Sample stage for a dual beam system

Abstract

The utility model relates to a sample bearing platform of double beam system relates to the technical field of semiconductor preparation, this sample bearing platform of double beam system has first bearing part and limit structure, first bearing part is used for bearing sample, and limit structure is used for limiting sample to first bearing part with first plane, and first bearing face has first included angle between first plane. Since sample is placed on first bearing face when processing, and the first included angle is complementary with ion beam bombardment angle, at this moment, the ion beam in double beam system can be made to be perpendicular to the sampling surface of sample without rotating bearing platform, after that, the side wall of limit structure and the bombardment direction of ion beam form second included angle, the second included angle is 0 degrees-90 degrees, makes the bombardment direction of ion beam and sampling surface not perpendicular, thereby makes ion beam unable to reach the bottom of groove in sampling surface directly, further avoids the curtain effect, improves the accuracy of detection result.

Description

Technical Field

[0001] This application relates to the field of semiconductor fabrication technology, and in particular to a sample stage for a dual-beam system. Background Technology

[0002] Dual-beam systems have a wide range of applications in fields such as chip inspection and materials analysis. With the help of dual-beam systems, precise cross-sectional observations can be performed on specific micro-regions of a sample, forming clear, high-resolution images.

[0003] During cross-sectional processing and testing using a dual-beam system, surface morphology variations or compositional differences can easily lead to inconsistent etching rates at different locations, resulting in vertical stripes on the cross-section, known as the "curtain effect." This curtain effect can mislead and interfere with the interpretation of test results, affecting their accuracy. Utility Model Content

[0004] Therefore, it is necessary to provide a sample stage for a dual-beam system to address the issue of how to improve the detection accuracy of the dual-beam system.

[0005] To achieve the above objectives, this utility model provides a sample support stage for a dual-beam system, comprising:

[0006] The first support portion has a first support surface and a first plane. The first support surface is used to support the sample. There is a first angle between the first support surface and the first plane. The angle between the bombardment direction of the ion beam and the bombardment direction of the electron beam is the ion beam bombardment angle. The first angle is complementary to the ion beam bombardment angle. The bombardment direction of the electron beam is a first direction. The first direction is perpendicular to the first plane.

[0007] A limiting structure is disposed on the first bearing surface, and the limiting structure is used to limit the sample; the sidewall of the limiting structure has a second included angle with the bombardment direction of the ion beam, the second included angle being 0 degrees to 90 degrees.

[0008] In one embodiment, the limiting structure includes a limiting groove located within the first bearing portion, and the sidewall of the limiting groove has a second included angle with the bombardment direction of the ion beam.

[0009] In one embodiment, the limiting structure further includes a limiting screw that extends from the sidewall of the first bearing portion into the limiting groove, and the limiting screw is used to fix the sample in the limiting groove.

[0010] In one embodiment, the limiting structure includes a first limiting portion and a second limiting portion located above the first bearing surface;

[0011] The first limiting part and the second limiting part are disposed opposite to each other to limit the sample.

[0012] In one embodiment, the limiting structure further includes a moving mechanism, wherein both the first limiting part and the second limiting part are connected to the moving mechanism, and the moving mechanism is used to move the first limiting part and the second limiting part.

[0013] In one embodiment, the second included angle ranges from 8 degrees to 20 degrees.

[0014] In one embodiment, the first included angle comprises 38 degrees.

[0015] In one embodiment, the sample stage of the dual-beam system further includes:

[0016] The second bearing portion has a second bearing surface, which is parallel to the first plane and connected to the first bearing surface.

[0017] In one embodiment, the sample stage of the dual-beam system further includes:

[0018] A support portion is located on the non-load-bearing surface of the first or second load-bearing portion and is used to support the first and second load-bearing portions.

[0019] In one embodiment, the maximum diameter of the sample stage of the dual-beam system is L, where 10mm ≤ L ≤ 32mm;

[0020] The maximum height range of the sample stage of the dual-beam system is H, where 13mm ≤ H ≤ 18mm.

