A laser, a laser chip and a heat sink

Abstract

The utility model provides a kind of laser, laser chip and heat sink, and the laser includes: heat sink;Laser chip, including the high reflection film of the back cavity surface of the laser chip and the high reflection film that overflow the back cavity surface, the laser chip is set to the heat sink by connecting structure;Accommodate groove, the accommodate groove is set to the heat sink, at least part of the connecting structure is accommodated in the accommodate groove, so that the connecting structure and the laser chip between definition accommodate space, to accommodate the high reflection film that overflow the back cavity surface.The utility model's laser solves the technical problem that the phenomenon of fracture of laser chip occurs due to the non-horizontal packaging of laser chip when packaging.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor chip technology, specifically to a laser, a laser chip, and a heat sink. Background Technology

[0002] The laser chip forms the necessary resonant cavity structure of the laser by depositing an antireflection film in the front cavity and a high-reflection film on the back cavity surface in the back cavity. This allows photons to oscillate repeatedly within the laser chip cavity, enhancing their intensity until they exceed the threshold critical point before emitting laser light.

[0003] After cleaving and coating, the laser chip assembly needs to be soldered to the heat sink. In the actual packaging process, the second cleaved region of the laser chip assembly is coated with an anti-reflection film, and the first cleaved region is coated with a high-reflectivity film on the back cavity surface. The films in the first and second cleaved regions serve different purposes and have different thicknesses; typically, the thickness of the first cleaved region is much greater than that of the second. Because the first cleaved region has a thicker high-reflectivity film on the back cavity surface, it is more prone to film flipping during the process. Simultaneously, the back cavity is tightly attached to the heat sink and cannot be suspended, causing the metal layer on the laser chip to cover the flipped film. This film flipping on the metal layer leads to chip unevenness. Therefore, abnormal film flipping, under the pressure of packaging, may cause the chip to have open solder joints and break, increasing the defect rate. Utility Model Content

[0004] The purpose of this invention is to overcome the above-mentioned technical deficiencies and provide a laser, a laser chip, and a heat sink to solve the technical problem in the related art where the laser chip breaks due to non-horizontal packaging during the laser chip packaging process.

[0005] To achieve the above-mentioned technical objectives, the present invention adopts the following technical solution:

[0006] One aspect of this application provides a laser, comprising:

[0007] Heat sink;

[0008] A laser chip includes a high-reflectivity film disposed on the rear cavity surface of the laser chip and a high-reflectivity film overflowing from the rear cavity surface, wherein the laser chip is disposed on the heat sink via a connection structure;

[0009] A receiving groove is disposed on the heat sink, the receiving groove accommodating at least a portion of the connecting structure, such that a receiving space is defined between the connecting structure and the laser chip to accommodate the high-reflectivity film that overflows from the rear cavity surface.

[0010] Furthermore, the laser chip includes an adjacent first cleavage region and a main chip region; the high-reflectivity film overflowing from the rear cavity surface includes a first flip film overflowing from the first cleavage region and a second flip film overflowing from the metal layer in the main chip region; at least the metal layer and the connection structure define a receiving space to receive the second flip film.

[0011] Furthermore, along the fast axis direction of the laser chip, at least the projection of the second flip film is located within the receiving groove.

[0012] Furthermore, the volume of the receiving groove is not less than the volume of the second flipping film.

[0013] Furthermore, along the light emission direction of the laser chip, the length W of the receiving groove is not less than the length of the second flip film; along the slow axis direction of the laser chip, the width L of the receiving groove is not less than the width of the laser chip; along the fast axis direction of the laser, the depth H of the receiving groove is not greater than the sum of the lengths of the second flip film and the second connecting structure; wherein, the second connecting structure is a connecting structure located in the receiving groove.

[0014] Furthermore, along the fast axis direction of the laser chip, the sum of the lengths of the second flip film and the second connecting structure is the first length; along the fast axis direction of the laser chip, the difference between the first length and the depth H of the receiving groove is equal to the length of the first connecting structure; wherein, the first connecting structure is a connecting structure connected to the metal layer.

[0015] Furthermore, the difference between the length W of the receiving groove and the length of the second flip film is 0μm-3μm; the difference between the width L of the receiving groove and the width of the laser chip is 0μm-50μm.

