Novel intake and exhaust equalization structure and coating equipment
By setting a longitudinal airflow structure and temperature control in the tubular PECVD equipment, the problem of uneven coating was solved, the film quality and product yield were improved, and it is suitable for the semiconductor and photovoltaic fields.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU YANGMING INTERCONNECTED INTELLIGENT SYST CO LTD
- Filing Date
- 2025-07-10
- Publication Date
- 2026-07-21
AI Technical Summary
In existing tubular PECVD equipment, the lateral flow of reaction gas leads to uneven coating and inconsistent film thickness, which affects product quality and yield.
An air intake pipe and an exhaust pipe are installed inside the furnace tube to form a longitudinal airflow. The air intake pipes are evenly distributed around the lower end of the auxiliary heating device, and the exhaust pipes are distributed around the upper end. The air intake ports are arranged in a fan-shaped array, and the exhaust ports are arranged in a ring-shaped array. Combined with a rectifier plate and a temperature control device, the airflow distribution is optimized.
This method achieves uniform distribution of reactive gases within the furnace tube, improves thin film deposition quality and performance stability, enhances coating uniformity and yield, and reduces production costs.
Smart Images

Figure CN224531020U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of coating technology, and in particular to a novel intake and exhaust homogenization structure and coating equipment. Background Technology
[0002] Tubular PECVD furnaces are key equipment for thin film deposition and are widely used in semiconductor, photovoltaic and other fields. They generate plasma through glow discharge, which causes the reactive gases to undergo chemical reactions on the substrate surface to form a thin film. The working mechanism is that in the reaction chamber, the radio frequency electric field excites the reactive gases to generate plasma, which causes the active materials to be adsorbed on the substrate to form a thin film.
[0003] For example, a novel tubular PECVD equipment, Chinese Patent Publication No. CN116623154A, has uniformly arranged air inlets at the furnace tail of the chamber structure, allowing the gas flow to enter the inner cavity laterally for coating. This prior art tubular PECVD gas flow is arranged laterally, causing the reactive gas to enter from one end, flow laterally along the furnace tube, pass over the substrate surface, and then exit. This gas flow direction easily leads to poor coating results. The laterally flowing gas is unevenly distributed within the furnace tube; near the air inlet, there is sufficient reactive gas, resulting in a thick film deposition, while further away from the air inlet, the supply is insufficient, resulting in a thin film with poor uniformity. Simultaneously, the gas flows parallel to the substrate surface, reducing the chance of collision and reaction, easily forming dead zones in the gas flow, affecting film density and crystal quality, and limiting the film growth rate. Inconsistent film composition and properties further affect product performance and quality, reducing product yield.
[0004] In summary, a new solution is needed to address the problems existing in current tubular PECVD. Summary of the Invention
[0005] This invention overcomes the shortcomings of the prior art and provides a novel intake and exhaust uniformity structure and coating equipment.
[0006] To achieve the above objectives, the technical solution adopted by this utility model is as follows: a novel inlet and outlet uniformity structure and coating equipment for plasma coating, comprising: a furnace tube, an auxiliary heating device disposed in the inner cavity of the furnace tube, and an airflow supply system disposed at the upper and lower ends of the auxiliary heating device respectively;
[0007] The airflow supply system includes: a plurality of air inlet pipes located at the lower end of the auxiliary heating device, and a plurality of exhaust pipes located at the upper end of the auxiliary heating device;
[0008] The air inlet pipe has a plurality of air inlets arrayed on it, and the exhaust pipe has a plurality of exhaust outlets. The air inlets are arranged toward the auxiliary heating device so that the airflow direction in the inner cavity of the furnace tube is from bottom to top.
[0009] In a preferred embodiment of this utility model, the air intake pipe is evenly distributed around the lower end of the auxiliary heating device, and the exhaust pipe is evenly distributed around the upper end of the auxiliary heating device.
[0010] In a preferred embodiment of the present invention, the air inlets are arranged in a fan-shaped array on the air intake pipe, and the exhaust outlets are arranged in a ring-shaped array on the exhaust pipe.
