MOS tube chip with freewheeling structure, electronic circuit and electronic device

Abstract

The utility model discloses a MOS tube, electronic circuit and electronic equipment with freewheeling structure, MOS tube with freewheeling structure includes the top layer of setting up with grid and source and the bottom layer of setting up with drain electrode, be provided with diode with anode and cathode on the MOS tube core, anode set up on the bottom layer, cathode set up on the top layer. The utility model integrates a diode on the basis of the original process of MOS tube, can take diode as the release loop of MOS tube in the specific application, can prevent MOS tube damage, improves the integration level compared with the scheme of external release loop, and reduces the cost.

Description

Technical Field

[0001] This utility model relates to the field of integrated circuit technology, and in particular to a MOS transistor chip with a freewheeling structure, electronic circuit, and electronic device. Background Technology

[0002] With continuous advancements in semiconductor manufacturing processes, the performance of MOSFETs has been significantly improved, resulting in lower on-resistance and faster switching speeds. These performance enhancements have led to the widespread application of MOSFETs in more fields, thereby driving market demand growth. For example, MOSFETs play a crucial role in key components such as new energy vehicles, battery management systems, and motor controllers, and have become indispensable components.

[0003] MOSFETs are often used as high-current switching devices. When turned off, because the load usually has an inductive component, a change in the current through the inductor will generate an induced voltage across the inductor. Without a release circuit, when the MOSFET is suddenly turned off, the inductor current cannot change abruptly, resulting in a high voltage at the drain, which can easily damage the MOSFET. Existing solutions typically connect a release circuit externally to the MOSFET, which results in lower circuit integration and higher cost.

[0004] Therefore, existing technologies still need to be improved and developed. Utility Model Content

[0005] In view of the shortcomings of the prior art, the purpose of this utility model is to provide a MOSFET, electronic circuit and electronic device with a freewheeling structure, so as to solve the problem of low integration and high cost caused by connecting a release circuit to the periphery of the MOSFET to protect the MOSFET.

[0006] The technical solution of this utility model is as follows:

[0007] In a first aspect, the present invention provides a MOS transistor chip with a freewheeling structure, comprising a top layer having a gate and a source and a bottom layer having a drain; the MOS transistor chip is provided with a diode having an anode and a cathode, the anode being disposed on the bottom layer and the cathode being disposed on the top layer.

[0008] In a further embodiment of this invention, the drain is connected to the anode or cathode of the diode.

[0009] In a further embodiment of this invention, the anode and cathode of the diode are independently disposed on the MOS transistor chip.

[0010] In a further embodiment of this invention, the MOS transistor chip has several unit structures, each unit structure including a gate and a source disposed on the top layer and a drain disposed on the bottom layer.

[0011] A further feature of this invention includes a gate pad, wherein the gate of each of the unit structures is connected to the gate pad.

[0012] In a further embodiment of this invention, the MOS transistor chip is an N-type MOS transistor chip or a P-type MOS transistor chip.

[0013] A MOS transistor chip with a freewheeling structure includes a top layer with a gate and a source, and a bottom layer with a drain; the MOS transistor chip has a diode with an anode and a cathode, the anode and the cathode being disposed on the top layer.

[0014] Secondly, this utility model also provides an electronic circuit, which includes a MOS transistor chip with a freewheeling structure as described above.

[0015] In a further embodiment of this invention, the electronic circuit includes an inductive load switching circuit, a BOOST circuit, and a BUCK circuit.

[0016] Thirdly, the present invention also provides an electronic device comprising the electronic circuits described above.

[0017] This invention provides a MOSFET with a freewheeling structure, an electronic circuit, and an electronic device. The MOSFET chip with the freewheeling structure includes a top layer with a gate and a source, and a bottom layer with a drain. A diode with an anode and a cathode is disposed on the MOSFET chip, with the anode disposed on the bottom layer and the cathode disposed on the top layer. This invention integrates a diode based on the existing MOSFET process. In practical applications, the diode can be used as a release circuit for the MOSFET, preventing damage from voltage spikes. Compared to an external release circuit, this invention improves integration and reduces cost. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the top-level structure of the MOS transistor in one embodiment of this utility model.

