power device

Abstract

The application discloses a power device, comprising a heat dissipation base, a refrigeration component and a power chip which are stacked along a first direction, the refrigeration component comprises a heat absorption part and a heat release part which are distributed along the first direction, the refrigeration component is connected with the power chip through the heat absorption part and connected with the heat dissipation base through the heat release part; wherein the power device further comprises a heat conduction structure, the heat conduction structure is arranged on at least one side of the refrigeration component along the first direction, the heat conduction structure presents a first form under a first temperature condition and presents a second form under a second temperature condition, the first temperature condition is higher than the second temperature condition, and the flowability of the first form is greater than that of the second form. According to the embodiment of the application, the power device can pass through the one-way heat dissipation path between the power chip and the heat dissipation base through the refrigeration component, and the heat conduction path of the refrigeration component is optimized through the heat conduction structure to further optimize the heat dissipation effect of the power device.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of electrical elements, and particularly relates to a power device. BACKGROUND

[0002] The power device refers to an electrical element used for realizing electric energy conversion and control in a power electronic system, and is obtained by packaging a semiconductor device used for performing a switching action. With the continuous development of power electronic technology towards high frequency, miniaturization and integration, the number of integrated transistor tubes in a chip in the power device increases exponentially.

[0003] In the related art, the mainstream heat dissipation mode of the power device is passive heat dissipation, which mainly removes the heat emitted from the surface of the chip through air cooling or water cooling. However, the passive heat dissipation form is difficult to adapt to the rapid increase in the heat flux density of the chip, which affects the electrical performance of the power device, and even causes the transistor to burn out and the chip to break. CONTENT OF THE INVENTION

[0004] Embodiments of the application provide a power device, which can optimize the heat dissipation path of the power chip to improve the use performance and reliability of the power device.

[0005] Embodiments of the application provide a power device, which includes a heat dissipation base, a refrigeration element and a power chip stacked along a first direction, the refrigeration element includes a heat absorption part and a heat release part distributed along the first direction, the refrigeration element is connected with the power chip through the heat absorption part and connected with the heat dissipation base through the heat release part; wherein the power device further includes a heat conduction structure, the heat conduction structure is arranged on at least one side of the refrigeration element in the first direction, the heat conduction structure presents a first form under a first temperature condition and presents a second form under a second temperature condition, the first temperature condition is higher than the second temperature condition, and the flowability of the first form is greater than that of the second form.

[0006] In some optional embodiments, the heat conduction structure includes a first heat conduction layer and a second heat conduction layer, the first heat conduction layer is arranged between the heat absorption part of the refrigeration element and the power chip, and the second heat conduction layer is arranged between the heat release part of the refrigeration element and the heat dissipation base.

[0007] In some optional embodiments, the first heat conduction layer includes at least one of copper, solder and heat-conducting glue, the orthographic projection of the first heat conduction layer on the heat dissipation base falls within the orthographic projection range of the refrigeration element on the heat dissipation base, at least one of the heat absorption part of the refrigeration element and the power chip is formed with a first recess, and part of the first heat conduction layer is located in the first recess.

[0008] In some optional embodiments, the orthographic projection of the power chip on the heat dissipation base falls within the orthographic projection range of the first heat conduction layer on the heat dissipation base.

[0009] In some optional embodiments, the second heat-conductive layer comprises at least one of copper, solder and heat-conductive glue, a normal projection of the second heat-conductive layer on a vertical plane of the first direction falls within a normal projection range of the heat-dissipating base on the vertical plane of the first direction, at least one of the heat-dissipating part of the refrigeration component and the heat-dissipating base is formed with a second recess, and part of the second heat-conductive layer is located in the second recess.

[0010] In some optional embodiments, a normal projection of the second heat-conductive layer on the heat-dissipating base falls within a normal projection range of the refrigeration component on the heat-dissipating base.

[0011] In some optional embodiments, the refrigeration component comprises a heat-absorbing substrate, a heat-dissipating substrate and a plurality of thermoelectric couples located between the heat-absorbing substrate and the heat-dissipating substrate, the plurality of thermoelectric couples are arranged in series, and each thermoelectric couple comprises a P-type semiconductor and an N-type semiconductor arranged along a current direction.