[0021] Compared with existing technologies, the above technical solution has the following advantages:

[0022] The sample stage of this dual-beam system has a first support part and a limiting structure. The first support part is used to support the sample, and the limiting structure is used to limit the sample. The first support part has a first support surface and a first plane. There is a first angle between the first support surface and the first plane. The angle between the bombardment direction of the ion beam and the bombardment direction of the electron beam is the ion beam bombardment angle. The first angle and the ion beam bombardment angle are complementary. The bombardment direction of the electron beam is a first direction, which is perpendicular to the first plane. Since the sample is placed on the first support surface during processing, and the first angle is complementary to the ion beam bombardment angle, the ion beam in the dual-beam system can be made to hit the sampling surface of the sample perpendicularly without rotating the stage. Then, the sidewall of the limiting structure forms a second angle with the bombardment direction of the ion beam. This second angle is 0 degrees to 90 degrees, so that the bombardment direction of the ion beam is not perpendicular to the sampling surface. This prevents the ion beam from directly reaching the bottom of the groove in the sampling surface, thus avoiding the curtain effect and improving the accuracy of the detection results. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This application provides a schematic cross-sectional view of a sample support stage for a dual-beam system.

[0025] Figure 2 This application provides a three-dimensional structural schematic diagram of a sample support stage for a dual-beam system.

[0026] Figure 3 This application provides a schematic diagram of the cross-sectional structure of a sample.

[0027] Figure 4 This application provides a three-dimensional structural diagram of a sample support stage with a limiting groove, as an embodiment of the present application.

[0028] Figure 5 This application provides a three-dimensional structural diagram of a sample support stage with a limiting screw, as an embodiment of the present application.

[0029] Figure 6 This application provides a three-dimensional structural diagram of a sample support stage with a first limiting part and a second limiting part.

[0030] Figure 7 This application provides a three-dimensional structural diagram of a sample support stage with a moving mechanism as an embodiment of the present application;

[0031] Figure 8 This application provides a three-dimensional structural diagram of a sample support stage with a second bearing portion and a support portion.

[0032] Figure 9 This is a schematic cross-sectional view of a sample support stage for a dual-beam system, provided in an embodiment of this application.

[0033] Explanation of reference numerals in the attached drawings: 01-First support part; 011-First support surface; 012-First plane; 02-Sample; 021-Groove; 03-Limiting structure; 031-Limiting groove; 032-Limiting screw; 033-First limiting part; 034-Second limiting part; 035-Moving mechanism; 04-Second support part; 041-Second support surface; 05-Support part; β1-First included angle; β2-Second included angle; α1-Ion beam bombardment angle; B-Ion beam; E-Electron beam. Detailed Implementation

[0034] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0036] It should be understood that when a layer is referred to as "on," "adjacent to," or "connected to" other layers, it can be directly on, adjacent to, or connected to other layers, or there can be intervening layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," or "directly connected to" other layers, there are no intervening layers.

[0037] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0038] Based on the content in the background art, a dual-beam system has an electron beam and an ion beam, with an angle between the electron beam and the ion beam, so as to image and observe the etched surface of the sample while etching the sample with the ion beam.

[0039] In related technologies, the electron beam is perpendicular to the support surface of the stage. Therefore, to perform ion beam treatment on the sample on the stage, the stage needs to be rotated so that the ion beam hits the sample surface perpendicularly. Furthermore, because the extension direction of the grooves on the sampling surface is parallel to the direction of the ion beam, a curtain effect occurs in the grooves, affecting the accuracy of the detection results.

