Microwave excited plasma thin film deposition apparatus

Abstract

The utility model discloses microwave excitation plasma thin film deposition device relates to plasma thin film deposition technical field, including the deposition shell, the upper end of deposition shell is connected with the sealing assembly, the inside fixed plasma of sealing assembly, the lower fixed end of deposition shell inside is quartz tube, the upper fixed end of quartz tube is water -cooling sample stage subassembly, the upper fixed end of water -cooling sample stage subassembly is insulating ceramic, the upper fixed end of insulating ceramic is molybdenum platform, the lower end of deposition shell is seted up opening, the inside fixed coaxial waveguide of opening, the lower end of coaxial waveguide is connected with mode converter, the middle of deposition shell lower end is seted up mounting hole, the inside fixed mounting pipe of mounting hole, can solve the plasma excitation efficiency shortage caused by microwave energy transmission loss, and the problem that substrate temperature control and electrical function are difficult to synchronous integration.

Description

Technical Field

[0001] This utility model relates to the field of plasma thin film deposition technology, specifically to a microwave-excited plasma thin film deposition apparatus. Background Technology

[0002] Plasma thin film deposition is a process that uses excited-state gas (plasma) to deposit materials on a substrate surface. This technology uses microwave energy to excite the reactive gas, generating a plasma containing active groups (such as ions and free radicals). These active groups undergo chemical reactions in a vacuum environment, ultimately forming a solid thin film on the substrate surface supported by a sample stage. Its core technologies lie in maintaining a stable plasma state, precisely controlling the vacuum environment of the reaction chamber, and regulating the substrate temperature.

[0003] Traditional devices have significant limitations in achieving the above core requirements: firstly, microwave energy is lost during transmission to the reaction region, resulting in insufficient plasma excitation efficiency and stability; secondly, it is difficult to simultaneously achieve high-precision temperature control of the substrate (especially during long-term deposition) and effective integration of electrical functions (such as bias voltage application). To address these issues, we propose a microwave-excited plasma thin film deposition device. Utility Model Content

[0004] The technical problem to be solved by this utility model is to overcome the existing defects and provide a microwave-excited plasma thin film deposition device, which can solve the problems of insufficient plasma excitation efficiency caused by microwave energy transmission loss and the difficulty in synchronously integrating substrate temperature control and electrical functions, and can effectively solve the problems in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a microwave-excited plasma thin film deposition apparatus, comprising a deposition shell, a sealing assembly connected to the upper end of the deposition shell, plasma fixed inside the sealing assembly, a quartz tube fixed to the lower end inside the deposition shell, a water-cooled sample stage assembly fixed to the upper end of the quartz tube, an insulating ceramic fixed to the upper end of the water-cooled sample stage assembly, a molybdenum stage fixed to the upper end of the insulating ceramic, an opening at the lower end of the deposition shell, a coaxial waveguide fixed inside the opening, a mode converter connected to the lower end of the coaxial waveguide, and a mounting hole in the middle of the lower end of the deposition shell. An installation tube is fixed inside the mounting hole. The upper end of the installation tube is attached to the lower end of the water-cooled sample stage assembly. A three-way adapter is connected to the lower end of the installation tube. A wire is installed inside the installation tube. The upper end of the wire passes through the water-cooled sample stage assembly and the insulating ceramic and connects to the molybdenum stage. The molybdenum stage is high-temperature resistant and is used to support the substrate and remain stable during the deposition process. The insulating ceramic provides insulation to prevent short circuits and ensure the electrical safety of the equipment. The quartz tube has good wave transmission, allowing microwaves to pass through to excite plasma. At the same time, it is chemically stable. The coaxial waveguide transmits microwave energy, efficiently transmitting microwaves from the microwave source to the reaction area. The mode converter changes the microwave transmission mode, allowing microwaves to better excite plasma in the cavity. The three-way adapter is used to connect different components or pipes to realize functions such as gas transmission and circuit connection.