[0016] Furthermore, along the fast axis direction of the laser chip, at least a portion of the projection of the first flip film is located within the receiving groove, and along the light emission direction of the laser chip, the overlap length between the first flip film and the receiving groove is 0-3 μm.

[0017] Furthermore, the laser chip, used to manufacture the laser as described above, further includes a first cleaving region and a second cleaving region; the second cleaving region is located on the side of the main chip region away from the first cleaving region; the second cleaving region is provided with an anti-reflection film for light transmission; along the light emission direction of the laser, the length of the first cleaving region is greater than the length of the second cleaving region; the laser chip includes a bar and a single tube.

[0018] In another aspect, this application also provides a heat sink for manufacturing the laser as described above, wherein a laser chip is disposed on the heat sink and a receiving groove is formed on the heat sink for receiving the flip film overflowing from the rear cavity surface of the laser chip.

[0019] The laser, laser chip, and heat sink proposed in this application have the following beneficial effects:

[0020] The laser proposed in this utility model has a receiving groove adapted to the high reflectivity film on the cavity surface after overflow on the heat sink. The receiving groove accommodates the connection structure located between the metal layer and the heat sink, so that the connection structure that should be located on the top surface of the heat sink is located in the receiving groove, thereby defining a receiving space to accommodate the high reflectivity film on the cavity surface after overflow. This ensures that the laser chip can be horizontally fixed on the top surface of the heat sink, reduces the warpage and open solder joints of the laser chip, and reduces the packaging stress.

[0021] Furthermore, this application adapts the size of the receiving groove to the size of the second flip film, ensuring efficient heat conduction while ensuring the horizontal packaging of the laser chip;

[0022] The laser structure of this invention is compact, and the size of the receiving groove is adapted to the cleavage area of ​​the laser chip, taking into account both process feasibility and packaging reliability. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of the laser of this utility model;

[0024] Figure 2 This is a side view of the laser of this utility model;

[0025] Figure 3 for Figure 2 A cross-sectional view along the AA direction;

[0026] Figure 4 This is a front view of the laser of this utility model;

[0027] Figure 5 for Figure 4 A cross-sectional view along the BB direction in the middle;

[0028] Figure 6 for Figure 5 A magnified view of part I in the middle;

[0029] Figure 7 This is a top view of the laser of this utility model;

[0030] Figure 8 This is a schematic diagram of the heat sink structure of this utility model;

[0031] Figure 9 This is a schematic diagram of the receiving groove of this utility model.

[0032] The above figures include the following reference numerals:

[0033] 10. Laser chip; 1. Main chip area; 12. Metal layer; 2. First cleavage region; 21. High reflectivity film disposed on the back cavity surface of the laser chip; 22. High reflectivity film overflowing from the back cavity surface; 221. First flip film; 222. Second flip film; 4. Second cleavage region; 41. Antireflection film; 201. First sidewall; 202. Second sidewall; 203. Third sidewall; 204. Fourth sidewall;

[0034] 20. Heat sink; 3. Receiving tank; 31. First tank; 32. Second tank; 33. Transition tank; 5. Connecting structure; 51. First connecting structure; 52. Second connecting structure; 6. Heat dissipation surface. Detailed Implementation

[0035] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present application.

[0036] See Figure 1 , Figure 5 Laser chips typically consist of a resonant cavity structure formed by an antireflection coating 41 on the front cavity surface and a high-reflectivity coating on the rear cavity surface. Photons are amplified through repeated oscillations before emitting laser light. During the packaging process, the laser chip is soldered to the heat sink 20. However, due to the relatively large thickness of the high-reflectivity coating on the rear cavity surface, a film-flipping phenomenon is prone to occur during the coating process on the rear cavity surface of the laser chip. Film flipping results in the metal layer 12 being covered. However, since the first cleavage region 2 of the laser chip 10 is directly attached to the heat sink 20 and cannot be suspended, the high-reflectivity coating overflowing from the first cleavage region 2 and the high-reflectivity coating overflowing from the chip body area causes unevenness on the chip surface, which in turn prevents the laser chip 10 from being horizontally mounted on the heat sink 20. Under packaging stress, this unevenness may cause problems such as open solder joints and chip breakage, significantly reducing yield.