[0040] Based on this, this application provides a sample support stage for a dual-beam system, which has a first support portion and a limiting structure. The first support portion is used to support the sample, and the limiting structure is used to limit the sample. The first support portion has a first support surface and a first plane. A first angle is formed between the first support surface and the first plane. The angle between the bombardment direction of the ion beam and the bombardment direction of the electron beam is the ion beam bombardment angle. The first angle and the ion beam bombardment angle are complementary. The bombardment direction of the electron beam is a first direction, which is perpendicular to the first plane. Since the sample is placed on the first support surface during processing, and the first angle is complementary to the ion beam bombardment angle, the ion beam in the dual-beam system can be made to hit the sampling surface of the sample perpendicularly without rotating the support stage. Then, a second angle is formed between the sidewall of the limiting structure and the bombardment direction of the ion beam. This second angle is 0 degrees to 90 degrees, so that the bombardment direction of the ion beam is not perpendicular to the sampling surface. This prevents the ion beam from directly reaching the bottom of the groove in the sampling surface, thereby avoiding the curtain effect and improving the accuracy of the detection results.

[0041] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0042] refer to Figure 1 , Figure 1 This application provides a schematic cross-sectional view of the sample support stage of a dual-beam system according to an embodiment of the present application; see reference. Figure 2 , Figure 2 This application provides a three-dimensional structural schematic diagram of a sample support stage for a dual-beam system; see reference. Figure 3 , Figure 3 This application provides a schematic diagram of the cross-sectional structure of a sample; the sample support stage of the dual-beam system includes:

[0043] The first support part 01 has a first support surface 011 and a first plane 012. The first support surface 011 is used to support the sample 02. There is a first included angle β1 between the first support surface 011 and the first plane 012. The included angle between the bombardment direction of the ion beam B and the bombardment direction of the electron beam E is the ion beam bombardment angle α1. The first included angle β1 and the ion beam bombardment angle α1 are complementary. The bombardment direction of the electron beam E is the first direction Y. The first direction Y is perpendicular to the first plane 012.

[0044] The limiting structure 03 is disposed on the first bearing surface 011 and is used to limit the sample 02. The sidewall of the limiting structure 03 has a second included angle β2 with the bombardment direction of the ion beam B, which is 0 degrees to 90 degrees.

[0045] Specifically, the structure of the first support part 01 can be a platform-shaped structure with an inclined surface. The surface used to support the sample 02 is the first support surface 011, which is an inclined surface. The first plane 012 is a plane perpendicular to the bombardment direction of the electron beam E. The first support surface 011 and the first plane 012 are connected.

[0046] The angle α1 between the bombardment direction of the ion beam B and the bombardment direction of the electron beam E in the dual-beam system is preset by the detection device. The bombardment direction of the electron beam E is the first direction Y, which is perpendicular to the first plane 012. At this time, the angle between the bombardment direction of the ion beam B and the first direction Y is the ion beam bombardment angle α1.

[0047] The angle between the first bearing surface 011 and the first plane 012 is designed as a first included angle β1. This first included angle β1 is complementary to the ion beam bombardment angle α1, ensuring that the bombardment direction of the ion beam B is parallel to the first bearing surface 011. Therefore, when processing sample 02 using this bearing stage, since the direction of the ion beam B is parallel to the first bearing surface 011, there is no need to rotate the bearing stage, saving detection time and avoiding errors caused by rotation, thus improving detection accuracy.

[0048] Meanwhile, a limiting structure 03 is provided on the first bearing surface 011. A second included angle β2 is set between the side wall of the limiting structure 03 and the bombardment direction of the ion beam B. When the sample 02 is placed between the limiting structures 03, the sampling surface of the sample 02 will be rotated by β2, so that the ion beam B cannot directly reach the bottom of the groove 021 in the sampling surface. At this time, the extension direction x of the groove 021 has a second included angle β2 with the bombardment direction of the ion beam B, so that the extension direction x of the groove 021 is not parallel to the direction of the ion beam B.

[0049] In related technologies, when sample 02 is placed on the first bearing surface 011, since the extension direction x of the groove 021 in the sampling surface of sample 02 is parallel to the direction of ion beam B, the ion beam B will directly enter the groove 021 and penetrate to the bottom of the groove 021, thus producing a curtain effect. To avoid the curtain effect, this application provides a limiting structure 03 on one side of the first bearing surface 011. This limiting structure 03 rotates the sampling surface of sample 02 by a second included angle β2, so that the extension direction x of the groove 021 in the sampling surface of sample 02 produces a positional deviation from the bombardment direction of the ion beam B (e.g., ...). Figure 3 As shown in the diagram, this allows the ion beam B to hit the sidewall of groove 021, which is less prone to producing a curtain effect, thus avoiding the curtain effect. It should be noted that the second included angle β2 is the smallest angle between the sidewall of the limiting structure 03 and the bombardment direction of the ion beam B.

