transport structure for an SPTS (Special Power Supply System) device is provided. This structure mainly consists of a variable-diameter cylindrical body and a circular base 4, with the circular base 4 fixedly connected to the bottom of the variable-diameter cylindrical body to provide a stable mounting support foundation for the entire transport structure. The variable-diameter cylindrical body is coaxially arranged with a first cylindrical section 1, a second cylindrical section 2, and a third cylindrical section 3 from top to bottom. A transport port 5 is provided circumferentially in the third cylindrical section 3. The height of the transport port 5 is precisely designed, occupying 1 / 3 to 1 / 2 of the overall height of the variable-diameter cylindrical body, reserving reasonable space for wafer transport while ensuring structural strength; its circumferential length is 0.3-0.5 times the circumference of the third cylindrical section 3 to ensure smooth entry and exit of wafers from the transport structure. In this embodiment, the transport port 5 adopts a long, strip-shaped hollow structure. This structural design effectively reduces obstacles during transport and significantly improves wafer transport efficiency. After repeated tests and optimizations, the circumferential length L of the transmission port 5 was precisely limited to between 255mm and 265mm, with the optimal value being 260mm. This size range is suitable for 8-inch wafers, ensuring stable wafer transmission while avoiding problems such as unstable transmission and reduced structural strength caused by improper size design.

[0026] In this embodiment, the first cylindrical section 1 adopts a stepped variable diameter design, consisting of an upper section 101 and a lower section 102 coaxially arranged. Specifically, the inner ring diameter of the upper section 101 is set to 336mm, and the inner ring diameter of the lower section 102 is set to 351mm. The height of the upper section 101 is less than the height of the lower section 102, giving the first cylindrical section 1 a stable shape that is narrower at the top and wider at the bottom for installation and positioning. The bottom of the lower section 102 is securely connected to the top of the second cylindrical section 2 by welding or integral molding. An annular protrusion 6 is provided at the outer ring position of the connection between the lower section 102 and the second cylindrical section 2. This annular protrusion 6 is used for precise assembly with the process chamber of the equipment to achieve a reliable connection between the transmission structure and the process chamber.

[0027] The second cylindrical section 2 adopts a variable diameter structure design, with the inner ring diameter at the top being 345mm and the inner ring diameter at the bottom being 326mm, creating a change in inner diameter from top to bottom. The middle section of the inner ring of the second cylindrical section 2 forms a transitional conical surface. The inclination angle α of this transitional conical surface has been rigorously optimized to meet the specific range of 45°≤α≤75°. This angle setting facilitates disassembly. The outer ring of the second cylindrical section 2 has a stepped structure, specifically including a first stepped section 201 and a second stepped section 202. The outer ring diameter of the first stepped section 201 is set to 349mm, and the outer ring diameter of the second stepped section 202 is set to 342mm. This design not only enhances the overall structural strength of the second cylindrical section 2 but also provides a precise positioning reference for assembly with the process chamber through the differentiated outer diameter dimensions.

[0028] The third cylindrical section 3 adopts a standard cylindrical structure design, with an inner ring diameter of 276 mm, smaller than the inner ring diameter at the bottom of the second cylindrical section 2 (326 mm), creating a specific dimensional gradient. The top of the third cylindrical section 3 is connected to the bottom of the second cylindrical section 2 via a connecting part. This design, through the contraction of the inner diameter, forms an annular limiting step at the connection between the second cylindrical section 2 and the third cylindrical section 3. This step is used to protect the edge area of ​​the internal heater of the process chamber during the assembly of the transfer structure and the process chamber, and to prevent deposits generated during the process from reacting on the side of the heater.