[0020] Figure 2 This is a schematic diagram of the structure of a MOS transistor with the top metal layer removed in one embodiment of the present invention.

[0021] Figure 3 This is a circuit diagram of a MOSFET and a diode.

[0022] Figure 4 This is a schematic diagram of the top-level structure of a MOS transistor with a planar diode in one embodiment of the present invention.

[0023] Figure 5 This is a schematic diagram of the top-level structure of a MOS transistor with a planar diode, with the top metal layer removed, in one embodiment of this utility model.

[0024] Figure 6 This is a top view of a planar diode in one embodiment of the present invention.

[0025] Figure 7 This is a longitudinal view of a planar diode in one embodiment of the present invention.

[0026] Figure 8 This is a schematic diagram of the top-level structure of a MOS transistor with a vertical diode in one embodiment of the present invention.

[0027] Figure 9 This is a schematic diagram of the top layer structure of a MOS transistor with a vertical diode, with the top metal layer removed, in one embodiment of this utility model.

[0028] Figure 10 This is a top view of a vertical diode in one embodiment of the present invention.

[0029] Figure 11 This is a longitudinal view of a vertical diode in one embodiment of the present invention.

[0030] Figure 12 This is a circuit diagram of an inductive load switching circuit in one application embodiment of this utility model.

[0031] Figure 13 This is a circuit diagram of the BOOST boost circuit in one application embodiment of this utility model.

[0032] Figure 14 This is a circuit diagram of the BUCK step-down circuit in one application embodiment of this utility model. Detailed Implementation

[0033] This utility model provides a MOSFET with a freewheeling structure, an electronic circuit, and an electronic device. To make the purpose, technical solution, and effects of this utility model clearer and more explicit, the following describes this utility model in further detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of this utility model and are not intended to limit this utility model.

[0034] In the implementation methods and claims, unless otherwise specified in the text, the terms "a," "an," "the," and "the" may also include plural forms. If the embodiments of this utility model involve descriptions of "first," "second," etc., such descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features.

[0035] It should be further understood that the term "comprising" as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be understood that when an element is referred to as "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements present. Furthermore, "connected" or "coupled" as used herein can include wireless connections or wireless coupling. The term "and / or" as used herein includes all or any of the units and all combinations thereof of one or more associatedly listed items.

[0036] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0037] Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0038] Please also refer to Figures 1 to 11 This utility model provides a preferred embodiment of a MOS transistor chip with a freewheeling structure.

[0039] In some embodiments, such as Figures 1 to 5 As shown, this utility model provides a MOS transistor chip with a freewheeling structure, which includes a top layer with a gate and a source and a bottom layer with a drain; the MOS transistor chip is provided with a diode having an anode and a cathode, the anode being disposed on the bottom layer and the cathode being disposed on the top layer.

[0040] In this embodiment, as Figure 3 As shown, Figure 3 The circuit schematic for a MOSFET and a diode is shown below. Figure 1 This is a schematic diagram of the top layer of MOSFET Q1. The top layer of MOSFET Q1 contains the source and gate, while the entire bottom layer is the drain. Figure 2 This is a schematic diagram of a MOSFET with the top metal layer removed. Figure 4 and Figure 5 As shown, the cathode K and anode A of diode D1 are integrated on the top and bottom layers of MOSFET Q1, respectively, forming a vertical structure, i.e., the cathode K and anode A of diode D1 are arranged vertically. In this way, this invention integrates a diode based on the existing MOSFET process. In practical applications, the diode can be used as a release circuit for the MOSFET, preventing damage from voltage spikes. Compared to an external release circuit, this improves integration and reduces cost.

[0041] In some embodiments, such as Figures 4 to 7 As shown, the anode A and cathode K of the diode D1 are independently disposed on the MOS transistor chip.