[0011] In a preferred embodiment of this utility model, the air inlet is elliptical in shape and the exhaust outlet is circular in shape.
[0012] In a preferred embodiment of this utility model, the number of intake pipes is 2-6, and the number of exhaust pipes is 2-6.
[0013] In a preferred embodiment of this utility model, the intake pipe and the exhaust pipe are connected by an airflow channel disposed inside the auxiliary heating device.
[0014] In a preferred embodiment of this utility model, the diameter of the air inlet is in the range of 1-5mm, and the diameter of the exhaust port is in the range of 2-6mm.
[0015] In a preferred embodiment of the present invention, a temperature control device disposed on the outer wall of the furnace tube is further included for adjusting the temperature of the auxiliary heating device.
[0016] In a preferred embodiment of this utility model, the furnace tube is made of quartz glass, and the auxiliary heating device is made of graphite.
[0017] In a preferred embodiment of this utility model, the inner walls of both the intake pipe and the exhaust pipe are provided with rectifier plates to prevent airflow disturbance.
[0018] This utility model solves the defects existing in the background technology, and has the following beneficial effects:
[0019] (1) The tubular PECVD equipment of this application forms a longitudinal airflow by setting an inlet pipe at the lower end and an exhaust pipe at the upper end of the auxiliary heating device. This longitudinal airflow setting allows the reaction gas to be evenly distributed in the inner cavity of the furnace tube. Compared with the traditional transverse airflow, it solves the problem of uneven film deposition caused by transverse airflow in the prior art, and is more conducive to the full contact between the reaction gas and the substrate surface, improving the deposition quality and performance stability of the film. It also reduces the film thickness difference caused by uneven airflow and improves the yield of the product.
[0020] (2) The air inlet pipe and the exhaust pipe of this application are evenly distributed around the auxiliary heating device. The air inlet pipe is provided with an air inlet in a fan-shaped array, and the exhaust pipe is provided with an exhaust outlet in a ring array. This arrangement not only optimizes the distribution and flow path of the airflow, but also extends the residence time of the reaction gas in the furnace tube, so that the gas can flow fully in the circular inner cavity of the furnace tube and the reaction is more complete. Compared with the prior art, this design significantly improves the utilization rate of the reaction gas, reduces the production cost, forms an orderly airflow path, reduces the local disturbance and non-uniformity of the airflow, and thus improves the uniformity and quality of the coating. Attached Figure Description
[0021] The present invention will be further described below with reference to the accompanying drawings and embodiments;
[0022] Figure 1 This is a perspective structural diagram of a preferred embodiment of the present invention;
[0023] Figure 2 This is a schematic diagram of the air intake pipe in this utility model;
[0024] Figure 3 This is a schematic diagram of the exhaust pipe structure in this utility model;
[0025] In the diagram: 1. Furnace tube; 2. Auxiliary heating device; 3. Exhaust pipe; 31. Exhaust port; 4. Inlet pipe; 41. Inlet; 5. Rectifier plate. Detailed Implementation
[0026] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. These drawings are simplified schematic diagrams, which are only used to illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention. Example
[0027] like Figures 1-3As shown, a novel inlet and outlet homogenization structure and coating equipment are disclosed, specifically a tubular PECVD furnace tube equipment. This includes a quartz glass furnace tube 1. A graphite auxiliary heating device 2 is connected to the center of the furnace tube 1 via fixing rods at both ends, secured with nuts. The auxiliary heating device 2 contains a quartz wafer boat for placing semiconductors, with the quartz wafer boat configuration referencing existing technology. The auxiliary heating device 2 provides stable heat support to the substrate, promoting the thin film deposition reaction. Airflow supply systems are located at the upper and lower ends of the auxiliary heating device 2, each consisting of an inlet pipe 4 and an outlet pipe 3. At the lower end of the auxiliary heating device 2, four inlet pipes 4 are evenly distributed, arranged in a ring around the auxiliary heating device 2. At the upper end, four outlet pipes 3 are symmetrically