A flow uniformization device and an atomic layer deposition apparatus
By designing a flow equalization device in the atomic layer deposition equipment and utilizing radially spaced inlet and outlet chambers, uniform diffusion of the reactive gas and uniformity of the film layer are achieved, solving the problem of non-uniform gas diffusion in the prior art and improving the quality of the film layer.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- NA SHE ZHI NENG ZHUANG BEI (JIANG SU) YOU XIAN GONG SI
- Filing Date
- 2025-07-09
- Publication Date
- 2026-07-21
AI Technical Summary
In existing atomic layer deposition equipment, the alternating intervals of the inlet holes result in poor uniformity and consistency of the diffusion of reactive gases, which affects the uniformity and consistency of the film thickness.
A flow equalization device is used, which ensures uniform diffusion of the reaction gas by setting the first air inlet chamber and the first air inlet hole group and the exhaust chamber and the exhaust hole group at intervals along the radial direction of the reaction chamber, and discharges the residual gas through inert gas to form a film layer of uniform thickness.
It improves the uniformity and consistency of the diffusion of reactant gases, enhances the uniformity and consistency of the film thickness, and avoids the impact of gas residue on subsequent reactions.
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Figure CN224531019U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of atomic layer deposition equipment technology, and in particular to a flow equalization device and atomic layer deposition equipment. Background Technology
[0002] Atomic layer deposition (ALD) is a method that deposits materials onto a product surface layer by layer in the form of single-atom films. During ALD, the chemical reaction of the new atomic layer is related to that of the previous atomic layer, and each reaction can deposit an atomic film of uniform thickness. Therefore, ALD has been widely used.
[0003] In related technologies, the gas distribution plate of the atomic layer deposition equipment is provided with a first air inlet group and a second air inlet group. The multiple air inlets of the first air inlet group and the multiple air inlets of the second air inlet group are arranged alternately along the inner circumference of the reaction chamber. This affects the number of air inlets in the first air inlet group and the number of air inlets in the second air inlet group, thereby affecting the diffusion uniformity and consistency of the first and second reactant gases, and consequently affecting the thickness uniformity and consistency of the first and second film layers. Utility Model Content
[0004] In view of this, the purpose of this application is to overcome the shortcomings of the prior art and provide a flow equalization device.
[0005] To solve the above-mentioned technical problems, this application provides:
[0006] A flow equalization device, comprising:
[0007] A reaction chamber, which has a reaction cavity;
[0008] An air intake chamber has a first air intake chamber and a second air intake chamber. The air intake chamber has a first air inlet and a second air inlet. The reaction chamber has a first air inlet hole group and a second air inlet hole group. The first air intake chamber is connected to the first air inlet and the first air inlet hole group, respectively. The first air inlet hole group is connected to the reaction chamber. The second air intake chamber is connected to the second air inlet and the second air inlet hole group, respectively. The second air inlet hole group is connected to the reaction chamber. The first air inlet hole group and the second air inlet hole group are arranged at intervals along the radial direction of the reaction chamber.
[0009] An exhaust chamber is provided, and an exhaust port is provided in the exhaust chamber. A set of exhaust holes is provided in the reaction chamber. The set of exhaust holes is connected to the reaction chamber. The exhaust chamber is connected to both the set of exhaust holes and the exhaust port.
[0010] In addition, the flow equalization device according to this application may also have the following additional technical features:
[0011] In some embodiments of this application, the first air inlet and the first air inlet hole group are arranged at intervals along the radial direction of the reaction chamber, and the first air inlet chamber is located between the first air inlet and the first air inlet hole group along the radial direction of the reaction chamber.
[0012] In some embodiments of this application, the second air inlet and the second air inlet hole group are arranged at intervals along the radial direction of the reaction chamber, and the second air inlet chamber is located between the second air inlet and the second air inlet hole group along the radial direction of the reaction chamber.
[0013] In some embodiments of this application, the exhaust port and the exhaust hole group are arranged at intervals along the radial direction of the reaction chamber, and the exhaust chamber is located between the exhaust port and the exhaust hole group along the radial direction of the reaction chamber.
