Photovoltaic cell and photovoltaic module

Abstract

The application relates to a photovoltaic cell and a photovoltaic module. The photovoltaic cell comprises a perovskite layer, a charge transport layer located on one side of the perovskite layer along a first direction, wherein the first direction is the layer stacking direction of the photovoltaic cell, and a passivation structure located between the perovskite layer and the charge transport layer, the passivation structure comprising a first passivation layer and a second passivation layer stacked along the first direction, the first passivation layer being continuously distributed along a first plane, and the second passivation layer being discontinuously distributed along the first plane, wherein the first plane is perpendicular to the first direction. The above photovoltaic cell and photovoltaic module can simultaneously achieve high defect passivation coverage and high efficient carrier transport, thereby improving the cell efficiency.

Description

Technical Field

[0001] This application relates to the field of photovoltaic cell technology, and in particular to photovoltaic cells and photovoltaic modules. Background Technology

[0002] Perovskite solar cells (PSCs) have become an important development direction for next-generation photovoltaic technology due to their rapid increase in power conversion efficiency (PCE) and low cost. However, these cells suffer from severe nonradiative recombination at the interface between the perovskite layer and the adjacent charge transport layer. The root cause is that the defect density on the perovskite surface (such as uncoordinated lead ions and vacancies) is about three orders of magnitude higher than in the bulk phase, thus inducing severe nonradiative recombination and leading to significant open-circuit voltage loss and efficiency degradation.

[0003] To suppress recombination, existing technologies typically introduce passivation layers at the interface. However, this often fails to circumvent the inherent contradiction between passivation coverage and carrier transport efficiency—pursuing high passivation coverage can hinder charge extraction across the interface, while maintaining unimpeded transport inevitably sacrifices the integrity of defect passivation. Therefore, there is an urgent need for an interface passivation scheme that can simultaneously achieve high defect passivation coverage and efficient carrier transport. Utility Model Content

[0004] Therefore, it is necessary to provide a photovoltaic cell and a photovoltaic module that can simultaneously achieve high defect passivation coverage and efficient carrier transport, thereby improving cell efficiency.

[0005] A photovoltaic cell, the photovoltaic cell comprising:

[0006] Perovskite layer;

[0007] A charge transport layer is located on one side of the perovskite layer along a first direction, wherein the first direction is the stacking direction of the photovoltaic cell; and

[0008] A passivation structure is located between the perovskite layer and the charge transport layer. The passivation structure includes a first passivation layer and a second passivation layer stacked along the first direction. The first passivation layer is continuously distributed along a first plane, and the second passivation layer is discontinuously distributed along the first plane, wherein the first plane is perpendicular to the first direction.

[0009] In some embodiments, the charge transport layer is an electron transport layer, and the photovoltaic cell further includes a hole transport layer, a transparent electrode layer, and a metal electrode layer;

[0010] The hole transport layer is located on the side of the perovskite layer away from the passivation structure, the transparent electrode layer is located on the side of the hole transport layer away from the perovskite layer, and the metal electrode layer is located on the side of the electron transport layer away from the passivation structure.

[0011] In some embodiments, in the passivation structure, the first passivation layer is located on the side closer to the perovskite layer, and the second passivation layer is located on the side closer to the electron transport layer.

[0012] In some embodiments, the charge transport layer is a hole transport layer, and the photovoltaic cell further includes an electron transport layer, a transparent electrode layer, and a metal electrode layer;

[0013] The electron transport layer is located on the side of the perovskite layer away from the passivation structure, the transparent electrode layer is located on the side of the electron transport layer away from the perovskite layer, and the metal electrode layer is located on the side of the hole transport layer away from the passivation structure.

[0014] In some embodiments, the photovoltaic cell further includes a silicon substrate cell unit and a tunneling junction, wherein the tunneling junction is located on the side of the charge transport layer away from the passivation structure, and the silicon substrate cell unit is located on the side of the tunneling junction away from the charge transport layer.

[0015] In some embodiments, the thickness of the first passivation layer along the first direction is d1, where 0 < d1 ≤ 5 nm;

[0016] And / or, the thickness of the second passivation layer along the first direction is d2, where 0 < d2 ≤ 500 nm.