[0012] In some optional embodiments, the refrigeration component further comprises a first interconnection part arranged on the heat-dissipating substrate and a second interconnection part arranged on the heat-absorbing substrate, the first interconnection part is used for connecting the P-type semiconductor and the N-type semiconductor in the same thermoelectric couple, and the second interconnection part is used for connecting the thermoelectric couples in series.

[0013] In some optional embodiments, the heat-dissipating base comprises a base and a plurality of heat-dissipating fins, each heat-dissipating fin is arranged on a side of the base away from the power chip, and any two heat-dissipating fins are arranged in parallel to each other.

[0014] In some optional embodiments, the power device further comprises a shell made of insulating material, and the shell is used for accommodating the heat-dissipating base, the refrigeration component and the power chip.

[0015] The power device provided by the embodiments of the present application establishes a one-way heat-dissipating path by arranging the refrigeration component between the power chip and the heat-dissipating base, and the power device can start heat dissipation in response to the increase of the temperature of the power chip to avoid the accumulation of a large amount of heat, thereby improving the reliability of the power chip. Specifically, the power device further arranges a heat-conductive structure on at least one side of the refrigeration component in the stacking direction, the heat-conductive structure can present a first form with strong fluidity and a second form with weak fluidity under different temperature conditions, the contact area between the heat-conductive structure and the refrigeration component can be increased by heating the heat-conductive structure to the first form, so as to further optimize the heat-dissipating effect of the power device, and the heat-conductive structure presents the second form when the power chip is normally working, so as to realize the bonding and fixing of the refrigeration component and the power chip or the refrigeration component and the heat-dissipating base. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly introduced as follows, and other drawings can also be obtained by those of ordinary skill in the art without any creative labor on the premise that the drawings are not attached.

[0017] Figure 1 Structure diagram of a power device according to some embodiments of the present application;

[0018] Figure 2 Structure diagram of a power device according to some embodiments of the present application; Figure 1 Structure diagram of a second heat-conducting layer in the power device shown in FIG. 1;

[0019] Figure 3 Structure diagram of a power device according to some embodiments of the present application; Figure 1 Structure diagram of a cooling component in the power device shown in FIG. 1;

[0020] Figure 4 Structure diagram of a power device according to some embodiments of the present application.

[0021] The accompanying drawings are not necessarily drawn to scale.

[0022] Specific mark information in the accompanying drawings is as follows:

[0023] 10, power chip; 11, bonding wire; 12, pin;

[0024] 20, cooling component; 21, heat-absorbing substrate; 211, second interconnection part; 221, P-type semiconductor; 222, N-type semiconductor; 23, heat-dissipating substrate; 231, first interconnection part; 24, protection structure;

[0025] 30, heat-dissipating base; 31, second recess;

[0026] 40, shell;

[0027] 51, first heat-conducting layer; 52, second heat-conducting layer;

[0028] First direction Z. DETAILED DESCRIPTION

[0029] The embodiments of the technical solutions of the present application will be described in detail below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs; the terms used herein are only for the purpose of describing specific embodiments of the present application, and are not intended to limit the present application; the terms "include" and "have" and any variations thereof in the specification and claims of the present application and the above description of drawings are intended to cover non-exclusive inclusion.

[0031] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise explicitly specified and limited.

[0032] Reference herein to "embodiments" means that the particular features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily a separate or alternative embodiment to other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0033] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " herein generally represents an "or" relationship between the front and rear associated objects.

[0034] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two), and similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0035] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the embodiments of the present application.

[0036] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0037] As a core component of modern power electronic systems, power devices bear the functions of control and power conversion. Power devices are packaged by chips and heat dissipation structures, and the chips internally integrate several transistors to realize the control function. In recent years, with the continuous development of power electronic technology, the application scenarios of power devices tend to be high frequency and high voltage, and are accompanied by the development trend of miniaturization and integration, the number of transistors inside the chip increases exponentially, and the heat dissipation of power devices faces severe challenges.

[0038] In the related art, the power device internally integrates a heat dissipation component such as a forced air cooling structure or a water cooling structure, and introduces low-temperature airflow or cooling liquid heat exchange into the power device to realize the heat dissipation of the chip. However, this passive heat dissipation form is difficult to meet the rapidly rising heat flux density of the chip, and the heat dissipation medium continues to heat up during the heat dissipation process, and the heat dissipation effect is limited. The heat in the power device cannot be discharged in time, which may cause the cracking of the solder joint, the falling off of the bonding wire, and even the ablation of the transistor, affecting the normal use of the electronic device.