[0037] See Figures 1 to 9 The laser includes a heat sink 20; a laser chip 10, including a high-reflectivity film 21 disposed on the rear cavity surface of the laser chip and a high-reflectivity film 22 overflowing from the rear cavity surface, the laser chip 10 being disposed on the heat sink 20 via a connecting structure 5; and a receiving groove 3 disposed on the heat sink 20, the receiving groove 3 accommodating at least a portion of the connecting structure 5, such that a receiving space is defined between the connecting structure 5 and the laser chip 10 to accommodate the high-reflectivity film 22 overflowing from the rear cavity surface.

[0038] In practical applications, the laser yield is optimal when the distance between the metal layer of the laser chip 10 and the heat sink 20 is equidistant. The high-reflectivity film 21 disposed on the back cavity surface of the laser chip is a light-reflective film layer disposed on the back cavity surface of the laser chip. However, during the coating process to form the high-reflectivity film on the back cavity surface, the film layer may overflow from the back cavity surface, thus forming the high-reflectivity film 22 overflowing from the back cavity surface in this embodiment. When the laser chip 10 is packaged onto the heat sink 20, the high-reflectivity film 22 overflowing from the back cavity surface covering the metal layer 12 can cause the distance between the laser chip 10 and the heat sink 20 to be inconsistent, which may cause the laser chip 10 to warp, thereby affecting the flatness of the package.

[0039] By adopting the above configuration, the design of the receiving groove 3 optimizes the solder distribution by providing a receiving space for the connection structure 5 connecting the heat sink 20 and the metal layer 12, thereby providing a space buffer for the high reflectivity film 22 that overflows from the rear cavity surface, reducing the impact of the high reflectivity film 22 that overflows from the rear cavity surface on the flatness of the laser chip 10 packaging when packaging the laser chip 10 and the heat sink 20.

[0040] The laser used in this embodiment can both ensure heat dissipation requirements and reduce the possibility of abnormal welding of laser chip 10 caused by film flipping.

[0041] See Figure 6 In the laser of this embodiment, the laser chip 10 includes an adjacent first cleavage region 2 and a main chip region 1; the high-reflectivity film 22 on the overflow cavity surface includes a first flip film 221 overflowing from the first cleavage region 2 and a second flip film 222 overflowing from the metal layer 12 of the main chip region 1; at least the metal layer 12 and the connection structure 5 define a receiving space to accommodate the second flip film 222. It should be understood that this application does not limit the sealing of the receiving space, but only needs to ensure that the receiving space can at least accommodate the second flip film 222. In practical applications, when the second flip film 222 is only located on the side of the metal layer 12 close to the heat sink 20, the receiving space can be sealed.

[0042] Specifically, metal layer 12 is disposed at the top and bottom of the chip body region. Metal layer 12 has a certain thickness. After overflowing, the high-reflectivity film 22 on the cavity surface will cover metal layer 12. The high-reflectivity film covering metal layer 12 will form a protrusion on metal layer 12. Along the direction perpendicular to the heat dissipation surface 6, at least a portion of the projection of metal layer 12 is located in receiving groove 3, forming a space between metal layer 12 and receiving groove 3 to accommodate the high-reflectivity film 22 on the cavity surface after overflowing on metal layer 12, thereby ensuring the flatness of the package. It should be understood that the top and bottom of the chip body region described in this application refer to the upper and lower sides of the chip body region defined along the fast axis direction of the laser chip.

[0043] See Figure 6 In the laser of this embodiment, at least the projection of the second flip film 222 is located within the receiving groove 3 along the fast axis direction of the laser chip 10.

[0044] With the above configuration, since the high-reflectivity film 22 on the cavity surface after overflowing from the metal layer 12 is thicker, sufficient accommodating space can be formed between the metal layer 12 and the accommodating groove 3. When the laser chip 10 is connected to the heat sink via the connecting structure, the connecting structure, which should originally be in contact with the metal layer 12, is located inside the accommodating groove 3, so that an accommodating space is formed between the connecting structure and the metal layer 12 to accommodate the high-reflectivity film overflowing from the metal layer 12. When the laser chip 10 is packaged in the heat sink, any part of the bottom of the laser chip 10 should be equidistant from the heat sink 20, and the gap should be 0. However, because the high-reflectivity film overflows from the metal layer 12, when the second flip film 222 is in complete contact with the heat sink, there will be a gap between the laser chip 10 and the heat sink 20, which will affect the packaging accuracy of the laser.