[0017] In some embodiments, the second passivation layer includes a plurality of passivation portions spaced apart along a second direction, wherein the second direction is perpendicular to the first direction;

[0018] The passivation portion has a dimension of d3 along the second direction, and the spacing between adjacent passivation portions along the second direction is d4, where 10d4≤d3≤1μm and 0<d4≤10nm.

[0019] In some embodiments, the second passivation layer includes a plurality of passivation portions spaced apart along a second direction, wherein the second direction is perpendicular to the first direction;

[0020] The projection shape of the passivation portion along the first direction is circular, elliptical, or polygonal.

[0021] In some embodiments, the passivation structure is made of an insulating material or a low-conductivity material, wherein the conductivity of the low-conductivity material is in the range of 10. -20 S / cm to 10 -10 S / cm.

[0022] A photovoltaic module, the photovoltaic module comprising the photovoltaic cells described above.

[0023] The aforementioned photovoltaic cells and modules employ a dual-layer structure design of "continuous first passivation layer + discontinuous second passivation layer," cleverly resolving the fundamental contradiction in existing technologies where high defect passivation coverage and efficient carrier transport are difficult to achieve simultaneously. Specifically, the continuously distributed first passivation layer comprehensively covers the perovskite surface, effectively passivating most interface defects (such as uncoordinated lead ions and vacancies), significantly suppressing non-radiative recombination, and thus reducing open-circuit voltage loss. Simultaneously, the discontinuous second passivation layer, while providing additional / complementary passivation points, naturally creates numerous penetrating microscopic charge transport channels within the layer, ensuring that carriers can efficiently cross the interface from the perovskite layer to the charge transport layer, avoiding the obstruction to carrier transport inherent in traditional single continuous passivation layers. This synergistic effect achieves simultaneous optimization of high-integrity passivation and low transport barriers, providing a crucial interface solution for improving the open-circuit voltage and final power conversion efficiency (PCE) of photovoltaic cells, as well as reducing efficiency degradation. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of a photovoltaic cell in one embodiment of this application.

[0025] Figure 2 This is a schematic diagram of a photovoltaic cell in another embodiment of this application.

[0026] Figure 3 This is a schematic diagram of a photovoltaic cell in another embodiment of this application.

[0027] Figure 4 This is a schematic diagram of the passivation structure in one embodiment of this application.

[0028] Figure label:

[0029] 100, Perovskite layer; 200, Electron transport layer; 300, Hole transport layer; 400, Passivation structure; 410, First passivation layer; 420, Second passivation layer; 421, Passivation section; 500, Transparent electrode layer; 600, Metal electrode layer;

[0030] 20. Silicon-based solar cell; 30. Tunnel junction. Detailed Implementation

[0031] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0032] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0033] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0034] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0035] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0036] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0037] See Figures 1 to 3 An embodiment of this application provides a photovoltaic cell comprising a perovskite layer 100, a charge transport layer, and a passivation structure 400. The charge transport layer is located on one side of the perovskite layer 100 along a first direction, wherein the first direction is the stacking direction of the photovoltaic cell. The passivation structure 400 is located between the perovskite layer 100 and the charge transport layer, and the passivation structure 400 includes a first passivation layer 410 and a second passivation layer 420 stacked along the first direction. The first passivation layer 410 is continuously distributed along a first plane, and the second passivation layer 420 is discontinuously distributed along the first plane, wherein the first plane is perpendicular to the first direction.

[0038] The photovoltaic cell in the above embodiment adopts a two-layer structure design of "continuous first passivation layer 410 + discontinuous second passivation layer 420", which cleverly solves the fundamental contradiction in the prior art of balancing high defect passivation coverage and efficient carrier transport. Specifically, the continuously distributed first passivation layer 410 can comprehensively cover the perovskite surface, effectively passivating most interface defects (such as uncoordinated lead ions, vacancies, etc.), significantly suppressing non-radiative recombination, thereby reducing open-circuit voltage loss. At the same time, the discontinuously distributed second passivation layer 420, while providing additional / complementary passivation points, naturally forms numerous penetrating microscopic charge transport channels within the layer due to its discontinuity, ensuring that carriers can be efficiently extracted from the perovskite layer 100 to the charge transport layer across the interface, avoiding the obstruction of carrier transport by the traditional single continuous passivation layer. This synergistic effect achieves simultaneous optimization of high-integrity passivation and low transport barrier, providing a key interface solution for improving the open-circuit voltage and final power conversion efficiency (PCE) of photovoltaic cells, as well as reducing efficiency degradation.