[0050] In this embodiment, the first support part 01 has a first support surface 011 and a first plane 012. The first support surface 011 and the first plane 012 have a first included angle β1. The angle between the bombardment direction of the ion beam B and the bombardment direction of the electron beam E is the ion beam bombardment angle α1. The first included angle β1 and the ion beam bombardment angle α1 are complementary. The bombardment direction of the electron beam E is a first direction Y, which is perpendicular to the first plane 012. Since sample 02 is placed on the first bearing surface 011 during processing, and the first included angle β1 is complementary to the ion beam bombardment angle α1, the ion beam B in the dual-beam system can be made to hit the sampling surface of sample 02 perpendicularly without rotating the bearing stage. Then, the side wall of the limiting structure 03 is set to form a second included angle β2 with the bombardment direction of the ion beam B. This second included angle β2 is 0 degrees to 90 degrees, excluding the endpoint value, so that the bombardment direction of the ion beam B is not perpendicular to the sampling surface. This prevents the ion beam B from directly reaching the bottom of the groove 021 in the sampling surface, thereby avoiding the curtain effect and improving the accuracy of the detection results.

[0051] In another embodiment of this application, reference is made to Figure 4 , Figure 4 This application provides a three-dimensional structural diagram of a sample support stage with a limiting groove in an embodiment; the limiting structure 03 includes a limiting groove 031, which is located inside the first support part 01, and the side wall of the limiting groove 031 has a second included angle β2 with the bombardment direction of the ion beam B.

[0052] Specifically, the limiting groove 031 is located in the first bearing part 01 on one side of the first bearing surface 011. When the sample 02 is placed in the limiting groove 031, the sample 02 can be fixed so that the extension direction x of the groove 021 in the sampling surface of the sample 02 has a second included angle β2 with the bombardment direction of the ion beam B. At this time, the bottom of the groove 021 of the sample 02 is not directly opposite to the bombardment direction of the ion beam B, thus avoiding the generation of the curtain effect.

[0053] It should be noted that there is a second included angle β2 between the sidewall of the limiting groove 031 and the bombardment direction of the ion beam B. This second included angle β2 is between 0 and 90 degrees, i.e., an acute angle. Therefore, the extension direction of the limiting groove 031 is not specifically limited, as long as the included angle between its sidewall and the bombardment direction of the ion beam B is acute. For example... Figure 2 or Figure 4 Two different forms.

[0054] In this embodiment, the limiting groove 031 can restrict the position of the sample 02, thereby avoiding the curtain effect.

[0055] In another embodiment of this application, reference is made to Figure 5 , Figure 5 This application provides a three-dimensional structural diagram of a sample support stage with a limiting screw. The limiting structure 03 also includes a limiting screw 032, which extends from the side wall of the first support part 01 into the limiting groove 031. The limiting screw 032 is used to fix the sample 02 in the limiting groove 031.

[0056] Specifically, the limiting structure 03 is also provided with a limiting screw 032. Since the first bearing surface 011 is an inclined surface, the sample 02 may move during etching, resulting in errors. In this embodiment, the limiting screw 032 is provided to avoid errors caused by the movement of the sample 02. The screw 032 can extend from the side wall of the first bearing part 01 into the limiting groove to fix the sample 02.

[0057] In another embodiment of this application, reference is made to Figure 6 , Figure 6 This application provides a three-dimensional structural diagram of a sample support stage with a first limiting part and a second limiting part; the limiting structure 03 includes a first limiting part 033 and a second limiting part 034 located on the upper side of the first support surface 011;

[0058] The first limiting part 033 and the second limiting part 034 are arranged opposite to each other to limit the sample 02.