[0006] Furthermore, the sealing assembly includes a sealing cover, a limiting ring, and a rubber ring. The upper end of the deposition shell is threadedly connected to the sealing cover. The limiting ring is fixed inside the sealing cover. The upper end of the deposition shell is fixed with a rubber ring. The lower end of the limiting ring has an annular groove. The rubber ring is engaged inside the annular groove. The plasma is fixed inside the sealing cover. The deposition shell is sealed by setting the sealing assembly.

[0007] Furthermore, the water-cooled sample stage assembly includes a water-cooled sample stage, a cooling chamber, a guide pipe, and a connecting flange ring. The water-cooled sample stage is fixed to the upper end of the quartz tube, and the lower end of the water-cooled sample stage is fitted with the upper end of the mounting pipe. A wire hole is opened in the middle of the water-cooled sample stage, and the wire is located inside the wire hole. A cooling chamber is opened inside the water-cooled sample stage. An inlet and an outlet are respectively opened at the rear end of the surface of the water-cooled sample stage. A guide pipe is fixed inside both the inlet and the outlet, and both guide pipes communicate with the cooling chamber. A connecting flange ring is fixed at the rear end of the circumferential surface of the guide pipe. The sample is cooled by setting up the water-cooled sample stage assembly.

[0008] Furthermore, a vacuum hole is provided at the upper end of the sealing cover, and a vacuum tube is fixed inside the vacuum hole. A shut-off valve is installed on the circumferential surface of the vacuum tube. The vacuum tube is connected to an external vacuum pump to evacuate the interior of the deposition shell.

[0009] Furthermore, a vacuum electrode is fixed to the lower end of the wire. The vacuum electrode is fixed in the port at the lower end of the tee adapter. By setting the vacuum electrode, an electrical connection in a vacuum environment is achieved, ensuring that the equipment works normally in a vacuum state.

[0010] Compared with the prior art, the beneficial effects of this utility model are as follows: This microwave-excited plasma thin film deposition apparatus has the following advantages: 1. By optimizing the microwave transmission path and mode conversion mechanism, efficient coupling of microwave energy to the reaction region is achieved, which greatly enhances the stability of plasma excitation and the concentration of active groups, thereby improving the film deposition rate and uniformity, and improving the film crystallization quality and adhesion.

[0011] 2. The innovative integration of water-cooled temperature control system and electrically isolated bias loading structure ensures long-term stable control of substrate temperature and reliable application of electric field in a vacuum environment, avoiding thin film defects caused by temperature fluctuations or circuit interference in traditional devices, and significantly expanding the dimensions of process control. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the front structure of this utility model; Figure 2 This is a front sectional view of the present invention; Figure 3 This is an enlarged view of section A of this utility model; Figure 4 This is a top sectional view of the present invention.

[0013] In the figure: 1 Deposition shell, 2 Sealing assembly, 21 Sealing cover, 22 Limiting ring, 23 Rubber ring, 3 Water-cooled sample stage assembly, 31 Water-cooled sample stage, 32 Cooling chamber, 33 Flow guide tube, 34 Connecting flange ring, 4 Insulating ceramic, 5 Molybdenum stage, 6 Mode converter, 7 Coaxial waveguide, 8 Mounting tube, 9 T-connector, 10 Wire, 11 Vacuum electrode, 12 Quartz tube, 13 Plasma, 14 Vacuum tube, 15 Shut-off valve. Detailed Implementation