[0039] Specifically, to address the issue of high defect passivation coverage, the first passivation layer 410 is continuously distributed along the first plane. This means that the layer acts like a dense "net" or "film," covering the entire perovskite surface. This ensures that the high-density defect points on the perovskite surface are contacted and passivated by the layer material to the greatest extent, reducing the defect state density that induces non-radiative recombination from the source. This is the foundation for achieving efficient passivation. To address the contradiction of hindered carrier transport, the second passivation layer 420 is discontinuously distributed along the first plane. That is, this layer is not completely continuous but contains "gaps" or "gap" regions. These gap regions directly connect the first passivation layer 410 and the charge transport layer on one side, forming a microscopic charge transport channel. In other words, these gap regions provide a low-resistance, direct physical path for carriers, allowing them to be smoothly transported from the perovskite layer 100 (through the first passivation layer 410) to the charge transport layer. This effectively avoids the potential barrier or blockage caused by a single continuous passivation layer for carrier extraction. Furthermore, although the second passivation layer 420 is discontinuous, it can still provide additional or different passivation mechanisms in the covered area, forming a complementary or synergistic passivation with the first passivation layer 410. In summary, the first passivation layer 410 provides comprehensive basic passivation, while the second passivation layer 420 provides selective enhanced passivation and conduction. The two work synergistically to improve the final PCE and stability of the cell, providing a strong guarantee for the development of high-performance photovoltaic cells.

[0040] See Figure 1 In some embodiments, the charge transport layer is an electron transport layer 200, and the photovoltaic cell further includes a hole transport layer 300, a transparent electrode layer 500, and a metal electrode layer 600. The hole transport layer 300 is located on the side of the perovskite layer 100 away from the passivation structure 400, the transparent electrode layer 500 is located on the side of the hole transport layer 300 away from the perovskite layer 100, and the metal electrode layer 600 is located on the side of the electron transport layer 200 away from the passivation structure 400.

[0041] Specifically, in Figure 1 In the illustrated embodiment, the photovoltaic cell is a pin-type, i.e., an inverted perovskite cell. The transparent electrode layer 500, hole transport layer 300, perovskite layer 100, passivation structure 400, electron transport layer 200, and metal electrode layer 600 are arranged sequentially along a first direction.

[0042] Typically, in inverted perovskite solar cells, defect-induced nonradiative recombination at the interface between the perovskite layer 100 and the electron transport layer 200 is particularly severe. In the above embodiment, addressing the critical issue of more severe nonradiative recombination at the interface between the perovskite layer 100 and the electron transport layer 200 in inverted perovskite solar cells, a passivation structure 400 is innovatively and precisely positioned between the perovskite layer 100 and the electron transport layer 200. A continuously distributed first passivation layer 410 achieves comprehensive passivation of interface defects, while a discontinuously distributed second passivation layer 420 maintains the electron transport channel, effectively solving the problem of severe interface recombination on the electron transport side in inverted structures. This targeted design not only significantly reduces the interface defect state density and suppresses voltage loss caused by nonradiative recombination, but also ensures that photogenerated electrons can efficiently transfer from the perovskite layer to the electron transport layer 200, optimizing charge collection efficiency while maintaining a high open-circuit voltage.

[0043] See Figure 1 In some embodiments, in the passivation structure 400, the first passivation layer 410 is located on the side close to the perovskite layer 100, and the second passivation layer 420 is located on the side close to the electron transport layer 200.