[0029] The annular base 4 adopts a ring-shaped structure design, including an inner ring surface and an outer ring surface. The diameter of the inner ring surface is smaller than the inner ring diameter of the third cylindrical section 3, and the diameter of the outer ring surface is between the outer ring diameter of the third cylindrical section 3 and the bottom outer ring diameter of the second cylindrical section 2. The bottom of the third cylindrical section 3 connects the inner and outer ring surfaces. Specifically, the diameter of the inner ring surface of the annular base 4 is set to 240mm, and the diameter of the outer ring surface is set to 326mm. The material of the variable-diameter cylindrical body can be selected from stainless steel or aluminum alloy, and the material of the annular base 4 can also be selected from stainless steel or aluminum alloy. In practical applications, suitable materials can be flexibly selected according to specific needs to meet the requirements of transmission structure strength, corrosion resistance, and other performance characteristics under different usage scenarios.

[0030] Example 2

[0031] An SPTS (Special Processing System) device includes the wafer transport structure, transport arm, and process chamber described in Embodiment 1. The transport arm carries wafers through the transport port 5 of the third section 3 of the transport structure into the process chamber, realizing the wafer transport and processing flow within the SPTS device.

[0032] It should be noted that, for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principle of this utility model, and these improvements and modifications also fall within the scope of protection of the claims of this utility model.

Claims

1. A wafer transmission structure for an SPTS device, characterized in that, The device includes a variable-diameter cylindrical body with a circular base (4) at its bottom. The variable-diameter cylindrical body includes a first cylindrical section (1), a second cylindrical section (2), and a third cylindrical section (3) arranged coaxially from top to bottom. The third cylindrical section (3) has a conveying port (5) in its circumference. The height of the conveying port (5) is 1 / 3 to 1 / 2 of the height of the variable-diameter cylindrical body, and its circumferential length is 0.3 to 0.5 times the circumference of the third cylindrical section (3).

2. The transmission structure according to claim 1, characterized in that, The first cylindrical section (1) includes an upper section (101) and a lower section (102). The inner ring diameter of the upper section (101) is larger than the inner ring diameter of the lower section (102), and the height of the upper section (101) is smaller than the height of the lower section (102).

3. The transmission structure according to claim 2, characterized in that, The bottom of the lower section (102) is connected to the top of the second cylindrical section (2), and an annular protrusion (6) is provided on the outer ring at the connection between the lower section (102) and the second cylindrical section (2).

4. The transmission structure according to claim 1, characterized in that, The inner ring diameter at the top of the second cylindrical section (2) is larger than the inner ring diameter at the bottom, and the middle section of its inner ring forms a transition cone surface. The cone inclination angle α of the transition cone surface satisfies: 45°≤α≤75°.

5. The transmission structure according to claim 4, characterized in that, The outer ring of the second cylindrical section (2) is stepped, including a first stepped section (201) and a second stepped section (202), and the outer ring diameter of the first stepped section (201) is larger than the outer ring diameter of the second stepped section (202).

6. The transmission structure according to claim 1, characterized in that, The third cylindrical section (3) is cylindrical, and its inner ring diameter is smaller than the inner ring diameter at the bottom of the second cylindrical section (2). The top of the third cylindrical section (3) is connected to the bottom of the second cylindrical section (2) through a connecting part.

7. The transmission structure according to claim 1, characterized in that, The circular base (4) includes an inner ring surface and an outer ring surface. The diameter of the inner ring surface is smaller than the inner ring diameter of the third cylindrical section (3). The diameter of the outer ring surface is between the outer ring diameter of the third cylindrical section (3) and the bottom outer ring diameter of the second cylindrical section (2). The bottom of the third cylindrical section (3) is connected between the inner ring surface and the outer ring surface.

8. The transmission structure according to claim 1, characterized in that, The conveying port (5) is a long strip-shaped hollow structure, and its circumferential length L satisfies: 255mm≤L≤265mm.

9. The transmission structure according to claim 1, characterized in that, The variable diameter cylindrical body is made of either stainless steel or aluminum alloy; the annular base (4) is made of either stainless steel or aluminum alloy.

10. An SPTS device, characterized in that, Includes the wafer transport structure, transport arm and process chamber as described in any one of claims 1-9, wherein the transport arm is used to carry the wafer into the process chamber via the transport port (5).

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