[0045] See Figure 6 In the laser of this embodiment, when the volume of the receiving groove 3 is greater than the volume of the second flip film 222, the receiving groove 3 includes a first groove 31 and a second groove 32; along the fast axis direction of the laser chip 10, at least a portion of the projection of the first flip film 221 is located in the first groove 31, and the projection of the second flip film 222 is located in the second groove 32.

[0046] See Figure 6 In the laser of this embodiment, the volume of the second groove 32 is not less than the volume of the second flip film 222; the portion of the first flip film 221 extending beyond the metal layer 12 is the target flip film, and the volume of the first groove 31 is not less than the volume of the target flip film. Specifically, the reason why the volume of the first groove 31 is not less than the volume of the target flip film is that the target of the first groove 31 is the portion of the bottom surface of the first flip film 221 that extends beyond the bottom surface of the metal layer 12.

[0047] Specifically, a second tank 32 is provided to create sufficient space between the metal layer 12 and the second tank 32. At the same time, a first tank 31 is provided so that when the high-reflectivity film 22 overflows from the cavity surface and is long, the high-reflectivity film 22 overflows from the cavity surface and enters the first tank 31, thereby preventing the high-reflectivity film 22 overflowing from the cavity surface from directly contacting the heat sink 20 and affecting the overall flatness.

[0048] In this embodiment, along the light emission direction of the laser, the length W of the receiving groove 3 is not less than the length of the second flip film 222; along the slow axis direction of the laser, the width L of the receiving groove 3 is not less than the width of the laser chip 10; and along the fast axis direction of the laser, the depth H of the receiving groove 3 is not less than the length of the second flip film 222.

[0049] With the above configuration, along the slow axis direction of the laser, the width L of the receiving groove 3 is not less than the width of the laser chip 10, thereby forming two transition grooves 33 in the receiving groove 3; the two transition grooves 33 are respectively located on opposite sides of the laser chip 10. This allows the receiving groove 3 to accommodate solder located on both sides of the laser chip 10.

[0050] The condition that the depth H of the receiving groove 3 along the fast axis direction of the laser is not greater than the sum of the lengths of the second flip film 222 and the second connecting structure 52 includes: along the fast axis direction of the laser, the sum of the lengths of the second flip film 222 and the second connecting structure 52 is a first length; along the fast axis direction of the laser, the difference between the first length and the depth H of the receiving groove 3 is equal to the length of the first connecting structure 51; wherein, the first connecting structure 51 is a connecting structure 5 connected to the metal layer 12.

[0051] Specifically, the connecting structure 5 is divided into a first connecting structure 51 that adheres to the metal layer 12 and a second connecting structure 52 that fills the gap between the receiving groove 3 and the high-reflectivity film 22 on the overflow cavity surface. The second connecting structure 52 fills the gap in the receiving groove 3, and when the connecting structure 5 is solder, it eliminates the solder obstruction caused by the high-reflectivity film 22 on the overflow cavity surface; the layered solder design takes into account both welding strength and heat dissipation requirements. Preferably, the thickness of the second connecting structure 52 is greater than the thickness of the first connecting structure 51.

[0052] Specifically, in a preferred embodiment, along the light emission direction of the laser, the length W of the receiving groove 3 is equal to the length of the second flip film 222; along the slow axis direction of the laser, the length L of the receiving groove 3 is equal to the length of the laser chip 10, so that the receiving groove 3 can just accommodate the second flip film 222, thereby ensuring the size of the heat dissipation structure on the heat sink 20 and ensuring heat dissipation efficiency.

[0053] Along the light emission direction of the laser, the length W of the receiving groove 3 is equal to the length of the second flip film 222, thereby ensuring that all the connection structures 5 supported by the metal layer 12 can be accommodated in the receiving groove 3.

[0054] Along the fast axis of the laser, the depth H of the receiving groove 3 is less than the sum of the lengths of the second flip film 222 and the second connecting structure 52, thereby ensuring that the connecting structure 5 inside the receiving groove 3 does not contact the bottom of the receiving groove 3, thus ensuring that the connecting structure does not affect the flatness of the packaging.

[0055] In the laser of this embodiment, the laser chip 10 further includes a second cleaving region 4; the second cleaving region 4 is located on the side of the main chip region 1 away from the first cleaving region 2; an anti-reflection film 41 for light transmission is provided on the second cleaving region 4; along the light emission direction of the laser, the length of the first cleaving region 2 is greater than the length of the second cleaving region 4.