[0044] In the above embodiments, by limiting the sequence relationship of the first passivation layer 410 being adjacent to the perovskite layer 100 and the second passivation layer 420 being adjacent to the electron transport layer 200, the gradient optimization of the interface function is achieved: the first passivation layer 410 directly contacts the surface of the perovskite layer 100, and its continuous distribution characteristics can fully cover and anchor highly active defect sites (such as uncoordinated lead ions), blocking non-radiative recombination paths from the source; while the discontinuous distribution design of the second passivation layer 420 forms a localized electron tunneling channel near the electron transport layer 200, which not only ensures efficient electron injection into the electron transport layer 200 through direct physical contact in the discontinuous region, but also uses the fragmented coverage of the second passivation layer 420 to modify the interface energy level of the electron transport layer 200, reducing the carrier extraction barrier. This directional arrangement of "continuous passivation on the perovskite side / discontinuous conduction on the transport layer side" is particularly effective in addressing the severe recombination at the electron transport interface in the inverted structure. It achieves synergy between defect repair and bandgap modulation at the molecular scale: continuous passivation of the inner layer maximizes suppression of the interface state density, while the discontinuous structure of the outer layer optimizes charge extraction dynamics by precisely controlling the local contact characteristics of the electron transport layer 200. This significantly improves the fill factor while maintaining a high open-circuit voltage, solving the core contradiction that traditional single passivation layers cannot simultaneously achieve interface integrity and carrier injection efficiency.

[0045] See Figure 2In some embodiments, the charge transport layer is a hole transport layer 300, and the photovoltaic cell also includes an electron transport layer 200, a transparent electrode layer 500, and a metal electrode layer 600. The electron transport layer 200 is located on the side of the perovskite layer 100 away from the passivation structure 400, the transparent electrode layer 500 is located on the side of the electron transport layer 200 away from the perovskite layer 100, and the metal electrode layer 600 is located on the side of the hole transport layer 300 away from the passivation structure 400.

[0046] Specifically, in Figure 2 In the illustrated embodiment, the photovoltaic cell is a nip-type, i.e., a formal perovskite cell. The transparent electrode layer 500, electron transport layer 200, perovskite layer 100, passivation structure 400, hole transport layer 300, and metal electrode layer 600 are arranged sequentially along the first direction.

[0047] Typically, in conventional perovskite solar cells, defect-induced nonradiative recombination at the interface between the perovskite layer 100 and the hole transport layer 300 is particularly severe. In the above embodiment, addressing the critical bottleneck of prominent nonradiative recombination at the interface between the perovskite layer 100 and the hole transport layer 300 in conventional perovskite solar cells, a passivation structure 400 is innovatively and precisely integrated between the perovskite layer 100 and the hole transport layer 300. A continuously distributed first passivation layer 410 achieves comprehensive passivation of interface defects, while a discontinuously distributed second passivation layer 420 maintains the hole transport channel, effectively solving the problem of severe recombination at the hole transport side interface in the inverted structure.

[0048] See Figure 2 In some embodiments, in the passivation structure 400, the first passivation layer 410 is located on the side close to the perovskite layer 100, and the second passivation layer 420 is located on the side close to the hole transport layer 300.

[0049] In the above embodiments, by defining the directional arrangement of the first passivation layer 410 adjacent to the perovskite layer 100 and the second passivation layer 420 adjacent to the hole transport layer 300, the synergistic optimization of defect repair and hole transport is achieved at the molecular scale: the continuous distribution of the first passivation layer 410 directly bonds the high-density iodine vacancies and uncoordinated lead ion defects on the perovskite surface; while the discontinuous distribution of the second passivation layer 420 forms a nanoscale hole tunneling window on the side of the hole transport layer 300. Its fragmented structure not only establishes a direct transition channel from the top of the perovskite valence band to the HOMO energy level of the hole transport material through the exposed area, but also uses the molecular dipole moment of the covered area to regulate the bending of the interface band, thereby reducing the hole injection barrier.

[0050] See Figure 3In some embodiments, the photovoltaic cell further includes a silicon substrate cell 20 and a tunnel junction 30, wherein the tunnel junction 30 is located on the side of the charge transport layer away from the passivation structure 400, and the silicon substrate cell 20 is located on the side of the tunnel junction 30 away from the charge transport layer.

[0051] Specifically, in Figure 3 In the illustrated embodiment, the photovoltaic cell is a tandem cell of pin-type perovskite and silicon cells. The transparent electrode layer 500, hole transport layer 300, perovskite layer 100, passivation structure 400, electron transport layer 200, tunnel junction 30, and silicon substrate cell unit 20 are arranged sequentially along a first direction.