arranged, also in a ring layout. One side of the inlet pipe 4 extends out of the furnace tube 1 and connects to a conventional gas source device. Each inlet pipe... The furnace tube 1 is densely covered with elliptical air inlets 41 arranged in a fan-shaped array, while the exhaust pipe 3 has circular exhaust outlets 31 arranged in a ring. The diameter of the air inlets 41 is controlled within 1-5mm, and the diameter of the exhaust outlets 31 is controlled within 2-6mm to ensure the efficiency of air intake and the smoothness of air exhaust. The air inlets 41 are set towards the auxiliary heating device 2. The air intake pipe 4 and the exhaust pipe 3 are connected by an airflow channel set inside the auxiliary heating device 2, so that the airflow in the furnace tube 1 can form a vertical flow path from bottom to top, thereby optimizing the uniformity of airflow distribution and improving the uniformity and quality of coating. The fan-shaped arrangement of air inlets 41 allows most of the airflow entering the inner cavity of the furnace tube 1 to flow upward and escape into the circular inner cavity to fill the inner cavity. The ring array of exhaust outlets 31 ensures that the waste gas in the inner cavity can be absorbed by the exhaust pipe 3 in any direction, forming a more uniform airflow, thereby improving the uniformity of coating.
[0028] Furthermore, a manifold is connected to the side of the exhaust pipe 3 to integrate the gas discharged from multiple exhaust pipes 3. The manifold collects the gas collected from each exhaust pipe 3 and discharges it in a unified manner, which not only enhances the orderliness of exhaust but also avoids the accumulation of gas in local areas, further optimizing the airflow environment inside the furnace tube 1.
[0029] Furthermore, several rectifier plates 5 are fixed inside both the intake pipe 4 and the exhaust pipe 3. The rectifier plates 5 can be connected to the exhaust pipe 3 and the intake pipe 4 through traditional connection methods such as threaded connection and grooved connection. Several ventilation holes of increasing size are opened on the rectifier plates 5 from the edge to the center, and the ventilation holes are arranged along the axial direction of the intake pipe 4 and the exhaust pipe 3. The rectifier plates 5 are evenly spaced and arrayed in the inner cavity of the intake pipe 4 and the exhaust pipe 3. This arrangement can effectively reduce the disturbance and eddy current phenomenon of airflow in the pipe, ensure that the airflow enters and exits smoothly and evenly, thereby improving the utilization efficiency of airflow and enhancing the coating effect.
[0030] Furthermore, the outer wall of the furnace tube 1 is equipped with a temperature control device, which can precisely regulate the temperature of the auxiliary heating device 2. By adjusting the temperature, the activity and reaction rate of the reactive gases can be precisely controlled, creating ideal temperature conditions for thin film deposition, thereby improving the performance stability and deposition quality of the thin film.
[0031] Based on the above setup, when used for plasma deposition, the cleaned silicon wafer is placed on a quartz boat inside the auxiliary heating device 2. The equipment is started, and the gas inlet pipe 4 uniformly introduces reactive gases such as silane into the inner cavity of the furnace tube 1. Under the influence of the fan-shaped gas inlets 41, the gas flows upwards from the bottom of the inner cavity into the upper circular inner cavity, making full contact with the heated substrate to react and form a high-quality thin film. At this time, the exhaust pipe 3 can effectively and promptly discharge the waste gas after the reaction, maintaining stable pressure inside the furnace tube 1 and ensuring the smooth progress of the thin film deposition process.
[0032] Working principle: When this tubular PECVD equipment is running, the reaction gas is first delivered to the inlet pipe 4 through an external gas source device. The elliptical inlets 41 arranged in a fan-shaped array on the inlet pipe 4 spray the gas evenly. Since the exhaust pipe 3 is located above the auxiliary heating device 2, the gas forms a vertical airflow from bottom to top in the inner cavity of the furnace tube 1. Compared with the traditional transverse airflow, this vertical airflow can be more evenly distributed in the inner cavity of the furnace tube 1, ensuring that each substrate in the circular inner cavity of the furnace tube 1 can come into contact with the same concentration and activity of reaction gas, thereby effectively solving the problem of uneven coating caused by transverse airflow in the prior art.