[0056] In the laser of this embodiment, the connecting structure 5 is a welding material, which may have heat-fusible properties.

[0057] In the laser of this embodiment, the receiving groove 3 has a cuboid structure. It should be understood that the structural limitation of the receiving groove 3 in this application is only for illustrative purposes. In actual application scenarios, the shape of the receiving space formed after the second connecting structure 52 is provided in the receiving groove 3 can be adapted to the shape of the second flipping membrane 222. When the shape of the receiving space formed after the second connecting structure 52 is provided in the receiving groove 3 is not exactly the same as the shape of the second flipping membrane 222, the receiving volume of the receiving space can be larger than the volume of the second flipping membrane 222.

[0058] In the laser of this embodiment, the heat dissipation surface 6 of the heat sink 20 is arranged around the receiving groove 3.

[0059] In some embodiments, the heat sink 20 includes a heat dissipation surface 6 that fits against the connection structure 5, and the receiving groove 3 is recessed into the heat dissipation surface 6.

[0060] With the above configuration, the surrounding heat dissipation surface 6 can maximize the contact area between the heat sink 20 and the laser chip 10, thereby improving heat dissipation efficiency; the cuboid groove structure avoids stress concentration and improves the service life of the heat sink 20. Preferably, in this embodiment, the heat dissipation surface 6 is arranged around the perimeter of the receiving groove 3.

[0061] In the laser of this embodiment, the heat sink 20 is provided with a first sidewall 201, a second sidewall 202, a third sidewall 203, and a fourth sidewall 204; the first sidewall 201, the second sidewall 202, the third sidewall 203, and the fourth sidewall 204 are connected in sequence to form the receiving groove 3; the first sidewall 201 and the third sidewall 203 are arranged opposite to each other; the second sidewall 202 and the fourth sidewall 204 are arranged opposite to each other.

[0062] With the above configuration, a regularly shaped receiving groove 3 is provided on the heat sink 20, which makes it easy to position the laser chip 10 when it is packaged on the heat sink 20, so that the second flip film 222 of the metal layer 12 overflowing from the laser chip can be accurately placed into the receiving groove 3.

[0063] In another embodiment of this application, a laser chip is also provided. The laser chip 10 further includes a second cleaving region 4. The second cleaving region 4 is adjacent to the main chip region 1 and is located on the side of the main chip region 1 away from the first cleaving region 2. An antireflective film 41 for light transmission is disposed on the second cleaving region 4. Along the light emission direction of the laser, the length of the first cleaving region 2 is greater than the length of the second cleaving region 4. The laser chip includes a bar and a single tube. This laser chip includes, but is not limited to, applications in lasers as described in this application.

[0064] Without changing the overall size of the laser chip 10, appropriately reducing the length of the second cleavage region 4 and increasing the length of the first cleavage region 2 can prevent excessive high-reflectivity film from overflowing onto the metal layer 12, thereby reducing the size of the receiving groove 3 opened in the heat sink 20 and reducing the impact on the heat dissipation capacity of the heat sink 20.

[0065] The laser-compatible solder filling of this invention, through the design of the first groove 31 and the second groove 32, avoids the film flipping from blocking the solder flow and improves the welding yield. Example

[0066] See Figure 6 In the laser of this embodiment, the length of the first groove 31 along the light emission direction of the laser chip is 3µm.

[0067] Specifically, the length of the first groove 31 is 3µm to avoid excessive heat dissipation area loss due to an overly large groove. The 3µm length provides sufficient space for film flipping, ensuring that the film layer is not squeezed or deformed. Example

[0068] See Figure 9 The length of the receiving groove 3 is 8 μm; the depth of the receiving groove 3 along the fast axis of the laser chip 10 is 1 μm.

[0069] Specifically, the dimensions of the receiving groove 3 along the three vertical directions are 8μm, 1μm, and 350μm, forming a cuboid groove. Setting the above-mentioned directional dimensions can reduce the area occupied by the heat dissipation surface 6.

[0070] In the laser of this embodiment, the receiving groove 3 is a cuboid structure; and / or, the heat dissipation surface 6 is arranged around the receiving groove 3.