[0014] In some embodiments of this application, the first air inlet group and the exhaust group are located at opposite ends of the reaction chamber, and the second air inlet group and the first air inlet group are located at the same end of the reaction chamber.
[0015] In some embodiments of this application, the first air inlet group includes a plurality of first air inlets, which are spaced apart along the inner circumference of the reaction chamber.
[0016] In some embodiments of this application, the second air inlet group includes a plurality of second air inlets, which are spaced apart along the inner circumference of the reaction chamber.
[0017] In some embodiments of this application, the vent group includes a plurality of vents, which are spaced apart along the inner circumference of the reaction chamber.
[0018] In some embodiments of this application, the reaction chamber includes a shell and a cover, the cover being disposed on the shell to form the reaction chamber with the shell, and the shell having a first air inlet group, a second air inlet group and an exhaust group.
[0019] Secondly, this application also provides an atomic layer deposition apparatus, including the flow equalization device described in any of the above embodiments.
[0020] Compared to existing technologies, the beneficial effects of this application are:
[0021] This application proposes a flow equalization device. By connecting a first inlet chamber to a first inlet port and a first inlet hole group, and connecting an exhaust chamber to an exhaust hole group and an exhaust port, a first reactant gas can be uniformly diffused into the reaction chamber sequentially through the first inlet port, the first inlet chamber, and the first inlet hole group. This reacts with the substrate within the reaction chamber to form a first film layer of uniform thickness. After the reaction is complete, the first reactant gas and reaction products are discharged from the flow equalization device sequentially through the exhaust hole group, the exhaust chamber, and the exhaust port. Similarly, by connecting a second inlet chamber to a second inlet port and a second inlet hole group, and connecting an exhaust chamber to an exhaust hole group and an exhaust port, a second reactant gas can be uniformly diffused into the reaction chamber sequentially through the second inlet port, the second inlet chamber, and the second inlet hole group. This reacts with the first film layer on the substrate within the reaction chamber to form a second film layer of uniform thickness. After the reaction is complete, the second reactant gas and reaction products are discharged from the flow equalization device sequentially through the exhaust hole group, the exhaust chamber, and the exhaust port.
[0022] By arranging the first and second air inlet groups at intervals along the radial direction of the reaction chamber to form two rows of air inlet groups, the number of air inlets in the first and second air inlet groups can be effectively increased, thereby improving the diffusion uniformity and consistency of the first and second reactant gases, and further improving the thickness uniformity and consistency of the first and second film layers. Attached Figure Description
[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1 An exploded schematic diagram of the flow equalization device in some embodiments of this application is shown;
[0025] Figure 2 A cross-sectional schematic diagram of the flow equalization device in some embodiments of this application is shown;
[0026] Figure 3 A bottom view schematic diagram of the flow equalization device in some embodiments of this application is shown.
[0027] Explanation of key component symbols:
[0028] 100 - Flow equalization device;
[0029] 110 - Reaction chamber; 111 - Shell; 1111 - Reaction chamber; 112 - First air inlet group; 113 - Second air inlet group; 114 - Exhaust port group;
[0030] 120 - Intake chamber; 121 - First intake chamber; 122 - Second intake chamber; 123 - First air inlet; 124 - Second air inlet;
[0031] 130 - Exhaust chamber; 131 - Exhaust chamber; 132 - Exhaust port. Detailed Implementation
[0032] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0033] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0034] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0035] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0036] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0037] like Figure 1 As shown, an embodiment of this application provides a flow equalization device 100, which is mainly used in atomic layer deposition equipment. The flow equalization device 100 includes a reaction chamber 110, an air inlet chamber 120, and an exhaust chamber 130.