[0014] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0015] Please see Figures 1-4This embodiment provides a technical solution: a microwave-excited plasma thin film deposition apparatus, including a deposition shell 1, a sealing assembly 2 connected to the upper end of the deposition shell 1, plasma 13 fixed inside the sealing assembly 2, a quartz tube 12 fixed to the lower end inside the deposition shell 1, a water-cooled sample stage assembly 3 fixed to the upper end of the quartz tube 12, an insulating ceramic 4 fixed to the upper end of the water-cooled sample stage assembly 3, a molybdenum stage 5 fixed to the upper end of the insulating ceramic 4, an opening at the lower end of the deposition shell 1, a coaxial waveguide 7 fixed inside the opening, a mode converter 6 connected to the lower end of the coaxial waveguide 7, and a mounting hole in the middle of the lower end of the deposition shell 1. There is an installation tube 8, the upper end of which is attached to the lower end of the water-cooled sample stage assembly 3. The lower end of the installation tube 8 is connected to a three-way adapter 9. A wire 10 is installed inside the installation tube 8. The upper end of the wire 10 passes through the water-cooled sample stage assembly 3 and the insulating ceramic 4 and connects to the molybdenum stage 5. The sealing assembly 2 includes a sealing cover 21, a limiting ring 22 and a rubber ring 23. The upper end of the deposition shell 1 is threadedly connected to the sealing cover 21. The limiting ring 22 is fixed inside the sealing cover 21. The upper end of the deposition shell 1 is fixed with a rubber ring 23. The lower end of the limiting ring 22 has an annular groove. The rubber ring 23 is engaged inside the annular groove. The plasma 13 is fixed to the sealing cover 2. Inside the quartz tube 12, the water-cooled sample stage assembly 3 includes a water-cooled sample stage 31, a cooling chamber 32, a guide pipe 33, and a connecting flange ring 34. The water-cooled sample stage 31 is fixed to the upper end of the quartz tube 12, and the lower end of the water-cooled sample stage 31 is attached to the upper end of the mounting pipe 8. A wire hole is opened in the middle of the water-cooled sample stage 31, and the wire 10 is located inside the wire hole. The cooling chamber 32 is opened inside the water-cooled sample stage 31. A water inlet and a water outlet are opened at the rear end of the surface of the water-cooled sample stage 31, and a guide pipe 33 is fixed inside both the water inlet and the water outlet. Both guide pipes 33 communicate with the cooling chamber 32. A connecting flange ring 34 is fixed at the rear end of the circumferential surface of the guide pipe 33. A vacuum hole is provided at the upper end of the flange ring 34 and the sealing cover 21. A vacuum tube 14 is fixed inside the vacuum hole. A shut-off valve 15 is installed on the circumferential surface of the vacuum tube 14. A vacuum electrode 11 is fixed at the lower end of the wire 10. The vacuum electrode 11 is fixed in the port at the lower end of the three-way adapter 9. The vacuum electrode 11 is used to achieve electrical connection in a vacuum environment to ensure that the equipment works normally in a vacuum state. The vacuum tube 14 is connected to an external vacuum pump to evacuate the inside of the deposition shell 1. The sample is cooled by the water-cooled sample stage assembly 3. The deposition shell 1 is sealed by the sealing assembly 2.

[0016] The working principle of the microwave-excited plasma thin film deposition apparatus provided by this utility model is as follows: First, an external vacuum pump is connected through the vacuum tube 14 and the shut-off valve 15 is opened to remove the gas inside the deposition shell 1, so that the sealed cavity formed by the deposition shell 1 and the sealing assembly maintains a vacuum environment; microwave energy is efficiently transmitted from the coaxial waveguide 7 to the mode converter 6 for mode optimization and then enters the cavity, penetrates the quartz tube 12 with wave transmission stability, excites the reactive gas to generate highly active plasma 13, and provides the active groups required for thin film deposition; circulating cooling water flows into the cooling cavity 32 of the water-cooled sample stage assembly 3 through the guide pipe 33 to precisely control the temperature of the water-cooled sample stage 31 and ensure the substrate temperature on the molybdenum stage 5 is stable; at the same time, the bias power supply is introduced through the vacuum electrode 11 connected by the three-way adapter 9 and through the mounting tube The wire 10 inside 8 passes through the water-cooled sample stage assembly 3 and the insulating ceramic 4 to achieve electrical isolation, and is finally loaded onto the molybdenum stage 5 to apply an electric field; the active groups in the plasma 13 diffuse in the vacuum cavity and undergo a chemical reaction on the substrate surface supported by the molybdenum stage 5 to form a solid film. The sealing cover 21 forms a compression seal with the rubber ring 23 at the upper end of the deposition shell 1 through the limiting ring 22 to ensure the vacuum degree. The quartz tube 12 simultaneously supports the water-cooled structure and maintains the microwave transmission path. The coaxial waveguide 7 and the mode converter 6 work together to optimize the microwave coupling efficiency. The microwave excitation path depends on the transmission characteristics of the coaxial waveguide 7, the mode converter 6 and the quartz tube 12. Temperature control and electrical control are integrated through the mounting tube 8: the cooling cavity 32 controls the sample stage temperature, the wire 10 is biased through the vacuum electrode 11, and the insulating ceramic 4 ensures electrical safety.