[0039] To solve the problems in the prior art, the embodiments of the present application provide a power device which can accelerate the heat dissipation of the chip by optimizing the heat dissipation path of the power device, and improve the reliability and performance of the power device.

[0040] Please refer to Figure 1 The embodiments of the present application provide a power device, which includes a heat dissipation base 30, a refrigeration piece 20 and a power chip 10 stacked along a first direction, the refrigeration piece 20 includes a heat absorption part and a heat release part distributed along the first direction, the refrigeration piece 20 is connected with the power chip 10 through the heat absorption part and connected with the heat dissipation base 30 through the heat release part; wherein the power device further includes a heat conduction structure, the heat conduction structure is arranged on at least one side of the refrigeration piece 20 in the first direction, the heat conduction structure presents a first form under a first temperature condition and presents a second form under a second temperature condition, the first temperature condition is higher than the second temperature condition, and the flowability of the first form is greater than that of the second form.

[0041] Specifically, the first direction Z refers to the thickness direction of the power chip 10.

[0042] Optionally, under the first temperature condition, the heat conduction structure is in a liquid state, or the heat conduction structure is in a gel state.

[0043] Optionally, under the second temperature condition, the heat conduction structure is in a solid state, and the heat conduction structure can be used to fix the refrigeration piece 20 and the power chip 10 or the refrigeration piece 20 and the heat dissipation base 30.

[0044] It can be understood that the specific values of the first temperature condition and the second temperature condition change according to the material difference of the heat conduction structure. For example, the heat conduction structure is made of heat conduction glue, the first temperature condition is greater than or equal to the melting point temperature of the heat conduction glue, and the second temperature condition is less than or equal to the freezing point temperature of the heat conduction glue.

[0045] Specifically, in the power device processing process, the refrigeration piece 20 or the power chip 10 is covered above the heat-conducting structure after the heat-conducting structure is coated under the first temperature condition, and the heat-conducting structure is solidified and shaped after being cooled to the second temperature condition.

[0046] Optionally, the power device further comprises a power supply module connected with the refrigeration piece 20, so as to drive the refrigeration piece 20 to work to realize the one-way transfer of heat from the power chip 10 to the heat-dissipating base 30.

[0047] Therefore, the power device establishes a one-way heat-dissipating path by arranging the refrigeration piece 20 between the power chip 10 and the heat-dissipating base 30, and the power device can start heat dissipation in response to the temperature rise of the power chip 10 to avoid the accumulation of a large amount of heat, thereby improving the reliability of the power chip 10. Specifically, the power device further arranges the heat-conducting structure on at least one side of the refrigeration piece 20 in the stacking direction, and the heat-conducting structure can present a first form with strong fluidity and a second form with weak fluidity under different temperature conditions. By heating the heat-conducting structure to the first form, the contact area between the heat-conducting structure and the refrigeration piece 20 can be increased to further optimize the heat-dissipating effect of the power device. In addition, the heat-conducting structure presents the second form when the power chip 10 normally works, so as to realize the bonding and fixing of the refrigeration piece 20 and the power chip 10 or the refrigeration piece 20 and the heat-dissipating base 30.

[0048] It can be understood that the power device provided by the embodiments of the present application can be used in electronic devices, power devices or power electronic systems, and the present application does not limit this.

[0049] According to some embodiments of the present application, the heat-conducting structure comprises a first heat-conducting layer 51 and a second heat-conducting layer 52, the first heat-conducting layer 51 is arranged between the heat-absorbing part of the refrigeration piece 20 and the power chip 10, and the second heat-conducting layer 52 is arranged between the heat-emitting part of the refrigeration piece 20 and the heat-dissipating base 30.

[0050] Optionally, the materials of the first heat-conducting layer 51 and the second heat-conducting layer 52 are consistent, so that the first heat-conducting layer 51 and the second heat-conducting layer 52 have the same form under the condition that the temperature conditions in the power device are the same.

[0051] Optionally, the materials of the first heat-conducting layer 51 and the second heat-conducting layer 52 are different.