[0038] See also Figure 2 and Figure 3 The reaction chamber 110 has a reaction chamber 1111, and the air intake chamber 120 has a first air intake chamber 121 and a second air intake chamber 122. The air intake chamber 120 has a first air intake port 123 and a second air intake port 124. The reaction chamber 110 has a first air intake hole group 112 and a second air intake hole group 113. The first air intake chamber 121 is connected to the first air intake port 123 and the first air intake hole group 112, respectively. The first air intake hole group 112 is connected to the reaction chamber 1111. The second air intake chamber 122 is connected to the second air intake port 124 and the second air intake hole group 113, respectively. The second air intake hole group 113 is connected to the reaction chamber 1111. The first air intake hole group 112 and the second air intake hole group 113 are arranged radially spaced apart from each other in the reaction chamber 110.
[0039] The exhaust chamber 130 has an exhaust chamber 131 and an exhaust port 132. The reaction chamber 110 has an exhaust hole group 114. The exhaust hole group 114 is connected to the reaction chamber 1111. The exhaust chamber 131 is connected to the exhaust hole group 114 and the exhaust port 132 respectively.
[0040] The flow equalization device 100 provided in the embodiments of this application connects the first air inlet chamber 121 to the first air inlet 123 and the first air inlet hole group 112 respectively, and connects the exhaust chamber 131 to the exhaust hole group 114 and the exhaust port 132 respectively. This allows the first reaction gas to diffuse evenly into the reaction chamber 1111 through the first air inlet 123, the first air inlet chamber 121 and the first air inlet hole group 112 in sequence, thereby reacting with the substrate in the reaction chamber 1111 to generate a first film layer of uniform thickness. After the reaction is completed, the first reaction gas and the reaction products can be discharged from the flow equalization device 100 through the exhaust hole group 114, the exhaust chamber 131 and the exhaust port 132 in sequence.
[0041] By connecting the second air inlet chamber 122 to the second air inlet port 124 and the second air inlet hole group 113 respectively, and connecting the exhaust chamber 131 to the exhaust hole group 114 and the exhaust port 132 respectively, the second reaction gas can be uniformly diffused into the reaction chamber 1111 through the second air inlet port 124, the second air inlet chamber 122 and the second air inlet hole group 113 in sequence, thereby reacting with the first film layer on the substrate in the reaction chamber 1111 to generate a second film layer of uniform thickness. After the reaction is completed, the second reaction gas and the reaction products can be discharged from the flow equalization device 100 through the exhaust hole group 114, the exhaust chamber 131 and the exhaust port 132 in sequence.
[0042] It should be noted that, after the first reactant gas is introduced and before the second reactant gas is introduced, an inert gas needs to be introduced into the first inlet 123. The inert gas sequentially passes through the first inlet chamber 121 and the first inlet hole group 112 into the reaction chamber 1111, and then exits from the reaction chamber 1111 through the exhaust hole group 114, the exhaust chamber 131, and the exhaust port 132 into the flow equalization device 100. This completely removes any residual first reactant gas and reaction products, thus preventing interference with the reaction between the second reactant gas and the first film layer. After the second reactant gas is introduced, an inert gas needs to be introduced into the second inlet 124. The inert gas sequentially passes through the second inlet chamber 122 and the second inlet hole group 113 into the reaction chamber 1111, and then exits from the reaction chamber 1111 through the exhaust hole group 114, the exhaust chamber 131, and the exhaust port 132 into the flow equalization device 100. This completely removes any residual second reactant gas and reaction products, thus preventing interference with the subsequent reaction between other substrates and the first reactant gas.
[0043] By arranging the first air inlet group 112 and the second air inlet group 113 radially spaced apart along the reaction chamber 110 to form two rows of air inlet groups, the number of air inlets in the first air inlet group 112 and the second air inlet group 113 can be effectively increased, thereby improving the diffusion uniformity and consistency of the first and second reacting gases, and further improving the thickness uniformity and consistency of the first and second film layers. This avoids the technical problem in the prior art where multiple air inlets in the first air inlet group and multiple air inlets in the second air inlet group are arranged alternately along the inner circumference of the reaction chamber, which affects the number of air inlets in the first air inlet group and the second air inlet group, thus affecting the diffusion uniformity and consistency of the first and second reacting gases.