[0017] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the content of this utility model specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A microwave-excited plasma thin film deposition apparatus, characterized in that: The system includes a deposition shell (1), with a sealing assembly (2) connected to its upper end. A plasma (13) is fixed inside the sealing assembly (2). A quartz tube (12) is fixed to the lower end of the deposition shell (1). A water-cooled sample stage assembly (3) is fixed to the upper end of the quartz tube (12). An insulating ceramic (4) is fixed to the upper end of the water-cooled sample stage assembly (3). A molybdenum stage (5) is fixed to the upper end of the insulating ceramic (4). An opening is provided at the lower end of the deposition shell (1), and a coaxial structure is fixed inside the opening. Waveguide (7), the lower end of the coaxial waveguide (7) is connected to a mode converter (6), the middle of the lower end of the deposition shell (1) is provided with a mounting hole, the mounting hole is fixed with a mounting tube (8), the upper end of the mounting tube (8) is in contact with the lower end of the water-cooled sample stage assembly (3), the lower end of the mounting tube (8) is connected to a three-way adapter (9), the mounting tube (8) is provided with a wire (10), the upper end of the wire (10) passes through the water-cooled sample stage assembly (3) and the insulating ceramic (4) and is connected to the molybdenum stage (5).

2. The microwave-excited plasma thin film deposition apparatus according to claim 1, characterized in that: The sealing assembly (2) includes a sealing cover (21), a limiting ring (22) and a rubber ring (23). The upper end of the deposition shell (1) is threaded with the sealing cover (21). The limiting ring (22) is fixed inside the sealing cover (21). The upper end of the deposition shell (1) is fixed with a rubber ring (23). The lower end of the limiting ring (22) has an annular groove. The rubber ring (23) is engaged inside the annular groove. The plasma (13) is fixed inside the sealing cover (21).

3. The microwave-excited plasma thin film deposition apparatus according to claim 1, characterized in that: The water-cooled sample stage assembly (3) includes a water-cooled sample stage (31), a cooling chamber (32), a guide pipe (33), and a connecting flange ring (34). The water-cooled sample stage (31) is fixed to the upper end of the quartz tube (12). The lower end of the water-cooled sample stage (31) is in contact with the upper end of the mounting pipe (8). A wire hole is opened in the middle of the water-cooled sample stage (31). The wire (10) is located inside the wire hole. A cooling chamber (32) is opened inside the water-cooled sample stage (31). An inlet and an outlet are opened at the rear end of the surface of the water-cooled sample stage (31). A guide pipe (33) is fixed inside the inlet and outlet. Both guide pipes (33) are connected to the cooling chamber (32). A connecting flange ring (34) is fixed at the rear end of the circumferential surface of the guide pipe (33).

4. The microwave-excited plasma thin film deposition apparatus according to claim 2, characterized in that: The upper end of the sealing cover (21) is provided with a vacuum hole, and a vacuum tube (14) is fixed inside the vacuum hole. A shut-off valve (15) is installed on the circumferential surface of the vacuum tube (14).

5. The microwave-excited plasma thin film deposition apparatus according to claim 1, characterized in that: A vacuum electrode (11) is fixed at the lower end of the wire (10), and the vacuum electrode (11) is fixed in the port at the lower end of the three-way adapter (9).

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