[0052] Therefore, the two sides of the refrigeration piece 20 along the thickness direction are covered by the first heat-conducting layer 51 and the second heat-conducting layer 52 respectively, so as to accelerate the process of heat flowing from the power chip 10 to the refrigeration piece 20 and then to the heat-dissipating base 30 for release, and optimize the high-temperature resistance performance of the power device.

[0053] According to some embodiments of this application, the first thermally conductive layer 51 includes at least one of copper, solder and thermally conductive adhesive, and at least one of the heat-absorbing portion of the cooling component 20 and the power chip 10 is formed with a first recess, and a portion of the first thermally conductive layer 51 is located in the first recess.

[0054] Optionally, the orthographic projection of the first heat-conducting layer 51 on the heat dissipation base 30 falls within the orthographic projection range of the cooling component 20 on the heat dissipation base 30, and the entire bottom surface of the first heat-conducting layer 51 can contact the cooling component 20 so that the cooling component 20 provides a uniform and reliable support effect for the solidified first heat-conducting layer 51.

[0055] Alternatively, the orthographic projection of the first thermally conductive layer 51 onto the heat dissipation base 30 is consistent with the orthographic projection range of the cooling component 20 onto the heat dissipation base 30.

[0056] Alternatively, the orthographic projection of the first heat-conducting layer 51 on the heat dissipation base 30 is smaller than the orthographic projection of the cooling component 20 on the heat dissipation base 30, so as to avoid the first heat-conducting layer 51 overflowing into the cooling component 20 in the molten state, causing defects such as short circuits and affecting the normal operation of the cooling component 20.

[0057] It is understood that the first thermally conductive layer 51 may also include other materials with good thermal conductivity, such as hot melt adhesive.

[0058] Therefore, the first thermally conductive layer 51 is in a molten state, and in this molten state, it can flow into the first recess. By increasing the contact area between the first thermally conductive layer 51 and the cooling component 20 or the power chip 10, the thermal conductivity is improved, accelerating the heat transfer from the power chip 10 to the heat-absorbing part of the cooling component 20. Furthermore, the adhesion between the first thermally conductive layer 51 and the cooling component 20 or the power chip 10 is better after solidification.

[0059] According to some embodiments of this application, the orthographic projection of the power chip 10 on the heat sink 30 falls within the orthographic projection range of the first thermally conductive layer 51 on the heat sink 30.

[0060] Optionally, the orthographic projection of the power chip 10 on the heat sink 30 is consistent with the orthographic projection range of the first thermal conductive layer 51 on the heat sink 30.

[0061] Optionally, the orthographic projection of the power chip 10 on the heat dissipation base 30 is smaller than the orthographic projection of the first heat-conducting layer 51 on the heat dissipation base 30, so as to reduce the precision requirements for assembling the power chip 10 to the first heat-conducting layer 51 and improve the assembly efficiency.

[0062] As a result, the entire bottom surface of the power chip 10 is in contact with the first heat-conducting layer 51 to accelerate the release of heat from the power chip 10 to the first heat-conducting layer 51 and the heat-absorbing part of the cooling component 20.

[0063] According to some embodiments of this application, the second thermally conductive layer 52 includes at least one of copper, solder and thermally conductive adhesive, and at least one of the heat-dissipating portion of the cooling component 20 and the heat dissipation base 30 is formed with a second recess 31, and a portion of the second thermally conductive layer 52 is located in the second recess 31.

[0064] For example, please refer to Figure 2 The heat dissipation base 30 has a second recess 31 formed on the surface facing the cooling component 20.

[0065] Optionally, the orthographic projection of the second heat-conducting layer 52 on the vertical plane of the first direction falls within the orthographic projection range of the heat dissipation base 30 on the vertical plane of the first direction, so that the entire bottom surface of the second heat-conducting layer 52 can contact the heat dissipation base 30, and the heat dissipation base 30 can provide a uniform and reliable support effect for the solidified second heat-conducting layer 52.

[0066] Alternatively, the orthographic projection of the second heat-conducting layer 52 onto the vertical plane in the first direction is consistent with the orthographic projection range of the heat dissipation base 30 onto the vertical plane in the first direction.