[0033] Secondly, the circular exhaust ports 31 arranged in a ring on the exhaust pipe 3 can comprehensively introduce the waste gas after the reaction and discharge it from one side of the furnace tube 1. The orientation and arrangement of the exhaust ports 31 are coordinated with the air inlet 41, which further optimizes the airflow field in the furnace tube 1 and avoids the accumulation or short-circuiting of gas in local areas. The surrounding layout of the air inlet pipe 4 and the exhaust pipe 3, as well as the setting of the rectifier plate 5 in the air inlet pipe 4 and the exhaust pipe 3, make the airflow form an orderly flow path in the entire furnace tube 1, reduce turbulence, and thus accurately control the gas flow rate to improve the utilization rate of the reaction gas and enhance the coating effect.
[0034] The auxiliary heating device 2 provides stable heat to the substrate under the precise control of the temperature control device; the uniform distribution of heat helps to activate the reactive gas molecules, promotes their chemical reaction on the substrate surface, and generates a high-quality thin film; the quartz glass furnace tube 1 provides good high-temperature resistance and chemical stability for the entire reaction process, while facilitating real-time monitoring of the reaction in the inner cavity of the furnace tube 1.
[0035] In summary, this equipment optimizes the air intake and exhaust structure to form a longitudinal airflow, and with the precise temperature control of the auxiliary heating device 2, it achieves high-quality and uniform thin film deposition, effectively solving many problems caused by transverse airflow in existing technologies. It has broad application prospects in semiconductor manufacturing, coating and other fields.
[0036] Based on the preferred embodiments of this utility model described above, those skilled in the art can make various changes and modifications without departing from the technical concept of this utility model. The technical scope of this utility model is not limited to the contents of the specification, but must be determined according to the scope of the claims.
Claims
1. A novel intake and exhaust homogenization structure and coating equipment for plasma electroplating, characterized in that, include: Furnace tube (1), auxiliary heating device (2) installed in the inner cavity of the furnace tube (1), and airflow supply system installed at the upper and lower ends of the auxiliary heating device (2); The air supply system includes: a plurality of air inlet pipes (4) located at the lower end of the auxiliary heating device (2), and a plurality of exhaust pipes (3) located at the upper end of the auxiliary heating device (2). The air inlet pipe (4) has several air inlets (41) arranged on it, and the exhaust pipe (3) has several exhaust outlets (31) opened on it. The air inlets (41) are arranged facing the auxiliary heating device (2) so that the airflow direction of the inner cavity of the furnace tube (1) is from bottom to top.
2. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The intake pipe (4) is evenly distributed around the lower end of the auxiliary heating device (2), and the exhaust pipe (3) is evenly distributed around the upper end of the auxiliary heating device (2).
3. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The air inlets (41) are arranged in a fan-shaped array on the air intake pipe (4), and the exhaust ports (31) are arranged in a ring-shaped array on the exhaust pipe (3).
4. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The air inlet (41) is elliptical in shape, and the exhaust port (31) is circular in shape.
5. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The number of intake pipes (4) is 2-6, and the number of exhaust pipes (3) is 2-6.
6. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The intake pipe (4) and the exhaust pipe (3) are connected by an airflow channel located inside the auxiliary heating device (2).
7. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The diameter of the air inlet (41) is 1-5 mm, and the diameter of the exhaust port (31) is 2-6 mm.
8. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: It also includes a temperature control device installed on the outer wall of the furnace tube (1) for adjusting the temperature of the auxiliary heating device (2).
9. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The furnace tube (1) is made of quartz glass, and the auxiliary heating device (2) is made of graphite.
10. The novel intake and exhaust homogenization structure and coating equipment according to claim 1, characterized in that: The inner walls of the intake pipe (4) and the exhaust pipe (3) are provided with rectifier plates (5) to prevent airflow disturbance.