[0059] Specifically, the first limiting part 033 and the second limiting part 034 are arranged opposite to each other to form a limiting space. The sample 02 is placed between the limiting spaces. The first limiting part 033 and the second limiting part 034 can be designed separately on the outside, making assembly simpler. It should be noted that the first limiting part 033 and the second limiting part 034 can be arranged as follows: Figure 6 The locations shown are on the left and right sides of sample 02, or they can be located on the top and bottom sides of sample 02. There are no specific limitations, and the design can be customized as needed.

[0060] In another embodiment of this application, reference is made to Figure 7 , Figure 7 This application provides a three-dimensional structural diagram of a sample support stage with a moving mechanism. The limiting structure 03 also includes a moving mechanism 035. The first limiting part 033 and the second limiting part 034 are both connected to the moving mechanism 035. The moving mechanism 035 is used to move the first limiting part 033 and the second limiting part 034.

[0061] Specifically, the limiting structure 03 also includes a moving mechanism 035. It should be noted that this moving mechanism 035 can be disposed inside the first bearing portion 01, or it can be disposed separately on the first bearing surface 011 and then fixed with a fastener; there is no specific limitation. The first limiting portion 033 and the second limiting portion 034 can also each be provided with a moving mechanism 035 to facilitate movement. In this embodiment, the moving mechanism 035 is provided to facilitate the placement and removal of the sample 02.

[0062] In another embodiment of this application, the angle range of the second included angle β2 is 8 degrees to 20 degrees.

[0063] Specifically, the second included angle β2 is 0 degrees to 90 degrees, excluding the endpoint values. It is preferable that the angle range is between 8 degrees and 20 degrees, including the endpoint values. For example, the angle of the second included angle β2 can be 8 degrees, or the angle of the second included angle β2 can be 12 degrees, or the angle of the second included angle β2 can be 18 degrees, or the angle of the second included angle β2 can be 19 degrees, etc., without making specific limitations.

[0064] It should be noted that, as Figure 3 As shown, when the height of the groove 021 on the sampling surface of sample 02 is a and the width is b, sinβ2×a+cosβ2×b=10 micrometers can be designed. That is to say, the higher the height a of the groove 021 and the smaller the width b, the smaller the second included angle β2 can be designed.

[0065] In another embodiment of this application, the first included angle β1 includes 38 degrees.

[0066] Specifically, the first included angle β1 can be set to 38 degrees so that the detection device in the dual-beam system has an included angle of 52 degrees between the ion beam B and the electron beam E.

[0067] In another embodiment of this application, reference is made to Figure 8 , Figure 8 This application provides a three-dimensional structural diagram of a sample support stage with a second support portion and a supporting portion; the sample support stage of the dual-beam system further includes:

[0068] The second bearing portion 04 has a second bearing surface 041, which is parallel to the first plane 012 and connected to the first bearing surface 011.

[0069] Specifically, the second support part 04 includes a second support surface 041, which is parallel to the first plane 012 and connected to the first support surface 011 to form a platform, at which time the sample 02 can be placed on the second support surface 041.

[0070] The second support part 04 and the first support part 01 can be integrally formed. They are described separately only for better explanation. It should be noted that when the bombardment direction of the electron beam E needs to be perpendicular to the surface of the sample 02, the sample 02 can also be placed on the second support part 04, which improves the flexibility of detection.

[0071] It should be noted that both the first support portion 01 and the second support portion 04 can be made of Al material. Al material has the characteristics of smooth surface, easy processing, and good conductivity, and does not affect the rapid sample changing function of the dual-beam system. In some embodiments, the first support portion 01 and the second support portion 04 can be obtained by cutting Al material into cylinders.

[0072] In another embodiment of this application, the sample stage of the dual-beam system further includes:

[0073] The support part 05 is located on the non-load-bearing surface of the first load-bearing part 01 or the second load-bearing part 04, and is used to support the first load-bearing part 01 and the second load-bearing part 04.