[0067] Further optionally, the orthographic projection of the second heat-conducting layer 52 on the vertical plane of the first direction is smaller than the orthographic projection of the heat dissipation base 30 on the vertical plane of the first direction, so as to avoid the second heat-conducting layer 52 overflowing in the molten state and affecting the normal heat dissipation of the heat dissipation base 30.

[0068] Understandably, the second thermally conductive layer 52 may also include other materials with good thermal conductivity, such as hot melt adhesive.

[0069] Therefore, the second heat-conducting layer 52 is in a molten state and can flow into the second recess 31 in the molten state, increasing the contact area between the second heat-conducting layer 52 and the cooling component 20 or the heat dissipation base 30 to improve the heat conduction effect and accelerate the heat transfer from the cooling component 20 to the heat dissipation base 30. Furthermore, the adhesion and fixation effect between the second heat-conducting layer 52 and the cooling component 20 or the heat dissipation base 30 after solidification is better.

[0070] According to some embodiments of this application, the orthographic projection of the second thermally conductive layer 52 on the heat dissipation base 30 falls within the orthographic projection range of the cooling component 20 on the heat dissipation base 30.

[0071] This prevents the second heat-conducting layer 52 from overflowing into the interior of the cooling component 20 in a molten state, thus affecting the normal operation of the cooling component 20.

[0072] According to some other embodiments of this application, the orthogonal projection of the cooling component 20 onto the heat dissipation base 30 of the second heat-conducting layer 52 is within the orthogonal projection range of the heat dissipation base 30.

[0073] Please see Figure 3According to some embodiments of this application, the cooling component 20 includes a heat-absorbing substrate 21, a heat-releasing substrate 23, and a plurality of thermocouples located between the heat-absorbing substrate 21 and the heat-releasing substrate 23. The plurality of thermocouples are connected in series, and each thermocouple includes a P-type semiconductor and an N-type semiconductor arranged along the current direction.

[0074] Optionally, the P-type semiconductor is selected from P-type ion-doped bismuth telluride.

[0075] Optionally, the N-type semiconductor is selected from N-type ion-doped bismuth telluride.

[0076] Optionally, the heat-absorbing substrate 21 comprises at least one of ceramic material, alumina, and aluminum nitride. For example, the heat-absorbing substrate 21 comprises 96% by mass of alumina and 4% by mass of aluminum nitride.

[0077] Alternatively, a metal film may be attached to the side of the heat-absorbing substrate 21 facing the power chip 10.

[0078] Optionally, the heat-dissipating substrate 23 includes at least one of ceramic material, alumina, and aluminum nitride.

[0079] Alternatively, a metal film may be attached to the side of the heat-dissipating substrate 23 facing the heat dissipation base 30.

[0080] Optionally, the cooling component 20 further includes a protective structure 24, at least part of which is sandwiched between the heat-absorbing substrate 21 and the heat-releasing substrate 23 and surrounds the outside of multiple thermocouples. The protective structure 24 is used to prevent moisture or impurities from entering the interior of the cooling component 20 and to ensure the normal operation of the cooling component 20.

[0081] Thus, the cooling component 20 and the power supply module form an electrical circuit. When current flows through the alternating P-type and N-type semiconductors in the thermocouple, energy transfer occurs, thereby forming a heat-absorbing part that can cool and a heat-releasing part that releases heat, thus constructing a unidirectional heat dissipation channel.

[0082] According to some embodiments of this application, the cooling component 20 further includes a first interconnection portion 231 disposed on the heat-dissipating substrate 23 and a second interconnection portion 211 disposed on the heat-absorbing substrate 21. The first interconnection portion 231 is used to connect the P-type semiconductor and the N-type semiconductor in the same thermocouple, and the second interconnection portion 211 is used to connect each thermocouple in series.

[0083] Thus, each thermocouple is electrically connected in series and thermally connected in parallel through the first interconnection part 231 and the second interconnection part, thereby improving the cooling and heat dissipation efficiency of the cooling component 20.

[0084] According to some embodiments of this application, the heat dissipation base 30 includes a base and a plurality of heat dissipation fins, each heat dissipation fin being disposed on the side of the base away from the power chip 10 and any two heat dissipation fins being disposed parallel to each other.

[0085] Optionally, the heat sink 30 also includes a fan, with the fan's intake side connected to a heat flow channel formed between adjacent heat sink fins, or the fan's exhaust side connected to a heat flow channel formed between adjacent heat sink fins.