[0044] like Figure 2 As shown, in one embodiment of this application, the first air inlet 123 and the first air inlet hole group 112 are arranged at intervals along the radial direction of the reaction chamber 110, and along the radial direction of the reaction chamber 110, the first air inlet chamber 121 is located between the first air inlet 123 and the first air inlet hole group 112.
[0045] In this embodiment, by arranging the first air inlet 123 and the first air inlet hole group 112 at intervals along the radial direction of the reaction chamber 110, and by arranging the first air inlet chamber 121 between the first air inlet 123 and the first air inlet hole group 112 along the radial direction of the reaction chamber 110, the first reactant gas enters the first air inlet chamber 121 through the first air inlet 123 and first collides with the cavity wall of the first air inlet chamber 121. Then, it rapidly diffuses and fills the first air inlet chamber 121 along the radial direction of the reaction chamber 110. After being filled, it then diffuses evenly into the reaction chamber 1111 through the first air inlet hole group 112, effectively ensuring the uniformity of the diffusion of the first reactant gas.
[0046] like Figure 2 As shown, in one embodiment of this application, the second air inlet 124 and the second air inlet hole group 113 are arranged at intervals along the radial direction of the reaction chamber 110, and the second air inlet chamber 122 is located between the second air inlet 124 and the second air inlet hole group 113 along the radial direction of the reaction chamber 110.
[0047] In this embodiment, by arranging the second air inlet 124 and the second air inlet hole group 113 at intervals along the radial direction of the reaction chamber 110, and by arranging the second air inlet chamber 122 between the second air inlet 124 and the second air inlet hole group 113 along the radial direction of the reaction chamber 110, the second reactant gas enters the second air inlet chamber 122 through the second air inlet 124 and first collides with the cavity wall of the second air inlet chamber 122. Then, it rapidly diffuses and fills the second air inlet chamber 122 along the radial direction of the reaction chamber 110. After being filled, it then diffuses evenly into the reaction chamber 1111 through the second air inlet hole group 113, effectively ensuring the uniformity of the diffusion of the second reactant gas.
[0048] like Figure 2 As shown, in one embodiment of this application, the exhaust port 132 and the exhaust hole group 114 are arranged at intervals along the radial direction of the reaction chamber 110, and the exhaust chamber 131 is located between the exhaust port 132 and the exhaust hole group 114 along the radial direction of the reaction chamber 110.
[0049] In this embodiment, by arranging the exhaust port 132 and the exhaust hole group 114 at intervals along the radial direction of the reaction chamber 110, and arranging the exhaust chamber 131 between the exhaust port 132 and the exhaust hole group 114 along the radial direction of the reaction chamber 110, the first or second reaction gas enters the exhaust chamber 131 uniformly through the exhaust hole group 114, collides with the cavity wall of the exhaust chamber 131, and then rapidly diffuses and fills the exhaust chamber 131 along the radial direction of the reaction chamber 110. After being filled, it is discharged through the exhaust port 132.
[0050] like Figure 1 and Figure 2 As shown, in one embodiment of this application, the first air inlet group 112 and the exhaust group 114 are located at opposite ends of the reaction chamber 110, and the second air inlet group 113 and the first air inlet group 112 are located at the same end of the reaction chamber 110. This ensures that the flow paths of both the first and second reacting gases can completely cover the substrate, thereby forming a film layer that completely covers the substrate.
[0051] like Figure 1 and Figure 2 As shown in the above embodiments of this application, the first air inlet group 112 includes a plurality of first air inlets, which are spaced apart along the inner circumference of the reaction chamber 110 to ensure the uniformity of diffusion of the first reaction gas and to enable the flow path of the first reaction gas to completely cover the substrate, thereby forming a first film layer that completely covers the substrate.
[0052] like Figure 1 and Figure 2As shown in the above embodiments of this application, the second air inlet group 113 includes a plurality of second air inlets, which are spaced apart along the inner circumference of the reaction chamber 110 to ensure the uniformity of diffusion of the second reaction gas and to enable the flow path of the second reaction gas to completely cover the first film layer, thereby forming a second film layer that completely covers the first film layer on the first film layer.