[0042] In this embodiment, the anode A and cathode K of the diode D1 are independently disposed on the top layer of the MOSFET Q1. That is, the anode A and cathode K of the diode D1 are not initially connected to the drain of the MOSFET Q1. Instead, in a subsequent process, the anode A and cathode K of the diode D1 are connected to the MOSFET Q1 by wire bonding to achieve the corresponding circuit application, such as a BUCK step-down circuit.

[0043] In some embodiments, the drain is connected to the anode A or cathode K of the diode D1.

[0044] In this embodiment, the diode D1 can be directly connected to the drain of the MOSFET Q1 to adapt to the corresponding application circuit, such as a BOOST boost circuit.

[0045] In some embodiments, such as Figure 2 As shown, the MOS transistor chip has several unit structures 200, each unit structure 200 including a gate G and a source S disposed on the top layer and a drain disposed on the bottom layer.

[0046] Furthermore, the MOS transistor chip also includes a gate pad 100, and the gate G of each of the unit structures 200 is connected to the gate pad 100.

[0047] In this embodiment, the MOS transistor chip is composed of several unit structures 200 having gates G, sources S and drains, and each gate G is connected to the gate pad 100.

[0048] In some embodiments, the MOSFET chip is an N-type MOSFET chip or a P-type MOSFET chip. In this embodiment, the MOSFET chip can be either an N-type MOSFET chip or a P-type MOSFET chip, and both types of MOSFET chips can use the same photolithography plate.

[0049] In other embodiments, such as Figures 8 to 11 As shown, this utility model also provides a MOS transistor chip for preventing voltage spikes, which includes a top layer with a gate and a source and a bottom layer with a drain; the MOS transistor chip is provided with a diode having an anode and a cathode, and the anode and the cathode are disposed on the top layer.

[0050] The difference from the previous embodiment is that, as Figure 8 , Figure 10 and Figure 11 As shown, the anode A and cathode K of diode D1 are disposed on the top layer of MOSFET Q1, meaning that the anode A and cathode K of diode D1 are on the same plane as the source S and gate G of MOSFET Q1, forming a planar structure. The difference between the vertical structure (where the cathode K and anode A of diode D1 are located on the top and bottom layers of the MOSFET chip, respectively) and the planar structure (where both the cathode K and anode A of diode D1 are located on the top layer of the MOSFET chip) lies in the fact that the vertical structure has a stronger overcurrent capability per unit area, but its manufacturing complexity is relatively higher. The planar structure, on the other hand, has lower manufacturing difficulty, but its overcurrent capability per unit area is lower.

[0051] In some embodiments, the present invention also provides an electronic circuit, which includes a MOS transistor chip with a freewheeling structure as described above.

[0052] In some embodiments, the electronic circuit includes an inductive load switching circuit, a BOOST circuit, and a BUCK circuit.

[0053] Figure 12 This is a circuit diagram of an inductive load switching circuit in one application embodiment of this utility model, as shown below. Figure 12As shown, the inductive load switching circuit includes a MOSFET Q1, an inductive load RL, and a diode D1. The MOSFET is an NMOS, and IN is the signal input. When IN = 1 (high level), the MOSFET Q1 is turned on, and current flows through the inductive load RL. When IN = 0 (low level), the MOSFET Q1 is turned off, and the current in the inductive load RL cannot change abruptly. Without the presence of diode D1, a very high voltage would be generated at the drain (D) of the MOSFET Q1, which could easily damage the MOSFET Q1. After connecting diode D1, as long as the voltage at the drain (D) of the MOSFET Q1 is greater than the VCC voltage plus the forward voltage drop of diode D1 (less than 1V), current will flow from diode D1 to VCC, thus protecting the MOSFET Q1.

