PECVD process gas mixing structure
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- ANHUI HUAYUAN EQUIP TECH CO LTD
- Filing Date
- 2025-07-22
- Publication Date
- 2026-07-21
AI Technical Summary
In the PECVD process, the connecting pipeline between the gas path cabinet and the reaction chamber leads to insufficient gas mixing, resulting in uneven film thickness and quality. Existing technologies need further optimization.
By installing a gas mixing structure one, a gas mixing structure two, or a gas mixing structure three inside the connecting pipe, including a grid plate, a baffle, or a small-diameter pipe, the gas molecules can be increased in flow distance and collision opportunities, resulting in more thorough gas mixing.
By designing a gas mixing structure, the gas mixes more evenly before reaching the reaction chamber, solving the problem of uneven film thickness and quality, and achieving a more stable PECVD process.
Smart Images

Figure CN224531022U_ABST