[0053] like Figure 1 and Figure 2 As shown in the above embodiments of this application, the exhaust port group 114 includes a plurality of exhaust ports, which are spaced apart along the inner circumference of the reaction chamber 110 to accommodate a plurality of first air inlets and a plurality of second air inlets, thereby enabling the flow paths of the first reaction gas and the second reaction gas to completely cover the substrate, thereby forming a film layer that completely covers the substrate.
[0054] Specifically, in any of the above embodiments of this application, the reaction chamber 110 includes a housing 111 and a cover (not shown in the figure). The cover is disposed on the housing 111 to form the reaction chamber 1111 with the housing 111. The housing 111 has a first air inlet group 112, a second air inlet group 113 and an exhaust group 114.
[0055] This application also provides an atomic layer deposition apparatus, including the flow equalization device 100 described in the above embodiments.
[0056] The atomic layer deposition apparatus has the flow equalization device 100 in any of the above embodiments, and therefore has all the beneficial effects of the flow equalization device 100, which will not be described in detail here.
[0057] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0058] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A flow equalization device, characterized in that, include: A reaction chamber, containing a reaction cavity; An air intake chamber has a first air intake chamber and a second air intake chamber. The air intake chamber has a first air inlet and a second air inlet. The reaction chamber has a first air inlet hole group and a second air inlet hole group. The first air intake chamber is connected to the first air inlet and the first air inlet hole group, respectively. The first air inlet hole group is connected to the reaction chamber. The second air intake chamber is connected to the second air inlet and the second air inlet hole group, respectively. The second air inlet hole group is connected to the reaction chamber. The first air inlet hole group and the second air inlet hole group are arranged at intervals along the radial direction of the reaction chamber. An exhaust chamber is provided, and an exhaust port is provided in the exhaust chamber. A set of exhaust holes is provided in the reaction chamber. The set of exhaust holes is connected to the reaction chamber. The exhaust chamber is connected to both the set of exhaust holes and the exhaust port.
2. The flow equalization device according to claim 1, characterized in that, The first air inlet and the first air inlet hole group are arranged at intervals along the radial direction of the reaction chamber, and the first air inlet chamber is located between the first air inlet and the first air inlet hole group along the radial direction of the reaction chamber.
3. The flow equalization device according to claim 1, characterized in that, The second air inlet and the second air inlet hole group are arranged at intervals along the radial direction of the reaction chamber, and the second air inlet chamber is located between the second air inlet and the second air inlet hole group along the radial direction of the reaction chamber.
4. The flow equalization device according to claim 1, characterized in that, The exhaust port and the exhaust hole group are arranged at intervals along the radial direction of the reaction chamber, and the exhaust chamber is located between the exhaust port and the exhaust hole group along the radial direction of the reaction chamber.
5. The flow equalization device according to claim 1, characterized in that, The first air inlet group and the exhaust group are located at opposite ends of the reaction chamber, and the second air inlet group and the first air inlet group are located at the same end of the reaction chamber.
6. The flow equalization device according to claim 5, characterized in that, The first air inlet group includes a plurality of first air inlets, which are spaced apart along the inner circumference of the reaction chamber.
7. The flow equalization device according to claim 5, characterized in that, The second air inlet group includes a plurality of second air inlets, which are spaced apart along the inner circumference of the reaction chamber.
8. The flow equalization device according to claim 5, characterized in that, The exhaust port group includes multiple exhaust ports, which are spaced apart along the inner circumference of the reaction chamber.
9. The flow equalization device according to any one of claims 1 to 8, characterized in that, The reaction chamber includes a shell and a cover. The cover is placed on the shell to form the reaction chamber. The shell has a first air inlet group, a second air inlet group, and an exhaust group.
10. An atomic layer deposition apparatus, characterized in that, The flow equalization device includes any one of claims 1 to 9.