[0054] Figure 13 This is a circuit diagram of the BOOST boost circuit in one application embodiment of this utility model, as shown below. Figure 13 As shown, the BOOST boost circuit includes a MOSFET Q1, a diode D1, a power inductor L, and an energy storage capacitor C. The MOSFET Q1 is an NMOS, PWM is the switching signal input, VCC is the power supply, and GND is ground. The power inductor L acts as an energy storage component. When PWM = 1 (high level), the MOSFET Q1 is turned on, and current flows through the power inductor L, gradually increasing. When PWM = 0 (low level), the MOSFET Q1 is turned off, and the current in the power inductor L cannot change abruptly. The current flows through diode D1 to the energy storage capacitor C. As the PWM continuously switches between high and low, a controllable voltage source higher than the power supply VCC can be obtained across the energy storage capacitor C. The specific voltage depends on the PWM signal and the load on the energy storage capacitor C.

[0055] Figure 14 This is a circuit diagram of the BUCK step-down circuit in one application embodiment of this utility model, as shown below. Figure 14 As shown, the BUCK step-down circuit includes a MOSFET Q1, a power inductor L, a diode D1, and a storage capacitor C. MOSFET Q1 is a PMOS, PWM is the switching signal input, VCC is the power supply, and GND is ground. The power inductor L acts as an energy storage component in the BUCK circuit. When PWM = 0 (low level), MOSFET Q1 is turned on, and current flows from the power inductor L to the storage capacitor C, gradually increasing in current. When PWM = 1 (high level), MOSFET Q1 is turned off, and the current in the power inductor L cannot change abruptly. The current flows through diode D1 from ground GND to the storage capacitor C. As the PWM continuously switches between high and low, a controllable voltage source lower than the power supply VCC can be obtained across the storage capacitor C. The specific voltage depends on the PWM and the load on the storage capacitor C.

[0056] In some embodiments, the present invention also provides an electronic device comprising the electronic circuit described above. Specific examples of such electronic circuits are described herein and will not be repeated here.

[0057] In summary, the MOS transistor chip, electronic circuit, and electronic device with a freewheeling structure provided by this utility model have the following beneficial effects:

[0058] A diode is integrated into the existing process of MOSFET. In specific applications, the diode can be used as a release circuit for MOSFET, which can prevent MOSFET from being damaged by voltage spikes. Compared with the solution of external release circuit, the integration is improved and the cost is reduced.

[0059] It should be understood that the application of this utility model is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A MOS transistor chip with a freewheeling structure, characterized in that, It includes a top layer with a gate and a source, and a bottom layer with a drain; the MOS transistor chip has a diode with an anode and a cathode, the anode is disposed on the bottom layer, and the cathode is disposed on the top layer.

2. The MOS transistor chip with a freewheeling structure according to claim 1, characterized in that, The drain is connected to the anode or cathode of the diode.

3. The MOS transistor chip with a freewheeling structure according to claim 1, characterized in that, The anode and cathode of the diode are independently disposed on the MOS transistor chip.

4. The MOS transistor chip with a freewheeling structure according to claim 1, characterized in that, The MOS transistor chip has several unit structures, each unit structure including a gate and a source disposed on the top layer and a drain disposed on the bottom layer.

5. The MOS transistor chip with a freewheeling structure according to claim 4, characterized in that, It also includes gate pads, and the gates of each of the unit structures are respectively connected to the gate pads.

6. The MOS transistor chip with a freewheeling structure according to claim 1, characterized in that, The MOS transistor chip is an N-type MOS transistor chip or a P-type MOS transistor chip.

7. A MOS transistor chip with a freewheeling structure, characterized in that, It includes a top layer with a gate and a source, and a bottom layer with a drain; the MOS transistor chip has a diode with an anode and a cathode, and the anode and the cathode are disposed on the top layer.

8. An electronic circuit, characterized in that, Includes a MOS transistor chip with a freewheeling structure as described in any one of claims 1-6 or claim 7.

9. The electronic circuit according to claim 8, characterized in that, The electronic circuit includes an inductive load switching circuit, a BOOST circuit, and a BUCK circuit.

10. An electronic device, characterized in that, Includes the electronic circuit as described in claim 8 or 9.

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