[0086] Therefore, the heat dissipation fins can increase the heat exchange area of ​​the heat dissipation base 30 to accelerate the heat release of the heat dissipation base 30 and reduce the probability of heat accumulation in the power device.

[0087] According to some embodiments of this application, the power device also includes a housing 40, which is made of insulating material and is used to house the heat dissipation base 30, the cooling component 20, and the power chip 10.

[0088] The housing 40 is used to encapsulate and protect the power chip 10, the cooling component 20 and the heat sink 30. On the one hand, it reduces the intrusion of impurities and dust and extends the service life of the power device; on the other hand, it prevents the power chip 10 from short-circuiting with other electrical components in the electronic device and ensures electrical safety.

[0089] Please see Figure 4 It is understood that the power device also includes pins 12 and bonding wires 11 for electrical connection of the power chip 10. Optionally, the pins 12 pass through the housing 40 to achieve electrical interconnection of the power chip 10 with other electrical components.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A power device, characterized in that, The device includes a heat dissipation base, a cooling component, and a power chip stacked along a first direction. The cooling component includes a heat-absorbing part and a heat-releasing part distributed along the first direction. The cooling component is connected to the power chip through the heat-absorbing part and to the heat dissipation base through the heat-releasing part. The power device further includes a heat-conducting structure, which is disposed on at least one side of the cooling component in the first direction. The heat-conducting structure exhibits a first shape under a first temperature condition and a second shape under a second temperature condition. The first temperature condition is higher than the second temperature condition, and the fluidity of the first shape is greater than that of the second shape.

2. The power device according to claim 1, characterized in that, The thermally conductive structure includes a first thermally conductive layer and a second thermally conductive layer. The first thermally conductive layer is disposed between the heat-absorbing part of the cooling component and the power chip, and the second thermally conductive layer is disposed between the heat-dissipating part of the cooling component and the heat dissipation base.

3. The power device according to claim 2, characterized in that, The first thermally conductive layer includes at least one of copper, solder and thermally conductive adhesive. The orthographic projection of the first thermally conductive layer on the heat dissipation base falls within the orthographic projection range of the cooling component on the heat dissipation base. At least one of the heat-absorbing portion of the cooling component and the power chip forms a first recess, and a portion of the first thermally conductive layer is located within the first recess.

4. The power device according to claim 3, characterized in that, The orthographic projection of the power chip on the heat sink base falls within the orthographic projection range of the first thermally conductive layer on the heat sink base.

5. The power device according to claim 2, characterized in that, The second thermally conductive layer includes at least one of copper, solder and thermally conductive adhesive. The orthographic projection of the second thermally conductive layer on the vertical plane of the first direction falls within the orthographic projection range of the heat dissipation base on the vertical plane of the first direction. The heat-dissipating part of the cooling component and at least one of the heat dissipation base form a second recess, and a portion of the second thermally conductive layer is located in the second recess.

6. The power device according to claim 5, characterized in that, The orthographic projection of the second thermally conductive layer on the heat dissipation base falls within the orthographic projection range of the cooling component on the heat dissipation base.

7. The power device according to claim 1, characterized in that, The cooling component includes a heat-absorbing substrate, a heat-releasing substrate, and a plurality of thermocouples located between the heat-absorbing substrate and the heat-releasing substrate. The plurality of thermocouples are connected in series, and each thermocouple includes a P-type semiconductor and an N-type semiconductor arranged along the current direction.

8. The power device according to claim 7, characterized in that, The cooling component further includes a first interconnect portion disposed on the heat-dissipating substrate and a second interconnect portion disposed on the heat-absorbing substrate. The first interconnect portion is used to connect the P-type semiconductor and the N-type semiconductor in the same thermocouple, and the second interconnect portion is used to connect each of the thermocouples in series.

9. The power device according to claim 1, characterized in that, The heat dissipation base includes a base and a plurality of heat dissipation fins. Each heat dissipation fin is disposed on the side of the base away from the power chip, and any two heat dissipation fins are arranged parallel to each other.

10. The power device according to claim 1, characterized in that, The power device also includes a housing made of insulating material, which is used to house the heat sink, the cooling component, and the power chip.

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