[0052] In the above embodiments, the tunnel junction 30 monolithically integrates the perovskite top cell and the silicon substrate cell 20, achieving a synergistic breakthrough in full-spectrum absorption and carrier management. The passivation structure 400 simultaneously optimizes interface defect passivation and charge transport efficiency in the perovskite top cell, while the tunnel junction 30 establishes an ohmic contact between the perovskite charge transport layer and the silicon substrate cell 20 through an ultrathin heavily doped layer, enabling photogenerated carriers to efficiently recombine via a tunneling mechanism, significantly reducing interconnect resistance losses. The silicon substrate cell 20 not only effectively collects long-wavelength photons of 800-1200nm, but its back surface field structure also significantly improves the utilization rate of infrared photons. Ultimately, through energy level gradient matching between the wide bandgap layer of the perovskite and the narrow bandgap layer of the silicon, the photoelectric conversion efficiency of the tandem cell exceeds its theoretical limit, while maintaining a high fill factor. This provides a core architecture for industrialized tandem devices that combines high efficiency and process compatibility.

[0053] See Figures 1 to 3 In some embodiments, the thickness of the first passivation layer 410 along the first direction is d1, where 0 < d1 ≤ 5 nm.

[0054] In the above embodiments, by limiting the thickness d1 of the first passivation layer 410 to 5nm, atomic-level precise interface control is achieved: the ultrathin continuous first passivation layer 410 can not only cover perovskite surface defects (such as dangling bonds of saturated uncoordinated lead ions) in a single layer, compressing the interface state density to a low state, but also maintain the carrier transport efficiency across the interface through the quantum tunneling effect, while avoiding the problem of increased carrier transport barrier caused by traditional thick passivation layers.

[0055] See Figures 1 to 3 In some embodiments, the thickness of the second passivation layer 420 along the first direction is d2, where 0 < d2 ≤ 500 nm.

[0056] In the above embodiments, by limiting the thickness d2 of the second passivation layer 420 to 500nm, the localization passivation intensity and carrier tunneling efficiency are well balanced: the discontinuously distributed second passivation layer 420, while maintaining nanoscale island coverage, has a submicron-level thickness that can ensure sufficient modification of interface defects of electron transport layer 200 or hole transport layer 300, and can also maintain carrier cross-layer transport efficiency through quantum tunneling and hot electron injection mechanisms.

[0057] See Figures 1 to 4 In some embodiments, the second passivation layer 420 includes a plurality of passivation portions 421 spaced apart along a second direction, wherein the second direction is perpendicular to the first direction; the size of the passivation portion 421 along the second direction is d3, and the spacing between adjacent passivation portions 421 in the second direction is d4, 10d4≤d3≤1μm, 0<d4≤10nm.

[0058] In the above embodiments, by limiting the size relationship of the passivation portions 421 in the second passivation layer 420, a periodic structure of "wide passivation islands-narrow tunneling gaps" is constructed at the nanoscale. This allows a single passivation portion 421 to fully modify the interface defects of the charge transport layer within a micrometer-scale lateral dimension (d3). At the same time, the quantum tunneling channels formed by the ultra-narrow spacing (d4≤10nm) allow charge carriers to cross the potential barrier with a very high probability. The design of d3≥10d4 not only ensures a high passivation coverage rate, but also avoids the bending of the carrier migration path through the micrometer-scale island distribution, keeping the effective mobility of holes / electrons at a high level. Ultimately, this reduces the interface recombination current density, increases the fill factor, and reduces voltage loss.

[0059] See Figures 1 to 4 In some embodiments, the second passivation layer 420 includes a plurality of passivation portions 421 spaced apart along a second direction, wherein the second direction is perpendicular to the first direction; the projection shape of the passivation portions 421 along the first direction is circular, elliptical or polygonal.

[0060] Preferably, the projected shapes of each passivation portion 421 are identical to facilitate manufacturing. Of course, in some embodiments, the projected shapes of each passivation portion 421 may not be exactly the same.

[0061] See Figures 1 to 3 In some embodiments, the passivation structure 400 is made of an insulating material or a low-conductivity material, with the low-conductivity material having a conductivity range of 10. -20 S / cm to 10 -10 S / cm.

[0062] In the above embodiments, by limiting the passivation structure 400 to use an insulating or low-conductivity material, a precise balance between interface passivation and electrical isolation is achieved: the insulating or low-conductivity properties make the passivation structure 400 itself almost non-participating in carrier transport, avoiding the risk of shunting loss. It can block direct contact leakage between the perovskite layer 100 and the charge transport layer, and maintain carrier transport across the interface through the quantum tunneling effect.