[0071] With the above configuration, the surrounding heat dissipation surface 6 can improve heat dissipation efficiency; the cuboid groove structure avoids stress concentration and improves the lifespan of the heat sink 20. Preferably, in this embodiment, the heat dissipation surface 6 surrounds the receiving groove 3. Example

[0072] This embodiment provides a heat sink for manufacturing the laser described above. The heat sink has a receiving groove 3 for accommodating the second flip film 222.

[0073] The laser manufactured using the heat sink in this embodiment combines a high thermal conductivity material with a tank structure, thus solving both heat dissipation and film flipping problems.

[0074] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0075] Optionally, specific examples in this embodiment can refer to the examples described in the above embodiments, and will not be repeated here.

[0076] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0077] In the above embodiments of this application, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0078] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A laser, characterized in that, include: Heat sink (20); The laser chip (10) includes a high reflectivity film (21) disposed on the rear cavity surface of the laser chip and a high reflectivity film (22) overflowing from the rear cavity surface. The laser chip (10) is disposed on the heat sink (20) through a connection structure (5). A receiving groove (3) is disposed on the heat sink (20), the receiving groove (3) at least accommodating a portion of the connecting structure (5) such that a receiving space is defined between the connecting structure (5) and the laser chip (10) to accommodate the high reflectivity film (22) that overflows from the rear cavity surface.

2. The laser according to claim 1, characterized in that, The laser chip (10) includes an adjacent first cleavage region (2) and a main chip region (1); the high reflectivity film (22) overflowing from the rear cavity surface includes a first flip film (221) overflowing from the first cleavage region (2) and a second flip film (222) overflowing from the metal layer (12) of the main chip region (1). At least the metal layer (12) and the connection structure (5) define a receiving space to receive the second flip film (222).

3. The laser according to claim 2, characterized in that, Along the fast axis direction of the laser chip (10), at least the projection of the second flip film (222) is located within the receiving groove (3).

4. The laser according to claim 3, characterized in that, The volume of the receiving groove (3) is not less than the volume of the second flipping film (222).

5. The laser according to claim 4, characterized in that, Along the light emission direction of the laser chip (10), the length W of the receiving groove (3) is not less than the length of the second flip film (222); Along the slow axis direction of the laser chip (10), the width L of the receiving groove (3) is not less than the width of the laser chip (10); Along the fast axis direction of the laser, the depth H of the receiving groove (3) is not greater than the sum of the lengths of the second flip film (222) and the second connecting structure (52); The second connection structure (52) is a connection structure (5) located in the receiving groove (3).

6. The laser according to claim 5, characterized in that, Along the fast axis direction of the laser chip (10), the sum of the lengths of the second flip film (222) and the second connecting structure (52) is the first length; Along the fast axis direction of the laser chip (10), the difference between the first length and the depth H of the receiving groove (3) is equal to the length of the first connecting structure (51); The first connection structure (51) is a connection structure (5) connected to the metal layer (12).

7. The laser according to claim 6, characterized in that, The difference between the length W of the receiving groove (3) and the length of the second flip film (222) is 0μm-3μm; The difference between the width L of the receiving groove (3) and the width of the laser chip (10) is 0μm-50μm.

8. The laser according to claim 7, characterized in that, Along the fast axis direction of the laser chip, at least a portion of the projection of the first flip film lies within the receiving groove (3). Along the light emission direction of the laser chip, the overlap length between the first flip film (221) and the receiving groove (3) is 0-3 μm.

9. A heat sink for manufacturing a laser as described in any one of claims 1 to 8, characterized in that, The heat sink is provided with a laser chip (10), the laser chip (10) includes a high reflectivity film (21) disposed on the back cavity surface of the laser chip and a high reflectivity film (22) overflowing from the back cavity surface; the heat sink is provided with a receiving groove (3) for receiving the high reflectivity film (22) overflowing from the back cavity surface.

10. A laser chip for manufacturing a laser as described in any one of claims 1 to 8, characterized in that, The laser chip (10) further includes a second cleavage region (4) and a first cleavage region (2); the second cleavage region (4) is located on the side of the main chip region (1) away from the first cleavage region (2); the second cleavage region (4) is provided with an anti-reflection film (41) for light transmission; along the light output direction of the laser, the length of the first cleavage region (2) is greater than the length of the second cleavage region (4); The laser chip (10) includes a single tube and a bar.

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