[0074] Specifically, the support part 05 can be set on the non-load-bearing surface of the first support part 01 or the second support part 04, for example, it can be set on the bottom surface of the first support part 01 or the bottom surface of the second support part 04, without any specific limitation.

[0075] The support part 05 can support the first support part 01 and the second support part 04 to facilitate testing.

[0076] It should be noted that the material of the support part 05 can also be Al material, and there is no specific limitation.

[0077] In another embodiment of this application, reference is made to Figure 9 , Figure 9 This application provides a cross-sectional structural diagram of a sample support stage for a dual-beam system; the maximum diameter range of the sample support stage for the dual-beam system is L, 10mm≤L≤32mm;

[0078] The maximum height range of the sample stage for the dual-beam system is H, where 13mm ≤ H ≤ 18mm.

[0079] Specifically, the maximum diameter range of the sample carrier stage of the dual-beam system is L, 10mm≤L≤32mm. For example, the maximum diameter L of the carrier stage can be 10mm, or 18mm, or 21mm, or 32mm, etc., and can be set as needed.

[0080] The maximum height range of the sample stage in the dual-beam system is H, 13mm≤H≤18mm. For example, the maximum height H of the stage can be 13mm, or 14mm, or 16mm, or 18mm, etc., and can be set as needed.

[0081] In some embodiments, when the height H of the support platform is set to 16mm, the diameter L of the support platform can be set to 18mm, and the diameter of the support part 05 can be set to 3.2mm, etc., without specific limitations.

[0082] In the description of this specification, references to terms such as "some embodiments," "another embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0083] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0084] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A sample support stage for a dual-beam system, characterized in that, include: The first support portion has a first support surface and a first plane. The first support surface is used to support the sample. There is a first angle between the first support surface and the first plane. The angle between the bombardment direction of the ion beam and the bombardment direction of the electron beam is the ion beam bombardment angle. The first angle is complementary to the ion beam bombardment angle. The bombardment direction of the electron beam is a first direction. The first direction is perpendicular to the first plane. A limiting structure is disposed on the first bearing surface, and the limiting structure is used to limit the sample; the sidewall of the limiting structure has a second included angle with the bombardment direction of the ion beam, the second included angle being 0 degrees to 90 degrees.

2. The sample stage of the dual-beam system according to claim 1, characterized in that, The limiting structure includes a limiting groove located within the first bearing portion, and the sidewall of the limiting groove has a second included angle with the bombardment direction of the ion beam.

3. The sample stage of the dual-beam system according to claim 2, characterized in that, The limiting structure also includes a limiting screw, which extends from the side wall of the first bearing portion into the limiting groove, and the limiting screw is used to fix the sample in the limiting groove.

4. The sample stage of the dual-beam system according to claim 1, characterized in that, The limiting structure includes a first limiting part and a second limiting part located on the upper side of the first bearing surface; The first limiting part and the second limiting part are disposed opposite to each other to limit the sample.

5. The sample stage of the dual-beam system according to claim 4, characterized in that, The limiting structure further includes a moving mechanism, and both the first limiting part and the second limiting part are connected to the moving mechanism. The moving mechanism is used to move the first limiting part and the second limiting part.

6. The sample stage of the dual-beam system according to claim 1, characterized in that, The second included angle ranges from 8 degrees to 20 degrees.

7. The sample stage of the dual-beam system according to claim 1, characterized in that, The first included angle is 38 degrees.

8. The sample stage of the dual-beam system according to claim 1, characterized in that, The sample stage of the dual-beam system also includes: The second bearing portion has a second bearing surface, which is parallel to the first plane and connected to the first bearing surface.

9. The sample stage of the dual-beam system according to claim 8, characterized in that, The sample stage of the dual-beam system also includes: A support portion is located on the non-load-bearing surface of the first or second load-bearing portion and is used to support the first and second load-bearing portions.

10. The sample stage of the dual-beam system according to claim 1, characterized in that, The maximum diameter range of the sample stage of the dual-beam system is L, 10mm≤L≤32mm; The maximum height range of the sample stage of the dual-beam system is H, where 13mm ≤ H ≤ 18mm.

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