[0063] Furthermore, in some embodiments, the passivation structure 400 may be selected from one or more of the following: zirconium oxide, aluminum oxide, iron oxide, lithium oxide, germanium oxide, silicon oxide, phosphorus pentoxide, boron oxide, magnesium oxide, chromium oxide, zirconium fluoride, aluminum fluoride, iron fluoride, germanium fluoride, silicon fluoride, boron fluoride, magnesium fluoride, lithium fluoride, polyethylene, polypropylene, polytetrafluoroethylene, polyvinyl chloride, polycarbonate, polyacrylic acid, polyamide, polysulfone, polymethyl methacrylate, polyoxymethylene, phenolic resin, epoxy resin, melamine-formaldehyde resin, polyimide, rubber, fiber, 2-phenylethylamine hydroiodate, piperazine diiodate, or oleoamine iodide.

[0064] See Figures 1 to 3 The photovoltaic module provided in one embodiment of this application includes the photovoltaic cell in any of the above embodiments.

[0065] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A photovoltaic cell, characterized in that, The photovoltaic cell includes: Perovskite layer; A charge transport layer is located on one side of the perovskite layer along a first direction, wherein the first direction is the stacking direction of the photovoltaic cell; and A passivation structure is located between the perovskite layer and the charge transport layer. The passivation structure includes a first passivation layer and a second passivation layer stacked along the first direction. The first passivation layer is continuously distributed along a first plane, and the second passivation layer is discontinuously distributed along the first plane, wherein the first plane is perpendicular to the first direction.

2. The photovoltaic cell according to claim 1, characterized in that, The charge transport layer is an electron transport layer, and the photovoltaic cell also includes a hole transport layer, a transparent electrode layer, and a metal electrode layer; The hole transport layer is located on the side of the perovskite layer away from the passivation structure, the transparent electrode layer is located on the side of the hole transport layer away from the perovskite layer, and the metal electrode layer is located on the side of the electron transport layer away from the passivation structure.

3. The photovoltaic cell according to claim 2, characterized in that, In the passivation structure, the first passivation layer is located on the side closer to the perovskite layer, and the second passivation layer is located on the side closer to the electron transport layer.

4. The photovoltaic cell according to claim 1, characterized in that, The charge transport layer is a hole transport layer, and the photovoltaic cell also includes an electron transport layer, a transparent electrode layer, and a metal electrode layer; The electron transport layer is located on the side of the perovskite layer away from the passivation structure, the transparent electrode layer is located on the side of the electron transport layer away from the perovskite layer, and the metal electrode layer is located on the side of the hole transport layer away from the passivation structure.

5. The photovoltaic cell according to claim 1, characterized in that, The photovoltaic cell also includes a silicon substrate cell unit and a tunneling junction, wherein the tunneling junction is located on the side of the charge transport layer away from the passivation structure, and the silicon substrate cell unit is located on the side of the tunneling junction away from the charge transport layer.

6. The photovoltaic cell according to any one of claims 1 to 5, characterized in that, The thickness of the first passivation layer along the first direction is d1, where 0 < d1 ≤ 5 nm; And / or, the thickness of the second passivation layer along the first direction is d2, where 0 < d2 ≤ 500 nm.

7. The photovoltaic cell according to any one of claims 1 to 5, characterized in that, The second passivation layer includes a plurality of passivation portions spaced apart along a second direction, wherein the second direction is perpendicular to the first direction; The passivation portion has a dimension of d3 along the second direction, and the spacing between adjacent passivation portions along the second direction is d4, where 10d4≤d3≤1μm and 0<d4≤10nm.

8. The photovoltaic cell according to any one of claims 1 to 5, characterized in that, The second passivation layer includes a plurality of passivation portions spaced apart along a second direction, wherein the second direction is perpendicular to the first direction; The projection shape of the passivation portion along the first direction is circular, elliptical, or polygonal.

9. The photovoltaic cell according to any one of claims 1 to 5, characterized in that, The passivation structure is made of an insulating material or a low-conductivity material, wherein the conductivity of the low-conductivity material is in the range of 10. -20 S / cm to 10 -10 S / cm.

10. A photovoltaic module, characterized in that, The photovoltaic module includes the photovoltaic cell as described in any one of claims 1 to 9.

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